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U4065B-AFL

U4065B-AFL

  • 厂商:

    TEMIC

  • 封装:

  • 描述:

    U4065B-AFL - FM Receiver - TEMIC Semiconductors

  • 数据手册
  • 价格&库存
U4065B-AFL 数据手册
U4065B FM Receiver Description The IC U4065B is a bipolar integrated FM-frontend circuit. It contains a mixer, an oscillator, two IF preamplifiers and an unique interference sensor. The device is designed for high performance car radio and home receiver applications. Features D All frontend functions of a high performance FMreceiver, except the RF preamplifier, are integrated D Easy cascading of three IF filters (ceramic) by use of two on-chip IF preamplifiers D Improved dynamic range by high current double balanced mixer design and a new AGC conception with 3 loops on chip D On-chip control functions are available for system gain adjust (dB linear vs. dc current) D Improved blocking and intermod behavior by use of an unique “interference” sensor controlling the AGC D Low noise LO design D ESD protected Block Diagram ANT VS IF tank IF BPF IF gain adjust IF BPF IF outp IF BPF RF tank 16 14 15 19 18 20 21 4 7 5 3 VS 2 Mixer IF 1 IF 2 PIN ATT AGC RF RF tank D.N.C. 12 Interference mixer wide band & IF 13 AGC adjust (wide band) Vref = 4 V LO tank IF& 23 24 Local oscill. detector Voltage reg. 17 22 1 11 Interference IF BPF 9 8 10 6 + VS LO output Vtune VS AGC level 94 8768 Rev. A3, 15-Oct-98 1 (23) U4065B Pin Description Pin 1 2 3 4 5 6 7 8 9 10 11 12 Symbol LOBUFF GND1 IF2OUT GAINIF1 IF2IN VS IF1OUT GND2 IMIFIN Function Buffered local oscillator output Ground of the second IF amplifier Output of the second IF amplifier Gain control of the first IF amplifier Input of the second IF amplifier Supply voltage Output of the first IF amplifier Ground Pin 13 14 15 16 17 18 19 20 21 22 23 24 Symbol AGCWB GND3 MIXIN1 MIXIN2 VREF MIXOUT1 MIXOUT2 GND4 IF1IN GND5 LOE LOB Function Threshold adjustment of the wideband AGC Mixer ground Input 1 of the double balanced mixer Input 2 of the double balanced mixer Reference voltage output Mixer output 1 Mixer output 2 Ground of the first IF amplifier Input of the first amplifier Oscillator ground Local oscillator (emitter) Local oscillator (base) Input of the amplifier for the IM-sensor AGCOUT Output of the automatic gain control IMMIXOUT Output of the intermodulation mixer D.N.C. Do not connect LOBUFF + 23 50 1 ESD 1V 94 8769 GND1 94 8770 Buffered local oscillator output: It drives the FM-input of the PLL circuit (for example U428xBM-family). The typical parallel output resistance at 100 MHz is 70 W, the parallel output capacitance is about 10 pF. When using an external load of 500 W / 10 pF, the oscillator swing is about 100 mV. The second harmonic of the oscillator frequency is less than – 15 dBc. 2 8 ESD Ground of the second IF amplifier: There is no internal connection to the other ground pins. 2 (23) Rev. A3, 15-Oct-98 U4065B IF2OUT 3 VS ESD The parallel input resistance is 330 W. The parallel input capacitance is about 12 pF. No dc current is allowed. To avoid overload of this stage an internal detector watches the input level and causes current at the AGCOUT pin. IF1OUT VS Vref Output of the second IF amplifier: The parallel output capacitance to ground is about 7 pF. The external load resistance is to connect to VS. The dc current into the pin is