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71M6531D

71M6531D

  • 厂商:

    TERIDIAN

  • 封装:

  • 描述:

    71M6531D - Energy Meter IC - Teridian Semiconductor Corporation

  • 数据手册
  • 价格&库存
71M6531D 数据手册
71M6531D/F, 71M6532D/F Energy Meter IC Simplifying System IntegrationTM DATA SHEET June 2010 GENERAL DESCRIPTION The Teridian 71M6531D/F and 71M6532D/F are highly integrated SOCs with an MPU core, RTC, FLASH and LCD driver. Teridian’s patented Single Converter Technology® with a 22-bit delta-sigma ADC, four analog inputs, digital temperature compensation, precision voltage reference, battery voltage monitor and 32-bit computation engine (CE) supports a wide range of residential metering applications with very few low-cost external components. A 32-kHz crystal time base for the entire system and internal battery backup support for RAM and RTC further reduce system cost. The IC supports 2-wire, and 3-wire single-phase and dual-phase residential metering along with tamper-detection mechanisms. The 71M6531D/F offers single-ended inputs for two current channels and two single-ended voltage inputs. The 71M6532D/F has two differential current inputs and three single-ended voltage inputs. 2 Maximum design flexibility is provided by multiple UARTs, I C, μWire, up to 21 DIO pins and in-system programmable FLASH memory, which can be updated with data or application code in operation. FEATURES • Wh accuracy < 0.1% over 2000:1 current range • Exceeds IEC62053/ANSI C12.20 standards • Four sensor inputs • Low-jitter Wh and VARh plus two additional pulse test outputs (4 total, 10 kHz maximum) with pulse count • Four-quadrant metering • Tamper detection (Neutral current with CT, Rogowski or shunt, magnetic tamper input) • Line frequency count for RTC • Digital temperature compensation • Sag detection for phase A and B • Independent 32-bit compute engine • 46-64 Hz line frequency range with same calibration. Phase compensation (± 7°) • Three battery modes with wake-up on timer or push-button: Brownout mode (52 µA typ.) LCD mode (21 µA typ., DAC active) Sleep mode (0.7 µA typ.) • Energy display during mains power failure • 39 mW typical consumption @ 3.3 V, MPU clock frequency 614 kHz • 22-bit delta-sigma ADC with 3360 Hz or 2520 Hz sample rate • 8-bit MPU (80515),1 clock cycle per instruction, 10 MHz maximum, with integrated ICE for debug • RTC for TOU functions with clock-rate adjust register • Hardware watchdog timer, power fail monitor • LCD driver with 4 common segment drivers: Up to 156 (71M6531D/F) or 268 pixels (71M6532D/F) • Up to 22 (71M6531D/F) or 43 (71M6532D/F) general-purpose I/O pins. Digital I/O pins compatible with 5 V inputs • 32 kHz time base • High-speed slave SPI interface to data RAM • Two UARTs for IR and AMR, IR driver with modulation • FLASH memory with security and in-system program update: 128 KB (71M6531D/32D) 256 KB (71M6531F/32F) • 4 KB MPU XRAM • Industrial temperature range • 68-pin QFN package for 71M6531D/F pincompatible with 71M6521, 100-pin LQFP package for 71M6532D/F, lead free 1 A complete array of ICE and development tools, programming libraries and reference designs enable rapid development and certification of TOU, AMR and Prepay meters that comply with worldwide electricity metering standards. A CT/SHUNT LOAD NEUTRAL CT LOAD POWER SUPPLY B ADC IAP* IAN* VA IBP* IBN* VB V3.3A V3.3 SYS GNDA GNDD PWR MODE CONTROL WAKE-UP REGULATOR VBAT V2.5 BATTERY TERIDIAN 71M6531 71M6532 TEMP SENSOR VOLTAGE REF VREF VBIAS SERIAL PORTS LCD & DIO COM0..3 RAM FLASH MEMORY COMPUTE ENGINE LCD SEG SEG/DIO 88. 88. 8888 I2C or µWire EEPROM TEST PULSES AMR TX RX RX/DIO1 IR POWER FAULT 32 kHz TX/DIO2 SENSE DRIVE/MOD COMPARATOR V1 OSC/PLL XIN XOUT * MPU TIMERS RTC ICE I/F ICE_E 02/18/2009 SPI SPI HOST V3P3D GNDD Differential pins only on 6532D/F v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 Table of Contents 1 Hardware Description ....................................................................................................................... 10 1.1 Hardware Overview ................................................................................................................... 10 1.2 Analog Front End (AFE)............................................................................................................. 10 1.2.1 Signal Input Pins ............................................................................................................ 10 1.2.2 Input Multiplexer ............................................................................................................ 11 1.2.3 A/D Converter (ADC) ..................................................................................................... 12 1.2.4 FIR Filter ........................................................................................................................ 12 1.2.5 Voltage References ....................................................................................................... 12 1.2.6 Temperature Sensor ...................................................................................................... 14 1.2.7 Battery Monitor............................................................................................................... 14 1.2.8 AFE Functional Description ........................................................................................... 14 1.2.9 Digital Computation Engine (CE) ................................................................................... 15 1.2.10 Meter Equations ............................................................................................................. 16 1.2.11 Real-Time Monitor ......................................................................................................... 16 1.2.12 Pulse Generators ........................................................................................................... 16 1.2.13 Data RAM (XRAM) ........................................................................................................ 17 1.2.14 Delay Compensation ..................................................................................................... 17 1.2.15 CE Functional Overview ................................................................................................ 17 1.3 80515 MPU Core ....................................................................................................................... 19 1.3.1 Memory Organization and Addressing .......................................................................... 19 1.3.2 Special Function Registers (SFRs) ............................................................................... 21 1.3.3 Generic 80515 Special Function Registers ................................................................... 22 1.3.4 Special Function Registers (SFRs) Specific to the 71M6531D/F and 71M6532D/F ..... 24 1.3.5 Instruction Set ................................................................................................................ 26 1.3.6 UARTs ........................................................................................................................... 26 1.3.7 Timers and Counters ..................................................................................................... 28 1.3.8 WD Timer (Software Watchdog Timer) ......................................................................... 30 1.3.9 Interrupts ........................................................................................................................ 30 1.4 On-Chip Resources ................................................................................................................... 36 1.4.1 Oscillator ........................................................................................................................ 36 1.4.2 Internal Clocks ............................................................................................................... 36 1.4.3 Real-Time Clock (RTC) ................................................................................................. 37 1.4.4 Temperature Sensor ...................................................................................................... 38 1.4.5 Physical Memory............................................................................................................ 38 1.4.6 Optical Interface ............................................................................................................. 40 1.4.7 Digital I/O – 71M6531D/F .............................................................................................. 41 1.4.8 Digital I/O – 71M6532D/F .............................................................................................. 43 1.4.9 Digital IO – Common Characteristics for 71M6531D/F and 71M6532D/F .................... 44 1.4.10 LCD Drivers – 71M6531D/F .......................................................................................... 45 1.4.11 LCD Drivers – 71M6532D/F .......................................................................................... 46 1.4.12 LCD Drivers – Common Characteristics for 71M6531D/F and 71M6532D/F ............... 46 1.4.13 Battery Monitor............................................................................................................... 46 1.4.14 EEPROM Interface ........................................................................................................ 46 1.4.15 SPI Slave Port................................................................................................................ 49 1.4.16 Hardware Watchdog Timer ............................................................................................ 52 1.4.17 Test Ports (TMUXOUT pin) ........................................................................................... 53 2 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 2 Data Sheet 71M6531D/F-71M6532D/F 3 4 Functional Description ..................................................................................................................... 54 2.1 Theory of Operation ................................................................................................................... 54 2.2 System Timing Summary ........................................................................................................... 55 2.3 Battery Modes ............................................................................................................................ 56 2.3.1 BROWNOUT Mode ....................................................................................................... 57 2.3.2 LCD Mode ...................................................................................................................... 58 2.3.3 SLEEP Mode ................................................................................................................. 58 2.4 Fault and Reset Behavior .......................................................................................................... 60 2.4.1 Reset Mode.................................................................................................................... 60 2.4.2 Power Fault Circuit ........................................................................................................ 60 2.5 Wake-Up Behavior ..................................................................................................................... 61 2.5.1 Wake on PB ................................................................................................................... 61 2.5.2 Wake on Timer............................................................................................................... 61 2.6 Data Flow ................................................................................................................................... 61 2.7 CE/MPU Communication ........................................................................................................... 62 Application Information.................................................................................................................... 63 3.1 Connection of Sensors............................................................................................................... 63 3.2 Connecting 5-V Devices ............................................................................................................ 63 3.3 Temperature Measurement ....................................................................................................... 64 3.4 Temperature Compensation ...................................................................................................... 64 3.4.1 Temperature Coefficients: ............................................................................................. 64 3.4.2 Temperature Compensation for VREF .......................................................................... 65 3.4.3 System Temperature Compensation ............................................................................. 65 3.4.4 Temperature Compensation for the RTC ...................................................................... 65 3.5 Connecting LCDs ....................................................................................................................... 66 3.6 Connecting I2C EEPROMs ........................................................................................................ 66 3.7 Connecting Three-Wire EEPROMs ........................................................................................... 67 3.8 UART0 (TX/RX) ......................................................................................................................... 67 3.9 Optical Interface (UART1).......................................................................................................... 67 3.10 Connecting the V1 Pin ............................................................................................................... 68 3.11 Connecting the Reset Pin .......................................................................................................... 69 3.12 Connecting the Emulator Port Pins............................................................................................ 69 3.13 Connecting a Battery ................................................................................................................. 69 3.14 Flash Programming.................................................................................................................... 70 3.15 MPU Firmware ........................................................................................................................... 70 3.16 Crystal Oscillator ........................................................................................................................ 70 3.17 Meter Calibration ........................................................................................................................ 71 Firmware Interface ............................................................................................................................ 72 4.1 I/O RAM and SFR Map – Functional Order ............................................................................... 72 4.2 I/O RAM Description – Alphabetical Order ................................................................................ 77 4.3 CE Interface Description ............................................................................................................ 88 4.3.1 CE Program ................................................................................................................... 88 4.3.2 CE Data Format ............................................................................................................. 88 4.3.3 Constants ....................................................................................................................... 88 4.3.4 Environment ................................................................................................................... 88 4.3.5 CE Calculations ............................................................................................................. 89 4.3.6 CE Status and Control ................................................................................................... 89 4.3.7 CE Transfer Variables ................................................................................................... 92 4.3.8 Pulse Generation ........................................................................................................... 93 4.3.9 CE Calibration Parameters ............................................................................................ 94 © 2005-2010 TERIDIAN Semiconductor Corporation 3 v1.3 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 4.3.10 Other CE Parameters .................................................................................................... 95 4.3.11 CE Flow Diagrams ......................................................................................................... 95 5 Electrical Specifications................................................................................................................... 98 5.1 Absolute Maximum Ratings ....................................................................................................... 98 5.2 Recommended External Components ....................................................................................... 99 5.3 Recommended Operating Conditions........................................................................................ 99 5.4 Performance Specifications ..................................................................................................... 100 5.4.1 Input Logic Levels ........................................................................................................ 100 5.4.2 Output Logic Levels ..................................................................................................... 100 5.4.3 Power-Fault Comparator ............................................................................................. 100 5.4.4 Battery Monitor............................................................................................................. 100 5.4.5 Supply Current ............................................................................................................. 101 5.4.6 V3P3D Switch .............................................................................................................. 101 5.4.7 2.5 V Voltage Regulator............................................................................................... 101 5.4.8 Low-Power Voltage Regulator ..................................................................................... 101 5.4.9 Crystal Oscillator .......................................................................................................... 102 5.4.10 LCD DAC ..................................................................................................................... 102 5.4.11 LCD Drivers ................................................................................................................. 102 5.4.12 Optical Interface ........................................................................................................... 102 5.4.13 Temperature Sensor .................................................................................................... 103 5.4.14 VREF ........................................................................................................................... 103 5.4.15 ADC Converter, V3P3A Referenced ........................................................................... 104 5.5 Timing Specifications ............................................................................................................... 105 5.5.1 Flash Memory .............................................................................................................. 105 5.5.2 EEPROM Interface ...................................................................................................... 105 5.5.3 RESET ......................................................................................................................... 105 5.5.4 RTC.............................................................................................................................. 105 5.5.5 SPI Slave Port (MISSION Mode) ................................................................................. 106 5.6 Typical Performance Data ....................................................................................................... 107 5.6.1 Accuracy over Current ................................................................................................. 107 5.6.2 Accuracy over Temperature ........................................................................................ 107 5.7 71M6531D/F Package ............................................................................................................. 108 5.7.1 Package Outline .......................................................................................................... 108 5.7.2 71M6531D/F Pinout (QFN-68)..................................................................................... 109 5.7.3 Recommended PCB Land Pattern for the QFN-68 Package ...................................... 110 5.8 71M6532D/F Package ............................................................................................................. 111 5.8.1 71M6532D/F Pinout (LQFP-100) ................................................................................. 111 5.8.2 LQFP-100 Mechanical Drawing ................................................................................... 112 5.9 Pin Descriptions ....................................................................................................................... 113 5.9.1 Power and Ground Pins............................................................................................... 113 5.9.2 Analog Pins .................................................................................................................. 113 5.9.3 Digital Pins ................................................................................................................... 114 5.9.4 I/O Equivalent Circuits ................................................................................................. 115 6 Ordering Information ...................................................................................................................... 116 7 Related Information ........................................................................................................................ 116 8 Contact Information ........................................................................................................................ 116 Appendix A: Acronyms .......................................................................................................................... 117 Appendix B: Revision History ............................................................................................................... 118 4 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F Figures Figure 1: 71M6531D/F IC Functional Block Diagram ................................................................................... 8 Figure 2: 71M6532D/F IC Functional Block Diagram ................................................................................... 9 Figure 3: General Topology of a Chopped Amplifier .................................................................................. 13 Figure 4: CROSS Signal with CHOP_E[1:0] = 00 ....................................................................................... 13 Figure 5: AFE Block Diagram (Shown for the 71M6532D/F) ...................................................................... 14 Figure 6: Samples from Multiplexer Cycle .................................................................................................. 18 Figure 7: Accumulation Interval .................................................................................................................. 18 Figure 8: Interrupt Structure ........................................................................................................................ 35 Figure 9: Optical Interface ........................................................................................................................... 41 Figure 10: Connecting an External Load to DIO Pins ................................................................................. 45 Figure 11: 3-Wire Interface. Write Command, HiZ=0 ................................................................................ 48 Figure 12: 3-Wire Interface. Write Command, HiZ=1 ................................................................................ 48 Figure 13: 3-Wire Interface. Read Command. ........................................................................................... 49 Figure 14: 3-Wire Interface. Write Command when CNT=0 ...................................................................... 49 Figure 15: 3-Wire Interface. Write Command when HiZ=1 and WFR=1 ................................................... 49 Figure 16: SPI Slave Port: Typical Read and Write operations .................................................................. 51 Figure 17: Functions defined by V1 ............................................................................................................ 52 Figure 18: Voltage, Current, Momentary and Accumulated Energy ........................................................... 54 Figure 19: Timing Relationship between ADC MUX, Compute Engine ...................................................... 55 Figure 20: RTM Output Format ................................................................................................................... 55 Figure 21: Operation Modes State Diagram ............................................................................................... 56 Figure 22: Transition from BROWNOUT to MISSION Mode when System Power Returns ...................... 59 Figure 23: Power-Up Timing with V3P3SYS and VBAT tied together ........................................................ 59 Figure 24: Power-Up Timing with VBAT only.............................................................................................. 60 Figure 25: Wake Up Timing ........................................................................................................................ 61 Figure 26: MPU/CE Data Flow .................................................................................................................... 62 Figure 27: MPU/CE Communication ........................................................................................................... 62 Figure 28: Resistive Voltage Divider ........................................................................................................... 63 Figure 29: CT with Single Ended (Left) and Differential Input (Right) Connection ..................................... 63 Figure 30: Resistive Shunt (Left) and Rogowski Sensor (Right) Connection ............................................. 63 Figure 31: Connecting LCDs ....................................................................................................................... 66 Figure 32: I2C EEPROM Connection .......................................................................................................... 66 Figure 33: Three-Wire EEPROM Connection ............................................................................................. 67 Figure 34: Connections for UART0 ............................................................................................................. 67 Figure 35: Connection for Optical Components .......................................................................................... 68 Figure 36: Voltage Divider for V1 ................................................................................................................ 68 Figure 37: External Components for the RESET Pin: Push-button (Left), Production Circuit (Right) ........ 69 Figure 38: External Components for the Emulator Interface ...................................................................... 69 Figure 39: Connecting a Battery ................................................................................................................. 70 Figure 40: CE Data Flow: Multiplexer and ADC.......................................................................................... 96 Figure 41: CE Data Flow: Scaling, Gain Control, Intermediate Variables .................................................. 