TC429MJA

1 TC429 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER FEATURES s s s s s High Peak Output Current .................................. 6A Wide Operating Range ............................. 7V to 18V High-Impedance CMOS Logic Input Logic Input Threshold Independent of Supply Voltage Low Supply Current — With Logic 1 Input ................................ 5mA Max — With Logic 0 Input ............................. 0.5mA Max Output Voltage Swing Within 25 mV of Ground or VDD Short Delay Time .................................. 75nsec Max High Capacitive Load Drive Capability — tRISE, tFALL = 35nsec Max With CLOAD = 2500pF GENERAL DESCRIPTION The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5Ω output impedance and 6A peak output current drive. A 2500pF capacitive load will be driven 18V in 25nsec. Delay time through the device is 60nsec. The rapid switching times with large capacitive loads minimize MOSFET transition power loss. A TTL/CMOS input logic level is translated into an output voltage swing that equals the supply and will swing to within 25mV of ground or VDD. Input voltage swing may equal the supply. Logic input current is under 10µA, making direct interface to CMOS/bipolar switch-mode power supply controllers easy. Input "speed-up" capacitors are not required. The CMOS design minimizes quiescent power supply current. With a logic 1 input, power supply current is 5mA maximum and decreases to 0.5mA for logic 0 inputs. For dual devices, see the TC426/TC427/TC428 data sheet. For noninverting applications, or applications requiring latch-up protection, see the TC4420/TC4429 data sheet. 2 3 4 5 6 7 s s s APPLICATIONS s s s s Switch-Mode Power Supplies CCD Drivers Pulse Transformer Drive Class D Switching Amplifiers PIN CONFIGURATION VDD INPUT NC GND 1 2 3 4 TC429 8 7 6 5 VDD OUTPUT OUTPUT GND ORDERING INFORMATION Part No. TC429CPA TC429EPA TC429MJA Package 8-Pin Plastic DIP 8-Pin Plastic DIP 8-Pin CerDIP Temperature Range 0°C to +70°C – 40°C to +85°C – 55°C to +125°C NC = NO INTERNAL CONNECTION NOTE: Duplicate pins must both be connected for proper operation. TYPICAL APPLICATION 1,8 VDD 300mV 6,7 OUTPUT INPUT 2 TC429 4,5 EFFECTIVE INPUT C = 38pF TC429-4 10/11/96 GND 8 4-175 TELCOM SEMICONDUCTOR, INC. 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER TC429 ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +20V Input Voltage, Any Terminal ..... VDD +0.3V to GND – 0.3V Power Dissipation (TA ≤ 70°C) Plastic DIP ......................................................730mW CerDIP ............................................................800mW Derating Factors Plastic DIP ............................ 5.6 mW/°C Above 36°C CerDIP ...................................................... 6.4 mW/°C Operating Temperature Range C Version ............................................... 0°C to +70°C I Version ........................................... – 25°C to +85°C E Version .......................................... – 40°C to +85°C M Version ....................................... – 55°C to +125°C Maximum Chip Temperature ................................. +150°C Storage Temperature Range ................ – 65°C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300°C *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: Symbol Input VIH VIL IIN Logic 1, High Input Voltage Logic 0, Low Input Voltage Input Current High Output Voltage Low Output Voltage Output Resistance TA = +25°C with 7V ≤ VDD ≤ 18V, unless otherwise specified. Test Conditions Min 2.4 — – 10 VDD – 0.025 — — — — — — — — — — Parameter Typ 1.8 1.3 — — — 1.8 1.5 6 23 25 53 60 3.5 0.3 Max — 0.8 10 — 0.025 2.5 2.5 — 35 35 75 75 5 0.5 Unit V V µA V V Ω 0V ≤ VIN ≤ VDD Output VOH VOL RO IPK tR tF tD1 tD2 Peak Output Current Rise Time Fall Time Delay Time Delay Time Power Supply Current VIN = 0.8V, IOUT = 10mA, VDD = 18V VIN = 2.4V, IOUT = 10mA, VDD = 18V VDD = 18V (See Figure 3) Figure 1, CL = 2500pF Figure 1, CL = 2500pF Figure 1 Figure 1 VIN = 3V VIN = 0V A nsec nsec nsec nsec mA Switching Time (Note 1) Power Supply IS NOTES: 1. Switching times guaranteed by design. 4-176 TELCOM SEMICONDUCTOR, INC. 