typically 3 mA. Note: Supply voltage VS has to be protected against IF-distortion 94 8774 94 8771 330 ESD 7 GAINIF1 17 Vref Output of the first IF amplifier: The parallel output resistance is 330 W which allows the use of a standard ceramic BPF. The parallel output capacitance is about 7 pF. The dc voltage at the pin is 0.5 V less than VS. 94 8772 2 kW ESD 4 IMIFIN Gain control of the first IF amplifier: The gain of the first IF amplifier can be adjusted by a resistor to ground. This is useful for example to compensate the insertion loss tolerances of the ceramic BPF’s. Please ensure that the output current of the pin does not exceed 150 mA in any case. Linear increasing in the current out of GAINIF1 effects dB linear increasing of the gain (0.15 dB/mA). I4 = 0 G= Gmin = 2 dB I4 = 140 mA G = Gmax = 22 dB 94 8775 9 å å ESD IF2IN Vref 94 8773 Input of the IF amplifier for the IM-sensor: 5 The parallel input resistance is 330 W. The amplifier is extremely sensitive to ac signals. A few hundred mV of IF-signal at this pin will cause current at the AGC output. Therefore pay attention when connecting the standard ceramic filter used between IMOUT and this pin. The reference point of the filter has to be free of any ac signal. Please avoid dc current at this pin. ESD Input of the second IF amplifier: Rev. A3, 15-Oct-98 3 (23) U4065B AGCOUT 10 94 8776 MIXIN1 Vref 2.5 k 15 1k 1V 94 8779 ESD ESD Output of the automatic gain control: The AGC output is an open collector output. The current of the pin diode is this current multiplied by the current gain of the external PNP transistor. The dc voltage at the pin may vary from 2 V to VS, therefore you can easily use this pin as an indicator of the AGC regulation state. Input 1 of the double balanced mixer: The parallel input resistance is 1.2 kW. The parallel input capacitance is about 9 pF. When using the mixer unbalanced this pin is to be grounded for RF-signals by an external capacitance of a few nF. DC current is not allowed. MIXIN2 Vref IMMIXOUT VS ESD 16 300 11 1V 94 8777 2.5 k ESD 94 8780 Input 2 of the double balanced mixer: Output of the intermodulation mixer: The parallel output resistance is 330 W which allows the use of a standard ceramic BPF without any further matching network. Please ensure that the ground-pin of the filter is free of ac signals. The parallel input resistance is 1.6 kW. The parallel input capacitance is about 7 pF. The double sideband noise figure of the unbalanced mixer is about 7 dB. In the balanced case the noise figure will be reduced by about 0.8 dB. VREF VS 94 8781 AGCWB Vref 25 k 4.6 V 200 17 32 k ESD Reference voltage: The internal temperature compensated reference voltage is 3.9 V. It is used as bias voltage for most blocks, so the electrical characteristics of the U4065B are widely independent of the supply voltage. The internal output resistance of the reference voltage is less than 10 W. To avoid internal coupling across this pin external capacitors are required. The maximum output current is Iref = 5 mA. Rev. A3, 15-Oct-98 ESD 94 8778 13 Threshold adjustment of the wideband AGC: The threshold of the wideband AGC can be adjusted by an external resistor to ground. The setting range is 10 dB. For minimum blocking this pin is connected to ground. In order to set the threshold to smaller levels the resistance