96 Figure 42: CE Data Flow: Squaring and Summation Stages...................................................................... 97 Figure 43: SPI Slave Port (MISSION Mode) Timing ................................................................................. 106 Figure 44: Wh Accuracy, 0.1 A to 200 A at 240 V/50 Hz and Room Temperature .................................. 107 Figure 45: QFN-68 Package Outline, Top and Side View ........................................................................ 108 Figure 46: QFN-68 Package Outline, Bottom View .................................................................................. 108 Figure 47: Pinout for QFN-68 Package..................................................................................................... 109 Figure 48: PCB Land Pattern for QFN 68 Package .................................................................................. 110 Figure 49: PCB Land Pattern for LQFP-100 Package .............................................................................. 111 Figure 50: LQFP-100 Package, Mechanical Drawing............................................................................... 112 Figure 51: I/O Equivalent Circuits ............................................................................................................. 115 v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 5 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 Tables Table 1: Inputs Selected in Regular and Alternate Multiplexer Cycles ....................................................... 11 Table 2: ADC Resolution............................................................................................................................. 12 Table 3: ADC RAM Locations ..................................................................................................................... 12 Table 4: XRAM Locations for ADC Results ................................................................................................ 15 Table 5: Meter Equations ............................................................................................................................ 16 Table 6: CKMPU Clock Frequencies .......................................................................................................... 19 Table 7: Memory Map ................................................................................................................................. 20 Table 8: Internal Data Memory Map ........................................................................................................... 21 Table 9: Special Function Register Map ..................................................................................................... 21 Table 10: Generic 80515 SFRs - Location and Reset Values .................................................................... 22 Table 11: PSW Bit Functions (SFR 0xD0) ..................................................................................................... 23 Table 12: Port Registers ............................................................................................................................. 24 Table 13: Stretch Memory Cycle Width ...................................................................................................... 24 Table 14: 71M6531D/F and 71M6532D/F Specific SFRs........................................................................... 24 Table 15: Baud Rate Generation ................................................................................................................ 26 Table 16: UART Modes............................................................................................................................... 26 Table 17: The S0CON (UART0) Register (SFR 0x98) ................................................................................. 27 Table 18: The S1CON (UART1) register (SFR 0x9B) .................................................................................. 27 Table 19: PCON Register Bit Description (SFR 0x87) ................................................................................ 28 Table 20: Timers/Counters Mode Description ............................................................................................ 28 Table 21: Allowed Timer/Counter Mode Combinations .............................................................................. 29 Table 22: TMOD Register Bit Description (SFR 0x89) ................................................................................ 29 Table 23: The TCON Register Bit Functions (SFR 0x88)............................................................................ 29 Table 24: The IEN0 Bit Functions (SFR 0xA8)............................................................................................ 30 Table 25: The IEN1 Bit Functions (SFR 0xB8)............................................................................................ 31 Table 26: The IEN2 Bit Functions (SFR 0x9A)............................................................................................ 31 Table 27: TCON Bit Functions (SFR 0x88) ................................................................................................. 31 Table 28: The T2CON Bit Functions (SFR 0xC8) ........................................................................................ 31 Table 29: The IRCON Bit Functions (SFR 0xC0) ........................................................................................ 31 Table 30: External MPU Interrupts .............................................................................................................. 32 Table 31: Interrupt Enable and Flag Bits .................................................................................................... 32 Table 32: Interrupt Priority Level Groups .................................................................................................... 33 Table 33: Interrupt Priority Levels ............................................................................................................... 33 Table 34: Interrupt Priority Registers (IP0 and IP1) .................................................................................... 34 Table 35: Interrupt Polling Sequence.......................................................................................................... 34 Table 36: Interrupt Vectors.......................................................................................................................... 34 Table 37: Clock System Summary .............................................................................................................. 36 Table 38: Bank Switching with FL_BANK[2:0] ............................................................................................ 40 Table 39: Data/Direction Registers and Internal Resources for DIO 1-15 (71M6531D/F) ......................... 42 Table 40: Data/Direction Registers and Internal Resources for DIO 17-29 (71M6531D/F) ....................... 42 Table 41: Data/Direction Registers and Internal Resources for DIO 43-46 (71M6531D/F) ....................... 42 Table 42: Data/Direction Registers and Internal Resources for DIO 1-15 (71M6532D/F) ......................... 43 Table 43: Data/Direction Registers and Internal Resources for DIO 16-30 (71M6532D/F) ....................... 43 Table 44: Data/Direction Registers and Internal Resources for DIO 40-51 (71M6532D/F) ....................... 44 Table 45: DIO_DIR Control Bit .................................................................................................................... 44 Table 46: Selectable Control using DIO_DIR Bits ......................................................................................... 44 Table 47: EECTRL Bits for 2-pin Interface ................................................................................................... 47 Table 48: EECTRL Bits for the 3-Wire Interface .......................................................................................... 48 Table 49: SPI Command Description.......................................................................................................... 50 Table 50: I/O RAM Registers Accessible via SPI ....................................................................................... 50 Table 51: TMUX[4:0] Selections ................................................................................................................. 53 Table 52: Available Circuit Functions.......................................................................................................... 57 6 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F Table 53: I/O RAM Map in Functional Order............................................................................................... 72 Table 54: I/O RAM Description - Alphabetical ............................................................................................ 77 Table 55: CE EQU[2:0] Equations and Element Input Mapping ................................................................. 89 Table 56: CESTATUS (CE RAM 0x80) Bit Definitions .................................................................................. 90 Table 57: CECONFIG Bit Definitions ........................................................................................................... 91 Table 58: Sag Threshold Control ................................................................................................................ 91 Table 59: Gain Adjust Control ..................................................................................................................... 91 Table 60: CE Transfer Variables ................................................................................................................. 92 Table 61: CE Energy Measurement Variables............................................................................................ 92 Table 62: Useful CE Measurement Parameters ......................................................................................... 93 Table 63: CE Pulse Generation Parameters............................................................................................... 94 Table 64: CE Calibration Parameters ......................................................................................................... 94 Table 65: CE Parameters for Noise Suppression and Code Version ......................................................... 95 Table 66: Absolute Maximum Ratings ........................................................................................................ 98 Table 67: Recommended External Components ........................................................................................ 99 Table 68: Recommended Operating Conditions ......................................................................................... 99 Table 69: Input Logic Levels ..................................................................................................................... 100 Table 70: Output Logic Levels .................................................................................................................. 100 Table 71: Power-Fault Comparator Performance Specifications............................................................. 100 Table 72: Battery Monitor Performance Specifications (BME= 1) ............................................................. 100 Table 73: Supply Current Performance Specifications ............................................................................. 101 Table 74: V3P3D Switch Performance Specifications .............................................................................. 101 Table 75: 2.5 V Voltage Regulator Performance Specifications ............................................................... 101 Table 76: Low-Power Voltage Regulator Performance Specifications ..................................................... 101 Table 77: Crystal Oscillator Performance Specifications .......................................................................... 102 Table 78: LCD DAC Performance Specifications ..................................................................................... 102 Table 79: LCD Driver Performance Specifications ................................................................................... 102 Table 80: Optical Interface Performance Specifications ........................................................................... 102 Table 81: Temperature Sensor Performance Specifications .................................................................... 103 Table 82: VREF Performance Specifications............................................................................................ 103 Table 83: ADC Converter Performance Specifications ............................................................................. 104 Table 84: Flash Memory Timing Specifications ........................................................................................ 105 Table 85: EEPROM Interface Timing........................................................................................................ 105 Table 86: RESET Timing .......................................................................................................................... 105 Table 87: SPI Slave Port (MISSION Mode) Timing .................................................................................. 106 Table 88: Recommended PCB Land Pattern Dimensions........................................................................ 110 Table 89: Power and Ground Pins ............................................................................................................ 113 Table 90: Analog Pins ............................................................................................................................... 113 Table 91: Digital Pins ................................................................................................................................ 114 v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 7 Data Sheet 71M6531D/F-71M6532D/F VREF GNDD GNDA V3P3A V3P3SYS FDS 6531/6532 005 ∆Σ ADC CONVERTER VBIAS VADC VBIAS FIR FIR_LEN 22 CE RTM PLS_INV PLS_INTERVAL PLS_MAXWIDTH CE_LCTN EQU PRE_SAMPS SUM_CYCLES RTM_0..3 RTM_E CE_E CE_PROG 16 MCK PLL CK_CE FLASH 128KB/ 256KB to TMUX RPULSE WPULSE XPULSE YPULSE YPULSE XPULSE WPULSE RPULSE V3P3D VBAT VOLT REG LCD_ONLY SLEEP IA VA MUX VREF VREF_CAL VREF_DIS IB VB ADC_E VREF V2P5 2.5V to logic 2.5V_NV VBAT EQU MUX_ALT MUX_DIV 2.5V_NV RTCLK (32KHz) 32 CE_DATA XRAM 4kB XIN XOUT OSC (32KHz) RTCA_ADJ CK_MPU CKOUT_E DIO_PV DIO_PW DIO_PX DIO_PY DIO46/SEG66 DIO45/SEG65 DIO44/SEG64 DIO43/SEG63 DIO29/SEG49 DIO28/SEG48 DIO17/SEG37 DIO15/SEG35 DIO14/SEG34 DIO13/SEG33 DIO12/SEG32 DIO11/SEG31 DIO10/SEG30 CKTEST 2.5V_NV RTC RST_SUBSEC QREG PREG RTC_DAY RTC_HR RTC_DATE RTC_MIN RTC_MO RTC_SEC RTC_YR CKOUT_E MULTIPURPOSE IO TEMP SENSOR XRAM BUS 8 LCD DISPLAY DRIVER LCD_DAC LCD_MODE COM0..3 LCD_CLK LCD_E 4 LCD_BLKMAP LCD_SEG SEG... LCD_Y DIGITAL I/O DIO_DIR DIO_R DIO SPI SLAVE TEST TEST MODE MPU 4 COM0...3 DIO9/SEG29/YPULSE DIO8/SEG28/XPULSE DIO7/SEG27/RPULSE DIO6/SEG26/WPULSE DIO5/SEG25/SDATA DIO4/SEG24/SDCK SEG19/CKTEST SEG18 SEG17 SEG16 SEG15 SEG14 SEG13 SEG12 SEG11/E_RST SEG10/E_TCLK SEG9/E_RXTX SEG8 SEG7/MUX_SYNC SEG6/PSDI SEG5/PCSZ SEG4/PSDO SEG3/PCLK SEG2 SEG1 SEG0 DIO2/OPT_TX/WPULSE/RPULSE DIO1/OPT_RX RX UART1 DIO... TX PB PB 8 PCMD EEPROM EEDATA EECTRL PCSZ PCLK PSI PSO SDATA SCLK SPE DIO_EEX UART2--OPTICAL OPT_TX OPT_RXDIS OPT_RXINV OPT_RX OPT_TXE OPT_TXINV OPT_TXMOD OPT_FDC NVRAM GP0-GP7 EMULATOR (ICE) IRAM BUS 8 E_RXTX E_TCLK E_RSTZ 2.5V_NV OPT_TXE MUX_SYNC_E V1 POWER FAULT FAULTZ IRAM 256B ICE_E TEST MUX TMUX[4:0] TMUXOUT RESET ICE_E 05/26/2010 Figure 1: 71M6531D/F IC Functional Block Diagram 8 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 VREF GNDD GNDA Data Sheet 71M6531D/F-71M6532D/F V3P3A V3P3SYS ∆Σ ADC CONVERTER VBIAS VBIAS FIR FIR_LEN 22 CE RTM PLS_INV PLS_INTERVAL PLS_MAXWIDTH CE_LCTN EQU PRE_SAMPS SUM_CYCLES RTM_0..3 RTM_E CE_E CE_PROG 16 MCK PLL CK_CE FLASH 128KB/ 256KB to TMUX RPULSE WPULSE XPULSE YPULSE YPULSE XPULSE WPULSE RPULSE V3P3D VBAT VOLT REG LCD_ONLY SLEEP IAP IAN VA IBP IBN VB VBAT EQU MUX_ALT MUX_DIV 2.5V_NV MUX VADC VREF VREF_CAL VREF_DIS ADC_E VREF V2P5 2.5V to logic 2.5V_NV 32 CE_DATA XRAM 4kB RTCLK (32KHz) XIN XOUT OSC (32KHz) RTCA_ADJ CK_MPU CKOUT_E DIO_PV DIO_PW DIO_PX DIO_PY 5 6 CKTEST 2.5V_NV RTC RST_SUBSEC QREG PREG RTC_DAY RTC_HR RTC_DATE RTC_MIN RTC_MO RTC_SEC RTC_YR CKOUT_E MULTIPURPOSE IO 18 TEMP SENSOR XRAM BUS LCD DISPLAY DRIVER LCD_DAC LCD_MODE COM0..3 LCD_CLK LCD_E 4 LCD_BLKMAP LCD_SEG SEG... LCD_Y DIGITAL I/O DIO_DIR DIO_R DIO 8 SPI SLAVE TEST TEST MODE MPU DIO47/SEG67...DIO51/SEG71 DIO40/SEG60...DIO45/SEG65 DIO30/SEG50 DIO29/SEG59 DIO10/SEG30...DIO27/SEG47 DIO9/SEG29/YPULSE DIO8/SEG28/XPULSE DIO7/SEG27/RPULSE DIO6/SEG26/WPULSE DIO5/SEG25/SDATA DIO4/SEG24/SDCK 4 COM0...3 RX UART1 DIO... TX PB PB PCMD EEPROM EEDATA EECTRL PCSZ PCLK PSI PSO SDATA SCLK SPE DIO_EEX 4 7 UART2--OPTICAL OPT_TX OPT_RXDIS OPT_RXINV OPT_RX OPT_TXE OPT_TXINV OPT_TXMOD OPT_FDC NVRAM GP0-GP7 2.5V_NV OPT_TXE MUX_SYNC_E 3 EMULATOR 8 IRAM BUS E_RXTX E_TCLK E_RSTZ ICE_E IRAM 256B TEST MUX TMUX[4:0] 3 SEG20...SEG23 SEG19/CKTEST SEG12...SEG18 SEG11/E_RST SEG10/E_TCLK SEG9/E_RXTX SEG8 SEG7/MUX_SYNC SEG6/PSDI SEG5/PCSZ SEG4/PSDO SEG3/PCLK SEG0...SEG2 DIO56...DIO58 DIO3 DIO2/OPT_TX/WPULSE/RPULSE DIO1/OPT_RX V1 POWER FAULT FAULTZ TMUXOUT RESET ICE_E 05/26/2010 Figure 2: 71M6532D/F IC Functional Block Diagram v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 9 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 1 1.1 Hardware Description Hardware Overview The Teridian 71M6531D/F and 71M6532D/F single-chip energy meters integrates all primary functional blocks required to implement a solid-state electricity meter. Included on the chips are: • An analog front end (AFE) • An Independent digital computation engine (CE) • An 8051-compatible microprocessor (MPU) which executes one instruction per clock cycle (80515) • A voltage reference • A temperature sensor • LCD drivers • RAM and Flash memory • A real time clock (RTC) • A variety of I/O pins Various current sensor technologies are supported including Current Transformers (CT), Resistive Shunts and Rogowski coils. In a typical application, the 32-bit compute engine (CE) of the 71M6531D/F and 71M6532D/F sequentially process the samples from the voltage inputs on pins IA, VA, IB, VB and performs calculations to measure active energy (Wh) and reactive energy (VARh), as well as A2h and V2h for four-quadrant metering. These measurements are then accessed by the MPU, processed further and output using the peripheral devices available to the MPU. In addition to advanced measurement functions, the real time clock function allows the 71M6531D/F and 71M6532D/F to record time of use (TOU) metering information for multi-rate applications and to time-stamp tamper events. Measurements can be displayed on 3.3 V LCDs commonly used in low-temperature environments. Flexible mapping of LCD display segments facilitate integration of existing custom LCDs. Design trade-off between the number of LCD segments and DIO pins can be implemented in software to accommodate various requirements. In addition to the temperature-trimmed ultra-precision voltage reference, the on-chip digital temperature compensation mechanism includes a temperature sensor and associated controls for correction of unwanted temperature effects on measurement and RTC accuracy, e.g. to meet the requirements of ANSI and IEC standards. Temperature-dependent external components such as a crystal oscillator, current transformers (CTs) and their corresponding signal conditioning circuits can be characterized and their correction factors can be programmed to produce electricity meters with exceptional accuracy over the industrial temperature range. One of the two internal UARTs is adapted to support an Infrared LED with internal drive and sense configuration and can also function as a standard UART. The optical output can be modulated at 38 kHz. This flexibility makes it possible to implement AMR meters with an IR interface. A block diagram of the 71M6531D/F IC is shown in Figure 1. A block diagram of the 71M6532D/F IC is shown in Figure 2. 1.2 1.2.1 Analog Front End (AFE) Signal Input Pins The AFE consists of an input multiplexer, a delta-sigma A/D converter and a voltage reference. All analog signal input pins are sensitive to voltage. In the 71M6531D/F, the VA and VB pins, as well as the IA and IB pins are single-ended. In the 71M6532D/F, the IAP/IAN and IBP/IBN pins can be programmed individually to be differential (see I/O RAM bit SEL_IAN and SEL_IBN) or single-ended. The differential signal is applied between the IAP and IAN input pins and between the IBP and IBN input pins. Single-ended signals are applied to the IAP and IBP input pins whereas the common signal, return, is the V3P3A pin. When using the differential mode, inputs can be chopped, i.e. a connection from V3P3A to IAP or IAN (or IBP an IBN, respectively) alternates in each multiplexer cycle. 10 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 1.2.2 Input Multiplexer The input multiplexer supports up to four input signals that are applied to pins IA (IAP/IAN), VA, IB (IBP/IBN), and VB of the device. Additionally, using the alternate multiplexer selection, it has the ability to select temperature and the battery voltage. The multiplexer can be operated in two modes: • • During a normal multiplexer cycle, the signals from the IA (IAP/IAN), IB (IBP/IBN), VA and VB pins are selected. During the alternate multiplexer cycle, the temperature signal (TEMP) and the battery monitor are selected, along with some of the voltage and/or current signal sources shown in Table 1. To prevent unnecessary drainage on the battery, the battery monitor is only active when enabled with the BME bit (0x2020[6]) in the I/O RAM. The alternate multiplexer cycles are usually performed infrequently (every second or so) by the MPU. In order to prevent disruption of the voltage tracking PLL and voltage allpass networks, VA is not replaced in the ALT selections. Table 1 details the regular and alternative multiplexer sequences. The computation engine (CE) fills in missing samples due to an ALT multiplexer sequence. Table 1: Inputs Selected in Regular and Alternate Multiplexer Cycles Regular Slot Time Slot 0 1 2 3 – – – – – – Typical Selections Register SLOT0_SEL[3:0] SLOT1_SEL[3:0] SLOT2_SEL[3:0] SLOT3_SEL[3:0] SLOT4_SEL[3:0] SLOT5_SEL[3:0] SLOT6_SEL[3:0] SLOT7_SEL[3:0] SLOT8_SEL[3:0] SLOT9_SEL[3:0] RAM Address 0 1 2 3 – – – – – – Signal for ADC IA VB IB VA – – – – – – Register SLOT0_ALTSEL[3:0] SLOT1_ALTSEL[3:0] SLOT2_ALTSEL[3:0] SLOT3_ALTSEL[3:0] SLOT4_ALTSEL[3:0] SLOT5_ALTSEL[3:0] SLOT6_ALTSEL[3:0] SLOT7_ALTSEL[3:0] SLOT8_ALTSEL[3:0] SLOT9_ALTSEL[3:0] Alternate Slot Typical Selections RAM Address A 1 B 3 – – – – – – Signal for ADC TEMP VB VBAT VA – – – – – – The sequence of sampled channels is fully programmable using I/O RAM registers. SLOTn_SEL[3:0] selects the input for the nth state in a standard multiplexer frame, while SLOTn_ALTSEL[3:0] selects the input for the nth state in an alternate multiplexer frame. The states shown in Table 1 are examples for possible multiplexer state sequences. In a typical application, IA (IAN/IAP) and IB (IBN/IBP) are connected to current transformers that sense the current on each phase of the line voltage. VA and VB are typically connected to voltage sensors through resistor dividers. The multiplexer control circuit (MUX_CTRL signal) controls multiplexer advance, FIR initiation and VREF chopping. Additionally, MUX_CTRL launches each pass through the CE program. Conceptually, MUX_CTRL is clocked by CK32, the 32768 Hz clock from the PLL block. The behavior of MUX_CTRL is governed by MUX_ALT, EQU[2:0], CHOP_E[1:0] and MUX_DIV[3:0]. The MUX_ALT bit requests an alternative multiplexer frame. The bit may be asserted on any MPU cycle and may be subsequently de-asserted on any cycle including the next one. A rising edge on MUX_ALT will cause MUX_CTRL to wait until the next multiplexer frame and implement a single alternate multiplexer frame. Another control input to the MUX is MUX_DIV[3:0]. These four bits can request from 1 to 10 multiplexer states per frame. The multiplexer always starts at the beginning of its list and proceeds until the number of states defined by MUX_DIV[3:0] have been converted. v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 11 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 The duration of each multiplexer state depends on the number of ADC samples processed by the FIR, which is set by FIR_LEN[1:0]. Each multiplexer state will start on the rising edge of CK32. The MUX_CTRL signal sends an FIR_START command to begin the calculation of a sample value from the ADC bit stream by the FIR. Upon receipt of the FIR_DONE signal from the FIR, the multiplexer will wait until the next CK32 rising edge to increment its state and initiate the next FIR conversion. FIR conversions require 1, 2, or 3 CK32 cycles. The number of CK32 cycles is determined by FIR_LEN[1:0], as shown in Table 2. 1.2.3 A/D Converter (ADC) A single delta-sigma A/D converter digitizes the voltage and current inputs to the 71M6531D/F and 71M6532D/F. The resolution of the ADC is programmable using the I/O RAM M40MHZ and M26MHZ bits (see Table 2). The CE code must be tailored for use with the selected ADC resolution. Table 2: ADC Resolution Setting for [M40MHZ, M26MHZ] [00], [10] or [11] FIR_LEN[1:0] 0 1 2 0 1 2 CK32 Cycles 1 2 3 1 2 3 FIR CE Cycles 138 288 384 186 384 588 Resolution 18 bits 21 bits 22 bits 19 bits 22 bits 24 bits [01] Initiation of each ADC conversion is controlled by MUX_CTRL as described above. At the end of each ADC conversion, the FIR filter output data is stored into the CE RAM location determined by the MUX selection. 1.2.4 FIR Filter The finite impulse response filter is an integral part of the ADC and it is optimized for use with the multiplexer. The purpose of the FIR filter is to decimate the ADC output to the desired resolution. At the end of each ADC conversion, the output data is stored into the fixed CE RAM location determined by the multiplexer selection as shown in Table 3. FIR data is stored LSB justified, but shifted left by eight bits. Table 3: ADC RAM Locations Address (HEX) 0x00 0x01 0x02 0x03 Name IA VB IB VA Address (HEX) 0x09 0x0A 0x0B Name AUX TEMP VBAT 1.2.5 Voltage References The device includes an on-chip precision bandgap voltage reference that incorporates auto-zero techniques. The reference is trimmed to minimize errors caused by component mismatch and drift. The result is a voltage output with a predictable temperature coefficient. The amplifier within the reference is chopper stabilized, i.e. the polarity can be switched by the MPU using CHOP_E[1:0] (IORAM 0x2002[5:4]). The CHOP_E[1:0] field enables the MPU to operate the chopper circuit in regular or inverted operation, or in toggling mode. When the chopper circuit is toggled in between multiplexer cycles, DC offsets on the measured signals will automatically be averaged out. The general topology of a chopped amplifier is shown in Figure 3. 