CNY21N

CNY21N Optocoupler with Phototransistor Output Description The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4-lead plastic dual inline package. The single components are mounted on one leadframe in the opposite position, providing a fixed distance between input and output for highest safety requirements of > 3 mm. 95 10533 Application Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): D For application class I - IV at mains voltage ≤ 300 V D For application class I - IV at mains voltage ≤ 600 V D For application class I - III at mains voltage ≤ 1000 V according, to VDE 0884, table 2, suitable for: Switch-mode power supplies, computer peripheral interface, microprocessor system interface, line receiver. These couplers perform safety functions according to the following equipment standards: D VDE 0884 D D D D D D Optocoupler providing protective separation VDE 0804 Telecommunication apparatus and data processing VDE 0805/IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) VDE 0860/lEC 65 Safety for mains operated electronic and related household apparatus VDE 0700/IEC 335 Household equipment VDE 0160 Electronic equipment for electrical power installation VDE 0750/IEC 601 Medical equipment Pin Connection A (+) C C (–) E TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 95 10850 1 (10) CNY21N Features According to VDE 0884 D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 2.8 kV peak D Rated isolation voltage (RMS includes DC) VIOWM = 1000 VRMS (1450 V peak) D D D D D Thickness through insulation > 3 mm Isolation materials according to UL 94 Pollution degree 2 (DIN/VDE 0110) Climatic classification 55/085/21 (IEC 68 part 1) Further approvals: BS 415, BS 7002, SETI: IEC 950, UL 1577: File no: E 76222 capacity of typical 0.3 pF, high Common Mode Rejection D Rated recurring peak voltage (repetitive) VIORM = 1000 VRMS D Special construction: therefore extra low coupling D Low temperature coefficient of CTR D Current Transfer Ratio (CTR) of typical 60% D Creeping current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 Absolute Maximum Ratings Input (Emitter) Parameters Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM Ptot Tj Value 5 50 1.5 120 100 Unit V mA A mW °C tp ≤ 10 ms Tamb ≤ 25°C Output (Detector) Parameters Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC ICM Ptot Tj Value 32 5 50 100 130 100 Unit V V mA mA mW °C tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameters AC isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Test Conditions Tamb ≤ 25°C Symbol VIO Ptot Tamb Tstg Tsd Value 8.2 250 –55 to +85 –55 to +100 260 Unit kV mW °C °C °C 2 mm from case t ≤ 10 s 2 (10) TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 CNY21N Maximum Safety Ratings Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 120 Unit mA 1) (according to VDE 0884) Output (Detector) Parameters Power dissipation Test Conditions Tamb ≤ 25°C Symbol Psi Value 250 Unit mW Coupler Parameters Rated impulse voltage Safety temperature 1) Test Conditions Symbol VIOTM Tsi Value 8 180 Unit kV °C This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Derating Diagram 250 225 200 mA ( mA ) 175 150 125 100 75 50 25 0 0 95 10888 Psi (mW) Isi (mA) 25 50 75 100 125 150 175 200 Tamb ( °C ) TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 3 (10) CNY21N Electrical Characteristics Tamb = 25°C Input (Emitter) Parameters Forward voltage Breakdown voltage Junction capacitance Test Conditions IF = 50 mA IR = 100 mA VR = 0, f = 1 MHz Symbol VF V(BR) Cj Min. 5 50 Typ. 1.25 Max. 1.6 Unit V V pF Output (Detector) Parameters Collector emitter breakdown voltage Emitter collector breakdown voltage Collector emitter cut-off current Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, If = 0 Symbol V(BR)CEO V(BR)ECO ICEO Min. 32 5 200 Typ. Max. Unit V V nA Coupler Parameters AC isolation test voltage (RMS) Collector emitter saturation voltage Cut-off frequency Coupling capacitance IC/IF Test Conditions f = 50 Hz, t = 1 s IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 5 mA, RL = 100 W f = 1 MHz IF = 10 mA, VCE = 5 V Symbol VIO VCEsat fc