SI9947DY

Si9947DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) –20 rDS(on) (W) 0.10 @ VGS = –10 V 0.19 @ VGS = –4.5 V ID (A) "3.5 "2.5 Recommended upgrade: Si4947DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 D1 P Channel MOSFET D2 D2 P Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T 150 Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –20 "20 "3.5 "2.5 "10 –1.7 2.0 1.3 –55 to 150 Unit V A W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70134. A SPICE Model data sheet is available for this product (FaxBack document #70636). Symbol RthJA Limit 62.5 Unit _C/W Siliconix S-47958—Rev. F, 15-Apr-96 1 Si9947DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –16 V, VGS = 0 V VDS = –10 V, VGS = 0 V, TJ = 70_C VDS v –5 V, VGS = –10 V VDS v –5 V, VGS = –4.5 V VGS = –10 V, ID = 3.5 A VGS = –4.5 V, ID = 2 A VDS = –15 V, ID = –3.5 A IS = –1.7 A, VGS = 0 V 4.0 –0.9 –1.2 –14 –2.5 0.10 0.19 A W S V –1.0 "100 –1 –5 V nA mA Symbol Test Condition Min Typa Max Unit On-State Drain Current On-State Drain Currentb ID(on) Drain-Source On-State Resistance Drain-Source On-State Resistanceb Forward Transconductance b Diode Forward Voltageb rDS(on) gfs VSD Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –3.5 A, di/dt = 100 A/ms VDD = –10 V, RL = 10 W , ID ^ –1 A, VGEN = –10 V, RG = 6 W A V VDS = –10 V, VGS = –10 V, ID = –3.5 A 13 2 5 21 12 12 11 50 40 25 30 20 100 ns 30 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. 2 Siliconix S-47958—Rev. F, 15-Apr-96 Si9947DY Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics 10 VGS = 10, 9, 8, 7, 6, 5 V 8 I D – Drain Current (A) 4V I D – Drain Current (A) 8 10 Transfer Characteristics 6 6 4 3V 4 TC = 125_C 25_C 0 –55_C 2 2 2V 0 0 2 4 6 8 10 VDS – Drain-to-Source Voltage (V) 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.32 2000 Capacitance rDS(on) – On-Resistance ( W ) C – Capacitance (pF) 0.24 1500 0.16 VGS = 4.5 V 1000 0.08 VGS = 10 V Ciss 500 Coss 0 0 2 4 6 8 10 ID – Drain Current (A) 0 0 Crss 4 8 12 16 20 VDS – Drain-to-Source Voltage (V) 10 VGS – Gate-to-Source Voltage (V) VDS = 10 V ID = 3.5 A Gate Charge 1.4 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.5 A rDS(on) – On-Resistance ( W ) (Normalized) 8 1.2 6 1.0 4 0.8 2 0 0 2 4 6 8 10 12 14 0.6 –50 0 50 100 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Siliconix S-47958—Rev. F, 15-Apr-96 3 Si9947DY Typical Characteristics (25_C Unless Otherwise Noted) 10 Source-Drain Diode Forward Voltage TJ = 150_C rDS(on) – On-Resistance ( W ) 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 On-Resistance vs. Gate-to-Source Voltage I S – Source Current (A) TJ = 25_C ID = 3.5 A 1 0 0 0.5 1.0 1.5 2.0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) 1.0 Threshold Voltage ID = 250 mA 25 Single Pulse Power 20 0.5 VGS(th) Variance (V) Power (W) 15 0.0 10 –0.5 5 –1 –50 0 50 TJ – Temperature (_C) 100 150 0 10–2 10–1 1 Time (sec) 10 30 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 10–2 10–1 1 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) 4 Siliconix S-47958—Rev. F, 15-Apr-96