12 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 A B A Data Sheet 71M6531D/F-71M6532D/F Vinp Vinn CROSS + G - Voutp Voutn B A B A B Figure 3: General Topology of a Chopped Amplifier It is assumed that an offset voltage Voff appears at the positive amplifier input. With all switches, as controlled by CROSS, in the A position, the output voltage is: Voutp – Voutn = G (Vinp + Voff – Vinn) = G (Vinp – Vinn) + G Voff With all switches set to the B position by applying the inverted CROSS signal, the output voltage is: Voutn – Voutp = G (Vinn – Vinp + Voff) = G (Vinn – Vinp) + G Voff, or Voutp – Voutn = G (Vinp – Vinn) - G Voff Thus, when CROSS is toggled, e.g. after each multiplexer cycle, the offset will alternately appear on the output as positive and negative, which results in the offset effectively being eliminated, regardless of its polarity or magnitude. When CROSS is high, the connection of the amplifier input devices is reversed. This preserves the overall polarity of that amplifier gain; it inverts its input offset. By alternately reversing the connection, the amplifier’s offset is averaged to zero. This removes the most significant long-term drift mechanism in the voltage reference. The CHOP_E[1:0] field controls the behavior of CROSS. The CROSS signal will reverse the amplifier connection in the voltage reference in order to negate the effects of its offset. On the first CK32 rising edge after the last multiplexer state of its sequence, the multiplexer will wait one additional CK32 cycle before beginning a new frame. At the beginning of this cycle, the value of CROSS will be updated according to the CHOP_E[1:0] field. The extra CK32 cycle allows time for the chopped VREF to settle. During this cycle, MUXSYNC is held high. The leading edge of MUXSYNC initiates a pass through the CE program sequence. The beginning of the sequence is the serial readout of the four RTM words. CHOP_E[1:0] has four states: positive, reverse and two toggle states. In the positive state, CHOP_E[1:0] = 01, CROSS and CHOP_CLK are held low. In the reverse state, CHOP_E[1:0] = 10, CROSS and CHOP_CLK are held high. In the first toggle state, CHOP_E[1:0] = 00, CROSS is automatically toggled near the end of each multiplexer frame and an ALT frame is forced during the last multiplexer frame in each SUM cycle. It is desirable that CROSS take on alternate values during each ALT frame. For this reason, if CHOP_E[1:0] = 00, CROSS will not toggle at the end of the multiplexer frame immediately preceding the ALT frame in each accumulation interval. Accumulation interval n 1 2 3 4 Multiplexer frames Alternative MUX cycle CROSS 2519 2520 1 2 3 Accumulation interval n+1 4 Multiplexer frames 2519 2520 Alternative MUX cycle CROSS Figure 4: CROSS Signal with CHOP_E[1:0] = 00 Figure 4 shows CROSS over two accumulation interval when CHOP_E[1:0] = 00: At the end of the first interval, CROSS is low, at the end of the second interval, CROSS is high. The offset error for the two temperature measurements taken during the ALT multiplexer frames will be averaged to zero. Note that v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 13 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 the number of multiplexer frames in an accumulation interval is always even. Operation with CHOP_E[1:0] = 00 does not require control of the chopping mechanism by the MPU while eliminating the offset for temperature measurement. In the second toggle state, CHOP_E[1:0] = 11, no ALT frame is forced during the last multiplexer cycle in an accumulation interval and CROSS always toggles near the end of each multiplexer frame. The internal bias voltage, VBIAS (typically 1.6 V), is used by the ADC when measuring the temperature and battery monitor signals. 1.2.6 Temperature Sensor The 71M6531D/F and 71M6532D/F include an on-chip temperature sensor implemented as a bandgap reference. It is used to determine the die temperature. The MPU may request an alternate multiplexer cycle containing the temperature sensor output by asserting MUX_ALT. The primary use of the temperature data is to determine the magnitude of compensation required to offset the thermal drift in the system (see Section 3.4 Temperature Compensation). 1.2.7 Battery Monitor The battery voltage is measured by the ADC during alternative multiplexer frames if the BME (Battery Measure Enable) bit in the I/O RAM is set. While BME is set, an on-chip 45 kΩ load resistor is applied to the battery and a scaled fraction of the battery voltage is applied to the ADC input. After each alternative MUX frame, the result of the ADC conversion is available at XRAM address 0x0B. BME is ignored and assumed zero when system power is not available (V1 < VBIAS). See Section 5.4.4 Battery Monitor. 1.2.8 AFE Functional Description The AFE functions as a data acquisition system, controlled by the MPU. The main signals (IA, VA, IB and VB) are sampled, and the ADC counts obtained are stored in XRAM where they can be accessed by the CE and, if necessary, by the MPU. Alternate multiplexer cycles are initiated less frequently by the MPU to gather access to the slow temperature and battery signals. Figure 5 shows the block diagram of the AFE, with current inputs shown only as differential pair of pins (for the 71M6531D/F, the current input for phase A is a single pin [IA]). VREF ∆Σ ADC CONVERTER VBIAS VBIAS FIR FIR_LEN 22 IAP IAN VA IBP IBN VB VBAT EQU MUX_ALT MUX_DIV MUX VADC VREF VREF_CAL VREF_DIS ADC_E VREF TEMP SENSOR Figure 5: AFE Block Diagram (Shown for the 71M6532D/F) 14 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 1.3 Digital Computation Engine (CE) The CE, a dedicated 32-bit signal processor, performs the precision computations necessary to accurately measure energy. The CE calculations and processes include: • • • • • • • • Multiplication of each current sample with its associated voltage sample to obtain the energy per sample (when multiplied with the constant sample time). Frequency-insensitive delay cancellation on all four channels (to compensate for the delay between samples caused by the multiplexing scheme). 90° phase shifter (for VAR calculations). Pulse generation. Monitoring of the input signal frequency (for frequency and phase information). Monitoring of the input signal amplitude (for sag detection). Scaling of the processed samples based on calibration coefficients. Scaling of all samples based on temperature compensation information (71M6532D/F only). The CE program resides in flash memory. Common access to flash memory by CE and MPU is controlled by a memory share circuit. Each CE instruction word is two bytes long. Allocated flash space for the CE program cannot exceed 4096 16-bit words (8 KB). The CE program counter begins a pass through the CE code each time multiplexer state 0 begins. The code pass ends when a HALT instruction is executed. For proper operation, the code pass must be completed before the multiplexer cycle ends (see Section 2.2 System Timing Summary). The CE program must begin on a 1-KB boundary of the flash address. The I/O RAM register CE_LCTN[7:0] defines which 1-KB boundary contains the CE code. Thus, the first CE instruction is located at 1024*CE_LCTN[7:0]. The CE can access up to 4 KB of data RAM (XRAM), or 1024 32-bit data words, starting at RAM address 0x0000. The XRAM can be accessed by the FIR filter block, the RTM circuit, the CE, and the MPU. Assigned time slots are reserved for FIR, and MPU, respectively, to prevent bus contention for XRAM data access. The MPU can read and write the XRAM as the primary means of data communication between the two processors. Table 4 shows the CE addresses in XRAM allocated to analog inputs from the AFE. Table 4: XRAM Locations for ADC Results Address (HEX) 0x00 0x01 0x02 0x03 0x04...0x09 0x0A 0x0B Name IA VA IB VB – TEMP VBAT Description Phase A current Phase A voltage Phase B current Phase B voltage Not used Temperature Battery Voltage The CE is aided by support hardware to facilitate implementation of equations, pulse counters and accumulators. This hardware is controlled through I/O RAM locations EQU[2:0] (equation assist), the DIO_PV and DIO_PW (pulse count assist) bits and PRE_SAMPS[1:0] and SUM_CYCLES[5:0] (accumulation assist). PRE_SAMPS[1:0] and SUM_CYCLES[5:0] support a dual level accumulation scheme where the first accumulator accumulates results from PRE_SAMPS[1:0] samples and the second accumulator accumulates up to SUM_CYCLES[5:0] of the first accumulator results. The integration time for each energy output is PRE_SAMPS[1:0] * SUM_CYCLES[5:0]/2520.6 (with MUX_DIV[3:0] = 1). The CE hardware issues the XFER_BUSY interrupt when the accumulation is complete. v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 15 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 1.3.1 Meter Equations The 71M6531D/F and 71M6532D/F provide hardware assistance to the CE in order to support various meter equations. This assistance is controlled through I/O RAM location EQU[2:0] (equation assist). The Compute Engine (CE) firmware for residential configurations implements the equations listed in Table 5. EQU[2:0] specifies the equation to be used based on the number of phases used for metering. Table 5: Meter Equations Watt and VAR Formula EQU[2:0] Description 1 element, 2 W, 1φ with neutral current sense 1 element, 3 W, 1φ 2 element, 3 W, 3φ Delta Element 0 VA · IA VA(IAIB)/2 VA · IA Element 1 VA · IB N/A VB · IB Element 2 N/A N/A N/A Sequence is programmable with SLOTn_SEL[3:0] Sequence is programmable with SLOTn_ALTSEL[3:0] Mux Sequence ALT Mux Sequence 0 1 2 Not all CE codes support all equations. 1.3.2 Real-Time Monitor The CE contains a Real-Time Monitor (RTM), which can be programmed to monitor four selectable XRAM locations at full sample rate. The four monitored locations are serially output to the TMUXOUT pin via the digital output multiplexer at the beginning of each CE code pass. The RTM can be enabled and disabled with the RTM_E bit. The RTM output is clocked by CKTEST (pin SEG19/CKTEST), with the clock output enabled by setting CKOUT_E = 1. Each RTM word is clocked out in 35 cycles and contains a leading flag bit. See Figure 20 for the RTM output format. RTM is low when not in use. 1.3.3 Pulse Generators The 71M6531D/F and 71M6532D/F provide four pulse generators, RPULSE, WPULSE, XPULSE and YPULSE, as well as increased hardware support for the two original pulse generators (RPULSE and WPULSE). The pulse generators can be used to output CE status indicators, SAG for example, to DIO pins. The polarity of the pulses may be inverted with the PLS_INV bit. When this bit is set, the pulses are active high, rather than the more usual active low. PLS_INV inverts all the pulse outputs. XPULSE and YPULSE Pulses generated by the CE may be exported to the XPULSE and YPULSE pulse outputs. Pins DIO8 and DIO9 are used for these pulses. Generally, the XPULSE and YPULSE outputs are updated once on each pass of the CE code, resulting in a pulse frequency up to a maximum of 1260Hz (assuming a MUX frame is 13 CK32 cycles). The YPULSE pin can be used by the CE code to generate interrupts based on sag events. This method is faster than checking the sag bits by the MPU at every CE_BUSY interrupt. See Section 4.3.6 CE Status and Control for details. RPULSE and WPULSE During each CE code pass, the hardware stores exported WPULSE AND RPULSE sign bits in an 8-bit FIFO and outputs them at a specified interval. This permits the CE code to calculate the RPULSE and WPULSE outputs at the beginning of its code pass and to rely on hardware to spread them over the MUX frame. The FIFO is reset at the beginning of each MUX frame. The PLS_INTERVAL register controls the delay to the first pulse update and the interval between subsequent updates. Its LSB is 4 CK_FIR cycles. If zero, the FIFO is deactivated and the DFFs are updated immediately. Thus, NINTERVAL is 4 * PLS_INTERVAL. 16 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F Since the FIFO resets at the beginning of each MUX frame, the user must specify PLS_INTERVAL so that all of the pulse updates are output before the MUX frame completes. For instance, if the CE code outputs 5 updates per MUX interval and if the MUX interval is 1950 cycles long, the ideal value for the interval is 1950/5/4 = 97.5. If PLS_INTERVAL = 98, the fifth output will occur too late and be lost. In this case, the proper value for PLS_INTERVAL is 97. Hardware also provides a maximum pulse width feature. The PLS_MAXWIDTH register selects a maximum negative pulse width to be Nmax updates according to the formula: Nmax = (2*PLS_MAXWIDTH+1). If PLS_MAXWIDTH = 255, no width checking is performed. The WPULSE and RPULSE pulse generator outputs are available on DIO6 and DIO7, respectively. They can also be output on OPT_TX (see OPT_TXE[1:0] for details). 1.3.4 Data RAM (XRAM) The CE and MPU use a single general-purpose Data RAM (also referred to as XRAM). The Data RAM is 1024 32-bit words, shared between the CE and the MPU using a time-multiplex method. This reduces MPU wait states when accessing CE data. When the MPU and CE are clocking at maximum frequency (10 MHz), the DRAM will make up to four accesses during each 100 ns interval. These consist of two MPU accesses, one CE access and one SPI access. The Data RAM is 32 bits wide and uses an external multiplexer so as to appear byte-wide to the MPU. The Data RAM hardware will convert an MPU byte write operation into a read-modify-write operation that requires two Data RAM accesses. The second access is guaranteed to be available because the MPU cannot access the XRAM on two consecutive instructions unless it is using the same address. In addition to the reduction of wait states, this arrangement permits the MPU to easily use unneeded CE data memory. Likewise, the amount of memory the CE uses is not limited by the size of a dedicated CE data RAM. 1.3.5 Delay Compensation When measuring the energy of a phase (i.e., Wh and VARh) in a service, the voltage and current for that phase must be sampled at the same instant. Otherwise, the phase difference, Ф, introduces errors. φ= t delay T ⋅ 360 o = t delay ⋅ f ⋅ 360 o Where f is the frequency of the input signal and tdelay is the sampling delay between voltage and current. In traditional meter ICs, sampling is accomplished by using two A/D converters per phase (one for voltage and the other one for current) controlled to sample simultaneously. Teridian’s patented Single-Converter Technology®, however, exploits the 32-bit signal processing capability of its CE to implement “constant delay” all-pass filters. These all-pass filters correct for the conversion time difference between the voltage and the corresponding current samples that are obtained with a single multiplexed A/D converter. The “constant delay” all-pass filters provide a broad-band delay β, that is precisely matched to the difference in sample time between the voltage and the current of a given phase. This digital filter does not affect the amplitude of the signal, but provides a precisely controlled phase response. The delay compensation implemented in the CE aligns the voltage samples with their corresponding current samples by routing the voltage samples through the all-pass filter, thus delaying the voltage samples by β, resulting in the residual phase error β – Ф. The residual phase error is negligible, and is typically less than ±1.5 millidegrees at 100Hz, thus it does not contribute to errors in the energy measurements. 1.3.6 CE Functional Overview The ADC processes one sample per channel per multiplexer cycle. Figure 6 shows the timing of the samples taken during one multiplexer cycle. The number of samples processed during one accumulation cycle is controlled by PRE_SAMPS[1:0] (IORAM 0x2001[7:6]) and SUM_CYCLES[5:0] (IORAM 0x2001[5:0]). The integration time for each energy output is: PRE_SAMPS[1:0] * SUM_CYCLES[5:0] / 2520.6, where 2520.6 is the sample rate [Hz] v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 17 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 For example, PRE_SAMPS[1:0] = 42 and SUM_CYCLES[5:0] = 50 will establish 2100 samples per accumulation cycle. PRE_SAMPS[1:0] = 100 and SUM_CYCLES[5:0] = 21 will result in the exact same accumulation cycle of 2100 samples or 833 ms. After an accumulation cycle is completed, the XFER_BUSY interrupt signals to the MPU that accumulated data are available. 1/32768Hz = 30.518µs IB VB VA IA 13/32768Hz = 397µs per mux cycle Figure 6: Samples from Multiplexer Cycle The end of each multiplexer cycle is signaled to the MPU by the CE_BUSY interrupt. At the end of each multiplexer cycle status information, such as sag data and the digitized input signal, is available to the MPU. 833ms 20ms XFER_BUSY Interrupt to MPU Figure 7: Accumulation Interval Figure 7 shows the accumulation interval resulting from PRE_SAMPS[1:0] = 42 and SUM_CYCLES[5:0] = 50, consisting of 2100 samples of 397 µs each, followed by the XFER_BUSY interrupt. The sampling in this example is applied to a 50 Hz signal. There is no correlation between the line signal frequency and the choice of PRE_SAMPS[1:0] or SUM_CYCLES[5:0] (even though when SUM_CYCLES[5:0] = 42 one set of SUM_CYCLES[5:0] happens to sample a period of 16.6 ms). Furthermore, sampling does not have to start when the line voltage crosses the zero line and the length of the accumulation interval need not be an integer multiple of the signal cycles. 18 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 1.4 80515 MPU Core The 71M6531D/F and 71M6532D/F include an 80515 MPU (8-bit, 8051-compatible) that processes most instructions in one clock cycle. Using a 10-MHz clock results in a processing throughput of 10 MIPS. The 80515 architecture eliminates redundant bus states and implements parallel execution of fetch and execution phases. Normally, a machine cycle is aligned with a memory fetch, therefore, most of the 1-byte instructions are performed in a single machine cycle (MPU clock cycle). This leads to an 8x average performance improvement (in terms of MIPS) over the Intel 8051 device running at the same clock frequency. Table 6 shows the CKMPU frequency as a function of the allowed combinations of the MPU clock divider MPU_DIV[2:0] and the MCK divider bits M40MHZ and M26MHZ. Actual processor clocking speed can be adjusted to the total processing demand of the application (metering calculations, AMR management, memory management, LCD driver management and I/O management) using the I/O RAM field MPU_DIV[2:0] and the MCK divider bits M40MHZ and M26MHZ, as shown in Table 6. Table 6: CKMPU Clock Frequencies MPU_DIV [2:0] 000 001 010 011 100 101 110 111 [M40MHZ, M26MHZ] Values [1,0] [0,1] [0,0] 9.8304 MHz 6.5536 MHz 4.9152 MHz 4.9152 MHz 3.2768 MHz 2.4576 MHz 2.4576 MHz 1.6384 MHz 1.2288 MHz 1.2288 MHz 819.2 kHz 614.4 kHz 614.4 kHz 409.6 kHz 307.2 kHz 307.2 kHz 204.8 kHz 153.6 kHz 153.6 kHz 102.4 kHz 76.80 kHz 153.6 kHz 102.4 kHz 76.8 kHz Typical measurement and metering functions based on the results provided by the internal 32-bit compute engine (CE) are available for the MPU as part of Teridian’s standard library. Teridian provides demonstration source code to help reduce the design cycle. 1.4.1 Memory Organization and Addressing The 80515 MPU core incorporates the Harvard architecture with separate code and data spaces. Memory organization in the 80515 is similar to that of the industry standard 8051. There are four memory areas: Program memory (Flash, shared by MPU and CE), external RAM (Data RAM, shared by the CE and MPU, Configuration or I/O RAM), and internal data memory (Internal RAM). Table 7 shows the memory map. Program Memory The 80515 can address up to 64 KB of program memory space from 0x0000 to 0xFFFF. Program memory is read when the MPU fetches instructions or performs a MOVC operation. Access to program memory above 0x7FFF is controlled by the FL_BANK[2:0] register (SFR 0xB6). After reset, the MPU starts program execution from program memory location 0x0000. The lower part of the program memory includes reset and interrupt vectors. The interrupt vectors are spaced at 8-byte intervals, starting from 0x0003. MPU External Data Memory (XRAM) Both internal and external memory is physically located on the 71M6531 device. The external memory referred to in this documentation is only external to the 80515 MPU core. 4 KB of RAM starting at address 0x0000 is shared by the CE and MPU. The CE normally uses the first 1 KB, leaving 3 KB for the MPU. Different versions of the CE code use varying amounts. Consult the documentation for the specific code version being used for the exact limit. If the MPU overwrites the CE’s working RAM, the CE’s output may be corrupted. If the CE is disabled, the first 0x40 bytes of RAM are still unusable while MUX_DIV[3:0] ≠ 0 because the 71M6531 ADC writes to these locations. Setting MUX_DIV[3:0] = 0 disables the ADC output preventing the CE from writing the first 0x40 bytes of RAM. v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 19 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 The 80515 writes into external data memory when the MPU executes a MOVX @Ri,A or MOVX @DPTR,A instruction. The MPU reads external data memory by executing a MOVX A,@Ri or MOVX A,@DPTR instruction (SFR PDATA provides the upper 8 bytes for the MOVX A,@Ri instruction). Internal and External Memory Map Table 7 shows the address, type, use and size of the various memory components. Only the memory ranges shown in Table 7 contain physical memory. Table 7: Memory Map Address (hex) 00000-1FFFF/ 00000-3FFFF 0000-0FFF Memory Technology Flash Memory Static RAM Memory Type Non-volatile Name Program memory for MPU and CE Typical Usage MPU Program and non-volatile data CE program (on 1 KB boundary) Shared by CE and MPU Memory Size (bytes) 128 KB/ 256 KB† 8 KB max. 4 KB 256 8 256 External RAM (XRAM) 2000-20BF, Configuration RAM, Hardware control Static RAM Volatile I/O RAM 20C8-20FF Non-volatile Configuration RAM, Battery-buffered 20C0-20C7 Static RAM I/O RAM (battery) memory 0000-00FF Static RAM Volatile Internal RAM Part of 80515 Core † Memory size depends on the IC. See Section1.5.5 Physical Memory for details. Volatile MOVX Addressing There are two types of instructions differing in whether they provide an 8-bit or 16-bit indirect address to the external data RAM. In the first type, MOVX A,@Ri, the contents of R0 or R1 in the current register bank provide the eight lower-ordered bits of address. The eight high-ordered bits of the address are specified with the PDATA SFR. This method allows the user paged access (256 pages of 256 bytes each) to all ranges of the external data RAM. In the second type of MOVX instruction, MOVX A,@DPTR, the data pointer generates a 16-bit address. This form is faster and more efficient when accessing very large data arrays (up to 64 KB), since no additional instructions are needed to set up the eight high ordered bits of the address. It is possible to mix the two MOVX types. This provides the user with four separate data pointers, two with direct access and two with paged access, to the entire 64 KB of external memory range. Dual Data Pointer The Dual Data Pointer accelerates the block moves of data. The standard DPTR is a 16-bit register that is used to address external memory or peripherals. In the 80515 core, the standard data pointer is called DPTR, the second data pointer is called DPTR1. The data pointer select bit, located in the LSB of the DPS register (DPS[0]), chooses the active pointer. DPTR is selected when DPS[0] = 0 and DPTR1 is selected when DPS[0] = 1. The user switches between pointers by toggling the LSB of the DPS register. The values in the data pointers are not affected by the LSB of the DPS register. All DPTR related instructions use the currently selected DPTR for any activity. The second data pointer may not be supported by certain compilers. DPTR1 is useful for copy routines, where it can make the inner loop of the routine two instructions faster compared to the reloading of DPTR from registers. Any interrupt routine using DPTR1 must save and restore DPS, DPTR and DPTR1, which increases stack usage and slows down interrupt latency. By selecting the Evatronics R80515 core in the Keil compiler project settings and by using the compiler directive “MODC2”, dual data pointers are enabled in certain library routines. 20 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F An alternative data pointer is available in the form of the PDATA register (SFR 0xBF), sometimes referred to as USR2). It defines the high byte of a 16-bit address when reading or writing XDATA with the instruction MOVX A,@Ri or MOVX @Ri,A. Internal Data Memory Map and Access The Internal data memory provides 256 bytes (0x00 to 0xFF) of data memory. The internal data memory address is always 1 byte wide. Table 8 shows the internal data memory map. The Special Function Registers (SFR) occupy the upper 128 bytes. The SFR area of internal data memory is available only by direct addressing. Indirect addressing of this area accesses the upper 128 bytes of Internal RAM. The lower 128 bytes contain working registers and bit addressable memory. The lower 32 bytes form four banks of eight registers (R0-R7). Two bits on the program memory status word (PSW) select which bank is in use. The next 16 bytes form a block of bit addressable memory space at bit addresses 0x00-0x7F. All of the bytes in the lower 128 bytes are accessible through direct or indirect addressing. Table 8: Internal Data Memory Map Address Range 0x80 0xFF 0x30 0x7F 0x20 0x2F 0x00 0x1F Direct addressing Indirect addressing Special Function Registers (SFRs) RAM Byte addressable area Bit addressable area Register banks R0…R7 1.4.2 Special Function Registers (SFRs) A map of the Special Function Registers is shown in Table 9. Only a few addresses in the SFR memory space are occupied, the others are not implemented. A read access to unimplemented addresses will return undefined data, while a write access will have no effect. SFRs specific to the 71M6531D/F and 71M6532D/F are shown in bold print on a gray field. The registers at 0x80, 0x88, 0x90, etc., are bit addressable, all others are byte addressable. See the restrictions for the INTBITS register in Table 14. Table 9: Special Function Register Map Bit Hex/ Addressable Bin X000 X001 F8 INTBITS B F0 E8 IFLAGS A E0 WDCON D8 PSW D0 T2CON C8 IRCON C0 IEN1 IP1 B8 B0 P3 IEN0 IP0 A8 A0 P2 DIR2 S0CON S0BUF 98 90 P1 DIR1 TCON TMOD 88 P0 SP 80 Byte Addressable X010 X011 X100 X101 X110 X111 Bin/ Hex FF F7 EF E7 DF D7 CF C7 BF B7 AF A7 9F 97 8F 87 S0RELH FLSHCTL S0RELL DIR0 IEN2 DPS TL0 DPL S1RELH FL_BANK PDATA PGADR S1CON TL1 DPH S1BUF ERASE TH0 DPL1 S1RELL TH1 DPH1 EEDATA CKCON EECTRL PCON v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 21 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 1.4.3 Generic 80515 Special Function Registers Table 10 shows the location, description and reset or power-up value of the generic 80515 SFRs. Additional descriptions of the registers can be found at the page numbers listed in the table. Table 10: Generic 80515 SFRs - Location and Reset Values Name P0 SP DPL DPH DPL1 DPH1 PCON TCON TMOD TL0 TL1 TH0 TH1 CKCON P1 DPS S0CON S0BUF IEN2 S1CON S1BUF S1RELL P2 IEN0 IP0 S0RELL P3 IEN1 IP1 S0RELH S1RELH PDATA IRCON T2CON PSW WDCON A B Address (Hex) 0x80 0x81 0x82 0x83 0x84 0x85 0x87 0x88 0x89 0x8A 0x8B 0x8C 0x8D 0x8E 0x90 0x92 0x98 0x99 0x9A 0x9B 0x9C 0x9D 0xA0 0xA8 0xA9 0xAA 0xB0 0xB8 0xB9 0xBA 0xBB 0xBF 0xC0 0xC8 0xD0 0xD8 0xE0 0xF0 Reset value Description (Hex) 0xFF Port 0 0x07 Stack Pointer 0x00 Data Pointer Low 0 0x00 Data Pointer High 0 0x00 Data Pointer Low 1 0x00 Data Pointer High 1 0x00 UART Speed Control, Idle and Stop mode Control 0x00 Timer/Counter Control 0x00 Timer Mode Control 0x00 Timer 0, low byte 0x00 Timer 1, high byte 0x00 Timer 0, low byte 0x00 Timer 1, high byte 0x01 Clock Control (Stretch=1) 0xFF Port 1 0x00 Data Pointer select Register 0x00 Serial Port 0, Control Register 0x00 Serial Port 0, Data Buffer 0x00 Interrupt Enable Register 2 0x00 Serial Port 1, Control Register 0x00 Serial Port 1, Data Buffer 0x00 Serial Port 1, Reload Register, low byte 0xFF Port 2 0x00 Interrupt Enable Register 0 0x00 Interrupt Priority Register 0 0xD9 Serial Port 0, Reload Register, low byte 0xFF Port 3 0x00 Interrupt Enable Register 1 0x00 Interrupt Priority Register 1 0x03 Serial Port 0, Reload Register, high byte 0x03 Serial Port 1, Reload Register, high byte 0x00 High address byte for MOVX@Ri - also called USR2 0x00 Interrupt Request Control Register 0x00 Polarity for INT2 and INT3 0x00 Program Status Word 0x00 Baud Rate Control Register (only WDCON[7] bit used) 0x00 Accumulator 0x00 B Register Page 24 23 23 23 23 23 28 31 29 28 28 28 28 24 23 20 27 26 31 27 26 26 23 30 33 26 23 31 33 26 26 20 31 31 23 26 23 23 22 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Accumulator (ACC, A, SFR 0xE0): Data Sheet 71M6531D/F-71M6532D/F ACC is the accumulator register. Most instructions use the accumulator to hold the operand. The mnemonics for accumulator-specific instructions refer to accumulator as A, not ACC. B Register (SFR 0xF0): The B register is used during multiply and divide instructions. It can also be used as a scratch-pad register to hold temporary data. Program Status Word (PSW, SFR 0xD0): This register contains various flags and control bits for the selection of the register banks (see Table 11). Table 11: PSW Bit Functions (SFR 0xD0) PSW Bit 7 6 5 Symbol CV AC F0 Function Carry flag. Auxiliary Carry flag for BCD operations. General-purpose Flag 0 available for user. F0 is not to be confused with the F0 flag in the CESTATUS register. Register bank select control bits. The contents of RS1 and RS0 select the working register bank: RS1/RS0 Bank selected Location 00 Bank 0 0x00 – 0x07 01 Bank 1 0x08 – 0x0F 10 Bank 2 0x10 – 0x17 11 Bank 3 0x18 – 0x1F Overflow flag. User defined flag. Parity flag, affected by hardware to indicate odd or even number of one bits in the Accumulator, i.e. even parity. 