TC4626EPA

1 TC4626 TC4627 POWER CMOS DRIVERS WITH VOLTAGE TRIPLER FEATURES s s s s s s Power driver with on Board Voltage Booster Low IDD ......................................................... < 4 mA Small Package ........................................ 8-Pin PDIP Under-Voltage Circuitry Fast Rise-Fall Time .................. < 40nsec @ 1000pF Below-Rail Input Protection GENERAL DESCRIPTION The TC4626/4627 are single CMOS high speed drivers with an on-board voltage boost circuit. These parts work with an input supply voltage from 4 to 6 volts. The internal voltage booster will produce a VBOOST potential up to 12 volts above VIN. This VBOOST is not regulated, so its voltage is dependent on the input VDD voltage and output drive loading requirements. An internal undervoltage lockout circuit keeps the output in a low state when VBOOST drops below 7.8 volts. Output is enabled when VBOOST is above 11.3 volts. 2 3 4 5 6 7 APPLICATIONS s s Raises 5V to drive higher-Vgs (ON) MOSFETs Eliminates one system power supply ORDERING INFORMATION PIN CONFIGURATIONS 8-Pin Plastic DIP /CerDIP C1– 1 C1+ 2 C2 3 GND 4 TC4626 TC4627 8 VDD 7 IN 6 VBOOST 5 OUT Part No. Package 16-Pin SOIC (Wide) 8-Pin Plastic DIP 16-Pin SOIC (Wide) 8-Pin Plastic DIP 8-Pin CerDIP 16-Pin SOIC (Wide) 8-Pin Plastic DIP 16-Pin SOIC (Wide) 8-Pin Plastic DIP 8-Pin CerDIP Temp. Range – 55°C to +125°C – 40°C to +85°C – 40°C to +85°C – 0°C to +70°C – 0°C to +70°C – 55°C to +125°C – 40°C to +85°C – 40°C to +85°C – 0°C to +70°C – 0°C to +70°C 16-Pin SOIC (Wide) C1– NC C1+ NC C2 NC 1 2 3 4 5 6 TC4626 TC4627 16 VDD 15 NC 14 NC 13 IN 12 NC 11 VBOOST 10 NC 9 OUT TC4626COE TC4626CPA TC4626EOE TC4626EPA TC4626MJA TC4627COE TC4627CPA TC4627EOE TC4627EPA TC4627MJA NC 7 GND 8 FUNCTIONAL BLOCK DIAGRAM EXT + C1 C1+ C1C2 2 1 3 V = 2 x VDD VOLTAGE BOOSTER NONINVERTING 4627 5 VDD 8 CLOCK OUTPUT VBOOST (UNREGULATED 3 x VDD) 6 EXT + C3 UV LOCK EXT + C2 IN GND 7 INVERTING 4626 4 NOTE: Pin numbers correspond to 8-pin package TC4626/7-7 10/21/96 8 4-271 TELCOM SEMICONDUCTOR, INC. POWER CMOS DRIVERS WITH VOLTAGE TRIPLER TC4626 TC4627 ABSOLUTE MAXIMUM RATINGS Package Power Dissipation (TA ≤ 70°C) PDIP .................................................................730mW CerDIP .............................................................. 800mW SOIC .................................................................760mW Derating Factor PDIP ....................................... 5.6 mW/°C Above 36°C CerDIP ........................................................ 6.0 mW/°C Supply Voltage ...........................................................6.2V Input Voltage, Any Terminal ...... VS + 0.3V to GND – 0.3V Operating Temperature : M Version ...... – 55°C to +125°C E Version ......... – 40°C to +85°C C Version .............. 0°C to +70°C Maximum Chip Temperature ................................. +150°C Storage Temperature ............................ – 65°C to +150°C Lead Temperature (10 sec) ................................... +300°C ELECTRICAL CHARACTERISTICS: TA = 25°C VDD = 5V C1 = C2 = C3 10µF unless otherwise specified. Symbol Driver Input VIH VIL IIN Logic 1, Input Voltage Logic 0, Input Voltage Input Current High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Rise Time Fall Time Delay Time Delay Time Maximum Switching Frequency 2.4 — –1 VBOOST – 0.025 — — — — — — — — 1.0 — — — — — 10 8 1.5 33 27 35 45 — — 0.8 1 — 0.025 15 10 — 40 35 45 55 — V V µA V V Ω Ω A nsec nsec nsec nsec MHz Parameter Test Conditions Min Typ Max Unit 0V ≤ VIN ≤ VDRIVE Driver Output VOH VOL RO RO IPK tR tF tD1 tD2 FMAX IOUT = 10 mA, VDD = 5V IOUT = 10 mA, VDD = 5V Switching Time Test Figure 1,2 Test Figure 1,2 Test Figure 1,2 Test Figure 1,2 Test Figure 1 VDD = 5V, VBOOST > 8.5V IL = 10 mA, VDD = 5V Voltage Booster R3 R2 FOSC VOSC UV @ VBOOST VSTART @ VBOOST VBOOST Voltage Tripler Output Source