value should be up to a few hundred kW. 4 (23) U4065B MIXOUT1, MIXOUT2 18 ESD 19 23 ESD LOE 94 8782 94 8785 Mixer output 1, 2: The mixer output is an open collector of a bipolar transistor. The minimum voltage at this pins is 5 V (VS-voltage swing). The dc current into this pins is typically 9 mA. Good LO- and RF suppression at the mixer output can be achieved by symmetrical load conditions at the pins MIXOUT1 and MIXOUT2. Emitter of the local oscillator: An external capacitor is connected between LOE and ground. The ground pin of this capacitor is to connect to the pin GND5. GND5 is the chip internal ground of the local oscillator. LOB IF1IN 24 21 330 94 8786 Vref ESD ESD Input of the first IF amplifier: 94 8784 Base of the local oscillator: The tank of the local oscillator is connected at pin LOB. The ground pin of this tank is to connect to the pin GND5. GND5 is the chip internal ground into pin 24 of the local oscillator. The resonant resistance of the tank should be about 250 W. Minimum Q of the unloaded tank is 50. The typical input resistance is 330 W. The dc voltage is nearly the same one as the reference voltage. Please avoid dc current at this pin. Rev. A3, 15-Oct-98 5 (23) U4065B Functional Description The U4065B FM-frontend IC is the dedicated solution for high end car radios. A new design philosophy enables to build up tuners with superior behavior. This philosophy is based on the fact that the sensitivity of state of the art designs is at the physical border and cannot be enhanced any more. On the other hand, the spectral power density in the FM-band increases. An improvement of reception can only be achieved by increasing the dynamic range of the receiver. This description is to give the designer an introduction to get familiar with this new product and its philosophy. hand two or more strong out of channel signals may interfere and generate an intermodulation signal on the desired frequency. By introducing input attenuation, the level of the intermod signal decreases by a higher order, whereas the level of the desired signal shows only a linear dependency on the input attenuation. Therefore input attenuation by pin diodes may keep up reception in the presence of strong signals. The standard solution to generate the pin diode current is to pick up the RF-signal in front of the mixer. Because the bandwidth at that point is about 1.5 MHz, this is called wideband AGC. The threshold of AGC start is a critical parameter. A low threshold does not allow any intermodulation but has the disadvantage of blocking if there is only one strong station on the band or if the intermod signals do not cover the desired channel. A higher AGC threshold may tolerate a certain ground floor of intermodulation. This avoids blocking, but it has the disadvantage, that no reception is possible, if the interfering signals do generate an intermod signal inside the desired channel. This contradiction could not be overcome in the past. With the new U4065B IC, a unique access to this problem appears. This product has an interference sensor on chip. Thus an input signal attenuation is only performed, if the interfering signals do generate an intermod signal inside the desired channel. If they do not, the still existing wideband AGC is yet active but at up to 20 dB higher levels. The optimum AGC