4 RS1 3 2 1 0 RS0 OV P Stack Pointer (SP, SFR 0x81): The stack pointer is a 1-byte register initialized to 0x07 after reset. This register is incremented before PUSH and CALL instructions, causing the stack to begin at location 0x08. Data Pointer: The data pointers (DPTR and DPRT1) are 2 bytes wide. The lower part is DPL(SFR 0x82) and DPL1 (SFR0x84) and the highest is DPH (SFR0x83) and DPH1 (SFR 0x85). The data pointers can be loaded as two registers (e.g. MOV DPL,#data8). They are generally used to access external code or data space (e.g. MOVC A,@A+DPTR or MOVX A,@DPTR respectively). Program Counter: The program counter (PC) is 2 bytes wide and initialized to 0x0000 after reset. The PC is incremented when fetching operation code or when operating on data from program memory. Port Registers: The I/O ports are controlled by Special Function Registers P0, P1 and P2 as shown in Table 12. The contents of the SFR can be observed on corresponding pins on the chip. Writing a 1 to any of the ports causes the corresponding pin to be at high level (V3P3). Writing a 0 causes the corresponding pin to be held at a low level (GND). The data direction registers DIR0, DIR1 and DIR2 define individual pins as input or output pins (see Sections 1.5.7 Digital I/O – 71M6531D/F or 1.5.8 Digital I/O – 71M6532D/F). v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 23 Data Sheet 71M6531D/F-71M6532D/F Table 12: Port Registers Register P0 DIR0 P1 DIR1 P2 DIR2 FDS 6531/6532 005 SFR R/W Description Address 0x80 R/W Register for port 0 read and write operations. 0xA2 R/W Data direction register for port 0. Setting a bit to 1 indicates that the corresponding pin is an output. 0x90 R/W Register for port 1 read and write operations. 0x91 R/W Data direction register for port 1. 0xA0 R/W Register for port 2 read and write operations. 0xA1 R/W Data direction register for port 2. All DIO ports on the chip are bi-directional. Each of them consists of a Latch (SFR P0 to P2), an output driver and an input buffer, therefore the MPU can output or read data through any of these ports. Even if a DIO pin is configured as an output, the state of the pin can still be read by the MPU, for example when counting pulses issued via DIO pins that are under CE control. The technique of reading the status of or generating interrupts based on DIO pins configured as outputs can be used to implement pulse counting. Clock Stretching (CKCON[2:0], SFR 0x8E) The CKCON[2:0] field defines the stretch memory cycles that could be used for MOVX instructions when accessing slow external peripherals. The practical value of this register for the 71M653x is to guarantee access to XRAM between CE, MPU, and SPI. The default setting of CKCON[2:0] (001) should not be changed.Table 13 shows how the signals of the External Memory Interface change when stretch values are set from 0 to 7. The widths of the signals are counted in MPU clock cycles. The post-reset state of the CKCON[2:0] field (001), which is shown in bold in the table, performs the MOVX instructions with a stretch value equal to 1. Table 13: Stretch Memory Cycle Width CKCON[2:0] 000 001 010 011 100 101 110 111 Stretch Value 0 1 2 3 4 5 6 7 Read signal width memaddr memrd 1 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 Write signal width memaddr memwr 2 1 3 1 4 2 5 3 6 4 7 5 8 6 9 7 1.4.4 Special Function Registers (SFRs) Specific to the 71M6531D/F and 71M6532D/F Table 14 shows the location and description of the SFRs specific to the 71M6531D/F and 71M6532D/F. Table 14: 71M6531D/F and 71M6532D/F Specific SFRs Register (Alternate Name) EEDATA EECTRL SFR Address 0x9E 0x9F Bit Field Name R/W R/W R/W Description I2C EEPROM interface data register. I2C EEPROM interface control register. See Section 1.5.14 EEPROM Interface for a description of the command and status bits available for EECTRL. v1.3 24 © 2005-2010 TERIDIAN Semiconductor Corporation FDS 6531/6532 005 Register (Alternate Name) ERASE (FLSH_ERASE) FL_BANK SFR Address 0x94 Bit Field Name R/W W Data Sheet 71M6531D/F-71M6532D/F Description PGADDR (FLSH_PGADR[5:0]) FLSHCRL IFLAGS INTBITS (INT0 … INT6) This register is used to initiate either the Flash Mass Erase cycle or the Flash Page Erase cycle. See the Flash Memory section for details. 0xB6[2:0] R/W Flash Bank Selection. Flash Page Erase Address register. Contains the flash memory page address (page 0 through page 127) that will be erased during the Page 0xB7 R/W Erase cycle (default = 0x00). Must be re-written for each new Page Erase cycle. Program Write Enable: 0: MOVX commands refer to XRAM FLSH_PWE 0xB2[0] R/W Space, normal operation (default). 1: MOVX @DPTR,A moves A to Program Space (Flash) @ DPTR. Mass Erase Enable: 0: Mass Erase disabled (default). FLSH_MEEN 0xB2[1] W 1: Mass Erase enabled. Must be re-written for each new Mass Erase cycle. Enables security provisions that prevent external reading of flash memory and CE program RAM. SECURE 0xB2[6] R/W This bit is reset on chip reset and may only be set. Attempts to write zero are ignored. PREBOOT 0xB2[7] R Indicates that the preboot sequence is active. This flag monitors the XFER_BUSY interrupt. IE_XFER 0xE8[0] R/W It is set by hardware and must be cleared by the interrupt handler. This flag monitors the RTC_1SEC interrupt. It IE_RTC 0xE8[1] R/W is set by the hardware and must be cleared by the interrupt handler. This flag indicates that a flash write was in FWCOL1 0xE8[2] R/W progress while the CE was busy. This flag indicates that a flash write was FWCOL0 0xE8[3] R/W attempted when the CE was attempting to begin a code pass. This flag indicates that the wake-up pushbutton IE_PB 0xE8[4] R/W was pressed. This flag indicates that the MPU was awakened IE_WAKE 0xE8[5] R/W by the autowake timer. PLL_RISE Interrupt Flag: PLL_RISE 0xE8[6] R/W Write 0 to clear the PLL_RISE interrupt flag. PLL_FALL Interrupt Flag: PLL_FALL 0xE8[7] R/W Write 0 to clear the PLL_FALL interrupt flag. Interrupt inputs. The MPU may read these bits to see the status of external interrupts INT0 up 0xF8[6:0] INT6 … INT0 R to INT6. These bits do not have any memory and are primarily intended for debug use. WD_RST 0xF8[7] W The WDT is reset when a 1 is written to this bit. Only byte operations on the entire INTBITS register should be used when writing. The byte must have all bits set except the bits that are to be cleared. © 2005-2010 TERIDIAN Semiconductor Corporation 25 v1.3 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 1.4.5 Instruction Set All instructions of the generic 8051 microcontroller are supported. A complete list of the instruction set and of the associated op-codes is contained in the 71M653X Software User’s Guide (SUG). 1.4.6 UARTs The 71M6531D/F and 71M6532D/F include a UART (UART0) that can be programmed to communicate with a variety of AMR modules. A second UART (UART1) is connected to the optical port, as described in Section 1.5.6 Optical Interface. The UARTs are dedicated 2-wire serial interfaces, which can communicate with an external host processor at up to 38,400 bits/s (with MPU clock = 1.2288 MHz). The operation of the RX and TX UART0 pins is as follows: • • UART0 RX: Serial input data are applied at this pin. Conforming to RS-232 standard, the bytes are input LSB first. UART0 TX: This pin is used to output the serial data. The bytes are output LSB first. The 71M6531D/F and 71M6532D/F have several UART-related registers for the control and buffering of serial data. A single SFR register serves as both the transmit buffer and receive buffer (S0BUF, SFR 0x99 for UART0 and S1BUF, SFR 0x9C for UART1). When written by the MPU, S0BUF and S1BUF act as transmit buffers for their respective channels, and when read by the MPU, they act as receive buffers. Writing data to the transmit buffer starts the transmission by the associated UART. Received data are available by reading from the receive buffer. Both UARTs can simultaneously transmit and receive data. WDCON[7] (SFR 0xD8) selects whether timer 1 or the internal baud rate generator is used. All UART transfers are programmable for parity enable, parity, 2 stop bits/1 stop bit and XON/XOFF options for variable communication baud rates from 300 to 38400 bps. Table 15 shows how the baud rates are calculated. Table 16 shows the selectable UART operation modes. Table 15: Baud Rate Generation Using Timer 1 (WDCON[7] = 0) 2smod * fCKMPU/ (384 * (256-TH1)) N/A Using Internal Baud Rate Generator (WDCON[7] = 1) 2smod * fCKMPU/(64 * (210-S0REL)) fCKMPU/(32 * (210-S1REL)) UART0 UART1 S0REL and S1REL are 10-bit values derived by combining bits from the respective timer reload registers (S0RELL, S0RELH, S1RELL, S1RELH). SMOD is the SMOD bit in the SFR PCON register. TH1 is the high byte of timer 1. Table 16: UART Modes UART 0 Mode 0 Mode 1 Mode 2 Mode 3 N/A Start bit, 8 data bits, stop bit, variable baud rate (internal baud rate generator or timer 1) Start bit, 8 data bits, parity, stop bit, fixed baud rate 1/32 or 1/64 of fCKMPU Start bit, 8 data bits, parity, stop bit, variable baud rate (internal baud rate generator or timer 1) UART 1 Start bit, 8 data bits, parity, stop bit, variable baud rate (internal baud rate generator) Start bit, 8 data bits, stop bit, variable baud rate (internal baud rate generator) N/A N/A Parity of serial data is available through the P flag of the accumulator. 7-bit serial modes with parity, such as those used by the FLAG protocol, can be simulated by setting and reading bit 7 of 8-bit output data. 7-bit serial modes without parity can be simulated by setting bit 7 to a constant 1. 8-bit serial modes with parity can be simulated by setting and reading the 9th bit, using the control bits TB80 (S0CON[3]) and TB81 (S1CON[3]) in the S0CON (SFR 0x98) and S1CON (SFR 0x9B) SFRs for transmit and RB81 (S1CON[2]) for receive operations. 26 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F The feature of receiving 9 bits (Mode 3 for UART0, Mode A for UART1) can be used as handshake signals for inter-processor communication in multi-processor systems. In this case, the slave processors have bit SM20 (S0CON[5]) for UART0, or SM21 (S1CON[5] for UART1, set to 1. When the master processor outputs the slave’s address, it sets the 9th bit to 1, causing a serial port receive interrupt in all the slaves. The slave processors compare the received byte with their address. If there is a match, the addressed slave will clear SM20 or SM21 and receive the rest of the message. All other slaves will ignore the message. After addressing the slave, the host outputs the rest of the message with the 9th bit set to 0, so no additional serial port receive interrupts will be generated. UART Control Registers: The functions of UART0 and UART1 depend on the setting of the Serial Port Control Registers S0CON and S1CON shown in Table 17 and Table 18, respectively and the PCON register shown in Table 19. Since the TI0, RI0, TI1 and RI1 bits are in an SFR bit addressable byte, common practice would be to clear them with a bit operation, but this must be avoided. The hardware implements bit operations as a byte wide read-modify-write hardware macro. If an interrupt occurs after the read, but before the write, its flag will be cleared unintentionally. The proper way to clear these flag bits is to write a byte mask consisting of all ones except for a zero in the location of the bit to be cleared. The flag bits are configured in hardware to ignore ones written to them. Table 17: The S0CON (UART0) Register (SFR 0x98) Bit S0CON[7] Symbol SM0 Function The SM0 and SM1 bits set the UART0 mode: Mode Description SM0 SM1 0 N/A 0 0 1 8-bit UART 0 1 2 9-bit UART 1 0 3 9-bit UART 1 1 Enables the inter-processor communication feature. If set, enables serial reception. Cleared by software to disable reception. The 9th transmitted data bit in Modes 2 and 3. Set or cleared by the MPU, depending on the function it performs (parity check, multiprocessor communication etc.) In Modes 2 and 3 it is the 9th data bit received. In Mode 1, SM20 is 0, RB80 is the stop bit. In mode 0, this bit is not used. Must be cleared by software. Transmit interrupt flag; set by hardware after completion of a serial transfer. Must be cleared by software. Receive interrupt flag; set by hardware after completion of a serial reception. Must be cleared by software. Table 18: The S1CON (UART1) register (SFR 0x9B) Bit Symbol Function Sets the baud rate and mode for UART1. SM Mode Description Baud Rate 0 A 9-bit UART variable 1 B 8-bit UART variable Enables the inter-processor communication feature. If set, enables serial reception. Cleared by software to disable reception. The 9th transmitted data bit in Mode A. Set or cleared by the MPU, depending on the function it performs (parity check, multiprocessor communication etc.) © 2005-2010 TERIDIAN Semiconductor Corporation 27 S0CON[6] S0CON[5] S0CON[4] S0CON[3] SM1 SM20 REN0 TB80 S0CON[2] S0CON[1] S0CON[0] RB80 TI0 RI0 S1CON[7] SM S1CON[5] S1CON[4] S1CON[3] v1.3 SM21 REN1 TB81 Data Sheet 71M6531D/F-71M6532D/F Bit S1CON[2] S1CON[1] S1CON[0] Symbol RB81 TI1 RI1 FDS 6531/6532 005 Function In Modes A and B, it is the 9th data bit received. In Mode B, if SM21 is 0, RB81 is the stop bit. Must be cleared by software Transmit interrupt flag, set by hardware after completion of a serial transfer. Must be cleared by software. Receive interrupt flag, set by hardware after completion of a serial reception. Must be cleared by software. Table 19: PCON Register Bit Description (SFR 0x87) Bit PCON[7] PCON[6:2] PCON[1] PCON[0] – STOP IDLE Symbol SMOD Not used. Stops MPU flash access and MPU peripherals including timers and UARTs when set until an external interrupt is received. Stops MPU flash access when set until an internal interrupt is received. Function The SMOD bit doubles the baud rate when set 1.4.7 Timers and Counters The 80515 has two 16-bit timer/counter registers: Timer 0 and Timer 1. These registers can be configured for counter or timer operations. In timer mode, the register is incremented every 12 MPU clock cycles. In counter mode, the register is incremented when the falling edge is observed at the corresponding input signal T0 or T1 (T0 and T1 are the timer gating inputs derived from certain DIO pins, see Section 1.5.7 Digital I/O). Since it takes 2 machine cycles to recognize a 1-to-0 event, the maximum input count rate is 1/2 of the clock frequency (CKMPU). There are no restrictions on the duty cycle, however to ensure proper recognition of the 0 or 1 state, an input should be stable for at least 1 machine cycle. Four operating modes can be selected for Timer 0 and Timer 1, as shown in Table 20 and Table 21. The TMOD Register, shown in Table 22, is used to select the appropriate mode. The timer/counter operation is controlled by the TCON Register, which is shown in Table 23. Bits TR1 (TCON[6]) and TR0 (TCON[4]) in the TCON register start their associated timers when set. Table 20: Timers/Counters Mode Description M1 0 0 1 M0 0 1 0 Mode Mode 0 Mode 1 Mode 2 Function 13-bit Counter/Timer mode with 5 lower bits in the TL0 or TL1 register and the remaining 8 bits in the TH0 or TH1 register (for Timer 0 and Timer 1, respectively). The 3 high order bits of TL0 and TL1 are held at zero. 16-bit Counter/Timer mode. 8-bit auto-reload Counter/Timer. The reload value is kept in TH0 or TH1, while TL0 or TL1 is incremented every machine cycle. When TL(x) overflows, a value from TH(x) is copied to TL(x) (where x = 0 for counter/timer 0 or 1 for counter/timer 1. If Timer 1 M1 and M0 bits are set to 1, Timer 1 stops. If Timer 0 M1 and M0 bits are set to 1, Timer 0 acts as two independent 8-bit Timer/Counters. 1 1 Mode 3 In Mode 3, TL0 is affected by TR0 and gate control bits and sets the TF0 flag on overflow, while TH0 is affected by the TR1 bit and the TF1 flag is set on overflow. Table 21 specifies the combinations of operation modes allowed for Timer 0 and Timer 1. 28 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F Table 21: Allowed Timer/Counter Mode Combinations Mode 0 Yes Yes Not allowed Timer 1 Mode 1 Yes Yes Not allowed Mode 2 Yes Yes Yes Timer 0 - mode 0 Timer 0 - mode 1 Timer 0 - mode 2 Table 22: TMOD Register Bit Description (SFR 0x89) Bit Symbol Timer/Counter 1: Function If TMOD[7] is set, external input signal control is enabled for Counter 0. external gate control. The TR1 bit in the TCON register (SFR 0x88) must also be set in order for Counter 1 to increment. With these settings Counter 1 is incremented on every falling edge of the logic signal applied to one or more of the interrupt sources controlled by the DI_RBP, DIO_R1, … DIO_RXX registers. Selects timer or counter operation. When set to 1, a counter operation is performed. When cleared to 0, the corresponding register will function as a timer. Selects the mode for Timer/Counter 1 as shown in Table 20. If TMOD[3] is set, external input signal control is enabled for Counter 0. external gate control. The TR0 bit in the TCON register (SFR 0x88) must also be set in order for Counter 0 to increment. With these settings Counter 0 is incremented on every falling edge of the logic signal applied to one or more of the interrupt sources controlled by the DI_RBP, DIO_R1, … DIO_RXX registers. Selects timer or counter operation. When set to 1, a counter operation is performed. When cleared to 0, the corresponding register will function as a timer. Selects the mode for Timer/Counter 0, as shown in Table 20. TMOD[7] Gate TMOD[6] C/T TMOD[5:4] M1:M0 Timer/Counter 0: TMOD[3] Gate TMOD[2] TMOD[1:0] C/T M1:M0 Table 23: The TCON Register Bit Functions (SFR 0x88) Bit TCON[7] TCON[6] TCON[5] TCON[4] TCON[3] TCON[2] TCON[1] TCON[0] Symbol TF1 TR1 TF0 TR0 IE1 IT1 IE0 IT0 Function The Timer 1 overflow flag is set by hardware when Timer 1 overflows. This flag can be cleared by software and is automatically cleared when an interrupt is processed. Timer 1 run control bit. If cleared, Timer 1 stops. Timer 0 overflow flag set by hardware when Timer 0 overflows. This flag can be cleared by software and is automatically cleared when an interrupt is processed. Timer 0 Run control bit. If cleared, Timer 0 stops. Interrupt 1 edge flag is set by hardware when the falling edge on external pin int1 is observed. Cleared when an interrupt is processed. Interrupt 1 type control bit. Selects either the falling edge or low level on input pin to cause an interrupt. Interrupt 0 edge flag is set by hardware when the falling edge on external pin int0 is observed. Cleared when an interrupt is processed. Interrupt 0 type control bit. Selects either the falling edge or low level on input pin to cause interrupt. v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 29 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 1.4.8 WD Timer (Software Watchdog Timer) There is no internal software watchdog timer. Use the standard watchdog timer instead (see 1.5.16 Hardware Watchdog Timer). 1.4.9 Interrupts The 80515 MPU provides 11 interrupt sources with four priority levels. Each source has its own request flag(s) located in a special function register (TCON, IRCON and SCON). Each interrupt requested by the corresponding flag can be individually enabled or disabled by the enable bits in SFRs IEN0 (SFR 0xA8), IEN1 (SFR 0xB8), and IEN2 (SFR 0x9A). Figure 8 shows the device interrupt structure. Referring to Figure 8, interrupt sources can originate from within the 80515 MPU core (referred to as Internal Sources) or can originate from other parts of the 71M653x SoC (referred to as External Sources). There are seven external interrupt sources, as seen in the leftmost part of Figure 8 , and in Table 24 and Table 25 (i.e., EX0-EX6). Interrupt Overview When an interrupt occurs, the MPU will vector to the predetermined address as shown in Table 36. Once the interrupt service has begun, it can be interrupted only by a higher priority interrupt. The interrupt service is terminated by a return from instruction, RETI. When an RETI is performed, the processor will return to the instruction that would have been next when the interrupt occurred. When the interrupt condition occurs, the processor will also indicate this by setting a flag bit. This bit is set regardless of whether the interrupt is enabled or disabled. Each interrupt flag is sampled once per machine cycle, after that, samples are polled by the hardware. If the sample indicates a pending interrupt when the interrupt is enabled, then the interrupt request flag is set. On the next instruction cycle, the interrupt will be acknowledged by hardware forcing an LCALL to the appropriate vector address, if the following conditions are met: • • • No interrupt of equal or higher priority is already in progress. An instruction is currently being executed and is not completed. The instruction in progress is not RETI or any write access to the registers IEN0, IEN1, IEN2, IP0 or IP1. Special Function Registers for Interrupts The following SFR registers control the interrupt functions: • • • • The interrupt enable registers: IEN0, IEN1 and IEN2 (see Table 24, Table 25 and Table 26. The Timer/Counter control registers, TCON and T2CON (see Table 27 and Table 28). The interrupt request register, IRCON (see Table 29). The interrupt priority registers: IP0 and IP1 (see Table 34). Table 24: The IEN0 Bit Functions (SFR 0xA8) Bit IEN0[7] IEN0[6] IEN0[5] IEN0[4] IEN0[3] IEN0[2] IEN0[1] IEN0[0] Symbol EAL WDT – ES0 ET1 EX1 ET0 EX0 Function EAL = 0 disables all interrupts. Not used for interrupt control. Not Used. ES0 = 0 disables serial channel 0 interrupt. ET1 = 0 disables timer 1 overflow interrupt. EX1 = 0 disables external interrupt 1. ET0 = 0 disables timer 0 overflow interrupt. EX0 = 0 disables external interrupt 0. 30 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F Table 25: The IEN1 Bit Functions (SFR 0xB8) Bit IEN1[7] IEN1[6] IEN1[5] IEN1[4] IEN1[3] IEN1[2] IEN1[1] IEN1[0] Symbol – – EX6 EX5 EX4 EX3 EX2 – Function Not used. Not used. EX6 = 0 disables external interrupt 6: XFER_BUSY, RTC_1SEC, WD_NROVF EX5 = 0 disables external interrupt 5: EEPROM_BUSY EX4 = 0 disables external interrupt 4: PLL_OK (rise), PLL_OK (fall) EX3 = 0 disables external interrupt 3: CE_BUSY EX2 = 0 disables external interrupt 2: FWCOL0, FWCOL1, SPI Not Used. Table 26: The IEN2 Bit Functions (SFR 0x9A) Bit IEN2[0] Symbol ES1 Function ES1 = 0 disables the serial channel 1 interrupt. Table 27: TCON Bit Functions (SFR 0x88) Bit TCON[7] TCON[6] TCON[5] TCON[4] TCON[3] TCON[2] TCON[1] TCON[0] Symbol TF1 TR1 TF0 TR0 IE1 IT1 IE0 IT0 Function Timer 1 overflow flag. Not used for interrupt control. Timer 0 overflow flag. Not used for interrupt control. External interrupt 1 flag. External interrupt 1 type control bit: 0 = interrupt on low level. 1 = interrupt on falling edge. External interrupt 0 flag External interrupt 0 type control bit: 0 = interrupt on low level. 1 = interrupt on falling edge. Table 28: The T2CON Bit Functions (SFR 0xC8) Bit T2CON[7] T2CON[6] Symbol – I3FR Function Not used. Polarity control for external interrupt 3: CE_BUSY 0 = falling edge. 1 = rising edge. Polarity control for external interrupt 2: FWCOL0, FWCOL1, SPI 0 = falling edge. 1 = rising edge. Not used. Table 29: The IRCON Bit Functions (SFR 0xC0) T2CON[5] T2CON[4:0] I2FR – Bit IRCON[7] IRCON[6] IRCON[5] IRCON[4] IRCON[3] IRCON[2] v1.3 Symbol – – IEX6 IEX5 IEX4 IEX3 Function Not used Not used 1 = External interrupt 6 occurred and has not been cleared. 1 = External interrupt 5 occurred and has not been cleared. 1 = External interrupt 4 occurred and has not been cleared. 1 = External interrupt 3 occurred and has not been cleared. © 2005-2010 TERIDIAN Semiconductor Corporation 31 Data Sheet 71M6531D/F-71M6532D/F IRCON[1] IRCON[0] IEX2 – FDS 6531/6532 005 1 = External interrupt 2 occurred and has not been cleared. Not used. TF0 and TF1 (Timer 0 and Timer 1 overflow flags) will be automatically cleared by hardware when the service routine is called (Signals T0ACK and T1ACK – port ISR – active high when the service routine is called). External MPU Interrupts The seven external interrupts are the interrupts external to the 80515 core, i.e. signals that originate in other parts of the 71M6531D/F or 71M6532D/F, for example the CE, DIO, RTC or EEPROM interface. The external interrupts are connected as described in Table 30. The polarity of interrupts 2 and 3 is programmable in the MPU via the I3FR and I2FR bits in T2CON (SFR 0xC8). Interrupts 2 and 3 should be programmed for falling sensitivity (I3FR = I2FR = 0). The generic 8051 MPU literature states that interrupts 4 through 6 are defined as rising-edge sensitive. Thus, the hardware signals attached to interrupts 5 and 6 are inverted to achieve the edge polarity shown in Table 30. Table 30: External MPU Interrupts External Interrupt 0 1 2 3 4 5 6 Connection Digital I/O High Priority Digital I/O Low Priority FWCOL0, FWCOL1, SPI CE_BUSY PLL_OK (rising), PLL_OK (falling) EEPROM busy XFER_BUSY, RTC_1SEC or WD_NROVF Polarity see Section 1.5.7 see Section 1.5.7 falling falling rising falling falling Flag Reset automatic automatic automatic automatic automatic automatic manual External interrupt 0 and 1 can be mapped to pins on the device using DIO resource maps. See Section 1.5.7 Digital I/O for more information. FWCOLx interrupts occur when the CE collides with a flash write attempt. See the Flash Write description in the Flash Memory section for more detail. SFR enable bits must be set to permit any of these interrupts to occur. Likewise, each interrupt has its own flag bit, which is set by the interrupt hardware, and reset by the MPU interrupt handler. XFER_BUSY, RTC_1SEC, WD_NROVF, FWCOL0, FWCOL1, SPI, PLLRISE and PLLFALL have their own enable and flag bits in addition to the interrupt 6, 4 and enable and flag bits (see Table 31). IE0 through IEX6 are cleared automatically when the hardware vectors to the interrupt handler. The other flags, IE_XFER through IE_PB, are cleared by writing a zero to them. Since these bits are in an SFR bit addressable byte, common practice would be to clear them with a bit operation, but this must be avoided. The hardware implements bit operations as a byte-wide read-modify-write hardware macro. If an interrupt occurs after the read, but before the write, its flag will be cleared unintentionally. The proper way to clear the flag bits is to write a byte mask consisting of all ones except for a zero in the location of the bit to be cleared. The flag bits are configured in hardware to ignore ones written to them. Table 31: Interrupt Enable and Flag Bits Interrupt Enable Name Location SFR A8[0] SFR A8[2] SFR B8[1] SFR B8[2] Interrupt Flag Name Location IE0 SFR 88[1] IE1 SFR 88[3] IEX2 SFR C0[1] IEX3 SFR C0[2] Interrupt Description External interrupt 0 External interrupt 1 External interrupt 2 External interrupt 3 v1.3 EX0 EX1 EX2 EX3 32 © 2005-2010 TERIDIAN Semiconductor Corporation FDS 6531/6532 005 Interrupt Enable Name Location EX4 SFR B8[3] EX5 SFR B8[4] EX6 SFR B8[5] EX_XFER 2002[0] EX_RTC 2002[1] IEN_WD_NROVF 20B0[0] IEN_SPI 20B0[4] EX_FWCOL EX_PLL 2007[4] 2007[5] Data Sheet 71M6531D/F-71M6532D/F Interrupt Flag Name Location IEX4 SFR C0[3] IEX5 SFR C0[4] IEX6 SFR C0[5] IE_XFER SFR E8[0] IE_RTC SFR E8[1] WD_NROVF_FLAG 20B1[0] SPI_FLAG 20B1[4] IE_FWCOL0 SFR E8[3] IE_FWCOL1 SFR E8[2] IE_PLLRISE SFR E8[6] IE_PLLFALL SFR E8[7] IE_WAKE SFR E8[5] IE_PB SFR E8[4] Interrupt Description External interrupt 4 External interrupt 5 External interrupt 6 XFER_BUSY interrupt (INT 6) RTC_1SEC interrupt (INT 6) WDT near overflow (INT 6) SPI Interface (INT2) FWCOL0 interrupt (INT 2) FWCOL1 interrupt (INT 2) PLL_OK rise interrupt (INT 4) PLL_OK fall interrupt (INT 4) AUTOWAKE flag† PB flag† The AUTOWAKE and PB flag bits are shown in Table 31 because they behave similarly to interrupt flags, even though they are not actually related to an interrupt. These bits are set by hardware when the MPU wakes from a push button or wake timeout. The bits are reset by writing a zero. Note that the PB flag is set whenever the PB is pushed, even if the part is already awake. Interrupt Priority Level Structure All interrupt sources are combined in groups, as shown in Table 32: Table 32: Interrupt Priority Level Groups Group 0 1 2 3 4 5 Group Members External interrupt 0, Serial channel 1 interrupt Timer 0 interrupt, External interrupt 2 External interrupt 1, External interrupt 3 Timer 1 interrupt, External interrupt 4 Serial channel 0 interrupt, External interrupt 5 External interrupt 6 † Each group of interrupt sources can be programmed individually to one of four priority levels (as shown in Table 33) by setting or clearing one bit in the SFR interrupt priority register IP0 and one in IP1 (Table 34). If requests of the same priority level are received simultaneously, an internal polling sequence as shown in Table 35 determines which request is serviced first. Changing interrupt priorities while interrupts are enabled can easily cause software defects. It is best to set the interrupt priority registers only once during initialization before interrupts are enabled. Table 33: Interrupt Priority Levels IP1[x] 0 0 1 1 IP0[x] 0 1 0 1 Priority Level Level 0 (lowest) Level 1 Level 2 Level 3 (highest) v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 33 Data Sheet 71M6531D/F-71M6532D/F Table 34: Interrupt Priority Registers (IP0 and IP1) Register IP0 IP1 Address SFR 0xA9 SFR 0xB9 Bit 7 (MSB) – – Bit 6 – – Bit 5 IP0[5] IP1[5] Bit 4 IP0[4] IP1[4] Bit 3 IP0[3] IP1[3] Bit 2 IP0[2] IP1[2] FDS 6531/6532 005 Bit 1 IP0[1] IP1[1] Bit 0 (LSB) IP0[0] IP1[0] Table 35: Interrupt Polling Sequence External interrupt 0 Serial channel 1 interrupt Timer 0 interrupt External interrupt 2 External interrupt 1 External interrupt 3 Timer 1 interrupt External interrupt 4 Serial channel 0 interrupt External interrupt 5 External interrupt 6 Interrupt Sources and Vectors Table 36 shows the interrupts with their associated flags and vector addresses. Table 36: Interrupt Vectors Interrupt Request Flag IE0 TF0 IE1 TF1 RI0/TI0 RI1/TI1 IEX2 IEX3 IEX4 IEX5 IEX6 Description External interrupt 0 Timer 0 interrupt External interrupt 1 Timer 1 interrupt Serial channel 0 interrupt Serial channel 1 interrupt External interrupt 2 External interrupt 3 External interrupt 4 External interrupt 5 External interrupt 6 Interrupt Vector Address 0x0003 0x000B 0x0013 0x001B 0x0023 0x0083 0x004B 0x0053 0x005B 0x0063 0x006B 34 © 2005-2010 TERIDIAN Semiconductor Corporation Polling sequence v1.3 FDS 6531/6532 005 Individual Enable Bits Individual Flags Logic and Polarity Selection Interrupt Flags Data Sheet 71M6531D/F-71M6532D/F Interrupt Enable Priority Assignment No. External Source Internal Source DIO status changed IEN0.7 (EAL) IEN0.0 (EX0) 0 DIO DIO_Rn TCON.1 (IE0) IT0 byte received UART1 (optical) S1CON.0 (RI1) >=1 S1CON.1 (TI1) IEN2.0 (ES1) IP1.0/ IP0.0 byte transmitted IEN0.1 (ET0) Timer 0 SPI I/F 2 Write attempt, CE Flash busy Write CE code start, Collision flash write busy overflow occurred TCON.5 (TF0) SPI_FLAG >=1 IE_FWCOL0 I2FR IEN_SPI IEN1.1 (EX2) IRCON.1 (IEX2) IEN0.2 (EX1) IEN1.2 (EX3) I3FR IP1.1/ IP0.1 EX_FWCOL IE_FWCOL1 DIO_Rn TCON.3 (IE1) IRCON.2 (IEX3) 1 3 DIO CE_BUSY DIO status changed IP1.2/ IP0.2 CE completed code run and has new status information overflow occurred IEN0.3 (ET1) TCON.7 (TF1) IEN1.3 (EX4) >=1 IRCON.3 (IEX4) IEN0.4 (ES0) >=1 S0CON.0 (TI0) IE_EEX >=1 IE_SPI IE_XFER IE_RTC WD_NROVF_FLAG Flag=1 means that an interrupt has occurred and has not been cleared EX0 – EX6 are cleared automatically when the hardware vectors to the interrupt handler 2/2/2009 Timer 1 4 PLL OK PLL status changed IE_PLLRISE EX_PLL IE_PLLFALL byte received IP1.3/ IP0.3 S0CON.0 (RI0) UART0 byte transmitted BUSY fell command received accumulation cycle completed every second WDT near overflow IEN1.4 (EX5) IRCON.4 (IEX5) IP1.4/ IP0.4 EEPROM 5 I2C XFER_BUSY EX_EEX EX_SPI EX_XFER EX_RTC IEN_NR_ WDOVF IEN1.5 (EX6) >=1 IRCON.5 (IEX6) IP1.5/ IP0.5 6 RTC_1S NR_OVF Interrupt Vector MPU-external sources MPU-internal sources Figure 8: Interrupt Structure v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation Polling Sequence 35 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 1.5 1.5.1 On-Chip Resources Oscillator The oscillator of the 71M6531D/F and 71M6532D/F drives a standard 32.768 kHz watch crystal. These crystals are accurate and do not require a high-current oscillator circuit. The oscillator of the 71M6531D/F and 71M6532D/F has been designed specifically to handle these crystals and is compatible with their high impedance and limited power handling capability. Oscillator calibration can improve the accuracy of both the RTC and metering. Refer to Section 1.5.3 Real-Time Clock (RTC) for more information. The oscillator is powered directly and only from VBAT, which therefore must be connected to a DC voltage source. The oscillator requires approximately 100 nA, which is negligible compared to the internal leakage of a battery. The oscillator may appear to work when VBAT is not connected, but this mode of operation is not recommended. If VBAT is connected to a drained battery or disconnected, a battery test that sets BME may drain VBAT’s supply and cause the oscillator to stop. A stopped oscillator may force the device to reset. Therefore, an unexpected reset during a battery test should be interpreted as a battery failure. 