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER TC429 ELECTRICAL CHARACTERISTICS: Over operating temperature with 7V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Input VIH VIL IIN Logic 1, High Input Voltage Logic 0, Low Input Voltage Input Current High Output Voltage Low Output Voltage Output Resistance 2.4 — – 10 VDD – 0.025 — — — — — — — — — — — 0.8 10 — 0.025 5 5 V V µA V V Ω 1 Parameter Test Conditions Min Typ Max Unit 2 3 4 5 6 7 0V ≤ VIN ≤ VDD Output VOH VOL RO VIN = 0.8V, IOUT = 10 mA, VDD = 18V VIN = 2.4V, IOUT = 10 mA, VDD = 18V Figure 1, CL = 2500pF Figure 1, CL = 2500pF Figure 1 Figure 1 VIN = 3V VIN = 0V Switching Time (Note 1) tR tF tD1 tD2 Rise Time Fall Time Delay Time Delay Time Power Supply Current 1. Switching times guaranteed by design. — — — — — — — — — — — — 70 70 100 120 12 1 nsec nsec nsec nsec mA Power Supply IS NOTE: SWITCHING SPEED VDD = 18V 1 µF 1 8 0.1 µF INPUT 2 6 7 OUTPUT CL= 2500 pF TC429 4 5 INPUT: 100 kHz, square wave tRISE = tFALL ≤ 10 nsec +5V INPUT 0V 18V OUTPUT 0V 10% 10% tD1 90% tF 90% tD2 tR 90% 10% Figure 1. Inverting Driver Switching Time Test Circuit 8 4-177 TELCOM SEMICONDUCTOR, INC. 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER TC429 SUPPLY BYPASSING Charging and discharging large capacitive loads quickly requires large currents. For example, charging a 2500 pF load 18V in 25nsec requires a 1.8A current from the device's power supply. To guarantee low supply impedance over a wide frequency range, a parallel capacitor combination is recommended for supply bypassing. Low-inductance ceramic disk capacitors with short lead lengths (2 MHz 2 3 4 CONDITIONS: 1. CerDIP Package (θJA = 150°C/W) 2. TA = +25°C 3. C L = 2500 pF Thermal Derating Curves 1600 1400 8 Pin DIP 8 Pin CerDIP 1000 800 8 Pin SOIC 600 400 200 0 0 10 20 30 40 50 60 70 80 90 100 110 120 MAX. POWER (mV) 1200 AMBIENT TEMPERATURE (°C) Peak Output Current Capability 5 6 POWER-ON OSCILLATION It is extremely important that all MOSFET DRIVER applications be evaluated for the possibility of having HIGH-POWER OSCILLATIONS occurring during the POWER-ON cycle. POWER-ON OSCILLATIONS are due to trace size and layout as well as component placement. A ‘quick fix’ for most applications which exhibit POWER-ON OSCILLATION problems is to place approximately 10 kΩ in series with the input of the MOSFET driver. 4-179 7 8 TELCOM SEMICONDUCTOR, INC. 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER TC429 TYPICAL CHARACTERISTICS Rise/Fall Times vs. Supply Voltage 60 TA = +25°C CL = 2500pF Rise/Fall Times vs. Temperature 60 CL = 2500pF VDD = +15V Rise/Fall Times vs. Capacitive Load 100 TA = +25°C VDD = +15V TIME (nsec) 50 TIME (nsec) 50 TIME (nsec) tF tR 40 40 tF 10 30 tF tR 30 tR 20 20 10 5 10 15 SUPPLY VOLTAGE (V) 20 10 –50 –25 0 25 50 75 100 125 150 TEMPERATURE (°C) 1 100 1K CAPACITIVE LOAD (pF) 10K Supply Current vs. Capacitive Load 70 60 50 40 30 20 Delay Times vs. Temperature 90 Delay Times vs. Supply Voltage 140 TA = +25°C CL = 2500pF SUPPLY CURRENT (mA) TA = +25°C VDD = +15V DELAY TIME (nsec) 70 tD2 DELAY TIME (nsec) 80 CL = 2500pF VDD = +15V 120 100 400kHz 200kHz 60 80 tD2 50 tD1 60 tD1 10 0 10 20kHz 100 1K CAPACITIVE LOAD (pF) 10K 40 –50 –25 0 25 50 75 100 125 150 TEMPERATURE (°C) 40 5 10 15 SUPPLY VOLTAGE (V) 20 Supply Current vs. Frequency 50 TA = +25°C CL = 2500 pF Supply Current vs. Supply Voltage 4 SUPPLY CURRENT (mA) Supply Current vs. Temperature 4 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 40 15V 30 VDD = 18V 10V TA = +25°C RL = ∞ INPUT LOGIC "1" VDD = +18°C RL = ∞ INPUT LOGIC "1" 2 20 3 10 5V 0 1 10 100 FREQUENCY (kHz) 1K 0 4 8 12 16 SUPPLY VOLTAGE (V) 20 2 –75 –50 –25 0 25 50 75 100 125 150 TEMPERATURE (°C) Voltage Transfer Characteristics 20 TA = +25°C HYSTERESIS 310mV 15 High Output Voltage vs. Current 400 TA = +25°C Low Output Voltage vs. Current 400 TA = +25°C OUTPUT VOLTAGE (mV) OUTPUT VOLTAGE (V) 300 VDD = 5V 200 OUTPUT VOLTAGE (mV) 300 VDD = 5V 200 10V 100 18V 15V 300mV 10 200mV 5 10V 15V 100 18V 0 0.25 0.50 0.75 1 1.25 1.50 1.75 2 INPUT VOLTAGE (V) 0 20 40 60 80 CURRENT SOURCED (mA) 100 0 20 40 60 80 CURRENT SUNK (mA) 100 4-180 TELCOM SEMICONDUCTOR, INC. 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER TC429 +18V 1 1µF 18V 2.4V 0V 0.1µF 2 4 1 8 6,7 5 TEK CURRENT PROBE 6302 0V 0.1µF 2500pF 2 3 4 5 6 7 TC429 Figure 3. Peak Output Current Test Circuit 8 TELCOM SEMICONDUCTOR, INC. 4-181