SI9945DY

Si9945DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) 60 rDS(on) (W) 0.10 @ VGS = 10 V 0.20 @ VGS = 4.5 V ID (A) "3.3 "2.5 D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T 150 Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg Symbol VDS VGS Limit 60 "20 "3.3 "2.6 10 1.7 2.0 1.3 –55 to 150 Unit V A W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70133. A SPICE Model data sheet is available for this product (FaxBack document #70516). Symbol RthJA Limit 62.5 Unit _C/W Siliconix S-47958—Rev. G, 15-Apr-96 1 Si9945DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistance Drain-Source On-State Resistanceb Forward Transconductance b Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 3.3 A VGS = 4.5 V, ID = 2.5 A VDS = 15 V, ID = 3.3 A IS = 1.7 A, VGS = 0 V 7.0 0.8 1.2 10 0.10 0.20 1.0 "100 1 25 V nA mA A W S V Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 30 V, RL = 30 W , ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 30 V, VGS = 10 V, ID = 3.3 A 10 3 15 2.1 4.5 9 10 25 14 70 25 30 50 40 100 ns 30 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. 2 Siliconix S-47958—Rev. G, 15-Apr-96 Si9945DY Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics 20 VGS = 9, 8, 7, 6 V I D – Drain Current (A) 20 TC = –55_C 16 25_C Transfer Characteristics 16 I D – Drain Current (A) 12 5V 8 12 125_C 8 4 4V 3V 4 0 0 2 4 6 8 10 VDS – Drain-to-Source Voltage (V) 0 0 1 2 3 4 5 6 7 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.5 1000 Capacitance rDS(on) – On-Resistance ( W ) 0.4 C – Capacitance (pF) 800 0.3 VGS = 4.5 V 0.2 VGS = 10 V 600 Ciss 400 0.1 200 Crss Coss 0 0 2 4 6 8 10 ID – Drain Current (A) 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) 10 VGS – Gate-to-Source Voltage (V) VDS = 60 V ID = 0.4 A Gate Charge 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.3 A 6 rDS(on) – On-Resistance ( W ) (Normalized) 0 3 6 9 12 15 8 1.6 1.2 4 0.8 2 0.4 0 0 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Siliconix S-47958—Rev. G, 15-Apr-96 3 Si9945DY Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain Diode Forward Voltage 0.30 0.25 I S – Source Current (A) 10 TJ = 150_C TJ = 25_C rDS(on) – On-Resistance ( W ) 0.20 0.15 ID = 3.3 A 0.10 0.05 0 0 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 1 1.0 Threshold Voltage 200 Single Pulse Power 160 0.5 VGS(th) Variance (V) Power (W) 100 125 150 ID = 250 mA 0.0 120 80 –0.5 40 –1.0 –50 0 –25 0 25 50 75 0.001 0.010 0.100 Time (sec) 1.0 10 TJ – Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: 0.1 0.1 0.05 0.02 Single Pulse 10–4 10–3 10–2 10–1 1 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) 4 Siliconix S-47958—Rev. G, 15-Apr-96