1.5.2 Internal Clocks Timing for the device is derived from the 32.768 kHz crystal oscillator output. On-chip timing functions include: • • • • • The MPU clock (CKMPU) The emulator clock (2 x CKMPU) The clock for the CE (CKCE) The clock driving the delta-sigma ADC along with the FIR (CKADC, CKFIR) A real time clock (RTC). The two general-purpose counter/timers contained in the MPU are controlled by CKMPU (see Section 1.4.7 Timers and Counters). Table 37 provides a summary of the available clock functions. Table 37: Clock System Summary Clock CKPLL MCK CKCE CKADC / CKFIR CKMPU maximum Derived From Crystal CKPLL MCK MCK MCK MCK Divider / [M40MHZ, M26MHZ] ÷2 / [1,0] 78.6432 MHz 39.3216 MHz 9.8304 4.9152 MHz † MHz † 4.9152 MHz 9.8304 MHz *** ÷3 / [0,1] 78.6432 MHz 26.2144 MHz 6.5536MHz 6.5536 MHz 6.5536 MHz *** ÷4** / [0,0] 78.6432 MHz 19.6608 MHz 4.9152 MHz 4.9152 MHz 4.9152 MHz *** Brownout Mode off 112 kHz off 28 kHz 28 kHz CK32 MCK 32.768 kHz 32.768 kHz 32.768 kHz ** Default state at power-up *** The maximum CKMPU frequency. CKMPU can be reduced from this rate using MPU_DIV[2:0]. † CKCE = 9.8304 MHz when CE10MHZ is set, 4.9152 MHz otherwise. The master clock, MCK, is generated by an on-chip PLL that multiplies the oscillator output frequency (CK32) by 2400 to provide approximately 80 MHz (78.6432 MHz). A divider controlled by the I/O RAM bits M40MHZ and M26MHZ permits scaling of MCK by ½, ⅓ and ¼. All other clocks are derived from this scaled MCK output (making them multiples of 32768 Hz), and the clock skew is matched so that the rising edges of CKADC, CKCE, CK32 and CKMPU are aligned. 36 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F The PLL generates a 2x emulator clock which is controlled by the ECK_DIS bit. Since clock noise from this feature may disturb the ADC, it is recommended that this option be avoided when possible. The MPU clock frequency CKMPU is determined by another divider controlled by the I/O RAM field MPU_DIV[2:0] and can be set to MCK/2(MPU_DIV+2) Hz where MPU_DIV[2:0] varies from 0 to 6. The circuit also generates the 2 x CKMPU clock for use by the emulator. The emulator clock is not generated when ECK_DIS is asserted. During a power-on reset, [M40MHZ, M26MHZ] defaults to [0,0] and the MCK divider is set to divide by 4. When [M40MHZ, M26MHZ] = [1,0], the CE clock frequency may be set to ~5 MHz (4.9152 MHz) or ~10 MHz (9.8304 MHz), using the I/O RAM register CE10MHZ. In this mode, the ADC and FIR clock frequencies remain at ~ 5 MHz. When [M40MHZ, M26MHZ] = [0,1], the CE, ADC, FIR and MPU clock frequencies are shifted to ~ 6.6 MHz (6.5536 MHz). This increases the ADC sample rate by 33%. CE codes are tailored to particular clock frequencies. Changing the clock frequency for a particular CE code may render it unusable. In sleep mode, the M40MHZ and M26MHZ inputs to the clock generator are forced low. In brownout mode, the clocks are derived from the crystal oscillator and the clock frequencies are scaled by 7/8. 1.5.3 Real-Time Clock (RTC) The RTC is driven directly by the crystal oscillator. It is powered by the net RTC_NV (battery-backed up supply). The RTC consists of a counter chain and output registers. The counter chain consists of registers for seconds, minutes, hours, day of week, day of month, month and year. The RTC is capable of processing leap years. Each counter has its own output register. Whenever the MPU reads the seconds register, all other output registers are automatically updated. Since the RTC clock (RTCLK) is not coherent to the MPU clock, the MPU must read the seconds register until two consecutive reads are the same (this requires either 2 or 3 reads). At this point, all RTC output registers will have the correct time. Regardless of the MPU clock speed, RTC reads require one wait state. RTC time is set by writing to the registers RTC_SEC[5:0] through RTC_YR. Each write operation must be preceded by a write operation to the WE register in I/O RAM. The value written to the WE register is unimportant. Time adjustments are written to the RTCA_ADJ[6:0], PREG[16:0] and QREG[1:0] registers. Updates to PREG[16:0] and QREG[1:0] must occur after the one second interrupt and must be finished before reaching the next one second boundary. The new values are loaded into the counters at the next one second boundary. PREG[16:0] and QREG[1:0] are separate registers in the device hardware, but the bits are 16-bit contiguous so the MPU firmware can treat them as a single register. A single binary number can be calculated and then loaded into them at the same time. The 71M6531D/F and 71M6532D/F have two rate adjustment mechanisms. The first is an analog rate adjustment, using RTCA_ADJ[6:0], which trims the crystal load capacitance. Setting RTCA_ADJ[6:0] to 00 minimizes the load capacitance, maximizing the oscillator frequency. Setting RTCA_ADJ[6:0] to 0x3F maximizes the load capacitance, minimizing the oscillator frequency. The adjustable capacitance is approximately: C ADJ = RTCA _ ADJ ⋅ 16.5 pF 128 The maximum adjustment range is approximately-12 ppm to +22ppm. The precise amount of adjustment will depend on the crystal properties. The adjustment may occur at any time and the resulting clock frequency can be measured over a one-second interval. The second rate adjustment is a digital rate adjust using PREG[16:0] and QREG[1:0], which can be used to adjust the clock rate up to ± 988 ppm, with a resolution of 3.8 ppm. Updates must occur after a one second interrupt and must finish before the next one second boundary. The rate adjustment will be implemented starting at the next one second boundary. Since the LSB results in an adjustment every four seconds, the frequency should be measured over an interval that is a multiple of four seconds. v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 37 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 To adjust the clock rate using the digital rate adjust, the appropriate values must be written to PREG[16:0] and QREG[1:0]. The default frequency is 32,768 RTCLK cycles per second. To shift the clock frequency by ∆ ppm, calculate PREG[16:0] and QREG[1:0] using the following equation:   32768 ⋅ 8 4 ⋅ PREG + QREG = floor  + 0.5  −6   1 + ∆ ⋅ 10 For example, for a shift of -988 ppm, 4⋅PREG + QREG = 262403 = 0x40103. PREG[16:0] = 0x10040 and QREG[1:0] = 0x03. The default values of PREG[16:0] and QREG[1:0], corresponding to zero adjustment, are 0x10000 and 0x0, respectively. The RTC timing may be observed on the TMUXOUT pin by setting TMUX[4:0] to 0x10 or 0x11. Default values for RTCA_ADJ, PREG[16:0] and QREG[1:0] should be nominal values, at the center of the adjustment range. Extreme values (zero for example) can cause incorrect operation. If the crystal temperature coefficient is known, the MPU can integrate temperature and correct the RTC time as necessary. The sub-second register of the RTC, SUBSEC, can be read by the MPU after the one second interrupt and before reaching the next one second boundary. SUBSEC contains the count remaining, in 1/256 second nominal clock periods, until the next one second boundary. When the RST_SUBSEC bit is written, the SUBSEC counter is restarted. Reading and resetting the sub-second counter can be used as part of an algorithm to accurately set the RTC. When setting the RTC_SEC register, it is important to take into account that the associated write operation will be performed only in the next second boundary. 1.5.4 Temperature Sensor The device includes an on-chip temperature sensor for determining the temperature of the bandgap reference. If automatic temperature measurement is not performed by selecting CHOP_E[1:0] = 00, the MPU may request an alternate multiplexer frame containing the temperature sensor output by asserting MUX_ALT. The primary use of the temperature data is to determine the magnitude of compensation required to offset the thermal drift in the system (see Section 3.4 Temperature Compensation). 1.5.5 Physical Memory Flash Memory The 71M6531D and 71M6532D include 128 KB of on-chip flash memory. The 71M6531F and 71M6532F offer 256 KB of flash memory. The flash memory primarily contains MPU and CE program code. It also contains images of the CE and MPU data in RAM, as well as of I/O RAM. On power-up, before enabling the CE, the MPU copies these images to their respective locations. The flash memory is segmented into individually erasable pages that contain 1024 bytes. Flash space allocated for the CE program is limited to 4096 16-bit words (8 KB). The CE program must begin on a 1-KB boundary of the flash address space. The CE_LCTN[7:0] word defines which 1-KB boundary contains the CE code. Thus, the first CE instruction is located at 1024*CE_LCTN[7:0]. Flash Write Procedures The MPU may write to the flash memory. This is one of the non-volatile storage options available to the user in addition to external EEPROM. FLSH_PWE (flash program write enable) differentiates 80515 data store instructions (MOVX@DPTR,A) between Flash and XRAM write operations. This bit must be cleared by the MPU after each byte write operation. Write operations to this bit are inhibited when interrupts are enabled. The MPU cannot write to flash while the CE is executing its code from flash. Two interrupts warn of collisions between the MPU firmware and the CE timing. If a flash write operation is attempted while the CE is busy, the flash write will not execute and the FWCOL0 interrupt will be issued. If a flash write is still in progress when the CE would otherwise begin a code pass, the code pass is skipped, the write operation is completed, and the FWCOL1 interrupt is issued. 38 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F The simplest flash write procedure disables the CE during the write operation and interpolates the metering measurements. However, this results in the loss of at least one second of data, because the CE has to resynchronize with the mains voltage. There is a brief guaranteed interval (typically 1/32768 s) between CE executions which occurs 2520 times per second. The start of the interval can be detected with the CE_BUSY interrupt which occurs on the falling edge of CE_BUSY (an internal signal measurable from TMUXOUT). However, this guaranteed idle time (30.5 µs) is too short to write a byte which takes 42 µs or to erase a page of flash memory which takes at least 20 ms. Some CE code has substantially longer idle times, but in those cases, firmware interrupt latencies can easily consume the available write time. If a flash write fails in this scheme, the failure can be detected with the FWCOL0 or FWCOL1 interrupt and the write can be retried. It is practical to pre-erase pages, disable interrupts and poll the CE_BUSY interrupt flag, IRCON[2]. This method avoids problems with interrupt latency, but can still result in a write failure if the CE code takes to much time. As mentioned above, polling FWCOL0 and FWCOL1 can detect write failures. However, the speed in a polling write is only 2520 bytes per second and the firmware cannot respond to interrupts. As an alternative to using flash, a small EEPROM can store data without compromises. EEPROM interfaces are included in the device. Updating Individual Bytes in Flash Memory The original state of a flash byte is 0xFF (all ones). Once a value other than 0xFF is written to a flash memory cell, overwriting with a different value usually requires that the cell be erased first. Since cells cannot be erased individually, the page has to be copied to RAM, followed by a page erase. After this, the page can be updated in RAM and then written back to the flash memory. Flash Erase Procedures Flash erasure is initiated by writing a specific data pattern to specific SFR registers in the proper sequence. These special pattern/sequence requirements prevent inadvertent erasure of the flash memory. The mass erase sequence is: 1. Write 1 to the FLSH_MEEN bit (SFR 0xB2[1]). 2. Write pattern 0xAA to FLSH_ERASE (SFR 0x94). The mass erase cycle can only be initiated when the ICE port is enabled. The page erase sequence is: 1. Write the page address to FLSH_PGADR[5:0] (SFR 0xB7[7:1]). 2. Write pattern 0x55 to FLSH_ERASE (SFR 0x94). Bank-Switching: The program memory of the 71M6531 consists of a fixed lower bank of 32 KB addressable at 0x0000 to 0x7FFF plus an upper bank area of 32 KB, addressable at 0x8000 to 0xFFFF. The upper 32 KB space is banked using the I/O RAM FL_BANK register as follows: • • The 71M6531D provides 4 banks of 32 KB each selected by FL_BANK[1:0]. Note that when FL_BANK[1:0] = 00, the upper bank is the same as the lower bank. The 71M6531F and 71M6532D/F provide 8 banks of 32 KB each selected by FL_BANK[2:0]. Table 38 illustrates the bank switching mechanism. v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 39 Data Sheet 71M6531D/F-71M6532D/F Table 38: Bank Switching with FL_BANK[2:0] 71M6531D FL_BANK [1:0] 000 001 010 011 71M653XF FL_BANK [2:0] 000 001 010 011 100 101 110 111 Address Range for Lower Bank (0x000-0x7FFF) FDS 6531/6532 005 0x0000-0x7FFF Address Range for Upper Bank (0x8000-0xFFFF) 0x0000-0x7FFF 0x8000-0xFFFF 0x10000-0x17FFF 0x18000-0x1FFFF 0x20000-0x217FF 0x28000-0x2FFFF 0x30000-0x37FFF 0x38000-0x3FFFF Program Security When enabled, the security feature limits the ICE to global flash erase operations only. All other ICE operations are blocked. This guarantees the security of the user’s MPU and CE program code. Security should be enabled by MPU code that is executed during the pre-boot interval (60 CKMPU cycles before the primary boot sequence begins). Once security is enabled, the only way to disable it is to perform a global erase of the flash, followed by a chip reset. The first 60 cycles of the MPU boot code are called the pre-boot phase because during this phase the ICE is inhibited. A read-only status bit, PREBOOT, identifies these cycles to the MPU. Upon completion of pre-boot, the ICE can be enabled and is permitted to take control of the MPU. The security enable bit, SECURE, is reset whenever the chip is reset. Hardware associated with the bit permits only ones to be written to it. Thus, pre-boot code may set SECURE to enable the security feature but may not reset it. Once SECURE is set, the pre-boot code is protected and no external read of program code is possible Specifically, when SECURE is set, the following applies: • • • The ICE is limited to bulk flash erase only. Page zero of flash memory, the preferred location for the user’s pre-boot code, may not be page-erased by either MPU or ICE. Page zero may only be erased with global flash erase. Write operations to page zero, whether by MPU or ICE are inhibited. MPU/CE RAM: The 71M6531D/F and 71M6532D/F include 4 KB of static RAM memory on-chip (XRAM) plus 256-bytes of internal RAM in the MPU core. The 4 KB of static RAM are used for data storage for MPU and CE operations. 1.5.6 Optical Interface The device includes an interface to implement an IR/optical port. The pin OPT_TX is designed to directly drive an external LED for transmitting data on an optical link. The pin OPT_RX has the same threshold as the RX pin, but can also be used to sense the input from an external photo detector used as the receiver for the optical link. OPT_TX and OPT_RX are connected to a dedicated UART port (UART1). The OPT_TX and OPT_RX pins can be inverted with configuration bits OPT_TXINV and OPT_RXINV, respectively. Additionally, the OPT_TX output may be modulated at 38 kHz. Modulation is available when system power is present (i.e. not in BROWNOUT mode). The OPT_TXMOD bit enables modulation. Duty cycle is controlled by OPT_FDC[1:0], which can select 50%, 25%, 12.5% and 6.25% duty cycle. 6.25% duty cycle means OPT_TX is low for 6.25% of the period. Figure 9 illustrates the OPT_TX generator. When not needed for the optical UART, the OPT_TX pin can alternatively be configured as DIO2, WPULSE, or VARPULSE. The configuration bits are OPT_TXE[1:0]. Likewise, OPT_RX can alternately be configured as DIO1. Its control is OPT_RXDIS. 40 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 VARPULSE WPULSE from OPT_TX UART OPT_TXINV OPT_TXMOD OPT_FDC OPT_TXMOD = 0 A B A B A EN 2 MOD DUTY DIO2 B Data Sheet 71M6531D/F-71M6532D/F 3 2 1 0 OPT_TXE[1:0] OPT_TXMOD = 1, OPT_FDC = 2 (25%) Internal OPT_TX V3P3 1/38kHz Figure 9: Optical Interface 1.5.7 Digital I/O – 71M6531D/F The 71M6531D/F includes up to 22 pins of general-purpose digital I/O. These pins are compatible with 5 V inputs (no current limiting resistors are needed). The Digital I/O pins can be categorized as follows: • Dedicated DIO pins (1 pin): PB • DIO/LCD segment pins (a total of 19 pins): o DIO4/SEG24 - DIO15/SEG35 (12 pins) o DIO17/SEG37 (1 pin) o DIO28/SEG48 – DIO29/SEG49 (2 pins) o DIO43/SEG63 - DIO46/SEG66 (4 pins) • DIO pins combined with other functions (2 pins): DIO2/OPT_TX, DIO1/OPT_RX The pins DIO4/SEG24 through DIO46/SEG66 are configured by the LCD_BITMAP registers to be DIO or segment pins. A one in LCD_BITMAP defines the pin as a LCD segment output, a zero makes the pin a DIO pin. Pins configured as LCD pins are controlled with the LCD_SEGnn registers. Pins configured as DIO can be defined independently as an input or output with the DIO_DIR bits (see Table 45). Write operations to a disabled DIO are not ignored. Write operations are registered, but do not affect the pin, or the result of a read operation on the pin, until it becomes a DIO output. DIO2/OPT_TX will be an active TX output pin at power up (OPT_TXE[1:0] = 00). A 3-bit configuration word, I/O RAM field DIO_Rx[2:0] (0x2009[2:0] through 0x200E[6:4]), can be used for certain pins (when configured as DIO) to individually assign an internal resource such as an interrupt or a timer control (see Table 46 for DIO pins available for this option). This way, DIO pins can be tracked even if they are configured as outputs. Table 39 to Table 41 lists the direction registers and configurability associated with each group of DIO pins. v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 41 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 Table 39: Data/Direction Registers and Internal Resources for DIO 1-15 (71M6531D/F) DIO LCD Segment Pin number Configuration (DIO or LCD segment) Data Register Direction Register Internal Resources Configurable PB – 65 – 0 – – 1 – 60 – 2 – 3 – – – – – 4 24 39 0 5 25 40 1 6 26 41 7 27 42 8 28 43 9 29 44 10 30 45 11 31 46 12 32 68 13 33 30 14 34 21 15 35 22 2 3 4 5 6 7 0 1 2 3 LCD_BITMAP[31:24] LCD_BITMAP[39:32] 1 2 – 4 5 6 7 0 1 2 3 4 5 6 7 DIO0 = P0 (SFR 0x80) DIO1 = P1 (SFR 0x90) 1 2 – 4 5 6 7 0 1 2 3 4 5 6 7 DIO_DIR0 (SFR 0xA2) DIO_DIR1 (SFR 0x91) – – Y Y Y Y Y Y Y Y – – – – – Table 40: Data/Direction Registers and Internal Resources for DIO 17-29 (71M6531D/F) DIO LCD Segment Pin number – – – 17 37 13 – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – 28 48 47 29 49 24 – – – – – – Direction Register 0 = input, 1 = output DIO_DIR2 (SFR 0xA1) Table 41: Data/Direction Registers and Internal Resources for DIO 43-46 (71M6531D/F) DIO LCD Segment Pin number Configuration (DIO or LCD segment) – – – – – – – – – 43 63 29 44 64 23 45 65 28 46 66 5 – – – – – – 7 LCD_BITMAP[63:56] LCD_SEG63[3] LCD_SEG63[0] 0 1 2 – LCD_BITMAP[64:71] LCD_SEG64[3] LCD_SEG64[0] LCD_SEG65[3] LCD_SEG65[0] LCD_SEG66[3] LCD_SEG66[0] Data Register – – – – Direction Register 0 = input, 1 = output – – – – 42 © 2005-2010 TERIDIAN Semiconductor Corporation LCD_SEG49[3] LCD_SEG48[3] – 5 – – – – – Configuration (DIO or LCD segment) LCD_BITMAP[39:32] – 1 – – – – – Data Register DIO2 = P2 (SFR 0xA0) – 1 – – – – – 0 1 – – LCD_BITMAP[55:48] – – – 4 5 – – DIO3 = P3 (SFR 0xB0) v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 1.5.8 Digital I/O – 71M6532D/F The 71M6532D/F includes up to 43 pins of general-purpose digital I/O. These pins are compatible with 5 V inputs (no current limiting resistors are needed). The Digital I/O pins can be categorized as follows: • Dedicated DIO pins (4 pins): o DIO3 o DIO56 – DIO58 (3 pins) • DIO/LCD segment pins (a total of 37 pins): o DIO4/SEG24 – DIO27/SEG47 (24 pins) o DIO29/SEG49, DIO30/SEG50 (2 pins) o DIO40/SEG60 – DIO45/SEG65 (6 pins) o DIO47/SEG67 – DIO51/SEG71 (5 pins) • DIO pins combined with other functions (2 pins): DIO2/OPT_TX, DIO1/OPT_RX On reset or power-up, all DIO pins are inputs until they are configured for the desired direction under MPU control. The pin function can be configured by the I/O RAM bits LCD_BITMAPn. Setting LCD_BITMAPn = 1 configures the pin for LCD, setting LCD_BITMAPn = 0 configures it for DIO. Once a pin is configured as DIO, it can be configured independently as an input or output with the DIO_DIR bits or the LCD_SEGn registers. Input and output data are written to or read from the pins using SFR registers P0, P1, and P2. Table 42 to Table 44 shows the DIO pins with their configuration, direction control and data registers. Table 42: Data/Direction Registers and Internal Resources for DIO 1-15 (71M6532D/F) DIO LCD Segment Pin number Configuration (DIO or LCD segment) Data Register Direction Register 0 = input, 1 = output Internal Resources Configurable 0 – PB – 92 1 – 87 2 – 3 3 – 17 4 24 60 0 5 25 61 1 6 26 62 7 27 63 8 28 67 9 29 68 10 30 69 6 11 31 70 7 12 32 100 13 33 44 14 34 29 15 35 30 Always DIO 1 2 3 4 5 DIO0 = P0 (SFR 0x80) 1 2 3 4 5 6 DIO_DIR0 (SFR 0xA2) 2 3 4 5 LCD_BITMAP[31:24] 6 7 0 1 7 0 0 1 2 3 LCD_BITMAP[39:32] 2 3 4 5 6 7 DIO1 = P1 (SFR 0x90) 1 2 3 4 5 6 7 DIO_DIR1 (SFR 0x91) Y Y Y Y Y Y Y Y Y Y Y Y – – – – Table 43: Data/Direction Registers and Internal Resources for DIO 16-30 (71M6532D/F) DIO LCD Segment Pin number Configuration (DIO or LCD segment) Data Register 16 36 33 17 37 12 18 18 13 19 39 64 20 40 65 21 41 66 22 42 93 23 43 54 24 44 46 25 45 43 26 46 42 27 47 41 – – – 29 49 32 30 50 35 – – LCD_SEG49[3] Direction Register 0 = input, 1 = output LCD_SEG50[3] 4 5 6 7 0 1 2 3 – – – – – 1 2 – LCD_BITMAP[39:32] LCD_BITMAP[47:40] LCD_BITMAP[55:48] 0 1 2 3 4 5 6 7 0 1 2 3 – 5 6– DIO2 = P2 (SFR 0xA0) DIO3 = P3 (SFR 0xB0) – 1 – 3 4 5 – – – – – – – – DIO_DIR2 (SFR 0xA1) v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 43 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 Table 44: Data/Direction Registers and Internal Resources for DIO 40-51 (71M6532D/F) DIO LCD Segment Pin number Configuration (DIO or LCD segment) 40 60 95 41 61 97 42 62 98 43 63 40 44 64 31 0 LCD_SEG64[0] 45 65 38 1 LCD_SEG65[0] – – – 47 67 22 48 68 23 49 69 24 50 70 25 6 LCD_SEG70[0] LCD_SEG70[3] 51 71 50 7 LCD_SEG71[0] LCD_SEG71[3] v1.3 4 5 6 7 LCD_BITMAP[63:56] LCD_SEG60[0] LCD_SEG61[0] LCD_SEG62[0] LCD_SEG63[0] – 3 4 5 LCD_BITMAP[71:64] LCD_SEG67[0] LCD_SEG68[0] LCD_SEG68[3] LCD_SEG69[0] LCD_SEG69[3] Data Register – LCD_SEG60[0] LCD_SEG61[0] LCD_SEG62[0] LCD_SEG63[0] LCD_SEG64[3] LCD_SEG65[3] Direction Register 0 = input, 1 = output – DIO24 and higher do not have SFR registers for direction control. DIO40 and higher do not have SFR registers for data access. The direction control of these pins is achieved with the LCD_SEGn[3] bits and data access is controlled with the LCD_SEGn[0] bits in I/O RAM. DIO56 through DIO58 are dedicated DIO pins. They are controlled with DIO_DIR56[7] through DIO_DIR58[7] and with DIO_56[4] through DIO_58[4] in I/O RAM. 1.5.9 Digital IO – Common Characteristics for 71M6531D/F and 71M6532D/F On reset or power-up, all DIO pins are inputs until they are configured for the desired direction under MPU control. The pin function can be configured by the I/O RAM bits LCD_BITMAPn. Setting LCD_BITMAPn = 1 configures the pin for LCD, setting LCD_BITMAPn = 0 configures it for DIO. Once a pin is configured as DIO, it can be configured independently as an input or output with the DIO_DIR bits or the LCD_SEGn registers. Input and output data are written to or read from the pins using SFR registers P0, P1, and P2. DIO24 and higher do not have SFR registers for direction control. DIO40 and higher do not have SFR registers for data access. The direction control of these pins is achieved with the LCD_SEGn[3] registers and data access is controlled with the LCD_SEGn[0] registers in I/O RAM. Since the control for DIO24 through DIO51 is shared with the control for LCD segments, the firmware must take care not to disturb the DIO pins when accessing the LCD segments and vice versa. Usually, this requires reading the I/O RAM register, applying a mask and writing back the modified byte. Table 45: DIO_DIR Control Bit DIO_DIR [n] 0 1 Input Output Table 46: Selectable Control using DIO_DIR Bits DIO_R Value 0 1 2 3 4 5 6 7 Resource Selected for DIO Pin None Reserved T0 (counter 0 clock) T1 (counter 1 clock) High priority I/O interrupt (INT0 rising) Low priority I/O interrupt (INT1 rising) High priority I/O interrupt (INT0 falling) Low priority I/O interrupt (INT1 falling) DIO Pin n Function 44 © 2005-2010 TERIDIAN Semiconductor Corporation LCD_SEG67[3] FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F Additionally, if DIO6 and DIO7 are configured as DIO and defined as outputs, they can be used as dedicated pulse outputs (WPULSE = DIO6, VARPULSE = DIO7) using the DIO_PW and DIO_PV bits. In this case, DIO6 and DIO7 are under CE control. DIO4 and DIO5 can be configured to implement the EEPROM Interface. The PB pin is a dedicated digital input. In addition, if the optical UART is not used, OPT_TX and OPT_RX can be configured as dedicated DIO pins, DIO1 and DIO2, respectively (see Section 1.5.6 Optical Interface). The internal control resources selectable for the DIO pins are listed in Table 46. If more than one input is connected to the same resource, the resources are combined using a logical OR. Tracking DIO pins configured as outputs is useful for pulse counting without external hardware. Either the interrupts or the counter/timer clocks can be used to count pulses on the pulse outputs or interrupts on the CE’s power failure output. When driving LEDs, relay coils etc., the DIO pins should sink the current into GNDD (as shown in Figure 10, right), not source it from V3P3D (as shown in Figure 10, left). This is due to the resistance of the internal switch that connects V3P3D to either V3P3SYS or VBAT. Sourcing current into or out of DIO pins other than the PB pin, for example with pull-up or pulldown resistors, should be avoided. Violating this rule will lead to increased quiescent current in sleep and LCD modes. MISSION LCD/SLEEP BROWNOUT V3P3SYS VBAT V3P3D MISSION LCD/SLEEP BROWNOUT V3P3SYS VBAT V3P3D HIGH HIGH-Z LOW DIO HIGH HIGH-Z LOW DIO GNDD GNDD Figure 10: Connecting an External Load to DIO Pins 1.5.10 LCD Drivers – 71M6531D/F The 71M6531 contains a total of 39 dedicated and multiplexed LCD drivers which are grouped as follows: • 11 dedicated LCD segment drivers – always available • 3 drivers multiplexed with the ICE interface (E_TCLK, E_RST, E_RXTX) – available in normal operation mode (when not emulating) • 2 driver multiplexed with auxiliary signals MUX_SYNC and CKTEST (SEG7, SEG19) – available when not used for test • 4 drivers multiplexed with the SPI port (PCLK, PSDO, PCSZ, PSDI) • 19 multi-use pins described in Section 1.5.7 Digital I/O – 71M6531D/F. • 4 common drivers for multiplexing (25%, 33%, 50%, or 100% duty cycle) – always available With a minimum of 16 driver pins always available and a total of 39 driver pins in the maximum configuration, the device is capable of driving between 64 to 156 pixels of LCD display with 25% duty cycle. At eight pixels per digit, this corresponds to 8 to 19 digits. At 33% duty cycle, 48 to 117 pixels can be driven. For each multi-use pin, the corresponding LCD_BITMAP[] bit (see Section 1.5.7 Digital I/O – 71M6531D/F), is used to select the pin for DIO or LCD operation. The mapping of the LCD_BITMAP[] bits is specified in v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 45 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 Section 4.1 I/O RAM and SFR Map – Functional Order. The LCD drivers are supported by the four common pins (COM0 – COM3). 