state is always generated. The figures 1 to 4 illustrate the situation. In figure 1 the AGC threshold of a standard tuner is high to avoid blocking. But then the intermod signal suppresses the desired signal. The interference sensor of the U4065B takes care that in this case the AGC threshold is kept low as illustrated in figure 2. In figure 3 the situation is vice versa. The AGC threshold of a standard tuner is kept low to avoid intermod problems. But then blocking makes the desired signal level drop below the necessary stereo level. In this case, the higher wideband AGC level of the U4065B enables perfect stereo reception. By principle, this interference sensor is an element with a third order characteristic. For input levels of zero, the output level is zero, too. With increasing input level, the output level is increased with the power of three, thus preferring intermod signals compared to linear signals. At the same time, a down conversion to the IF level of 10.7 MHz is performed. If a corresponding 10.7 MHz IF filter selects the intermod signals, an output is only generated, if an intermod signal inside the 10.7 MHz channel is present. 1. The Signal Path The U4065B offers the complete signal path of an FMfrontend including a highly linear mixer and two IF preamplifiers. The mixer is a double balanced high current Gilbert Cell. A high transit frequency of the internal transistors enables the use of the emitter grounded circuit with its favorable noise behavior. The full balanced output offers LO carrier reduction. The following IF preamplifier has a dB-linear gain adjustment by dc means. Thus different ceramic filter losses can be compensated and the overall tuner gain can be adapted to the individual requirements. The low noise design suppresses post stage noise in the signal path. Input- and output resistance is 330 W to support standard ceramic filters. This was achieved without feedback, which would cause different input impedances when varying the output impedance. The second IF preamplifier enables the use of three ceramic filters with real 330 W input- and output termination. Feedthrough of signals is kept low. The high level of output compression is necessary to keep up a high dynamic range. Beneath the signal path the local oscillator part and the AGC signal generation can be found on chip. The local oscillator uses the collector grounded colpitts type. A low phase noise is achieved with this access. A mutual coupling in the oscillator coil is not necessary. 2. The AGC Concept Special care was taken to design a unique AGC concept. It offers 3 AGC loops for different kinds of reception conditions. The most important loop is the interference sensor part. In today’s high end car radios, the FM AGC is state of the art. It is necessary to reduce the influence of 3rd and higher order intermodulation to sustain reception in the presence of strong signals in the band. On one hand, it makes a sense to reduce the desired signal level by AGC as few as possible to keep up stereo reception, on the other 6 (23) Rev. A3, 15-Oct-98 U4065B The circuit blocks interference sensor and IF & detector build up a second IF chain. In an FM system, the max deviation of a 3rd order intermod signal is the triple max deviation of the desired signal. Therefore the ceramic IF BPF between Pin 11 and