SUB75N06-08

SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) 60 TO-220AB TO-263 G DRAIN connected to TAB GDS Top View SUB75N06-08 S N-Channel MOSFET rDS(on) (W) 0.008 ID (A) 75a D GD S Top View SUP75N06-08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) 175 Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Power Dissipation Energyb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C Symbol VGS ID IDM IAR EAR PD TJ, Tstg Limit "20 75a 55 240 60 280 187c 3.7 –55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range Thermal Resistance Ratings Parameter PCB Mount (TO-263)d Junction-to-Ambient Junction to Ambient Free Air (TO-220AB) Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document # 70283. A SPICE Model data sheet is available for this product (FaxBack document #70527). RthJA RthJC Symbol Limit 40 62.5 0.8 Unit _C/W Siliconix S-47969—Rev. D, 08-Jul-96 1 SUP/SUB75N06-08 Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Drain Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductance b gfs VDS = 15 V, ID = 30 A 30 120 0.007 0.008 0.012 0.016 S W 60 2.0 3.0 4.0 "100 1 50 150 A mA nA V Symbol Test Condition Min Typ Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.47 W , ID ^ 75 A, VGEN = 10 V, RG = 2.5 W 75 A 10 V 5 VDS = 30 V, VGS = 10 V, ID = 75 A VGS = 0 V, VDS = 25 V, f = 1 MHz 4800 910 270 85 28 26 20 95 65 20 40 200 120 60 ns 120 nC pF Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source Drain Diode Ratings and Characteristics (TC = 25_C)a Continuous Current Pulsed Current Forward Voltageb Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 75 A, di/dt = 100 A/ms IF = 75 A , VGS = 0 V 1.0 67 6 0.2 75 240 1.3 120 8 0.48 V ns A mC A Notes a. Guaranteed by design, not subject to production testing. b. Pulse test: pulse width v 300 msec, duty cycle v 2%. c. Independent of operating temperature. 2 Siliconix S-47969—Rev. D, 08-Jul-96 SUP/SUB75N06-08 Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics 250 VGS = 10, 9, 8 V 200 I D – Drain Current (A) I D – Drain Current (A) 6V 150 150 7V 200 Transfer Characteristics 100 100 5V 50 4V 0 0 2 4 6 8 10 VDS – Drain-to-Source Voltage (V) 50 TC = 125_C 25_C 0 0 2 4 –55_C 6 8 10 VGS – Gate-to-Source Voltage (V) Transconductance 120 100 g fs – Transconductance (S) 80 60 40 20 0 0 20 40 60 80 100 VGS – Gate-to-Source Voltage (V) TC = –55_C 25_C 125_C 0.010 On-Resistance vs. Drain Current rDS(on) – On-Resistance ( W ) 0.008 VGS = 10 V 0.006 VGS = 20 V 0.004 0.002 0 0 20 40 60 80 100 120 ID – Drain Current (A) 7000 6000 C – Capacitance (pF) 5000 4000 3000 2000 1000 0 0 10 20 Crss Capacitance VGS – Gate-to-Source Voltage (V) 20 VDS = 30 V ID = 75 A Gate Charge 16 Ciss 12 8 Coss 4 0 30 40 50 60 0 25 50 75 100 125 150 175 VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC) Siliconix S-47969—Rev. D, 08-Jul-96 3 SUP/SUB75N06-08 Typical Characteristics (25_C Unless Otherwise Noted) 2.5 On-Resistance vs. Junction Temperature 100 VGS = 10 V ID = 30 A I S – Source Current (A) Source-Drain Diode Forward Voltage rDS(on) – On-Resistance ( W ) (Normalized) 2.0 TJ = 150_C TJ = 25_C 10 1.5 1.0 0.5 0 –50 –25 1 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) Thermal Ratings 100 Maximum Avalanche and Drain Current vs. Case Temperature 500 Safe Operating Area 80 I D – Drain Current (A) I D – Drain Current (A) 100 Limited by rDS(on) 10 ms 60 100 ms 40 1 ms 10 TC = 25_C Single Pulse 1 20 10 ms 100 ms dc 100 0 0 25 50 75 100 125 150 175 TC – Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 0.1 1 10 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 10–1 1 3 Square Wave Pulse Duration (sec) 4 Siliconix S-47969—Rev. D, 08-Jul-96