1.5.11 LCD Drivers – 71M6532D/F The 71M6532D/F contains a total of 67 dedicated and multiplexed LCD drivers, which are grouped as follows: • • • • • 15 dedicated LCD segment drivers (SEG0 to SEG2, SEG8, SEG12 - SEG18, SEG20 – SEG23) 4 drivers multiplexed with the SPI port (SEG3 to SEG6) 2 drivers multiplexed with MUX_SYNC (SEG7) or CKTEST (SEG19) 3 drivers multiplexed with the ICE interface (SEG9 to SEG11) 43 multi-use LCD/DIO pins described in Section 1.5.8 Digital I/O – 71M6532D/F. With a minimum of 15 driver pins always available and a total of 67 driver pins in the maximum configuration, the device is capable of driving between 60 to 268 pixels of an LCD display with 25% duty cycle. At eight pixels per digit, this corresponds to 7.5 to 33.5 digits. For each multi-use pin, the corresponding LCD_BITMAP[ ] bit (see Section 1.5.8 Digital I/O – 71M6532D/F), is used to select the pin for DIO or LCD operation. The mapping of the LCD_BITMAP[ ] bits is specified in Section 4.1 I/O RAM and SFR Map – Functional Order. The LCD drivers are supported by the four common pins (COM0 – COM3). 1.5.12 LCD Drivers – Common Characteristics for 71M6531D/F and 71M6532D/F The LCD interface is flexible and can drive 7-segment digits, 14-segment digits or enunciator symbols. The LCD bias may be compensated for temperature using the LCD_DAC[2:0] bits in I/O RAM. The bias may be adjusted from 1.4 V below the 3.3 V supply (V3P3SYS in mission mode and brownout modes, VBAT in LCD mode). When the LCD_DAC[2:0] bits are set to 000, the DAC is bypassed and powered down. This can be used to reduce current in LCD mode. Segment drivers SEG18 and SEG19 can be configured to blink at either 0.5 Hz or 1 Hz. The blink rate is controlled by LCD_Y. There can be up to four pixels/segments connected to each of these drivers. LCD_BLKMAP18[3:0] and LCD_BLKMAP19[3:0] identify which pixels, if any, are to blink. The most significant bit corresponds to COM3, the least significant to COM0. 1.5.13 Battery Monitor The battery voltage is measured by the ADC during alternative MUX frames if the BME (Battery Measure Enable) bit is set. While BME is set, an on-chip 45 kΩ load resistor is applied to the battery and a scaled fraction of the battery voltage is applied to the ADC input. After each alternative MUX frame, the result of the ADC conversion is available at RAM address 0x0B. BME is ignored and assumed zero when system power is not available. If VBAT is connected to a drained battery or disconnected, a battery test that sets BME may drain VBAT’s supply and cause the oscillator to stop. A stopped oscillator may force the device to reset. Therefore, an unexpected reset during a battery test should be interpreted as a battery failure. Battery measurement is not very linear but is very reproducible if properly calibrated. The best way to perform the calibration is to set the battery input to the desired failure voltage and then have the MPU firmware record that measurement. After this, the battery measurement logic may use the recorded value as the battery failure limit. The same value can also be a calibration offset for any battery voltage display. See Section 5.4.4 Battery Monitor for details regarding the ADC LSB size and the conversion accuracy. 1.5.14 EEPROM Interface The 71M6531D/F and 71M6532D/F provide hardware support for either a two-pin or a three-wire (µ-wire) type of EEPROM interface. The interfaces use the EECTRL and EEDATA registers for communication. 46 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Two-Pin EEPROM Interface Data Sheet 71M6531D/F-71M6532D/F The dedicated 2-pin serial interface communicates with external EEPROM devices. The interface is multiplexed onto the DIO4 (SCK) and DIO5 (SDA) pins and is selected by setting DIO_EEX[1:0] = 01. The MPU communicates with the interface through the SFR registers EEDATA and EECTRL. If the MPU wishes to write a byte of data to the EEPROM, it places the data in EEDATA and then writes the Transmit code to EECTRL. This initiates the transmit operation which is finished when the BUSY bit falls. INT5 is also asserted when BUSY falls. The MPU can then check the RX_ACK bit to see if the EEPROM acknowledged the transmission. A byte is read by writing the Receive command to EECTRL and waiting for the BUSY bit to fall. Upon completion, the received data is in EEDATA. The serial transmit and receive clock is 78 kHz during each transmission and then holds in a high state until the next transmission. The EECTRL bits when the two-pin interface is selected are shown in Table 47. Table 47: EECTRL Bits for 2-pin Interface Read/ Reset Polarity Description Write State R R R R W 0 0 1 1 0000 Positive Positive Negative Negative Positive 1 when an illegal command is received. 1 when serial data bus is busy. 0 indicates that the EEPROM sent an ACK bit. 0 indicates when an ACK bit has been sent to the EEPROM. CMD[3:0] 0000 Operation No-op command. Stops the I2C clock (SCK, DIO4). If not issued, SCK keeps toggling. Receive a byte from the EEPROM and send ACK. Transmit a byte to the EEPROM. Issue a STOP sequence. Receive the last byte from the EEPROM and do not send ACK. Issue a START sequence. No operation, set the ERROR bit. Status Bit 7 6 5 4 3:0 Name ERROR BUSY RX_ACK TX_ACK CMD[3:0] 0010 0011 0101 0110 1001 Others The EEPROM interface can also be operated by controlling the DIO4 and DIO5 pins directly. In this case, a resistor has to be used in series with SDA to avoid data collisions due to limits in the speed at which the SDA pin can be switched from output to input. Controlling DIO4 and DIO5 directly is discouraged, because it may tie up the MPU to the point where it may become too busy to process interrupts. Three-Wire (µ-Wire) EEPROM Interface A 500 kHz three-wire interface, using SDATA, SCK and a DIO pin for CS is available. The interface is selected by setting DIO_EEX[1:0] = 2 (b10). The EECTRL bits when the three-wire interface is selected are shown in Table 48. When EECTRL is written, up to 8 bits from EEDATA are either written to the EEPROM or read from the EEPROM, depending on the values of the EECTRL bits. The µ-Wire EEPROM interface is only functional when MPU_DIV[2:0] = 000. v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 47 Data Sheet 71M6531D/F-71M6532D/F Table 48: EECTRL Bits for the 3-Wire Interface Control Bit 7 FDS 6531/6532 005 6 5 4 3:0 Read/ Description Write WFR W Wait for Ready. If this bit is set, the trailing edge of BUSY will be delayed until a rising edge is seen on the data line. This bit can be used during the last byte of a Write command to cause the INT5 interrupt to occur when the EEPROM has finished its internal write sequence. This bit is ignored if HiZ = 0. BUSY R Asserted while the serial data bus is busy. When the BUSY bit falls, an INT5 interrupt occurs. HiZ W Indicates that the SD signal is to be floated to high impedance immediately after the last SCK rising edge. RD W Indicates that EEDATA is to be filled with data from EEPROM. CNT[3:0] W Specifies the number of clocks to be issued. Allowed values are 0 through 8. If RD=1, CNT bits of data will be read MSB first and right justified into the low order bits of EEDATA. If RD=0, CNT bits will be sent MSB first to the EEPROM, shifted out of the MSB of EEDATA. If CNT[3:0] is zero, SDATA will simply obey the HiZ bit. Name The timing diagrams in Figure 11 through Figure 15 describe the 3-wire EEPROM interface behavior. All commands begin when the EECTRL register is written. Transactions start by first raising the DIO pin that is connected to CS. Multiple 8-bit or less commands such as those shown in Figure 11 through Figure 15 are then sent via EECTRL and EEDATA. When the transaction is finished, CS must be lowered. At the end of a Read transaction, the EEPROM will be driving SDATA, but will transition to HiZ (high impedance) when CS falls. The firmware should then immediately issue a write command with CNT=0 and HiZ=0 to take control of SDATA and force it to a low-Z state. EECTRL Byte Written CNT Cycles (6 shown) Write -- No HiZ SCLK (output) SDATA (output) SDATA output Z BUSY (bit) D7 D6 D5 (LoZ) D4 D3 D2 INT5 Figure 11: 3-Wire Interface. Write Command, HiZ=0 EECTRL Byte Written CNT Cycles (6 shown) Write -- With HiZ SCLK (output) SDATA (output) SDATA output Z BUSY (bit) D7 D6 D5 (LoZ) D4 D3 D2 INT5 (HiZ) Figure 12: 3-Wire Interface. Write Command, HiZ=1 48 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 EECTRL Byte Written CNT Cycles (8 shown) READ SCLK (output) SDATA (input) SDATA output Z BUSY (bit) D7 D6 (HiZ) D5 D4 Data Sheet 71M6531D/F-71M6532D/F INT5 D3 D2 D1 D0 Figure 13: 3-Wire Interface. Read Command. EECTRL Byte Written Write -- No HiZ SCLK (output) SDATA (output) SDATA output Z BUSY (bit) INT5 not issued CNT Cycles (0 shown) EECTRL Byte Written Write -- HiZ SCLK (output) INT5 not issued CNT Cycles (0 shown) D7 (LoZ) SDATA (output) SDATA output Z BUSY (bit) (HiZ) Figure 14: 3-Wire Interface. Write Command when CNT=0 EECTRL Byte Written CNT Cycles (6 shown) Write -- With HiZ and WFR SCLK (output) SDATA (out/in) SDATA output Z BUSY (bit) D7 D6 D5 (From 6520) (LoZ) D4 D3 D2 BUSY (From EEPROM) (HiZ) READY INT5 Figure 15: 3-Wire Interface. Write Command when HiZ=1 and WFR=1 1.5.15 SPI Slave Port The slave SPI port communicates directly with the MPU data bus and is able to read and write Data RAM locations. It is also able to send commands to the MPU. The interface to the slave port consists of the PCSZ, PCLK, PSDI and PSDO pins. These pins are multiplexed with the LCD segment driver pins SEG3 to SEG6. The port pins default to LCD driver pins. The port is enabled by setting the SPE bit. A typical SPI transaction is as follows. While PCSZ is high, the port is held in an initialized/reset state. During this state, PSDO is held in HiZ state and all transitions on PCLK and PSDI are ignored. When PCSZ falls, the port will begin the transaction on the first rising edge of PCLK. A transaction consists of an 8-bit command, a 16-bit address and then one or more bytes of data. The transaction ends when PCSZ is raised. Some transactions may consist of a command only. The last SPI command and address (if part of the command) are available to the MPU in registers SP_CMD and SP_ADDR. The SPI port supports data transfers at 1 Mb/s in mission mode and 16 kb/s in brownout mode. The SPI commands are described in Table 49 and in Figure 16 illustrate the SPI Interface read and write timing. v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 49 Data Sheet 71M6531D/F-71M6532D/F Table 49: SPI Command Description Command 11xx xxxx ADDR Byte0 ... ByteN FDS 6531/6532 005 10xx xxxx ADDR Byte0 ... ByteN Description Read data starting at ADDR. The ADDR will auto-increment until PCSZ is raised. Upon completion: SP__CMD=11xx xxxx, SP_ADDR=ADDR+N+1. No MPU interrupt is generated if the command is 1100 0000. Otherwise, an SPI interrupt is generated. Write data starting at ADDR. The ADDR will auto-increment until PCSZ is raised. Upon completion: SP_CMD=10xx xxxx, SP_ADDR=ADDR+N+1. No MPU interrupt is generated if the command is 1000 0000. Otherwise, an SPI interrupt is generated. Certain I/O RAM registers can be written and read using the SPI port (see Table 50). However, the MPU takes priority over the I/O RAM bus, and SPI operation may fail without notice. To avoid this situation, the SPI host should send a command other than 11xxxxxx or 10xxxxxx (read or write) before the actual read or write command. The SPI slave interface will load the command register and generate an INT2 interrupt upon receiving the command. The MPU should service the interrupt and halt any external data memory operations to effectively grant the bus to the SPI. When the SPI host finishes, it should send another command so the MPU can release the bus. There are no issues with Data RAM access; SPI and the MPU will share the bus with no conflicts for Data RAM access. Table 50: I/O RAM Registers Accessible via SPI Address (hex) CE0 2000 CE1 2001 CE2 2002 CONFIG0 2004 CONFIG1 2005 VERSION 2006 CONFIG2 2007 DIO0 2008 DIO1 to DIO6 2009 to 200E − 200F RTM0H 2060 RTM0L 2061 RTM1H 2062 RTM1L 2063 RTM2H 2064 RTM2L 2065 RTM3H 2066 RTM3L 2067 PLS_W 2080 PLS_I 2081 SLOT0 to SLOT9 2090 to 209A CE3 209D CE4 20A7 CE5 20A8 WAKE 20A9 CONFIG3 20AC CONFIG4 20AD − 20AF 50 Name Bit Range 7:3 7:0 5:3, 1:0 7:6, 3:0 5:2, 0 7:0 7:0 7:6, 4:0 6:4, 2:0 7:6, 3:2 1:0 7:0 1:0 7:0 1:0 7:0 1:0 7:0 7:0 7:0 7:0 3:0 7:0 7:0 7:5, 3:0 5:4, 1:0 5:4, 1:0 2:0 Read/Write RW RW RW RW RW R RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW R RW RW RW v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation FDS 6531/6532 005 Name SPI0 SPI1 VERSION CHIP_ID TRIMSEL TRIMX TRIM SERIAL READ Data Sheet 71M6531D/F-71M6532D/F Address (hex) 20B0 20B1 20C8 20C9 20FD 20FE 20FF Bit Range 4, 0 4, 0 7:0 7:0 4:0 0 7:0 Read/Write RW R R R RW RW RW 8 bit CMD 16 bit Address DATA[ADDR] DATA[ADDR+1] PCSZ 0 PSCK (From Host) PSDI (From 6531) PSDO x C7 C6 C5 C0 HI Z A15 A14 A1 A0 x D7 D6 D1 D0 D7 7 8 23 24 31 32 Extended Read . . . 39 D6 D1 D0 SERIAL WRITE 8 bit CMD 16 bit Address DATA[ADDR] DATA[ADDR+1] PCSZ 0 PSCK (From Host) PSDI (From 6531) PSDO x C7 C6 C5 C0 A15 A14 A1 A0 HI Z D7 D6 D1 D0 D7 7 8 23 24 31 32 Extended Write . . . 39 D6 D1 D0 x Figure 16: SPI Slave Port: Typical Read and Write operations Possible applications for the SPI interface are: 1) An external host reads data from CE locations to obtain metering information. This can be used in applications where the 71M6531D/F or 71M6532D/F function as smart front-ends with preprocessing capability. Since the addresses are in 16-bit format, any type of XRAM data can be accessed: CE, MPU, I/O RAM, but not SFRs or the 80515-internal register bank. 2) A communication link can be established via the SPI interface: By writing into MPU memory locations, the external host can initiate and control processes in the MPU of the 71M6531D/F or 71M6532D/F. Writing to a CE or MPU location normally generates an interrupt, a function that can be used to signal to the MPU that the byte that had just been written by the external host must be read and processed. Data can also be inserted by the external host without generating an interrupt. 3) An external DSP can access front-end data generated by the ADC. This mode of operation uses the 71M6531D/F or 71M6532D/F as an analog front-end (AFE). v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 51 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 1.5.16 Hardware Watchdog Timer V1 V3P3 V3P3 - 10mV V3P3 400mV Normal operation, WDT enabled VBIAS WDT disabled An independent, robust, fixed-duration, watchdog timer (WDT) is included in the 71M6531D/F and 71M6532D/F. It uses the RTC crystal oscillator as its time base and must be refreshed by the MPU firmware at least every 1.5 seconds. When not refreshed on time, the WDT overflows and the part is reset as if the RESET pin were pulled high, except that the I/O RAM bits will be in the same state as after a wake-up from SLEEP or LCD modes (see the I/O RAM description in Section 4.2 for a list of I/O RAM bit states after RESET and wake-up). 4100 oscillator cycles (or 125 ms) after the WDT overflow, the MPU will be launched from program address 0x0000. A status bit, WD_OVF, is set when the WDT overflow occurs. This bit is powered by the nonvolatile supply and can be read by the MPU when WAKE rises to determine if the part is initializing after a WDT overflow event or after a power-up. After it is read, the MPU firmware must clear WD_OVF. The WD_OVF bit is also cleared by the RESET pin. There is no internal digital state that deactivates the WDT. Battery modes 0V Figure 17: Functions defined by V1 The WDT can be disabled by tying the V1 pin to V3P3 (see Figure 17). Of course, this also deactivates V1 power fault detection. Since there is no method in firmware to disable the crystal oscillator or the WDT, it is guaranteed that whatever state the part might find itself in, upon watchdog overflow, the part will be reset to a known state. Asserting ICE_E will also deactivate the WDT. This is the only method that will work in BROWNOUT mode. In normal operation, the WDT is reset by periodically writing a one to the WDT_RST bit. The watchdog timer is also reset when the internal signal WAKE = 0 (see Section 2.5 Wake-Up Behavior). If enabled with the IEN_WD_NROVF bit in I/O RAM, an interrupt occurs roughly 1 ms before the WDT resets the chip. This can be used to determine the cause of a WDT reset since it allows the code to log its state (e.g. the current PC value, loop counters, flags, etc.) before a WDT reset occurs. 52 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 1.5.17 Test Ports (TMUXOUT pin) One of the digital or analog signals listed in Table 51 can be selected to be output on the TMUXOUT pin. The function of the multiplexer is controlled with the I/O RAM field TMUX[4:0] (0x20AA[4:0]), as shown in Table 51. Table 51: TMUX[4:0] Selections TMUX[4:0] 0 1 2 3 4 5 6 7 8 - 0x0F 0x10 0x11 0x12 0x13 0x14 0x15 0x16 – 0x17 0x18 0x19 0x1A 0x1B 0x1C 0X1D 0X1E 0X1F Mode Analog Analog Analog Analog Analog Analog Analog Analog – Digital Digital – Digital Digital Digital – Digital Digital – Digital Digital Digital Digital Digital Function GNDD Reserved GNDD Reserved PLL_2P5 Output of the 2.5 V low-power regulator Internal VBIAS voltage (nominally 1.6V) Not used Reserved RTC 1-second output RTC 4-second output Not used V1_OK comparator output Real-time output (RTM) from the CE WDTR_EN (Comparator 1 Output AND V1LT3) Not used RXD (from Optical interface, w/ optional inversion) MUX_SYNC Not used CKMPU (MPU clock) Pulse output RTCLK (output of the oscillator circuit, nominally 32,786Hz) CE_BUSY (busy interrupt generated by CE, 396µs) XFER_BUSY (transfer busy interrupt generated by the CE, nominally every 999.7ms) The TMUXOUT pin may be used for diagnosis purposes or in production test. The RTC 1-second output may be used to calibrate the crystal oscillator. The RTC 4-second output provides even higher precision. v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 53 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 2 2.1 Functional Description Theory of Operation t The energy delivered by a power source into a load can be expressed as: E = ∫ V (t ) I (t )dt 0 Assuming phase angles are constant, the following formulae apply:    P = Real Energy [Wh] = V * A * cos φ* t Q = Reactive Energy [VARh] = V * A * sin φ * t S = Apparent Energy [VAh] = P2 + Q2 For a practical meter, not only voltage and current amplitudes, but also phase angles and harmonic content may change constantly. Thus, simple RMS measurements are inherently inaccurate. A modern solid-state electricity meter IC such as the Teridian 71M6531 functions by emulating the integral operation above, i.e. it processes current and voltage samples through an ADC at a constant frequency. As long as the ADC resolution is high enough and the sample frequency is beyond the harmonic range of interest, the current and voltage samples, multiplied with the time period of sampling will yield an accurate quantity for the momentary energy. Summing up the momentary energy quantities over time will result in accumulated energy. 500 400 300 200 100 0 0 -100 -200 Current [A] 5 10 15 20 -300 -400 -500 Voltage [V] Energy per Interval [Ws] Accumulated Energy [Ws] Figure 18: Voltage, Current, Momentary and Accumulated Energy Figure 18 shows the shapes of V(t), I(t), the momentary power and the accumulated power, resulting from 50 samples of the voltage and current signals over a period of 20 ms. The application of 240 VAC and 100 A results in an accumulation of 480 Ws (= 0.133 Wh) over the 20 ms period, as indicated by the accumulated power curve. The described sampling method works reliably, even in the presence of dynamic phase shift and harmonic distortion. 54 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 2.2 System Timing Summary Figure 19 summarizes the timing relationships between the input MUX states, the CE_BUSY signal and the two serial output streams. In this example, MUX_DIV[3:0] = 4 and FIR_LEN[1:0] = 2 (384 CE cycles, 3 CK32 cycles per conversion), resulting in 13 CK32 cycles per multiplexer frame. Generally, the duration of each MUX frame is: • • • 1 + MUX_DIV * 1, if FIR_LEN[1:0] = 0 (138 CE cycles) 1 + MUX_DIV * 2, if FIR_LEN[1:0] = 1 (288 CE cycles) 1 + MUX_DIV * 3, if FIR_LEN[1:0] = 2 (384 CE cycles). An ADC conversion will always consume an integer number of CK32 clocks. Following this is a single CK32 cycle where the bandgap voltage is allowed to recover from the change in CROSS. ADC MUX Frame ADC TIMING CK32 150 MUX_SYNC MUX STATE ADC EXECUTION ADC0 S 0 1 MUX_DIV=4 (4 conversions) is shown Settle 2 3 S ADC1 900 ADC2 1350 ADC3 1800 MAX CK COUNT CE TIMING CE_EXECUTION CE_BUSY XFER_BUSY 0 450 CK COUNT = CE_CYCLES + floor((CE_CYCLES + 2) / 5) INITIATED BY A CE OPCODE AT END OF SUMMATION INTERVAL NOTES: 1. ALL DIMENSIONS ARE 5MHZ CK COUNTS. 2. THE PRECISE FREQUENCY OF CK IS 150*CRYSTAL FREQUENCY = 4.9152MHz. 3. XFER_BUSY OCCURS ONCE EVERY (PRE_SAMPS * SUM_CYCLES) CODE PASSES. Figure 19: Timing Relationship between ADC MUX, Compute Engine Each CE program pass begins when the ADC0 conversion (for IA) begins. Depending on the length of the CE program, it may continue running until the end of the last conversion (ADC3). CE opcodes are constructed to ensure that all CE code passes consume exactly the same number of cycles. The result of each ADC conversion is inserted into the RAM when the conversion is complete. The CE code is written to tolerate sudden changes in ADC data. The exact clock count when each ADC value is loaded into RAM is shown in Figure 19. Figure 20 shows that the serial data stream, RTM, begins transmitting at the beginning of state S. RTM, consisting of 140 CK cycles, will always finish before the next code pass starts. CK32 MUX_SYNC CKTEST TMUXOUT/RTM FLAG 0 1 30 31 FLAG 0 1 30 31 FLAG 0 1 30 31 FLAG 0 1 30 31 SIGN LSB SIGN SIGN RTM DATA 0 (32 bits) RTM DATA 1 (32 bits) RTM DATA 2 (32 bits) RTM DATA 3 (32 bits) Figure 20: RTM Output Format v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation SIGN LSB LSB LSB 55 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 2.3 Battery Modes Shortly after system power (V3P3SYS) is applied, the part will be in MISSION mode. MISSION mode means that the part is operating with system power and that the internal PLL is stable. This mode is the normal operation mode where the part is capable of measuring energy. When system power is not available (i.e. when V1 VBIAS V1 62°C) or for which T-22 < -40 (i.e. T < -18°C), the data sheet states ±40 PPM/°C. For temperatures between -18°C and +62°C, the error should be considered constant at ±1,600 PPM, or ±0.16%. Parameter VREF(T) deviation from VNOM(T) VREF (T ) − VNOM (T ) 10 6 max( T − 22 ,40) VNOM (T ) Condition -40 Min +40 Typ PPM/ºC Table 53: VREF Definition for 6513H Figure 31 shows this concept graphically. The “box” from -18°C to +62°C reflects the fact that it is impractical to measure the temperature coefficient of high-quality references at small temperature excursions. For example, at +25°C, the expected error would be ±3°C * 40 PPM/°C, or just 0.012%. The maximum deviation of ±2520 PPM (or 0.252%) is reached at the temperature extremes. If the reference voltage is used to measure both voltage and current, the identical errors of ±0.252% add up to a maximum Wh registration error of ±0.504%. 64 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F Error Band (PPM) over Temperature (°C) 2800 2400 2000 1600 1200 800 400 0 -400 -800 -1200 -1600 -2000 -2400 -2800 -40 -20 0 ±40 PPM/°C ±40 PPM/°C 20 40 60 80 Figure 31: Error Band for VREF over Temperature 3.4.2 Temperature Compensation for VREF The bandgap temperature is used to digitally compensate the power outputs for the temperature dependence of VREF, using the CE register GAIN_ADJ. Since the band gap amplifier is chopper-stabilized, the most significant long-term drift mechanism in the voltage reference is removed. The following formula is used to determine the GAIN_ADJ value of the CE. In this formula, TEMP_X is the deviation from nominal or calibration temperature expressed in multiples of 0.1 °C: GAIN _ ADJ = 16385 + 3.4.3 TEMP _ X ⋅ PPMC TEMP _ X 2 ⋅ PPMC 2 + 214 2 23 System Temperature Compensation In a production electricity meter, the 71M6531 or 71M6532D/F is not the only component contributing to temperature dependency. A whole range of components (e.g. current transformers, resistor dividers, power sources, filter capacitors) will contribute temperature effects. Since the output of the on-chip temperature sensor is accessible to the MPU, temperature compensation mechanisms with great flexibility are possible. MPU access to GAIN_ADJ permits a system-wide temperature correction over the entire meter rather than local to the chip. 3.4.4 Temperature Compensation for the RTC In order to obtain accurate readings from the RTC, the following procedure is recommended: 1. At the time of meter calibration, the crystal oscillator is calibrated using the RTCA_ADJ register in I/O RAM to be as close to 32768 Hz as possible. The recommended procedure is to connect a highprecision frequency counter to the TMUXOUT pin and select 0x11 for TMUX[4:0]. This will generate a 4-second pulse at TMUXOUT that can be used to trim RTCA_ADJ to the best value. 