Pin 9 may be a large bandwidth type. This external part is the only additional amount for this unique feature. A further narrow band AGC avoids overriding the second IF amplifier. The amplitude information of the channel is not compressed in order to maintain multipath detection in the IF part of the receiver. Level Interfering signals 94 8820 Level 94 8821 Interfering signals Intermod signal Desired signal Intermod signal Desired signal Stereo-level Noise floor Intermod signal Noise floor Intermod signal Stereo-level Desired frequency Frequency Figure 1 A high AGC threshold causes the intermod signal to suppress the desired signal 94 8822 Level Strong signal Desired frequency Frequency Figure 3 A low AGC threshold causes the blocking signal to suppress the desired signal Rev. A3, 15-Oct-98 ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ Desired signal Stereo-level Noise floor ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ Desired frequency ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ Frequency Figure 2 The correct AGC threshold of the U4065B provides optimum reception Level Strong signal 94 8823 Desired signal Stereo-level Noise floor Desired frequency Frequency Figure 4 The correct AGC threshold of the U4065B provides optimum reception 7 (23) U4065B Absolute Maximum Ratings Reference point is ground (Pins 2, 8, 14, 20 and 22) Parameters Supply voltage Power dissipation at Tamb = 85°C Junction temperature Ambient temperature range Storage temperature range Electrostatic handling: Human body model (HBM), all I/O pins tested against the supply pins. Symbol VS Ptot Tj Tamb Value 10 470 125 – 30 to + 85 – 50 to + 125 2000 Unit V mW °C °C °C V "V Tstg ESD Thermal Resistance Parameters Thermal resistance Symbol RthJA Maximum 90 Unit K/W Electrical Characteristics VS = 8.0 V, fRF = 98 MHz, fOSC 108.7 MHz, fIF = fOSC – fRF = 10.7 MHz Reference point ground (Pins 2, 8, 14, 20 and 22),Tamb = 25_C, unless otherwise specified Parameters Test Conditions / Pins Symbol Min. Supply voltage Pins 3, 6, 10, 18 and 19 VS 7 Supply current Pins 3+6+10+18+19 Itot Oscillator (GND5 has to be connected to external oscillator components) Rg24 = 220 W, unloaded Q of LOSC = 70, RL1 = 520 W Pin 24 VLOB Pin 23 Oscillator voltage VLOE VLOBUFF 70 Pin 1 Harmonics Pin 1 Output resistance Pin 1 RLO Voltage gain Between pins 1 and 23 Mixer (GND3 has to be separated from GND1, GND2 and GND4) Conversion power gain Source impedance: GC 5 RG15,16 = 200 W 3rd order input intercept IP3 4 Load impedance: Load impedance: Conversion transconductance gC RL18,19 = 200 W 200 Noise figure NFDSB Input resistance to ground Pin 15 Rignd15 Input capacitance to ground f = 100 MHz Cignd15 Input resistance to ground Pin 16 Rignd16 Input capacitance to ground f = 100 MHz Cignd16 Input-input resistance Between Pin 15 and Pin 16 Rii15,16 Input-input capacitance Between Pin 15 and Pin 16 Cii15,16 Output capacitance to GND Pin 18 and Pin 19 Cignd18,19 First IF preamplifier (IF 1) Gain control deviation by I4 Pin 4 17 Gain control slope dGIF1/dI4 8 (23) Typ. 8 37 Max. 10 47 Unit V mA ^ 160 100 90 70 0.9 7 6 8 7 1.2 9 1.6 7 1.6 5 9 20 0.15 mV 220 –15 dBc W 10 14 dB dBm mA/V dB kW pF kW pF kW pF pF dB dB/mA 24 Rev. A3, 15-Oct-98 U4065B Electrical Characteristics (continued) VS = 8.0 V, fRF = 98 MHz, fOSC 108.7 MHz, fIF = fOSC – fRF = 10.7 MHz Reference point ground (Pins 2, 8, 14, 20 and 22),Tamb = 25_C, unless otherwise specified Parameters Test Conditions / Pins Symbol Min. External control current to ground at Gmin I4min at Gnom I4nom at Gmax I4max Power gain at I4min Between pins 21 and 7 Gmin –2.5 11 at I4nom Gnom p Source impedance: 19 at I4max Gmax RG21 = 200 W, Noise figure at Gmax NFmin Load impedance: at Gnom NFnom RL7 = 200 W at Gmin NFmax Temperature coefficient of TKnom the gain at Gnom 1 dB compression at Gnom Pin 7 Vcnom –3 dB cutoff freq. at Gnom Pin 7 fcnom Input resistance Pin 21 RiIF1 270 f = 10 MHz Input capacitance CiIF1 Output resistance Pin 7 RoIF1 270 f = 10 MHz Output capacitance CoIF1 Second IF preamplifier (IF 2) Power gain Between pins 5 and 3 GIF2 15 Source impedance: RG5 = 200 W Load impedance: RL3 =200 W Noise figure NFIF2 1 dB compression Pin 3 Vcomp –3 dB cutoff frequency Pin 3 fc Parallel input resistance Pin 5 RiIF2 270 f = 10 MHz Parallel input capacitance CiIF2 Parallel output resistance Pin 3 RoIF2 Parallel output capacitance f = 10 MHz CoIF2 Voltage regulator Regulated voltage Pin 17 Vref 3.7 Maximum output current Pin 17 Iref 5 Internal differential Pin 17 rd17 resistance, dc17/di17 when I17 = 0 Power supply suppression f = 50 Hz, Pin 17 psrr 36 AGC input voltage thresholds (AGC threshold current is 10 mA at Pin 10) IF2 input Pin 5 VthIF2 85 IF & detector Pin 9 VthIFD 42 Between Pins 15 and 16 Mixer input level of fiRF = 100 MHz wideband sensor V at pin 13 = 0 V VthWB1 95 I through pin 13 = 0 A 85 VthWB2 Rev. A3, 15-Oct-98 Typ. 0 70 140 2 12 22 7 9 15 +0.045 70 50 330 5 330 7 18 Max. Unit ^ mA 2.5 16 28 dB dB dB/K mV MHz 400 400 W W pF pF 19 dB 7 500 50 330 12 50 7 3.9 7 dB mV MHz 400 W pF kW pF 4.9 50 V mA W 50 86 43 92 48 dB dBmV dBmV dBmV dBmV 9 (23) 98 87 100 90 U4065B Test Circuit vo IF 4.7n 4.7n 1 Gain IF 1 0 to 140mA I4 vi IF 50 1 5 21 4.7n vo IF Vs 6 2 I18,19 RG21 IF 1 IF 2 10 50 5 1 2 RL18,19 6 14 2 4.7n RG15,16 1 6 4.7n Interference mixer 8p Rg24 24 Local fosc Cosc 47p Losc 33p 22 RLOBUFF vi IF 6 2 5 1 50 6 2 50 5 RL7 RG5 50 20 7 5 2 5 3 RL3 2 6 1 vo IF I3 Vs V 4 I10 18 19 AGC block 13 I13 R13 Mixer 15 16 Voltage regulator 6 AGC adjust (wide band) Vs I6 1m Vref = 4 V RG9 2 6 4.7n 5 50 vi RF 17 Interference amplifier 9 23 oscillator 5 1 11 RG11 2 6 4.7n 1 50 vo IF 12 8 1 50 vi IF 470p Z/Ohm 1 50 200 2 4 94 8829 vLOBUFF fLOBUFF RL1 5 RF Transformers MCL Type TMO 4 – 1 IL = 0.7 dB 5 0 0 6 10 (23) Rev. A3, 15-Oct-98 U4065B Local Oscillator Rg24 vOSC24 47p 33p Oscillator output buffer 1 vOSC1 , fOSC 24 23 Local oscillator fOSC 520 Tamb Free running oscillator frequency fOSC [ 110 MHz, v OSC24 = 160 mV, Rg24 =220 W, QL = 70 94 9410 180 160 140 vOSC1 ( mV ) 120 100 80 60 40 20 0 –30 94 9411 –10 10 30 50 70 90 Tamb ( °C ) Oscillator swing versus temperature Rev. A3, 15-Oct-98 11 (23) U4065B Mixer fOSC = 110.7 MHz, vOSC24 50 2viRF1 fRF1 2viRF2 fRF2 1 5 ^ 160 mV, f 2 IF = 10.7 MHz 18 2 Mixer 15 19 6 IL2 1 5 50 voIF IL1 14 6 Rg24 47p 22p fOSC 24 23 Local oscillator VS Conversion power gain GC = 20 log (voIF/viRF) + IL1 (dB) + IL2 (dB) IL1, IL2 insertion loss of the RF transformers 120 100 vo IF ( dB mV ) 80 60 40 20 0 0 94 9413 Conversion characteristic 3rd order IM-characteristic 20 40 60 80 100 120 viRF1, viRF2 ( dBmV ) Characteristic of the mixer 12 (23) 