Ck CTR 170 0.3 0.6 Min. 8.2 Typ. Max. Unit kV V kHZ pF 0.3 0.25 4 (10) TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 CNY21N Switching Characteristics (Typical Values) VS = 5 V Type yp CNY21N td[ms] 2.6 tr[ms] 2.4 RL = 100 W (see figure 1) RL = 1 kW (see figure 2) ton[ms] ts[ms] tf[ms] toff[ms] IC[mA] ton[ms] toff[ms] IF[mA] 5.0 0.3 2.7 3.0 5 11 13.5 20 IF 0 R G = 50 W tp T = 0.01 IF +5V IC = 5 mA; Adjusted through input amplitude t p = 50 ms Channel I Oscilloscope Channel II 50 W 95 10900 100 W RL CL w 1 MW v 20 pF Figure 1. Test circuit, non-saturated operation IF 0 R G = 50 W tp T = 0.01 IF = 20 mA +5V IC t p = 50 ms Channel I Oscilloscope Channel II 50 W 1 kW RL CL w 1 MW v 20 pF 95 10901 Figure 2. Test circuit, saturated operation TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 5 (10) CNY21N Insulation Rated Parameters (according to VDE 0884) Parameters Routine test Partial discharge Partial discharge Lot test (sample test) sample test) test voltage Test Conditions 100%, ttest = 1 s tTr = 10 s, tt t = 60 s test 60 (see figure 3) VIO = 500 V VIO = 500 V, Tamb = 100°C VIO = 500 V, Tamb = 180°C (construction test only) Symbol Vpd VIOTM Vpd RIO RIO RIO Min. 2.8 8 2.2 1012 1011 109 Typ. Max. Unit kV kV kV W W W Insulation resistance Insulation resistance VIOTM V t1, t2 = 1 to 10 s t3, t4 = 1 s Vpd VIOWM VIORM 0 t3 t1 94 9225 ttest = 60 s tstress = 62 s t4 t t2 tTr =10 s Figure 3. Test pulse diagram for sample test according to DIN VDE 0884 6 (10) TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 CNY21N Typical Characteristics (Tamb = 25°C, unless otherwise specified) 200 P tot – Total Power Dissipation ( mW ) 160 10000 ICEO– Collector Dark Current, with open Base ( nA ) VCE=20V IF=0 1000 120 Coupled Device 80 Phototransistor IR-Diode 100 40 0 0 10 1 25 50 75 100 95 11005 0 25 50 75 100 95 11003 Tamb – Ambient Temperature ( °C ) Tamb – Ambient Temperature ( °C ) Figure 4. Total Power Dissipation vs. Ambient Temperature 1000.0 Figure 7. Collector Dark Current vs. Ambient Temperature 100 IC – Collector Current ( mA ) VCE=5V 10 I F – Forward Current ( mA ) 100.0 10.0 1 1.0 0.1 0.1 0 96 11862 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 95 11006 0.1 1 10 100 IF – Forward Current ( mA ) Figure 5. Forward Current vs. Forward Voltage 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 Tamb – Ambient Temperature ( °C ) IC – Collector Current ( mA ) VCE=5V IF=10mA Figure 8. Collector Current vs. Forward Current 100 IF=50mA 20mA 10 10mA 5mA CTR rel – Relative Current Transfer Ratio 2mA 1 1mA 0.1 0.1 95 11007 1 10 100 96 11909 VCE – Collector Emitter Voltage ( V ) Figure 6. Rel. Current Transfer Ratio vs. Ambient Temperature Figure 9. Collector Current vs. Collector Emitter Voltage TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 7 (10) CNY21N Typical Characteristics (Tamb = 25°C, unless otherwise specified) V CEsat – Collector Emitter Saturation Voltage ( V ) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 IC – Collector Current ( mA ) 10% 100 95 10994 CTR=50% t on / t off – Turn on / Turn off Time ( m s ) 1.0 20 16 ton 12 toff 8 4 0 0 5 10 15 20 IF – Forward Current ( mA ) Saturated Operation VS=5V RL=1kW 20% 96 11910 Figure 10. Collector Emitter Sat. Voltage vs. Collector Current 1000 CTR – Current Transfer Ratio ( % ) Figure 12. Turn on / off Time vs. Forward Current 20 Non Saturated Operation VS=5V RL=100W t on / t off – Turn on / Turn off Time ( m s ) 15 100 10 ton 5 toff 0 10 VCE=5V 1 0.1 1 10 100 0 95 10993 2 4 6 8 10 95 11009 IF – Forward Current ( mA ) IC – Collector Current ( mA ) Figure 11. Current Transfer Ratio vs. Forward Current Figure 13. Turn on / off Time vs. Collector Current 8 (10) TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 CNY21N Dimensions in mm 20.0 19.6 19.8 19.6 1.8 5.1 4.5 3.7 3.5 1.54 0.58 0.48 15.24 A C 3.3 0.35 0.25 8.22 7.42 6.4 6.2 95 10948 C E technical drawings according to DIN specifications TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 9 (10) CNY21N Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 10 (10) TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96