BPW14N

BPW14N Silicon NPN Phototransistor Description BPW14N is a high speed silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its glass lens, featuring a viewing angle of ±12° makes it insensible to ambient straylight. A base terminal is available to enable biasing and sensitivity control. Features D D D D D D D D D Hermetically sealed case Lens window Narrow viewing angle ϕ = ± 10° Exact central chip alignment Base terminal available High photo sensitivity Fast response times Suitable for visible and near infrared radiation Selected into sensitivity groups 94 8486 Applications Detector in electronic control and drive circuits Absolute Maximum Ratings Tamb = 25_C Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Thermal Resistance Junction/Case Test Conditions Symbol VCBO VCEO VEBO IC ICM Ptot Tj Tstg Tsd RthJA RthJC Value 32 32 5 50 100 310 150 –55...+150 260 400 150 Unit V V V mA mA mW °C °C °C K/W K/W tp/T = 0.5, tp 10 ms Tamb 25 °C x x t x5s TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 1 (6) BPW14N Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Collector Base Capacitance Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Voltage Turn–On Time Turn–Off Time Cut–Off Frequency Test Conditions IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E=0 VCB = 5 V, f = 1 MHz, E=0 Symbol V(BR)CEO ICEO CCEO CCBO ϕ Min 32 Typ Max Unit V nA pF pF deg nm nm V IC = 1 mA, IB = 100 mA VS=5V, IC=5mA, RL=100W VS=5V, IC=5mA, RL=100W VS=5V, IC=5mA, RL=100W lp l0.5 ton toff fc 1 5.7 6.5 ±10 780 520...950 100 VCEsat 3.2 2.7 170 0.3 ms ms kHz Type Dedicated Characteristics Tamb = 25_C Parameter Collector Light Current g Test Conditions Ee=1mW/cm2, l=950nm, VCE=5V Type BPW14NB BPW14NC Symbol Ica Ica Min 1.0 1.7 Typ 1.5 3.0 Max 2.0 Unit mA mA 2 (6) TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 BPW14N Typical Characteristics (Tamb = 25_C unless otherwise specified) 800 P tot – Total Power Dissipation ( mW ) Ica – Collector Light Current ( mA ) 10 BPW 14 NC 1 BPW 14 NB 600 RthJC 400 0.1 200 RthJA 0 0 25 50 75 100 125 150 VCE=5V l=950nm 0.01 0.01 94 8339 0.1 1 10 94 8329 Tamb – Ambient Temperature ( °C ) Ee – Irradiance ( mW / cm2 ) Figure 1. Total Power Dissipation vs. Ambient Temperature 106 I CEO – Collector Dark Current ( nA ) Ica – Collector Light Current ( mA ) 105 104 103 102 101 100 20 94 8330 Figure 4. Collector Light Current vs. Irradiance 10 BPW 14 NB l=950nm VCE=20V Ee=1 mW/cm2 1 0.5 mW/cm2 0.2 mW/cm2 0.1 mW/cm2 0.1 50 100 150 94 8340 0.1 1 10 100 Tamb – Ambient Temperature ( °C ) VCE – Collector Emitter Voltage ( V ) Figure 2. Collector Dark Current vs. Ambient Temperature 3.5 I ca rel – Relative Collector Current 3.0 2.5 2.0 1.5 1.0 0.5 0 0 94 8331 Figure 5. Collector Light Current vs. Collector Emitter Voltage C CEO – Collector Emitter Capacitance ( pF ) 20 16 f=1MHz 12 VCE=5V Ee=1mW/cm2 l=950nm 8 4 0 0.1 1 10 100 VCE – Collector Emitter Voltage ( V ) 50 100 150 94 8335 Tamb – Ambient Temperature ( °C ) Figure 3. Relative Collector Current vs. Ambient Temperature Figure 6. Collector Emitter Capacitance vs. Collector Emitter Voltage TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 3 (6) BPW14N t on / t off – Turn on / Turn off Time ( m s ) 8 S rel – Relative Sensitivity VCE=5V RL=100W l=950nm 0° 10 ° 20 ° 30° 6 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 4 ton 2 toff 0 0 2 4 6 8 10 12 14 94 8336 IC – Collector Current ( mA ) 94 8351 Figure 7. Turn On/Turn Off Time vs. Collector Current Figure 9. Relative Radiant Sensitivity vs. Angular Displacement – Relative Spectral Sensitivity 1.0 0.8 0.6 0.4 0.2 0 400 S( l ) rel 600 94 8337 l – Wavelength ( nm ) 800 1000 Figure 8. Relative Spectral Sensitivity vs. Wavelength 4 (6) TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 BPW14N Dimensions in mm 96 12180 TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 5 (6) BPW14N Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 6 (6) TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96