94 9412 Tamb Rev. A3, 15-Oct-98 U4065B 8 7 6 GC ( dB ) 5 4 3 2 1 0 –30 94 9414 11.0 10.7 10.4 I18 , I19 ( mA ) 10.1 9.8 9.5 9.2 8.9 8.6 8.3 –10 10 30 50 70 90 94 9415 8.0 –30 –10 10 30 50 70 90 Tamb ( °C ) Tamb ( °C ) Conversion power gain of the mixer stage versus temperature Current of the mixer stage versus temperature 1st IF Preamplifier 1:2 IL1 50 fIF 2viIF 1 5 viIF21 Rg21 = 200 2 6 21 IF 7 voIF7 RL7 = 200 2:1 IL2 2 1 5 voIF 4 Tamb 6 V(PIN4) I4 50 Power gain GIF = 20 log (voIF/viIF) + IL1 (dB) + IL2 (dB) IL1, IL2 = insertion loss of the RF transformers 94 9416 Rev. A3, 15-Oct-98 13 (23) U4065B 25 20 15 10 5 0 –5 0 94 9417 25 T = 90°C GIF1( dB ) 20 15 Gnom 10 5 0 T = 30°C –5 –10 20 40 60 80 100 120 140 94 9418 Gmax GIF1 ( dB ) T = -30°C Gmin 10 20 30 40 50 60 70 80 90 100 I4 (mA ) f ( MHz ) Power gain of the first IF amplifier versus I4 Power gain of the first IF amplifier versus frequency 3.8 3.6 3.4 3.2 V4 ( V ) 3.0 2.8 2.6 2.4 2.2 2 0 94 9419 T = 90°C T = –30°C T = 30°C 20 40 60 80 100 120 140 I4 ( m A ) V (Pin 4) versus I4 14 (23) Rev. A3, 15-Oct-98 U4065B 2nd IF Preamplifier VS 330 1:2 IL1 50 fIF 2viIF 1 5 viIF5 Rg5 = 200 2 6 Tamb 5 IF 3 voIF3 RL3 = 200 2 2:1 IL2 1 5 50 voIF Power gain GIF = 20 log (voIF/viIF) + IL1 (dB) + IL2 (dB) IL1; IL2 = insertion loss of the RF transformers 18.5 18.0 17.5 GIF2 ( dB ) GIF2 ( dB ) 17.0 16.5 16.0 15.5 15 –30–20–10 0 10 20 30 40 50 60 70 80 90 94 9421 Tamb ( °C ) Power gain of the second IF amplifier versus temperature Rev. A3, 15-Oct-98 ÎÎÎ 20 18 16 14 12 10 8 6 4 2 0 10 94 9422 6 94 9420 20 30 40 50 60 70 80 90 100 f ( MHz ) Power gain of the second IF amplifier versus frequency 15 (23) U4065B 87.0 86.8 Threshold ( dBmV ) 86.6 I10 ( m A ) 10.00 I10 (–30°C ) / mA 10000.00 1000.00 100.00 86.4 86.2 86.0 –30 1.00 0.10 0.01 I10 (30°C ) / mA I10 (90°C ) / mA –10 10 30 50 70 90 94 9424 80 85 90 95 100 105 94 9423 Tamb ( °C ) viIF ( dBmA ) AGC threshold (I10 = 1 mA) of the second IF amplifier versus temperature AGC characteristic of the second IF amplifier input Interference Sensor (Mixer) 50 2viRF1 fiRF1 2viRF2 fiRF2 1 5 IL1 2 Rg15/16 =200 6 15 Interference 16 mixer 11 RL11 = 200 IL2 2 6 fLO Local oscillator VS IL1=IL2=0.7dB 94 9425 1 5 50 voIF fIF Test conditions for characteristic voIF versus viRF1: fLO = 100 MHz, fRF1 = 89.3 MHz, viRF2 = 0, fIF = fLO – fRF1 = 10.7 MHz Test conditions for 3rd order IM-characteristic voIF versus viRF1, viRF2: fLO = 100 MHz. fRF1 =89.4 MHz, fRF2 = 89.5 MHz, fIF = fLO – (2 fRF1 –1 fRF2) = 10.7 MHz IL1, IL2 = insertion loss of the RF transformer 16 (23) Rev. A3, 15-Oct-98 U4065B 90 80 70 60 vo IF ( dB mV ) 50 40 30 20 10 0 60 94 9426 100 90 80 vo IF ( dB mV ) 70 60 50 40 30 20 65 70 75 80 85 90 95 100 94 9428 Conversion characteristic 3rd order IM-characteristic –30°C 30°C 90°C 70 75 80 85 90 95 100 105 110 115 viRF ( dBmV ) viRF ( dBmV ) Characteristic of the interference sensor (mixer) Conversion characteristic of the interference sensor (mixer) 80 70 60 vo IF ( dB mV ) 50 40 30 20 70 94 9427 –30°C 30°C 90°C 75 80 85 90 95 100 105 110 115 viRF1, viRF2 ( dBmV ) Third order interference characteristic of the interference sensor (mixer) Interference Sensor (Amplifier) 1:2 IL1 50 fIF 2viIF 1 5 viIF9 9 IF 10 I10 VS Rg9 = 200 2 6 IL1=0.7dB Tamb 94 9429 Rev. A3, 15-Oct-98 17 (23) U4065B AGC Thresholds 45.0 44.5 