Resistance Voltage Doubler Output Source Resistance Oscillator Frequency Oscillator Amplitude Measured at C1Undervoltage Threshold Start Up Voltage @VDD = 5V Power Supply Current Supply Voltage No Load VIN = LOW or HIGH — — 12 4.5 7.0 10.5 14.6 — 4.0 300 120 — — 7.8 11.3 — — — 400 200 28 10 8.5 12 — 2.5 6.0 Ω Ω kHz V V V V mA V RLOAD = 10kΩ Power Supply IDD VDD 4-272 TELCOM SEMICONDUCTOR, INC. POWER CMOS DRIVERS WITH VOLTAGE TRIPLER TC4626 TC4627 ELECTRICAL CHARACTERISTICS: TA = Over Operating Temperature Range VDD = 5V C1 = C2 = C3 10µF unless otherwise specified. Symbol Driver Input VIH VIL IIN Logic 1, Input Voltage Logic 0, Input Voltage Input Current High Output Voltage Low Output Voltage Output Resistance, High 2.4 — – 10 VDRIVE – 0.025 — IOUT = 10 mA, VDD = 5V C & E Version (TA = 70°C or 85°C) M Version (TA = 125°C) IOUT = 10 mA, VDD = 5V C & E Version (TA = 70°C or 85°C) M Version (TA = 125°C) — — — — — — — — — 750 — — — — — 15 15 10 10 1.5 — — — — — — 0.8 10 — 0.025 20 25 13 15 — 55 50 60 70 — V V µA V V Ω 1 Parameter Test Conditions Min Typ Max Unit 2 3 4 5 6 7 0V ≤ VIN ≤ VBOOST Driver Output VOH VOL RO RO Output Resistance, Low Ω A nsec nsec nsec nsec kHz IPK tR tF tD1 tD2 FMAX Peak Output Current Rise Time Fall Time Delay Time Delay Time Maximum Switching Frequency Test Figure 1,2 Test Figure 1,2 Test Figure 1,2 Test Figure 1,2 Test Figure 1 VDD = 5V, VBOOST > 8.5V IL = 10 mA, VDD = 5V Switching Time Voltage Booster R3 R2 FOSC VOSC UV @ VBOOST VSTART @ VBOOST VBOOST Voltage Boost Output Source Resistance Voltage Doubler Output Source Resistance Oscillator Frequency Oscillator Amplitude Measured at C1Undervoltage Threshold Start Up Voltage @VDD = 5V Power Supply Current Supply Voltage No Load VIN = LOW or HIGH — — 5 4.5 7.0 10.5 14.6 — 4.0 400 170 — — 7.8 11.3 — — — 500 300 50 10 8.5 12 — 4 6.0 Ω Ω kHz V V V V mA V RLOAD = 10kΩ Power Supply IDD VDD 8 TELCOM SEMICONDUCTOR, INC. 4-273 POWER CMOS DRIVERS WITH VOLTAGE TRIPLER TC4626 TC4627 SWITCHING TIME TEST CIRCUITS VBOOST 0.1 µF Ceramic 6 VBOOST C3 6 C3 10 µF 0.1µF Ceramic 10 µF 5 INPUT C1 10 µF 7 2 C1+ C1- OUTPUT CL = 1000 pF INPUT 7 2 C1+ C1- 5 OUTPUT CL = 1000 pF C1 10 µF 1 3 C2 10 µF 1 C2 TC4626 4 8 VDD = 5V 3 C2 10 µF C2 TC4627 4 8 VDD = 5V +5V INPUT* 90% +5V INPUT* 90% 0V VBOOST 10% tD1 90% tF tD2 0V 10% 90% tR 10% tD2 90% tF 10% tR 90% VBOOST tD1 OUTPUT 0V OUTPUT 0V 10% 10% * 100kHz SQUARE WAVE, tr = tf < 10nsec Figure 1. Inverting Driver Switching Time * 100kHz SQUARE WAVE, tr = tf < 10nsec Figure 2. Non-Inverting Driver Switching Time 4-274 TELCOM SEMICONDUCTOR, INC. POWER CMOS DRIVERS WITH VOLTAGE TRIPLER TC4626 TC4627 BOOSTER FUNCTION The voltage booster is an unregulated voltage tripler circuit. The tripler consists of three sets of internal switches and three external capacitors. S1a and S1b charge capacitor C1 to VDD potential. S2a and S2b add C1 potential to VDD input to charge C2 to 2 x VDD. S3a and S3b add C1 potential to C2 to charge C3 to 3 x VDD. The position of the switches is controlled by the internal 4 phase clock. Pin 1 & 2 Waveforms 3 x VDD 1 2 3 4 PIN 2 VOLTAGE 2 x VDD VDD 2 x VDD 6 C3 3 x VDD, VBOOST 6 PIN 1 VOLTAGE VDD 0 S3a 3 C2 2 x VDD S2a S3b (4 To 6V) VDD 8 S1a 2 S2b ON S1 OFF C1 1 S1b GND 4 S2 ON OFF S3 ON OFF 5 Position of Switches Voltage Booster 6 7 8 TELCOM SEMICONDUCTOR, INC. 4-275 POWER CMOS DRIVERS WITH VOLTAGE TRIPLER TC4626 TC4627 TYPICAL CHARACTERISTICS TC4626 VOH vs. Frequency VS = 5V, Temperature = –55°C 14 470pF 12 10 VOUT Hi (Volts) 16 14 VOUT Hi (Volts) TC4626 VOH vs. Frequency VS = 5V, Temperature = 25°C 470pF 12 10 2200pF 8 6 4 2 0 5 500 1,000 1,500 2,000 2,500 3,000 3,500 1000pF 8 6 2200pF 4 2 0 10 500 1,000 1,500 2,000 2,500 3,000 3,500 1000pF FREQUENCY (kHz) FREQUENCY (kHz) 14 12 TC4626 VOH vs. Frequency VS = 5V, Temperature = 125°C 100 Delay Time vs. Temperature VS = 4V, CLOAD = 1000pF Input = 0-5V; TR & TF