U3660M-B

U3660M-B Baseband Delay Line (64 ms) Description The U3660M is an integrated baseband delay line circuit. It provides a delay of 64 ms for the color difference signals, ±(R-Y) and ±(B-Y), in multi-standard TVs. Features D One line delay time, addition of delayed and nondelayed output signals D Adjustment-free application, VCO without external components D Line-locked by the sandcastle pulse D No crosstalk between SECAM colour carriers (diaphoty) D Handles negative or positive colour-difference input signals D Comb filtering functions for NTSC colour-difference signals D Clamping of ac-coupled input signals [±(R-Y) and ±(B-Y)] D Correction of phase errors in the PAL system Block Diagram Ref 13 Bias "(B–Y) 14 "(R–Y) 16 Vref Clamping Line memory Shift register Clamping S+H S+H LPF + 12 "(B–Y) "(R–Y) Line memory Vref + 11 LPF 3 MHz fsc V DD2 GND2 1 SC detector Control 9 V DD1 GND1 Clock generator PLL 3 5 10 94 8223 SSC pulse Figure 1. Block diagram TELEFUNKEN Semiconductors Rev. A2, 13-Dec-96 1 (7) U3660M-B Pin Description VDD2 NC GND2 NC SC NC NC NC 1 2 3 4 5 6 7 8 95 11252 16 Vi(R-Y) 15 NC 14 Vi(B-Y) 13 Rref 12 VO(B-Y) 11 VO(R-Y) 10 GND1 9 VDD1 Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Symbol VDD2 NC GND2 NC SC NC NC NC VDD1 GND1 VO(R-Y) VO(B-Y) Rref Vi(B-Y) NC Vi(R-Y) Function Supply voltage for digital part Not connected Ground for digital part Not connected Sandcastle pulse input Not connected Not connected Not connected Supply voltage for analog part Ground for analog part ±(R-Y) output signal ±(B-Y) output signal Resistor for internal reference ±(B-Y) input signal Not connected ±(R-B) input signal Figure 2. Connection diagram Absolute Maximum Ratings Parameters Supply voltage (Pin 9) Supply voltage (Pin 1) Voltage at Pins 5, 11, 12, 14 and 16 Output current, Pins 11 and 12 Max. power dissipation Storage temperature range Electrostatic protection* for input/output pins * Symbol VDD1 VDD2 Vn Iout P Tstg Value –0.5 to +7 –0.5 to +7 –0.5 to VS 20 1.1 –25 to +150 ±200 Unit V V V mA W °C V MIL standard 883D, method 3015.7 machine model (all power pins connected together). Operating Range Parameters Supply voltage range (Pins 1 and 9) Ambient temperature range Symbol VS Tamb Value 4.5 to 6.0 0 to +70 Unit V °C Thermal Resistance Parameters Junction ambient Symbol RthJA Value 80 Unit K/W 2 (7) TELEFUNKEN Semiconductors Rev. A2, 13-Dec-96 U3660M-B Electrical Characteristics VDD = 5.0 V, Tamb = +25°C, reference point Pin 3 and Pin 10 connected together, super-sandcastle frequency of 15.625 kHz; unless otherwise specified. Parameters Test Conditions / Pins DC-supply Pins 1 and 9 Supply voltage Pin 9 (analog part) Supply voltage Pin 1 (digital part) Supply current Pin 9 (analog part) Supply current Pin 1 (digital part) Power dissipation Colour-difference input signals Pins 14 and 16 Input signal (peak-to-peak value) ±(R-Y) PAL and NTSC Pin 16 ±(B-Y) PAL and NTSC Pin 14 ±(R-Y) SECAM Pin 16 ±(B-Y) SECAM Pin 14 Input resistance Pins 14 and 16 Input capacitance Pins 14 and 16 Input clamping voltage non color input level during clamping, Pins 14 and 16 Colour-difference output signals Pins 11 and 12 Output signal (peak-to-peak value) ±(R-Y) at Pin 11 all standards ±(B-Y) at Pin 12 all standards Ratio of output amplitudes at equal input signals DC output voltage Pins 11 and 12 Output resistance Pins 11 and 12 Gain for PAL and NTSC ratio VO/Vi ratio VO/Vi Gain for SECAM Ratio of output signals on Vi 14,16 = 1.33 V Pins 11 and 12 for adjacent (peak-to-peak value) time samples at constant in- SECAM signals put signals Noise voltage (RMS value, Pins 11 and 12) Delay of delayed signals Delay of non-delayed signals Vi 14,16 = 0 RGen < 300 W f = 10 kHz to 1 MHz Symbol VDD1 VDD2 IS1 IS2 P Min. 4.5 4.5 Typ. 5.0 5.0 3.5 1 30 Max. 6.0 6.0 8.0 2 60 Unit V V mA mA mW Vi Vi Vi Vi R14, 16 C14, 16 V14, 16 0.525 0.665 1.05 1.33 1.0 1.0 2.0 2.0 40 10 1.45 V V V V kW pF V VO VO V11 V12 V11, 12 R11, 12 Gv Gv V(n) V(n+1) –0.4 1.05 1.33 0 3.0 +0.4 V V dB 5.5 –1.0 –0.1 6.0 0 400 6.5 +1.0 +0.1 W dB dB dB V Vnoise 1.2 mV td td 63.94 64.0 85 64.06 ms ns TELEFUNKEN Semiconductors Rev. A2, 13-Dec-96 3 (7) U3660M-B Parameters Transient time of delayed signal at Pin 11 respectively Pin 12 Transient time of nondelayed signal at Pin 11 respectively Pin 12 Sandcastle pulse input Sandcastle frequency Top pulse voltage Test Conditions / Pins 300 ns transient of SECAM input signal, Cload = 22 pF 300 ns transient of SECAM input signal, Cload = 22 pF Pin 5 the leading edge of the burst-key pulse is used for timing fSC V5 14.0 3 15.625 17.0 7 kHz V Symbol ttr Min. Typ. 550 Max. Unit ns ttr 350 ns Internal slicing level Input current Input capacitance Vslice I5 C5 V5 –2.0 V5 –1.5 V5 –1.0 10 10 mA pF V +12 V 560W 5V1 10 W 10 W 47 mF 47 mF 22 nF –(R–Y) 1 nF 16 Chroma decoder –(B–Y) 1 nF 1 9 22 nF nc –(R–Y) 2,4,6,7,8,15 11 U 3660 M 14 5 13 3 10 –(B–Y) 12 SC pulse 11 kW 6.8 kW Rref 1 MW 220 nF 94 8280 Figure 3. Typical application circuit 4 (7) TELEFUNKEN Semiconductors Rev. A2, 13-Dec-96 U3660M-B Internal Pin Circuits 11,12 14,16 94 8678 94 8676 Figure 4. Colour difference signal inputs Figure 5. Colour difference signal outputs 94 8675 13 5 94 8677 Figure 6. Sandcastle pulse input Figure 7. Internal reference voltage TELEFUNKEN Semiconductors Rev. A2, 13-Dec-96 5 (7) U3660M-B Dimensions in mm Package: DIP16 94 9128 6 (7) TELEFUNKEN Semiconductors Rev. A2, 13-Dec-96 U3660M-B Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TELEFUNKEN Semiconductors Rev. A2, 13-Dec-96 7 (7)