2. When the meter is in service, the MPU takes frequent temperature readings. If the temperature characteristics of the crystal are known, the temperature readings can be used to modify the settings for the I/O RAM registers PREG[16:0] and QREG[1:0] in order to keep the crystal frequency close to 32768 Hz. 3. After periods of operation under battery power, the temperature for the time the meter was not powered can be estimated by averaging the temperatures before and after battery operation. Based on this, the overall correction for the RTC time can be calculated and applied to the RTC after main power returns to the meter. v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 65 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 3.5 Connecting LCDs The 71M6531D/F and 71M6532D/F have an on-chip LCD controller capable of controlling static or multiplexed LCDs. Figure 32 shows the basic connection for an LCD. The following dedicated and multi-use pins can be assigned as LCD segment pins for the 71M6531D/F: • • • 12 dedicated LCD segment pins: SEG0 to SEG2, SEG7, SEG8, SEG12 to SEG18. 7 dual-function pins: SEG3/PCLK, SEG4/PSDO, SEG5/PCSZ, SEG6/PSDI, E_RXTX/SEG9, E_TCLK/SEG10, and E_RST/SEG11. 14 combined DIO and segment pins: SEG24/DIO4 to SEG35/DIO15, SEG37/DIO17, SEG48/DIO28, SEG49/DIO29 and SEG63/DIO43 to SEG66/DIO46. The following dedicated and multi-use pins can be assigned as LCD segments for the 71M6532D/F: • • • 15 dedicated LCD segment pins: SEG0 to SEG2, SEG8, SEG12 - SEG18, SEG20 - SEG23. 9 dual-function pins: MUX_SYNC/SEG7, E_RXTX/SEG9, E_TCLK/SEG10, E_RST/SEG11, SEG3/PCLK, SEG4/PSDO, SEG5/PCSZ, SEG6/PSDI. 43 combined DIO and segment pins, as described in section 1.5.8. 71M6531D/F or 71M6532D/F LCD segments commons . Figure 32: Connecting LCDs 3.6 Connecting I2C EEPROMs I2C EEPROMs or other I2C compatible devices should be connected to the DIO pins DIO4 and DIO5, as shown in Figure 33. Pull-up resistors of roughly 10 kΩ to V3P3D (to ensure operation in BROWNOUT mode) should be used for both SCL and SDA signals. The DIO_EEX[1:0] register in I/O RAM must be set to 01 in order to convert the DIO pins DIO4 and DIO5 to I2C pins SCL and SDA. 71M6531D/F 71M6532D/F 10 kΩ V3P3D 10 kΩ EEPROM DIO4 DIO5 SCL SDA Figure 33: I2C EEPROM Connection 66 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 3.7 Connecting Three-Wire EEPROMs µWire EEPROMs and other compatible devices should be connected to the DIO pins DIO4 and DIO5, as shown in Figure 34 and described below: • • • • • DIO5 connects to both the DI and DO pins of the three-wire device. The CS pin must be connected to a vacant DIO pin of the 71M6531. In order to prevent bus contention, a 10 kΩ to resistor is used to separate the DI and DO signals. The CS and CLK pins should be pulled down with resistors to prevent operation of the three-wire device on power-up, before the 71M6531 can establish a stable signal for CS and CLK. The DIO_EEX[1:0] register in I/O RAM must be set to 2 (b10) in order to convert the DIO pins DIO4 and DIO5 to µWire pins. The µ-Wire EEPROM interface is only functional when MPU_DIV[2:0] = 000. 71M653X V3P3D DIO4 DIO5 DIOn 100 kΩ 100 kΩ 10 k Ω EEPROM VCC CLK DI DO CS Figure 34: Three-Wire EEPROM Connection 3.8 UART0 (TX/RX) The UART0 RX pin should be pulled down by a 10 kΩ resistor and additionally protected by a 100 pF ceramic capacitor, as shown in Figure 35. 71M6531D/F, 71M6532D/F RX 100 pF 10 k Ω RX TX Figure 35: Connections for UART0 TX 3.9 Optical Interface (UART1) The OPT_TX and OPT_RX pins can be used for a regular serial interface (by connecting a RS-232 transceiver for example), or they can be used to directly operate optical components (for example, an infrared diode and phototransistor implementing a FLAG interface). Figure 36 shows the basic connections for UART1. The OPT_TX pin becomes active when the I/O RAM register OPT_TXE is set to 00. v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 67 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 The polarity of the OPT_TX and OPT_RX pins can be inverted with the configuration bits, OPT_TXINV and OPT_RXINV, respectively. The OPT_TX output may be modulated at 38 kHz when system power is present. Modulation is not available in BROWNOUT mode. The OPT_TXMOD bit enables modulation. The duty cycle is controlled by OPT_FDC[1:0], which can select 50%, 25%, 12.5% and 6.25% duty cycle. A 6.25% duty cycle means OPT_TX is low for 6.25% of the period. The OPT_RX pin uses digital signal thresholds. It may need an analog filter when receiving modulated optical signals. With modulation, an optical emitter can be operated at higher current than nominal, enabling it to increase the distance along the optical path. If operation in BROWNOUT mode is desired, the external components should be connected to V3P3D. V3P3SYS 71M6531D/F or 71M6532D/F OPT_RX 100 pF 10 kΩ R1 Phototransistor V3P3SYS R2 OPT_TX LED Figure 36: Connection for Optical Components 3.10 Connecting the V1 Pin A voltage divider should be used to establish that V1 is in a safe range when the meter is in MISSION mode (see Figure 37). V1 must be lower than 2.9 V in all cases in order to keep the hardware watchdog timer enabled. The resistor divider ratio must be chosen so that V1 crosses the VBIAS threshold when V3P3 is near the minimum supply voltage (3.0 VDC). A series resistor (R3) provides additional hysteresis, and a capacitor to ground (C1) is added for enhanced EMC immunity. The amount of hysteresis depends on the choice of R1 and R3: If V1 < VBIAS, approximately 1 µA will flow into the on-chip V1 comparator causing a voltage drop. If V1 ≥ VBIAS, almost no current will flow into the comparator. The voltage drop will require V3P3 to be slightly higher for V1 to cross the VBIAS threshold when V3P3 is rising as compared to when V3P3 is falling. Maintaining sufficient hysteresis helps to eliminate rapid mode changes which may occur in cases where the power supply is unstable with V1 close to the VBIAS threshold point. R1 V3P3 16.9kΩ R2 GND R3 20kΩ C1 100pF V1 Figure 37: Voltage Divider for V1 68 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 3.11 Connecting the Reset Pin Even though a functional meter will not necessarily need a reset switch, it is useful to have a reset pushbutton for prototyping as shown in Figure 38, left side. The RESET signal may be sourced from V3P3SYS (functional in MISSION mode only), V3P3D (MISSION and BROWNOUT modes), or VBAT (all modes, if a battery is present), or from a combination of these sources, depending on the application. For a production meter, the RESET pin should be protected by the by the external components shown in Figure 38, right side. R1 should be in the range of 100 Ω and mounted as closely as possible to the IC. VBAT/ V3P3D V3P3D R2 1k Ω Reset Switch 71M6531D/F 71M6532D/F 71M6533 71M6531D/F 71M6532D/F RESET 0.1µF 10k Ω R1 GNDD RESET 100Ω R1 DGND Figure 38: External Components for the RESET Pin: Push-button (Left), Production Circuit (Right) Since the 71M6531 generates its own power-on reset, a reset button or circuitry, as shown in Figure 38, is only required for test units and prototypes. 3.12 Connecting the Emulator Port Pins Even when the emulator is not used, small shunt capacitors to ground (22 pF) should be used for protection from EMI as illustrated in Figure 39. Production boards should have the ICE_E pin connected to ground. LCD Segments V3P3D 62 Ω 62 Ω (optional) ICE_E E_RST E_RXT E_TCLK 62 Ω 22 pF 22 pF 22 pF 71M6531D/F 71M6532D/F Figure 39: External Components for the Emulator Interface 3.13 Connecting a Battery It is important that a valid voltage is connected to the VBAT pin at all times. For meters without a battery, VBAT should be connected directly to V3P3SYS. Designs for meters with batteries need to ensure that the meter functions even when the battery voltage decreases below the specified voltage for VBAT. This can be achieved by connecting a diode from V3P3SYS to VBAT. However, the battery test will yield inaccurate results if that technique is used, since the voltage at V3P3SYS will feed current to the VBAT pin. A better solution is shown in Figure 40: During the battery test, a DIO pin is activated as an output and applies a low voltage to the anode of the diode. This prevents the voltage at the power supply to influence the voltage at the VBAT pin. v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 69 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 Power Supply V3P3SYS V3P3A DIO VBAT Battery or Super-Cap + 71M6531/71M6532 Figure 40: Connecting a Battery As mentioned in section 2.3, meters equipped with batteries need to contain code that transitions the chip to SLEEP mode as soon as the battery is attached in production. Otherwise, remaining in BROWNOUT mode would add unnecessary drain to the battery. 3.14 Flash Programming Operational or test code can be programmed into the flash memory using either an in-circuit emulator or the Flash Programmer Module (TFP2) available from Teridian. The flash programming procedure uses the E_RST, E_RXTX and E_TCLK pins. The FL_BANK[2:0] register must be set to the value corresponding to the bank that is being programmed. 3.15 MPU Firmware All application-specific MPU functions mentioned in the Application Information section are featured in the demonstration source code supplied by Teridian. The code is available as part of the Demonstration Kit for the 71M6531D/F and 71M6532D/F. The Demonstration Kits come with the 71M6531D/F or 71M6532D/F preprogrammed with demo firmware and mounted on a functional sample meter Demo Board. The Demo Boards allow for quick and efficient evaluation of the IC without having to write firmware or having to supply an in-circuit emulator (ICE). 3.16 Crystal Oscillator The oscillator drives a standard 32.768 kHz watch crystal. The oscillator has been designed specifically to handle these crystals and is compatible with their high impedance and limited power handling capability. The oscillator power dissipation is very low to maximize the lifetime of any battery backup device attached to VBAT. Board layouts with minimum capacitance from XIN to XOUT will require less battery current. Good layouts will have XIN and XOUT shielded from each other. For best rejection of electromagnetic interference, connect the crystal body and the ground terminals of the two crystal capacitors to GNDD through a ferrite bead. No external resistor should be connected across the crystal, since the oscillator is self-biasing. 70 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 3.17 Meter Calibration Once the Teridian 71M6531D/F or 71M6532D/F energy meter device has been installed in a meter system, it must be calibrated. A complete calibration includes the following: • • • • Calibration of the metrology section, i.e. calibration for tolerances of the current sensors, voltage dividers and signal conditioning components as well as of the internal reference voltage (VREF). Establishment of the reference temperature (Section 3.3) for temperature measurement and temperature compensation (Section 3.4). Calibration of the battery voltage measurement (Section 1.5.13). Calibration of the oscillator frequency (Section 1.5.3) and temperature compensation for the RTC (Section 3.4.4). The metrology section can be calibrated using the gain and phase adjustment factors accessible to the CE. The gain adjustment is used to compensate for tolerances of components used for signal conditioning, especially the resistive components. Phase adjustment is provided to compensate for phase shifts introduced by the current sensors or by the effects of reactive power supplies. Due to the flexibility of the MPU firmware, any calibration method, such as calibration based on energy, or current and voltage can be implemented. It is also possible to implement segment-wise calibration (depending on current range). The 71M6531D/F and 71M6532D/F support common industry standard calibration techniques, such as singlepoint (energy-only), multi-point (energy, Vrms, Irms) and auto-calibration. v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 71 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 4 4.1 Firmware Interface I/O RAM and SFR Map – Functional Order In Table 54, unimplemented (U) and reserved (R) bits are shaded in light gray. Unimplemented bits have no memory storage, writing them has no effect, and reading them always returns zero. Reserved bits may be in use and should not be changed from the values given in parentheses. Writing values other than those shown in parenthesis to reserved bits may have undesirable side effects and must be avoided. Non-volatile bits are shaded in dark gray. Non-volatile bits are backed-up during power failures if the system includes a battery connected to the VBAT pin. This table lists only the SFR registers that are not generic 8051 SFR registers. Bits marked with † apply to the 71M6531D/F only, bits marked with ‡ apply to the 71M6532D/F only and should be 0 for the other device. Table 54: I/O RAM Map in Functional Order Name Addr Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 Configuration: CE0 EQU[2:0] CE_E CE10MHZ U 2000 CE1 PRE_SAMPS[1:0] SUM_CYCLES[5:0] 2001 CE2 CHOP_E[1:0] RTM_E WD_OVF EX_RTC EX_XFR U 2002 COMP0 PLL_OK COMP_STAT 2003 U U U U U U CONFIG0 VREF_CAL PLS_INV CKOUT_E VREF_DIS MPU_DIV[2:0] 2004 U CONFIG1 ECK_DIS M26MHZ ADC_E MUX_ALT M40MHZ U U U 2005 VERSION VERSION[7:0] 2006 CONFIG2 OPT_TXE[1:0] EX_PLL EX_FWCOL FIR_LEN[1:0] OPT_FDC[1:0] 2007 CE3 MUX_DIV[3:0] 209D U CE4 BOOT_SIZE[7:0] 20A7 CE5 CE_LCTN[7:0] 20A8 WAKE WAKE_ARM SLEEP LCD_ONLY WAKE_RES WAKE_PRD[2:0] 20A9 U TMUX TMUX[4:0] U 20AA ANACTRL LCD_DAC[2:0] CHOP_I_EN‡ 20AB R (0000) CONFIG3 SEL_IBN‡ CHOP_IB‡ SEL_IAN‡ CHOP_IA‡ U U 20AC CONFIG4 20AD U R (0) R (0) U R (0) R (0) Interrupts and WD Timer: INTBITS WD_RST INT6 INT5 INT4 INT3 INT2 INT1 INT0 SFR F8 IFLAGS IE_WAKE IE_PB IE_FWCOL1 IE_FWCOL0 IE_RTC IE_XFER SFR E8 IE_PLLFALL IE_PLLRISE Flash Memory: ERASE FLSH_ERASE[7:0] SFR 94 FLSHCTL PREBOOT SECURE WRPROT_BT WRPROT_CE FLSH_MEEN FLSH_PWE U SFR B2 FL_BANK SFR B6 FLBANK[2:0] U PGADR FLSH_PGADR[5:0] U SFR B7 72 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Name Digital I/O: Addr Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Data Sheet 71M6531D/F-71M6532D/F Bit 2 Bit 1 Bit 0 DIO_RRX[2:0] 20AF U DIO0 DIO_EEX[1:0] OPT_RXDIS OPT_RXINV DIO_PW DIO_PV OPT_TXMOD OPT_TXINV 2008 DIO1 DIO_R1[2:0]† DI_RPB[2:0] U U 2009 DIO2 DIO_R2[2:0] U U U 200A DIO3 DIO_R5[2:0] DIO_R4[2:0] 200B U U DIO4 DIO_R7[2:0] DIO_R6[2:0] U U 200C DIO5 DIO_R9[2:0] DIO_R8[2:0] 200D U U DIO6 DIO_R11[2:0] DIO_R10[2:0] 200E U U DIO_PX DIO_PY 200F R(0) R (0) U U DIO7 DIO_0[7:1] DIO_0[0]† SFR 80 DIO8 DIO_DIR0[7:1] DIO_DIR0[0]† SFR A2 DIO9 DIO_1[7:0] (Port 1) SFR 90 DIO10 DIO_DIR1[7:0] SFR 91 DIO11 DIO_2[7]‡ DIO_2[6]‡ DIO_2[5]‡ DIO_2[4] ‡ DIO_2[3] ‡ DIO_2[2] ‡ DIO_2[1] DIO_2[0]‡ SFR A0 DIO12 SFR A1 DIO_DIR2[7] ‡ DIO_DIR2[6] ‡ DIO_DIR2[5] ‡ DIO_DIR2[4] ‡ DIO_DIR2[3] ‡ DIO_DIR2[2] ‡ DIO_DIR2[1] DIO_DIR2[0] ‡ DIO13 DIO_3[6]‡ DIO_3[5] DIO_3[4]† DIO_3[3] ‡ DIO_3[2] ‡ DIO_3[1] ‡ DIO_3[0] ‡ R(0) SFR B0 Real Time Clock: RTCCTRL RST_SUBSEC 2010 U RTCA_ADJ RTCA_ADJ[6:0] U 2011 SUBSEC1 SUBSEC[7:0] 2014 RTC0 RTC_SEC[5:0] 2015 U RTC1 RTC_MIN[5:0] U 2016 RTC2 RTC_HR[4:0] 2017 U RTC3 RTC_DAY[2:0] U 2018 RTC4 RTC_DATE[2:0] U 2019 RTC5 RTC_MO[3:0] 201A U RTC6 RTC_YR[7:0] 201B RTCADJ_H 201C PREG[16:14] U RTCADJ_M 201D PREG[13:6] RTCADJ_L PREG[5:0] QREG[1:0] 201E WE 201F RTC write protect register v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 73 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 Name Addr Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 LCD Display Interface: MUX_SYNC_E LCDX BME 2020 R (0) R (0) U LCDY LCD_Y LCD_E LCD_MODE[2:0] LCD_CLK[1:0] 2021 U LCD_MAP0 2023 LCD_BITMAP[31:24] LCD_BITMAP LCD_BITMAP LCD_BITMAP LCD_BITMAP LCD_BITMAP LCD_BITMAP LCD_BITMAP LCD_BITMAP LCD_MAP1 2024 [39]‡ [38]‡ [37] [36]‡ [35] [34] [33] [32] LCD_MAP2 2025 LCD_BITMAP[47:40]‡ LCD_BITMAP LCD_BITMAP LCD_BITMAP LCD_MAP3 2026 U [50]‡ [49] [48]† LCD_BITMAP LCD_BITMAP LCD_BITMAP LCD_BITMAP LCD_MAP4 2027 U [63] [62]‡ [61]‡ [60]‡ LCD_BITMAP LCD_BITMAP LCD_BITMAP LCD_BITMAP LCD_BITMAP LCD_BITMAP LCD_BITMAP LCD_BITMAP LCD_MAP5 2028 [71]‡ [70]‡ [69]‡ [68]‡ [67]‡ [66]† [65] [64] LCD_MAP6 2029 U LCD0 LCD_SEG42[3:0]‡ LCD_SEG0[3:0] 2030 2031 LCD1 LCD_SEG43[3:0]‡ LCD_SEG1[3:0] 2032 LCD2 LCD_SEG2[3:0] U 2033 LCD3 LCD_SEG45[3:0]‡ LCD_SEG3[3:0] 2034 LCD4 LCD_SEG46[3:0]‡ LCD_SEG4[3:0] LCD5 LCD_SEG47[3:0]‡ LCD_SEG5[3:0] 2035 LCD6 LCD_SEG48[3:0]† LCD_SEG6[3:0]† 2036 LCD7 LCD_SEG49[3:0] LCD_SEG7[3:0] 2037 LCD8 LCD_SEG50[3:0]‡ LCD_SEG8[3:0] 2038 LCD9 2039 LCD_SEG9[3:0] U … … … … LCD17 LCD_SEG17[3:0] U 2041 LCD18 LCD_SEG60[3:0]‡ LCD_SEG18[3:0] 2042 LCD19 LCD_SEG61[3:0]‡ LCD_SEG19[3:0] 2043 LCD20 LCD_SEG62[3:0]‡ LCD_SEG20[3:0]‡ 2044 LCD21 LCD_SEG63[3:0] LCD_SEG21[3:0]‡ 2045 LCD22 LCD_SEG64[3:0] LCD_SEG22[3:0]‡ 2046 LCD23 LCD_SEG65[3:0] LCD_SEG23[3:0]‡ 2047 LCD24 LCD_SEG66[3:0]† LCD_SEG24[3:0] 2048 LCD25 LCD_SEG67[3:0]‡ LCD_SEG25[3:0] 2049 LCD26 204A LCD_SEG68[3:0]‡ LCD_SEG26[3:0] 74 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Name Addr LCD27 204B LCD28 204C LCD29 204D LCD30 204E … … LCD33 2053 LCD36 2054 LCD37 2055 LCD38 2056 … … LCD41 2059 LCD_BLNK 205A RTM: RTM0H 2060 RTM0L 2061 RTM1H 2062 RTM1L 2063 RTM2H 2064 RTM2L 2065 RTM3H 2066 RTM3L 2067 SPI Interface: SPI… 2070 SP_CMD 2071 SP_ADH 2072 SP_ADL 2073 Pulse Generator: PLS_W 2080 PLS_I 2081 ADC MUX: SLOT0 2090 SLOT1 2091 SLOT2 2092 SLOT3 2093 SLOT4 2094 v1.3 Bit 7 Bit 6 Bit 5 LCD_SEG69[3:0]‡ LCD_SEG70[3:0]‡ LCD_SEG71[3:0]‡ U … U U U U … U LCD_BLKMAP19[3:0] U RTM0[7:0] U RTM1[7:0] U RTM2[7:0] U RTM3[7:0] SPE U SP_CMD[7:0] SP_ADDR[15:8] SP_ADDR[7:0] PLS_MAXWIDTH[7:0] PLS_INTERVAL[7:0] SLOT1_SEL SLOT3_SEL R R R © 2005-2010 TERIDIAN Semiconductor Corporation Bit 4 Bit 3 Data Sheet 71M6531D/F-71M6532D/F Bit 2 Bit 1 LCD_SEG27[3:0]† LCD_SEG28[3:0] LCD_SEG29[3:0] LCD_SEG30[3:0] … LCD_SEG35[3:0] LCD_SEG36[3:0]‡ LCD_SEG37[3:0] LCD_SEG38[3:0]‡ … LCD_SEG41[3:0]‡ LCD_BLKMAP18[3:0] RTM0[9:8] RTM1[9:8] RTM2[9:8] RTM3[9:8] Bit 0 SLOT0_SEL SLOT2_SEL R R R 75 Data Sheet 71M6531D/F-71M6532D/F Name Addr Bit 7 Bit 6 Bit 5 SLOT5 SLOT1_ALTSEL 2096 SLOT6 SLOT3_ALTSEL 2097 SLOT7 R 2098 SLOT8 R 2099 SLOT9 R 209A SPI Interrupt: SPI0 U 20B0 SPI1 U 20B1 General-Purpose Nonvolatile Registers: GP0 20C0 … … GP7 20C7 VERSION 20C8 Serial EEPROM: EEDATA SFR 9E EECTRL SFR 9F † 71M6531D/F only ‡ 71M6532D/F only Bit 4 Bit 3 Bit 2 Bit 1 SLOT0_ALTSEL SLOT2_ALTSEL R R R U U FDS 6531/6532 005 Bit 0 IEN_SPI SPI_FLAG GPO[7:0] … GP7[7:0] VERSION[7:0] EEDATA[7:0] EECTRL[7:0] IEN_WD_NROVF WD_NROVF_FLAG 76 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 4.2 • • • • I/O RAM Description – Alphabetical Order Bits with a W (write) direction are written by the MPU into configuration RAM. Typically, they are initially stored in flash memory and copied to the configuration RAM by the MPU. Some of the more frequently programmed bits are mapped to the MPU SFR memory space. The remaining bits are mapped to 2xxx. Bits with a R (read) direction can be read by the MPU. Columns labeled Reset and Wake describe the bit values upon reset and wake, respectively. “NV” in the Wake column means the bit is powered by the nonvolatile supply and is not initialized. LCD-related registers labeled “L” retain data upon transition from LCD mode to BROWNOUT mode and vice versa, but do not retain data in SLEEP mode. “–“ means that the value is undefined. Write-only bits will return zero when they are read. Table 55: I/O RAM Description - Alphabetical The following conventions apply to the descriptions in this table: Name ADC_E BME BOOT_SIZE[7:0] CE10MHZ CE_E CE_LCTN[7:0] Location 2005[3] 2020[6] 20A7[7:0] 2000[3] 2000[4] 20A8[4:0] Reset 0 0 01 0 0 31 Wake 0 – 01 0 0 31 Dir R/W R/W R/W R/W R/W R/W CHOP_E[1:0] 2002[5:4] 0 0 R/W CHOP_IA CHOP_IB CHOP_I_E CKOUT_E v1.3 20AC[0] 20AC[4] 20AB[0] 2004[4] 0 0 0 0 0 0 0 0 R/W R/W R/W R/W Description Enables ADC and VREF. When disabled, removes bias current. Battery Measure Enable. When set, a load current is immediately applied to the battery and it is connected to the ADC to be measured on Alternative Mux Cycles. See the MUX_ALT bit. End of space reserved for boot program. The ending address of the boot region is 1024*BOOT_SIZE. CE clock select. When set, the CE is clocked at 10 MHz. Otherwise, the CE clock frequency is 5 MHz. CE enable. CE program location. The starting address for the CE program is 1024*CE_LCTN. Chop enable for the reference bandgap circuit. The value of CHOP will change on the rising edge of MUXSYNC according to the value in CHOP_E[1:0]: 00 = toggle, except at the mux sync edge at the end of SUMCYCLE, an alternative MUX frame is automatically inserted at the end of each accumulation interval. 01 = positive. 10 = reversed. 11 = toggle, no alternative MUX frame is inserted This bit enables chop mode for the IA current channel (71M6532D/F only). CHOP_I_E must be set also. This bit enables chop mode for the IB current channel (71M6532D/F only). CHOP_I_E must be set also. This bit must be set to enable chop mode for the current channels (71M6532D/F only). Control bit for the SEG19/CKOUT pin: 0: The pin is the SEG19 LCD driver 1: The pin is the CK_FIR output (5 MHz in mission mode, 32 kHz in brownout mode) 77 © 2005-2010 TERIDIAN Semiconductor Corporation Data Sheet 71M6531D/F-71M6532D/F Name COMP_STAT[0] DI_RPB[2:0] DIO_R1[2:0] DIO_R2[2:0] DIO_R4[2:0] DIO_R5[2:0] DIO_R6[2:0] DIO_R7[2:0] DIO_R8[2:0] DIO_R9[2:0] DIO_R10[2:0] DIO_R11[2:0] DIO_RRX[2:0] Location 2003[0] 2009[2:0] 2009[6:4] 200A[2:0] 200B[2:0] 200B[6:4] 200C[2:0] 200C[6:4] 200D[2:0] 200D[6:4] 200E[2:0] 200E[6:4] 20AF[2:0] Reset – 0 0 0 0 0 0 0 0 0 0 0 0 Wake – 0 0 0 0 0 0 0 0 0 0 0 0 Dir R R/W FDS 6531/6532 005 Description Status bit for the V1 comparator (same as V1_OK, see TMUXOUT) Connects dedicated I/O pins DIO2 and DIO4 through DIO11 as well as input pins PB, DIO1 and RX to internal resources. If more than one input is connected to the same resource, the Multiple column in the table below specifies how they are combined. Resource Multiple NONE – Reserved OR T0 (Counter /Timer 0 clock or gate) OR T1 (Counter /Timer 1 clock or gate) OR High priority IO interrupt (int0 rising) OR Low priority IO interrupt (int1 rising) OR High priority IO interrupt (int0 fall110 OR ing) 111 Low priority IO interrupt (int1 falling) OR Programs the direction of DIO pins 7 through 1. 1 indicates an output. The bits are ignored if the pin is not configured as DIO. See DIO_PV and DIO_PW for special options for DIO6 and DIO7. See DIO_EEX[1:0] for special options for DIO4 and DIO5. Programs the direction of DIO pins 15 through 8. 1 indicates an output. The bits are ignored if the pin is not configured as I/O. See DIO_PX and DIO_PW for special options for the DIO8 and DIO9 outputs. Programs the direction of DIO17. The value on the DIO pins. Pins configured as LCD will read zero. When written, changes data on pins configured as outputs. Pins configured as LCD or input will ignore writes. DIO_0[7:1] corresponds to DIO7 through DIO1. PB is read on DIO_0[0]. DIO_1[7:0] corresponds to DIO15 through DIO8. DIO_2[1] corresponds to DIO17. DIO_3[5:4] corresponds to DIO28 and DIO29. When set, converts DIO4 and DIO5 to interface with external EEPROM. DIO4 becomes SDCK and DIO5 becomes bi-directional SDATA. DIO_Rx[2:0] 000 001 010 011 100 101 DIO_EEX[1:0] 00 01 10 11 Function Disable EEPROM interface 2-Wire EEPROM interface 3-Wire EEPROM interface not used DIO_DIR0[7:1] SFR A2 [7:1] 0 – R/W DIO_DIR1[7:0] DIO_DIR2[1] DIO_0[7:0] DIO_1[7:0] DIO_2[1] DIO_3[5:4] SFR 91 SFR A1[1] SFR 80 SFR 90 SFR A0[1] SFR B0[5:4] 0 0 0 0 0 0 – – − – – – R/W R/W R/W R/W R/W R/W DIO_EEX[1:0] 2008[7:6] 0 0 R/W 78 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Name DIO_PV DIO_PW DIO_PX DIO_PY EEDATA[7:0] EECTRL[7:0] ECK_DIS EQU[2:0] EX_XFR EX_RTC EX_FWCOL EX_PLL Location 2008[2] 2008[3] 200F[3] 200F[2] SFR 9E SFR 9F 2005[5] 2000[7:5] 2002[0] 2002[1] 2007[4] 2007[5] Reset 0 0 0 0 0 0 0 0 0 0 0 0 Wake 0 0 0 0 0 0 0 0 0 0 0 0 Dir R/W R/W R/W R/W R/W R/W R/W R/W R/W Data Sheet 71M6531D/F-71M6532D/F Description Causes VARPULSE to be output on DIO7. Causes WPULSE to be output on DIO6. Causes XPULSE to be output on DIO8. Causes YPULSE to be output on DIO9. Serial EEPROM interface data. Serial EEPROM interface control. Emulator clock disable. When ECK_DIS = 1, the emulator clock is disabled. If ECK_DIS is set, the emulator and programming devices will be unable to erase or program the device. Specifies the power equation to be used by the CE. Interrupt enable bits. These bits enable the XFER_BUSY, the RTC_1SEC, the FirmWareCollision (FWCOL) and PLL interrupts. Note that if one of these interrupts is to be enabled, its corresponding MPU EX enable must also be set. See Section 1.4.9 Interrupts for details. FIR_LEN[1:0] controls the length of the ADC decimation FIR filter and therefore controls the time taken for each conversion. [M40MHZ, M26MHZ] FIR_LEN[1:0] Resulting FIR Filter Cycles Resulting CK32 Cycles Resulting DC Gain FIR_LEN[1:0] 2007[3:2] 1 1 R/W FL_BANK[2:0] SFR B6[2:0] 1 1 R/W 00 138 1 0.110017 01 288 2 1.000 10 384 3 2.37037 [01] 00 186 1 0.113644 01 384 2 1.000 10 588 3 3.590363 Flash bank. Memory above 32 KB is mapped to the MPU address space from 0x8000 to 0xFFFF in 32 KB banks. When MPU address[15] = 1, the address in flash is mapped to FL_BANK[2:0], MPU Address[14:0]. FL_BANK is reset by the erase cycle. [00], [10], or [11] v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 79 Data Sheet 71M6531D/F-71M6532D/F Name Location Reset Wake Dir FDS 6531/6532 005 Description Flash Erase Initiate. (Default = 0x00). FLSH_ERASE is used to initiate either the Flash Mass Erase cycle or the Flash Page Erase cycle. Specific patterns are expected for FLSH_ERASE in order to initiate the appropriate Erase cycle. 0x55 = Initiate Flash Page Erase cycle. Must be proceeded by a write to FLSH_PGADR[5:0] @ SFR 0xB7. 0xAA = Initiate Flash Mass Erase cycle. Must be proceeded by a write to FLSH_MEEN @ SFR 0xB2 and the debug (CC) port must be enabled. Any other pattern written to FLSH_ERASE will have no effect. The erase cycle is not completed until 0x00 is written to FLSH_ERASE. Mass Erase Enable. 0 = Mass Erase disabled (default). 1 = Mass Erase enabled. Must be re-written for each new Mass Erase cycle. Flash Page Erase Address. (Default = 0x00) FLSH_PGADR[5:0] with FL_BANK[2:0], sets the Flash Page Address (page 0 through 127) that will be erased during the Page Erase cycle. Must be re-written for each new Page Erase cycle. Program Write Enable. This bit must be cleared by the MPU after each byte write operation. Write operations to this bit are inhibited when interrupts are enabled. 0 = MOVX commands refer to XRAM Space, normal operation (default). 1 = MOVX @DPTR,A moves A to Program Space (Flash) @ DPTR. Non-volatile general-purpose registers powered by the RTC supply. These registers maintain their value in all power modes, but will be cleared on reset. The values of GP0…GP7 will be undefined if VBAT drops below the minimum value. Interrupt flags for Firmware Collision Interrupt. See the Flash Memory section for details. PB flag. Indicates that a rising edge occurred on PB. Firmware must write a zero to this bit to clear it. The bit is also cleared when the MPU requests SLEEP or LCD mode. On bootup, the MPU can read this bit to determine if the part was woken with the PB (DIO0[0]). Indicates that the MPU was woken or interrupted (INT4) by system power becoming available, or more precisely, by PLL_OK rising. The firmware must write a zero to this bit to clear it. Indicates that the MPU has entered BROWNOUT mode because system power has become unavailable (INT4), or more precisely, because PLL_OK fell. This bit will not be set if the part wakes into BROWNOUT mode because of PB or the WAKE timer. The firmware must write a zero to this bit to clear it. SPI interrupt enable. v1.3 FLSH_ERASE [7:0] SFR 94[7:0] 0 0 W FLSH_MEEN SFR B2[1] 0 0 W FLSH_PGADR [5:0] SFR B7 [7:2] 0 0 W FLSH_PWE GP0 … GP7 IE_FWCOL0 IE_FWCOL1 IE_PB SFR B2[0] 20C0 … 20C7 SFR E8[2] SFR E8[3] SFR E8[4] 0 0 … 0 0 0 0 0 NV … NV 0 0 – R/W R/W R/W R/W R/W IE_PLLRISE SFR E8[6] 0 0 R/W IE_PLLFALL IEN_SPI 80 SFR E8[7] 20B0[4] 0 0 0 – R/W R/W © 2005-2010 TERIDIAN Semiconductor Corporation FDS 6531/6532 005 Name Location IEN_WD_NROVF 20B0[0] IE_XFER SFR E8[0] IE_RTC SFR E8[1] IE_WAKE INTBITS LCD_BITMAP [31:24] LCD_BITMAP [39:32] LCD_BITMAP [55:48] LCD_BITMAP [63:56] LCD_BITMAP [71:64] SFR E8[5] SFR F8[6:0] 2023 2024 2026 2027 2028 Reset 0 0 0 0 – 0 0 0 0 0 0 Wake 0 0 0 – – L L L L L L Dir R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W Data Sheet 71M6531D/F-71M6532D/F Description Active high watchdog near overflow interrupt enable. Interrupt flags. These flags monitor the XFER_BUSY interrupt and the RTC_1SEC interrupt. The flags are set by hardware and clear automatically. Indicates that the MPU was awakened by the autowake timer. This bit is typically read by the MPU on bootup. The firmware must write a zero to this bit to clear it. Interrupt inputs. The MPU may read these bits to see the status of external interrupts INT0, INT1 up to INT6. These bits do not have any memory and are primarily intended for debug use. Configuration for DIO11/SEG31 through DIO4/SEG24. Unused bits should be set to zero. 1 = LCD pin, 0 = DIO pin. Check Table 54 for bit availability. Bitmap of DIO19/SEG39 through DIO12/SEG32. Unused bits should be set to zero. 1 = LCD pin, 0 = DIO pin. Check Table 54 for bit availability. Bitmap of DIO28/SEG48 through DIO35/SEG55. Unused bits should be set to zero. 1 = LCD pin, 0 = DIO pin. Check Table 54 for bit availability. Bitmap of DIO36/SEG56 through DIO43/SEG63. Unused bits should be set to zero. 1 = LCD pin, 0 = DIO pin. Check Table 54 for bit availability. Bitmap of DIO44/SEG64 through DIO51/SEG71. Unused bits should be set to zero. 1 = LCD pin, 0 = DIO pin. Check Table 54 for bit availability. Identifies which segments connected to SEG18 and SEG19 should blink. 