U2791B

TELEFUNKEN Semiconductors U2791B 1000 MHz Quadrature Demodulator Description U2791B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TELEFUNKEN’s advanced UHF technology. This demodulator features a frequency range from 100 – 1000 MHz, low current consumption, selectable gain, power down mode and is adjustment free. The IC is suitable for direct conversion and image rejection applications in digital radio systems up to 1 GHz such as cellular radio, cordless telephone, cable TV and satellite TV systems. Features D Supply voltage 5 V (typ.) D Very low power consumption 125 mW (typ.) D Very good image rejection by means of phase control loop for precise 90° phase shifting D Duty cycle regeneration for single ended LO input signal D D D D Low LO input level –10 dBm (typ.) LO – frequency from 100 MHz to 1 GHz Power down mode 25 dB gain control Block Diagram VS 5,6 Power down PD 14 IIX 4 II 3 1 IX OUTPUT 2I 7 RFin 8 90°Control loop 0° 90° Frequency doubler Duty cycle regenerator 17 LO 13 PC 12 PCX Q 19 OUTPUT 20 QX 11 GC 15,16,18 GND 10 QQX 9 QQ 95 9755 Rev. A2: 08.06.1995 1 (11) U2791B Pin Description IX I II IIX VS VS RFin RFXin QQ QQX 1 2 3 4 5 6 7 8 9 10 94 9441 TELEFUNKEN Semiconductors 20 QX 19 Q 18 17 GND LOin 16 GND 15 GND 14 PD 13 PC 12 PCX 11 GC Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Symbol IX I II IIX VS VS RFin RFXin QQ QQX GC PCX PC PD GND GND LOin GND Q QX Function IX output I output II low pass filter I IIX low pass filter I Supply voltage Supply voltage RF input RFX input QQ low pass filter Q QQX low pass filter Q GC gain control PCX phase control PC phase control PD power down Ground Ground LO input Ground Q output QX output Electrostatic sensitive device observe precautions for handling. Absolute Maximum Ratings Parameters Supply voltage Pins 5 and 6 Input voltage Pins 7, 8 and 17 Junction temperature Storage temperature range Symbol VS Vi Tj Tstg Value 6 0 to VS 125 –40 to 125 Unit V V °C °C Operating Range Parameters Supply voltage range Pins 5 and 6 Ambient temperature range Symbol VS Tamb Value 4.75 to 5.25 –40 to 85 Unit V °C Thermal Resistance Junction ambient Parameters SSO 20 Symbol RthJA Value 140 Unit K/W 2 (11) Rev. A2: 08.06.1995 TELEFUNKEN Semiconductors U2791B Electrical Characteristics Test conditions (unless otherwise specified); VS = 5 V, Tamb = 25°C, referred to test circuit System impedance ZO = 50 W, fiLO = 950 MHz, PiLO = –10 dBm Parameters Supply voltage range Supply current Power down mode, PD “OFF”mode supply current Switch voltage “Power ON” “Power DOWN” LO input, LOin Frequency range Input level Input impedance Voltage standing wave ratio Duty cycle range RF input, RFin Noise figure (DSB) symmetrical output Frequency range –1 dB input compression point Second order IIP Third order IIP Test Conditions / Pins Pins 5 and 6 Pins 5 and 6 VPD ≤ 0.5 V Pins 5, 6 VPD = 1.0 V Pin 14 Note 1 Pin 14 Symbol VS IS IsPD Min. 4.75 Typ. 30 ≤1 20 Max. 5.25 Unit V mA mA VPON VPOFF Pin 17 Note 2 See figure 6 See figure 2 fiLO PiLO ZiLO VSWRLO LODCR @ 950 MHz Note 3 @ 100 MHz Pins 7 and 8 Pins 7 and 8 Pins 7 and 8 High gain Low gain Note 4 High gain Low gain NF 4 1 100 –12 1000 –5 V V MHz dBm –10 50 1.2 W 0.4 12 10 2 0.6 dB fiRF ICPHG ICPLG IIP2HG IIP3HG IIP3LG LOL –8 +3.5 35 +3 +13 ≤ –60 ≤ –55 500Wø 0.8pF >fiLO dBm dBm dBm Pins 7 and 8 Pins 7 and 8 LO leakage Input impedance Pins 7 and 8 Symmetric input Asymmetric input Pins 7 and 8 see figure 6 dBm ZiRF Note 1: During power down status a load circuitry with dc-isolation to GND is assumed otherwise a current of I (VS –0.8 V) /RI has to be added to the above power down current for each output I, IX, Q, QX. Note 2: The required LO-Level is a function of the LO-frequency (see figure 3). Note 3: Measured with input matching. For 950 MHz the optional transmission line T3 at the RF input may be used for this purpose. Noise figure measurements without using the differential output signal result in a worse noise figure. Note 4: Using Pins 7 and 8 as a symmetric RF input, the second order IIP can be improved.  Rev. A2: 08.06.1995 3 (11) U2791B Electrical Characteristics TELEFUNKEN Semiconductors Test conditions (unless otherwise specified); VS = 5 V, Tamb = 25°C, referred to test circuit System impedance ZO = 50 W, fiLO = 950 MHz, PiLO = –10 dBm Parameters I/O outputs Test Conditions / Pins Emitter follower I = 0.6 mA Note 5 Pins 1, 2, 19 and 20 Symbol I, IX / Q, QX BWI/Q AII/Q QEI/Q Max I/Q VOUT VOFSI/Q I/IX Q/QX Zout Min. Typ. Max. Unit 3-dB bandwidth w/o external C I/Q amplitude Pins 1, 2, 19 and 20 imbalance I/Q quadrature error Pins 1, 2, 19 and 20 I/Q maximum output Pins 1, 2, 19 and 20 swing Symm. output RL > 5 kW DC output voltage Pins 1, 2, 19 and 20 DC output offset voltage Note 6 Pins 1, 2, 19 and 20 ≥ 30 ≤ ±0.2 ≤ ±1.5 2 2.8 ≤ 30 MHz dB Deg VPP V mV Output impedance Gain control, GC Control range power gain, gain high/gain low Switch voltage “Gain high” “Gain low” Settling time, ST Power “OFF ” – “ON ” Power “ON ” – “OFF ” Pins 1, 2, 19 and 20 see figure 6 Note 7 Pin 11 50 W GCR PGH/GGL GCVHigh GCVLow STON STOFF 25 23/–2 1 dB Note 8 Pin 11 Pin 11 V V m m