44.0 Threshold ( dBmV ) viRF ( dB mV ) 43.5 43.0 42.5 42.0 41.5 41.0 –30–20–10 0 10 20 30 40 50 60 70 80 90 94 9430 105 100 95 88 MHz 90 98 MHz 108 MHz 85 0 5 10 15 20 25 30 35 40 45 50 55 I13 ( mA ) Tamb ( °C ) 94 9433 AGC threshold of the interference IF amplifier versus temperature 100 98 96 94 viRF 15/16 92 90 88 86 84 82 80 –30–20–10 0 10 20 30 40 50 60 70 80 90 94 9432 Wideband AGC threshold (I10 = 1 mA) versus I13 U13 = 0 V I13 = 30 mA I13 = 0 A Tamb ( °C ) Wideband AGC threshold (I10 = 1 mA) versus temperature 18 (23) Rev. A3, 15-Oct-98 U4065B AGC Characteristics 10000.00 1000.00 100.00 I10 (m A ) 10.00 1.00 0.10 0.01 35 94 9431 10000.00 1000.00 100.00 I 10 ( m A ) 10.00 1.00 0.10 0.01 45 55 65 75 85 95 94 9435 –30°C 30°C 90°C –30°C 30°C 90°C 80 85 90 95 100 105 110 115 120 viIF ( dBmV ) viRF ( dBmV ) AGC characteristic of the interference IF & detector block 10000.00 1000.00 100.00 I10 ( m A ) 10.00 1.00 0.10 0.01 90 94 9434 Characteristic of the wideband AGC (I13 = 0 V) –30°C 30°C 90°C 95 100 105 110 115 120 viRF ( dBmV ) Characteristic of the wideband AGC (V13 = 0 V) Rev. A3, 15-Oct-98 19 (23) U4065B DC Characteristics 18 16 I6 14 12 Vref ( V ) 9.0 9.5 10.0 I ( mA ) 10 8 6 4 2 0 6 94 9436 3.88 3.87 3.86 3.85 3.84 3.83 I3 6.5 7.0 7.5 8.0 8.5 3.82 3.81 –30–20–10 0 10 20 30 40 50 60 70 80 90 94 9438 I18, I19 VS ( V ) Tamb ( °C ) Supply currents versus supply voltage 40 35 30 25 20 15 10 5 0 –30 94 9437 Reference voltage versus temperature 4.00 I3 + I6 + I18 + I19 3.95 3.90 I6 I18, I19 3.80 I3 3.75 –10 94 9439 V (V) ref 10 30 50 70 90 I ( mA ) 3.85 –10 –8 –6 –4 –2 0 2 Tamb ( °C ) I17 ( mA ) Supply currents versus temperature Reference voltage versus I17 20 (23) Rev. A3, 15-Oct-98 Rev. A3, 15-Oct-98 Application diagram 21 (23) C2 1n D1 S392D C3 C1 2p7 D2 R1 S391D 94 9440 R10 (Tracking adj.) 1.5k appr. 8mA 1n C7 L2 2.2uH R4 470 R6 47k C8 R5 22 10p 1p5 C10 13 D4 L4 R7 56k C12 18p R11 56k 1n C13 R13 120k R14 160k R16 15 1 IF 2 C18 3 100p C17 150n 4.7p C26 22p 47p 24 6 L5 4 R19 10k C21 1n R17 470 820 CF3 D5 L6 OSC C14 C16 1n 6.8p C20 C23 C22 6.8p Q1 BFR93A 3 R3 C5 10n 56k D3 1 6 4 L3 C11 10n U4065B 12 CF1 CF2 R15 R18 330 C19 22n C15 100n CF4 C24 1n Gain adj. 100k R21 R20 22k 1 22 R2 100 10n L1 220nH C25 27p C6 1n VTUN 1.7–6.5V 470n C9 Vs=8.5V C4 1n Q2 BC858 R12 330k 22 R9 220 U4065B ANT 75 OHM VAGC IF OUT LO OUT U4065B Part List Item Q1 Q2 D1 D2 D3, 4, 5 L1 L2 L3 Description BFR93AR (BFR93A) BC858 S392D S391D BB804 11 turns, 0.35 mm wire, 3 mm diameter (approx. 220 nH) 2.2 mH (high Q type) TOKO 7KL–type # 600ENF-7251x CF1 CF2, 3, 4 L5 L6 Item L4 Description TOKO 7KL–type # 291ENS 2341IB TOKO 7KL–type # M600BCS-1397N TOKO 7KL–type # 291ENS 2054IB TOKO type SKM 2 (230 KHZ) TOKO type SKM 3 (180 KHZ) Ordering and Package Information Extended type number U4065B-AFL U4065B-AFLG3 SO 24 plastic SO 24 plastic Taping according ICE-286-3 Package Remarks Dimensions in mm Package SO24 Dimensions in mm 15.55 15.30 9.15 8.65 7.5 7.3 2.35 0.25 0.10 13.97 24 13 0.25 10.50 10.20 0.4 1.27 technical drawings according to DIN specifications 13037 1 12 22 (23) Rev. A3, 15-Oct-98 U4065B Ozone Depleting Substances Policy Statement It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2594, Fax number: 49 ( 0 ) 7131 67 2423 Rev. A3, 15-Oct-98 23 (23)
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