1 means blink. The most significant bit corresponds to COM3, the least significant bit to COM0. Sets the LCD clock frequency for COM/SEG pins (not frame rate) according to the following (fw = 32768 Hz): 00 = fw/29 01 = fw/28 10 = fw/27 11 = fw/26 LCD_BLKMAP19 205A[7:4] [3:0] LCD_BLKMAP18 205A[3:0] [3:0] LCD_CLK[1:0] 2021[1:0] 0 L R/W v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 81 Data Sheet 71M6531D/F-71M6532D/F Name Location Reset Wake Dir FDS 6531/6532 005 Description LCD contrast control DAC. Adjusts the LCD voltage in steps of 0.2 V from V3P3SYS (mission mode) or VBAT (brownout/LCD modes). LCD_DAC[2:0] 000 001 010 011 100 101 110 111 Resulting LCD Voltage V3P3 or VBAT V3P3 or VBAT – 0.2V V3P3 or VBAT – 0.4V V3P3 or VBAT – 0.6V V3P3 or VBAT – 0.8V V3P3 or VBAT – 1.0V V3P3 or VBAT – 1.2V V3P3 or VBAT – 1.4V LCD_DAC[2:0] 20AB[3:1] 0 L R/W LCD_E 2021[5] 0 L R/W Enables the LCD display. When disabled, VLC2, VLC1 and VLC0 are ground as are the COM and SEG outputs. The LCD bias mode. Use the LCD DAC in ANACTRL to reduce saturation. The number of states is the number of commons which are driven to multiplex the LCD. LCD_MODE[2:0] Function Notes 000 4 states, ⅓ bias ⅓ bias modes can drive 3.3 V LCDs. 001 3 states, ⅓ bias 010 2 states, ½ bias ½ bias and static modes can drive both 3.3 V and 5 V LCDs. 011 3 states, ½ bias 100 static display Puts the part to sleep, but with the LCD display still active. LCD_ONLY is ignored if system power is present. While in SLEEP mode, the device will wake up on reset, when the autowake timer times out, when the push button is pushed, or when system power returns. LCD Segment Data. Each word contains information for 1 to 4 time divisions of each segment. Some addresses are used to address two segments. In each word, bit 0 corresponds to COM0, bit 1 to COM1, bit 2 to COM2 and bit 3 to COM3 of the first segment. Bits 4 through 7 correspond to COM0 to COM3, respectively, of the second segment. Care should be taken when writing to LCD_SEG locations since some of them control DIO pins. LCD_MODE[2:0] 2021[4:2] 0 L R/W LCD_ONLY LCD_SEG0[3:0] … LCD_SEG19[3:0] LCD_SEG24[3:0] … LCD_SEG31[3:0] 20A9[5] 2030[3:0] … 2043[3:0] 2048[3:0] … 204F[3:0] 0 0 … 0 0 … 0 0 0 L … L L … L L W R/W … R/W R/W … R/W R/W LCD_SEG32[3:0] 2050[3:0] 82 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Name LCD_SEG33[3:0] … LCD_SEG35[3:0] LCD_SEG37[3:0] LCD_SEG39[3:0] … LCD_SEG41[3:0] LCD_SEG48[7:4] … LCD_SEG49[7:4] LCD_SEG63[7:4] … LCD_SEG66[7:4] LCD_SEG71[7:4] … LCD_SEG73[7:4] Data Sheet 71M6531D/F-71M6532D/F Reset 0 … 0 0 0 … 0 0 … 0 0 … 0 0 … 0 0 0 0 Wake L … L L L … L L … L L … L L … L L 0 0 Dir R/W … R/W R/W R/W … R/W R/W … R/W R/W … R/W R/W … R/W R/W R/W R/W LCD Blink Frequency (ignored if blink is disabled or if the segment is off). 0 = 1 Hz (500 ms ON, 500 ms OFF) 1 = 0.5 Hz (1 s ON, 1 s OFF) M26MHZ and M40MHZ set the master clock (MCK) frequency. These bits are reset on chip reset and may only be set. Attempts to write zeroes to M40MHZ and M26MHZ.are ignored. The MPU clock divider (from MCK). These bits may be programmed by MPU without risk of losing control. MPU_DIV[2:0] 000 001 010 011 100 101 110 111 Resulting Clock Frequency MCK/22 MCK/23 MCK/24 MCK/25 MCK/26 MCK/27 MCK/28 MCK/28 Description Location 2051[3:0] … 2053[3:0] 2055[3:0] 2057[3:0] … 2059[3:0] 2036[7:4] … 2037[7:4] 2045[7:4] … 2048[7:4] 204D[7:4] … 204F[7:4] 2021[6] 2005[4] 2005[0] LCD_Y M26MHZ M40MHZ MPU_DIV[2:0] 2004[2:0] 0 0 R/W v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 83 Data Sheet 71M6531D/F-71M6532D/F Name MUX_ALT MUX_DIV[3:0] MUX_SYNC_E Location 2005[2] 209D[3:0] 2020[7] Reset 0 0 0 Wake 0 0 0 Dir R/W R/W R/W FDS 6531/6532 005 Description The MPU asserts this bit when it wishes the MUX to perform ADC conversions on an alternate set of inputs. If CHOP_E[1:0] is 00, MUX_ALT is automatically asserted once per sumcycle, when XFER_BUSY falls. The number of states in the input multiplexer. When set, SEG7 outputs MUX_SYNC. Otherwise, SEG7 is an LCD pin. Selects the modulation duty cycle for OPT_TX. OPT_FDC[1:0] 00 01 10 11 Function 50% Low 25% Low 12.5% Low 6.25% Low OPT_FDC[1:0] 2007[1:0] 0 0 R/W OPT_RXDIS OPT_RXINV 2008[5] 2008[4] 0 0 0 0 R/W R/W Configures OPT_RX to an analog input to the optical UART comparator or as a digital input/output, DIO1: 0 = OPT_RX, 1 = DIO1. Inverts the result from the OPT_RX comparator when 1. Affects only the UART input. Has no effect when OPT_RX is used as a DIO input. Configures the OPT_TX output pin. OPT_TXE[1:0] 00 01 10 11 Function OPT_TX DIO2 WPULSE RPULSE OPT_TXE[1:0] 2007[7:6] 00 00 R/W OPT_TXINV OPT_TXMOD PLL_OK 2008[0] 2008[1] 2003[6] 0 0 0 FF 0 0 0 FF R/W R/W R R/W PLS_MAXWIDTH 2080[7:0] [7:0] PLS_INTERVAL [7:0] 2081[7:0] 0 0 R/W Inverts OPT_TX when 1. This inversion occurs before modulation. Enables modulation of OPT_TX. When OPT_TXMOD is set, OPT_TX is modulated when it would otherwise have been zero. The modulation is applied after any inversion caused by OPT_TXINV. Indicates that system power is present and the clock generation PLL is settled. Determines the maximum width of the pulse (low going pulse). The maximum pulse width is (2*PLS_MAXWIDTH + 1)*TI. Where TI is PLS_INTERVAL. If PLS_INTERVAL = 0, TI is the sample time (397 µs). If set to 255, pulse width control is disabled and pulses are output with a 50% duty cycle. For PULSE_W and PULSE_V only: If the FIFO is used, PLS_INTERVAL must be set to 81. If PLS_INTERVAL = 0, the FIFO is not used and pulses are output as soon as the CE issues them. 84 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Name PLS_INV PREBOOT Location 2004[6] SFRB2[7] 201C[2:0] 201D[7:0] 201E[7:2] Reset 0 – 4 0 0 Wake 0 – 4 0 0 Dir R/W R R/W R/W R/W Data Sheet 71M6531D/F-71M6532D/F Description Inverts the polarity of the pulse outputs. Normally, these pulses are active low. When inverted, they become active high. Indicates that the preboot sequence is active. RTC adjust. See Section 1.5.3 Real-Time Clock (RTC) for additional details. 0x0FFBF ≤ PREG[16:0] ≤ 0x10040 PREG[16:0] and QREG[1:0] are separate in hardware but can be programmed with a single number calculated by the MPU. The duration of the pre-summer, in samples. PRE_SAMPS[1:0] 00 01 10 11 Pre-summer Duration 42 50 84 100 PREG[16:0] PRE_SAMPS[1:0] 2001[7:6] 0 0 R/W QREG[1:0] RST_SUBSEC RTCA_ADJ[6:0] RTC_SEC[5:0 RTC_MIN[5:0] RTC_HR[4:0] RTC_DAY[2:0] RTC_DATE[4:0] RTC_MO[3:0] RTC_YR[7:0] RTM_E RTM0[9:0] RTM1[9:0] RTM2[9:0] RTM3[9:0] 201E[1:0] 2010[0] 2011[6:0] 2015 2016 2017 2018 2019 201A 201B 2002[3] 2060[9:8] 2061[7:0] 2062[9:8] 2063[7:0] 2064[9:8] 2064[7:0] 2065[9:8] 2066[7:0] 0 0 40 * * * * * * * 0 0 0 0 0 0 0 0 0 0 0 – NV NV NV NV NV NV NV 0 0 0 0 0 0 0 0 0 R/W R/W R/W R/W R/W RTC adjust. See Section 1.5.3 Real-Time Clock (RTC) for additional details. The sub-second counter is restarted when a 1 is written to this bit. Analog RTC adjust. See Section 1.5.3 Real-Time Clock (RTC) for additional details. These are the year, month, day, hour, minute and second parameters of the RTC. Writing to these registers sets the time. Each write operation to one of these registers must be preceded by a write to 0x201F (WE). Valid values for each parameter are: SEC: 00 to 59, MIN: 00 to 59, HR: 00 to 23 (00 = Midnight) DAY: 01 to 07 (01 = Sunday), DATE: 01 to 31, MO: 01 to 12 YR: 00 to 99 (00 and all others divisible by 4 are leap years) Values in the RTC registers are undefined when the IC powers up without a battery but are maintained through mission and battery modes when a sufficient voltage is maintained at the VBAT pin. * no change of value at reset. Real Time Monitor (RTM) enable. When 0, the RTM output is low. R/W The four RTM probes. Before each CE code pass, the values of these registers are serially output on the RTM pin. The RTM registers are ignored when RTM_E = 0. v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 85 Data Sheet 71M6531D/F-71M6532D/F Name SECURE Location SFRB2[6] Reset 0 Wake – Dir R/W FDS 6531/6532 005 Description When set, enables security provisions that prevent external reading of the flash memory (zeros will be returned if the flash is read). SECURE should be set during the preboot phase, i.e. while PREBOOT is set. SECURE is cleared when the flash is mass-erased and when the chip is reset. The bit may only be set, attempts to write zero are ignored. When set to 1, selects differential mode for the current input (IAP, IAN). When 0, the input remains single-ended (71M6532D/F only). When set to 1, selects differential mode for the current input (IBP, IBN). When 0, the input remains single-ended (71M6532D/F only). Puts the 71M6531 into SLEEP mode. This bit is ignored if system power is present. The 71M6531 will wake when the autowake timer times out, when the push button is pushed, when system power returns, or when RESET goes high. Primary multiplexer frame analog input selection. These bits map the selected input, 0-3 to the multiplexer state. The ADC output is always written to the memory location corresponding to the input, regardless of which multiplexer state an input is mapped to (see Section 1.2 Analog Front End (AFE)). SEL_IAN SEL_IBN SLEEP SLOT0_SEL[3:0] SLOT1_SEL[3:0] SLOT2_SEL[3:0] SLOT3_SEL[3:0] SLOT0_ALTSEL [3:0] SLOT1_ALTSEL [3:0] SLOT2_ALTSEL [3:0] SLOT3_ALTSEL [3:0] SP_ADDR[15:8] SP_ADDR[7:0] SP_CMD SPE SPI_FLAG 20AC[1] 20AC[5] 20A9[6] 2090[3:0] 2090[7:4] 2091[3:0] 2091[7:4] 2096[3:0] 2096[7:4] 2097[3:0] 2097[7:4] 2072[7:0] 2073[7:0] 2071 2070[7] 20B1[4] 0 0 0 0 1 2 3 A 1 2 3 0 0 0 0 1 – 0 0 0 0 1 2 3 A 1 B 3 0 0 0 0 1 – R/W R/W W R/W R/W Alternate multiplexer frame analog input selection. Maps the selected input to the multiplexer state. The additional inputs, 10 and 11 in the alternate frame are: 10 = TEMP 11 = VBAT R R R R/W R/W SPI Address. 16-bit address from the bus master. SPI command. 8-bit command from the bus master. SPI port enable. Enables the SPI interface on pins SEG3 through SEG5. SPI interrupt flag. The flag is set by the hardware and is cleared by the firmware writing a 0. Firmware using this interrupt should clear the spurious interrupt indication during initialization. The remaining count, in terms of 1/256 RTC cycles, to the next one second boundary. SUBSEC may be read by the MPU after the one second interrupt and before reaching the next one second boundary. Setting RST_SUBSEC will clear SUBSEC. The number of pre-summer outputs summed in the final summing stage of the CE. Selects one of 32 signals for TMUXOUT. For details, see Section 1.5.17 Test Ports (TMUXOUT pin). Contains fuse information, depending on the value written to TRIMSEL[3:0]. v1.3 SUBSEC[7:0] SUM_CYCLES [5:0] TMUX[4:0] TRIM[7:0] 86 2014[7:0] 2001[5:0] 20AA[4:0] 20FF R R/W R/W R/W 0 2 0 0 – 0 © 2005-2010 TERIDIAN Semiconductor Corporation FDS 6531/6532 005 Name TRIMSEL[3:0] VERSION[7:0] Location 20FD[3:0] 2006 20C8 Reset 0 – – Wake 0 – – Dir R/W R R Data Sheet 71M6531D/F-71M6532D/F Description Selects the trim fuse to be read with the TRIM register: TRIMSEL[3:0] 1 Trim Fuse TRIMT[7:0] Purpose Trim for the magnitude of VREF The device version index. This word may be read by the firmware to determine the silicon version. VERSION[7:0] 0001 0101 Silicon Version A05 VREF_CAL VREF_DIS WAKE_ARM WAKE_PRD WAKE_RES WD_NROVF_ FLAG WD_RST 2004[7] 2004[3] 20A9[7] 20A9[2:0] 20A9[3] 20B1[0] SFR F8[7] 0 0 0 001 0 – 0 0 0 – – – 0 0 R/W R/W W R/W R/W R/W W WD_OVF WE WRPROT_BT WRPROT_CE 2002[2] 201F[7:0] SFR B2[5] SFR B2[4] 0 – 0 0 0 – 0 0 R/W W Brings VREF to the VREF pad. This feature is disabled when VREF_DIS =1. Disables the internal voltage reference. Arm the autowake timer. Writing a 1 to this bit arms the autowake timer and presets it with the values presently in WAKE_PRD and WAKE_RES. The autowake timer is reset and disarmed whenever the IC is in MISSION or BROWNOUT mode. The timer must be armed at least three RTC cycles before the SLEEP or LCD-ONLY mode is commanded. Sleep time. Time = WAKE_PRD[2:0]*WAKE_RES. Default = 001. Maximum value is 7. Resolution of WAKE timer: 1 = 1 minute, 0 = 2.5 seconds. This flag is set approximately 1 ms before the watchdog timer overflows. It is cleared by writing a 0 or on the falling edge of WAKE. WD timer bit. This bit must be accessed with byte operations. Operations possible for this bit are: Write 0xFF: Resets the WDT. The WD overflow status bit. This bit is set when the WD timer overflows. It is powered by the nonvolatile supply and at bootup will indicate if the part is recovering from a WD overflow or a power fault. This bit should be cleared by the MPU on bootup. It is also automatically cleared when RESET is high. An 8-bit value has to be written to this address prior to accessing the RTC registers. When set, this bit protects flash addresses from 0 to BOOT_SIZE*1024 from flash page erase. When set, this bit protects flash addresses from CE_LCTN*1024 to the end of memory from flash page erase. v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 87 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 4.3 4.3.1 CE Interface Description CE Program The CE performs the precision computations necessary to accurately measure energy. Different code variations are used for EQU[2:0] = 0 and EQU[2:0] = 1 or 2. The computations include offset cancellation, products, product smoothing, product summation, frequency detection, VAR calculation, sag detection, peak detection and voltage phase measurement. All data computed by the CE is dependent on the selected meter equation as given by EQU[2:0]. Although EQU[2:0] = 0 and EQU[2:0] = 2 have the same element mapping, the MPU code can use the value of EQU[2:0] to decide if element 2 is used for tamper detection (typically done by connecting VB to VA) or as a second independent element. The CE program is supplied by Teridian as a data image that can be merged with the MPU operational code for meter applications. Typically, the CE program covers most applications and does not need to be modified. Other variations of CE code may be available from TERIDIAN. The description in this section applies to CE code revision CE31A04 (for EQU[2:0] = 0). Deviations for code revision CE31A03 (for EQU[2:0] = 1 or 2) are noted where applicable. 4.3.2 CE Data Format All CE words are 4 bytes. Unless specified otherwise, they are in 32-bit two’s complement format (-1 = 0xFFFFFFFF). Calibration parameters are defined in flash memory (or external EEPROM) and must be copied to CE data memory by the MPU before enabling the CE. Internal variables are used in internal CE calculations. Input variables allow the MPU to control the behavior of the CE code. Output variables are outputs of the CE calculations. The corresponding MPU address for the most significant byte is given by 0x0000 + 4 x CE_address and by 0x0003 + 4 x CE_address for the least significant byte. 4.3.3 • • • • • • • • • Constants Constants used in the CE Data Memory tables are: FS = 32768 Hz/13 = 2520.62 Hz. F0 is the fundamental frequency. IMAX is the external rms current corresponding to 250 mV pk at the inputs IA and IB. VMAX is the external rms voltage corresponding to 250 mV pk at the VA and VB inputs. NACC, the accumulation count for energy measurements is PRE_SAMPS[1:0]*SUM_CYCLES[5:0]. The duration of the accumulation interval for energy measurements is PRE_SAMPS[1:0]*SUM_CYCLES[5:0]/FS ln_8 is a gain constant of the current channel, n. Its value is 8 or 1 and is controlled by In_SHUNT. X is a gain constant of the pulse generators. Its value is determined by PULSE_FAST and PULSE_SLOW. Voltage LSB for sag detection = VMAX * 7.8798*10-6 V. The system constants IMAX and VMAX are used by the MPU to convert internal quantities (as used by the CE) to external, i.e. metering quantities. Their values are determined by the off-chip scaling of the voltage and current sensors used in an actual meter. The LSB values used in this document relate digital quantities at the CE or MPU interface to external meter input quantities. For example, if a SAG threshold of 80 V peak is desired at the meter input, the digital value that should be programmed into SAG_THR would be 80/SAG_THRLSB, where SAG_THRLSB is the LSB value in the description of SAG_THR. The parameters EQU[2:0], CE_E, PRE_SAMPS[1:0] and SUM_CYCLES[5:0] essential to the function of the CE are stored in I/O RAM (see Section 4.2 I/O RAM Description – Alphabetical Order). 4.3.4 Environment Before starting the CE using the CE_E bit, the MPU has to establish the proper environment for the CE by implementing the following steps (for CE31A04 code): Load the CE data into RAM. Establish the equation to be applied in EQU[2:0]. The CE code has to match the selected equation. Establish the accumulation period and number of samples in PRE_SAMPS[1:0] = 0 (multiplier = 42) and SUM_CYCLES[5:0] = 0x3C (60). • Set PLS_INTERVAL[7:0] to 81. • Select the values for FIR_LEN[1:0] = 2 and MUX_DIV[3:0] = 4. 88 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 • • • FDS 6531/6532 005 • • • • Data Sheet 71M6531D/F-71M6532D/F Select the values for SLOT0_SEL[3:0] = 0, SLOT1_SEL[3:0] = 1, SLOT2_SEL[3:0] = 2, SLOT3_SEL[3:0] =3 Select the values for SLOT0_ALTSEL[3:0] = 0x0A, SLOT1_ALTSEL[3:0] = 1, SLOT2_ALTSEL[3:0] = 0x0B, SLOT3_ALTSEL[3:0] = 3. Set CHOP_E[1:0] = 00. Initialize any MPU interrupts, such as CE_BUSY, XFER_BUSY, or a power failure detection interrupt. When different CE codes are used, a different set of environment parameters needs to be established. The exact values for these parameters are stated in the Application Notes and other documentation accompanying the CE codes. CE codes should only be used with environment parameters specified in this document or in the applicable CE code description. Changing environment parameters at random will lead to unpredictable results. Typically, there are thirteen 32768 Hz cycles per ADC multiplexer frame (see Figure 19). This means that the product of the number of cycles per frame and the number of conversions per frame must be 12 (allowing for one settling cycle). During operation, CHOP_E[1:0] = 00 enables the automatic chopping mode and forces an alternate multiplexer sequence at regular intervals. This enables accurate temperature measurement. 4.3.5 CE Calculations Table 56: CE EQU[2:0] Equations and Element Input Mapping Element Input Mapping W0SUM/ VAR0SUM VA*IA VA*(IA-IB)/2 VA*IA W1SUM/ VAR1SUM VA*IB (VA * IB)/2 VB*IB I0SQSUM IA IA-IB IA I1SQSUM IB IB IB EQU[2:0] Watt & VAR Formula (WSUM/VARSUM) VA IA (1 element, 2W 1φ) with tamper detection VA*(IA-IB)/2 (1 element, 3W 1φ) VA*IA + VB*IB (2 element, 4W 2φ) 0 1 2 4.3.6 CE Status and Control The CESTATUS register provides information about the status of voltage and input AC signal frequency, which are useful for generating early power fail warnings, e.g. to initiate necessary data storage. It contains sag warning flags for VA and VB as well as F0, the derived clock operating at the fundamental input frequency. CESTATUS represents the status flags for the preceding CE code pass (CE busy interrupt). Sag alarms are not remembered from one code pass to the next. The CE Status word is refreshed at every CE_BUSY interrupt. The significance of the bits in CESTATUS is shown in Table 57. CE Address 0x80 Name CESTATUS Description See description of CESTATUS bits in Table 57. Since the CE_BUSY interrupt typically occurs at 2520.6 Hz, it is desirable to minimize the computation required in the interrupt handler of the MPU. Rather than reading the CE status word at every CE_BUSY interrupt and interpret the sag bits, it is recommended that the MPU activate the YPULSE output to generate interrupts when a sag occurs (see the description of the CECONFIG register) v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 89 Data Sheet 71M6531D/F-71M6532D/F Table 57: CESTATUS (CE RAM 0x80) Bit Definitions CESTATUS [bit] 31:29 28 27 26 Name Not Used F0 Reserved SAG_B FDS 6531/6532 005 Description These unused bits will always be zero. F0 is a square wave at the exact fundamental frequency for the phase selected with the FREQSELn bits in CECONFIG. Normally zero. Becomes one when VB remains below SAG_THR for SAG_CNT samples. Will not return to zero until VB rises above SAG_THR. Normally zero. Becomes one when VA remains below SAG_THR for SAG_CNT samples. Will not return to zero until VA rises above SAG_THR. These unused bits will always be zero. 25 24:0 SAG_A Not Used The CE is initialized and its functions are controlled by the MPU using CECONFIG. This register contains in packed form SAG_CNT, FREQSEL, EXT_PULSE, I0_SHUNT, I1_SHUNT, PULSE_SLOW and PULSE_FAST. The CECONFIG bit definitions are given in Table 58. CE Address 0x20 Name CECONFIG Data 0x5020 Description See description of the CECONFIG bits in Table 58. IA_SHUNT and/or IB_SHUNT can configure their respective current inputs to accept shunt resistor sensors. In this case the CE provides an additional gain of 8 to the selected current input. WRATE may need to be adjusted based on the values of IA_SHUNT and IB_SHUNT. Whenever IA_SHUNT or IB_SHUNT are set to 1, In_8 (in the equation for Kh) is assigned a value of 8. The CE pulse generator can be controlled by either the MPU (external) or CE (internal) variables. Control is by the MPU if EXT_PULSE = 1. In this case, the MPU controls the pulse rate by placing values into APULSEW, APULSER, APULSE2 and APULSE3. By setting EXT_PULSE = 0, the CE controls the pulse rate based on W0SUM_X and VAR0SUM_X (EQU[2:0] = 0) or WSUM_X (EQU[2:0] = 2). If EXT_PULSE = 0 and EQU[2:0] = 2, the pulse inputs are W0SUM_X + W1SUM_X and VAR0SUM_X + VAR1SUM_X. In this case, creep cannot be controlled since creep is an MPU function. If EXT_PULSE = 0 and EQU[2:0] = 0, the pulse inputs are W0SUM_X if I0SQSUM_X > I1SQSUM_X and W1SUM_X, if I1SQSUM_X > I0SQSUM_X. The 71M6531 Demo Code creep function halts both internal and external pulse generation. The EXT_TEMP bit controls the temperature compensation mode: • When EXT_TEMP = 0 (internal compensation), the CE will control the gain using GAIN_ADJ (see Table 60) based on PPMC, PPMC2 and TEMP_X, the difference between die temperature and the reference / calibration temperature TEMP_NOM. Since PPMC and PPMC2 reflect the typical behavior of the reference voltage over temperature, the internal temperature compensation eliminates the effects of temperature-related errors of VREF only. When EXT_TEMP = 1 (external compensation), the MPU is allowed to control the CE gain using GAIN_ADJ, based on any algorithm implemented in MPU code. • The FREQSEL1 and FREQSEL0 bits select the phase used to control the CE-internal PLL. CE accuracy depends on the channel selected by the FREQSEL1 and FREQSEL0 bits receiving a clean voltage signal. 90 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F Table 58: CECONFIG Bit Definitions CECONFG [bit] [19] [18] Name SAG_MASK1 SAG_MASK0 Default 0 0 Description Sets the sag control of phase B. Sets the sag control of phase A. If more than one sag mask is set, a sag interrupt will only be generated when all phases enabled for the interrupt sag. When set, enables the sag interrupt to be output on the YPULSE/DIO9 pin. When set, enables the control of GAIN_ADJ by the MPU. When 0, enables the control of GAIN_ADJ by the CE. The number of consecutive voltage samples below SAG_THR before a sag alarm is declared. The maximum value is 255. SAG_THR is at address 0x24. The combination of FREQSEL1 and FREQSEL0 selects the phase to be used for the frequency monitor, the phase-to-phase lag calculation, the zero-crossing counter MAINEDGE_X and the F0 bit (CESTATUS[28]). FREQSEL1/FREQSEL0 = 0/0: Phase A FREQSEL1/FREQSEL0 = 0/1: Phase B When zero, causes the pulse generators to respond to internal data (PULSE0 = WSUM_X, PULSE1 = VARSUM_X., PULSE2 = VASUM_X). Otherwise, the generators respond to values the MPU places in APULSEW and APULSER. Unused. When 1, the current gain of channel B is increased by 8. The gain factor controlled by In_SHUNT is referred to as In_8 throughout this document. When 1, the current gain of channel A is increased by 8. When PULSE_FAST = 1, the pulse generator input is increased 16x. When PULSE_SLOW = 1, the pulse generator input is reduced by a factor of 64. These two bits control the pulse gain factor X (see table below). Default is 0 for both (X = 6). PULSE_SLOW PULSE_FAST X 2 0 0 1.5 * 2 = 6 0 1 1.5 * 26 = 96 1 0 1.5 * 2-4 = 0.09375 1 1 Do not use [17] [16] [15:8] SAG_INT EXT_TEMP SAG_CNT 0 0 80 (0x50) 0 [7] FREQSEL1 [6] FREQSEL0 0 [5] [4] [3] [2] EXT_PULSE – IB_SHUNT IA_SHUNT 1 0 0 0 [1] PULSE_FAST 0 [0] PULSE_SLOW 0 Table 59: Sag Threshold Control CE Address 0x24 Name SAG_THR Default 443000 Description The threshold for sag warnings. The default value is equivalent to 80 V RMS if VMAX = 600 V. The LSB value is VMAX * 4.255*10-7 V (peak). Table 60: Gain Adjust Control CE Address 0x40 v1.3 Name GAIN_ADJ Default 16384 Description This register scales all voltage and current channels. The default value is equivalent unity gain (1.000). 91 © 2005-2010 TERIDIAN Semiconductor Corporation Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 4.3.7 CE Transfer Variables When the MPU receives the XFER_BUSY interrupt, it knows that fresh data is available in the transfer variables. CE transfer variables are modified during the CE code pass that ends with an XFER_BUSY interrupt. They remain constant throughout each accumulation interval. In this data sheet, the names of CE transfer variables always end with _X. The transfer variables can be categorized as: 1. Fundamental energy measurement variables 2. Instantaneous (RMS) values 3. Other measurement parameters Fundamental Energy Measurement Variables Table 61 describes each transfer variable for fundamental energy measurement. All variables are signed 32-bit integers. Accumulated variables such as WSUM are internally scaled so they have at least 2x margin before overflow when the integration time is one second. Additionally, the hardware will not permit output values to fold back upon overflow. Table 61: CE Transfer Variables CE Address 0x85 0x86 0x87 Name Description For EQU[2:0] = 2, this register holds the calculated sum of Wh samples from each wattmeter element (In_8 is the gain of 1 or 8 configured by IA_SHUNT or IB_SHUNT). LSB = 6.6952*10-13 VMAX IMAX / In_8 Wh. The sum of Wh samples from each wattmeter element (In_8 is the gain of 1 or 8 configured by IA_SHUNT or IB_SHUNT). LSB = 6.6952*10-13 VMAX IMAX / In_8 Wh. For EQU[2:0] = 2, this register holds the calculated sum of VARh samples from each element (In_8 is the gain of 1 or 8 configured by IA_SHUNT or IB_SHUNT). LSB = 6.6952*10-13 VMAX IMAX / In_8 VARh. The sum of VARh samples from each element (In_8 is the gain 1 or 8 configured by IA_SHUNT or IB_SHUNT). LSB = 6.6952*10-13 VMAX IMAX / In_8 VARh. WSUM_X W0SUM_X W1SUM_X 0x8A 0x8B 0x8C VARSUM_X VAR0SUM_X VAR1SUM_X WxSUM_X is the Wh value accumulated for element X in the last accumulation interval and can be computed based on the specified LSB value. For example, with VMAX = 600 V and IMAX = 208 A, the LSB for WxSUM_X is 0.08356 µWh. Instantaneous Measurement Variables Table 62 contains various measurement results. The Frequency measurement is computed for the phase selected with FREQSELn bits in the CECONFIG register. IxSQSUM_X and VxSQSUM are the squared current and voltage samples acquired during the last accumulation interval. They can be used to calculate RMS voltages and currents. INSQSUM_X can be used for computing the neutral current. Table 62: CE Energy Measurement Variables CE Address 0x82 0x8F 92 Name Fundamental frequency. FREQ_X LSB ≡ Description FS ≈ 0.587 ⋅ 10 −6 Hz 32 2 v1.3 I0SQSUM_X The sum of squared current samples from each element. © 2005-2010 TERIDIAN Semiconductor Corporation FDS 6531/6532 005 0x90 0x93 0x94 0x45 0x46 0x47 0x48 0x99 0x9A I1SQSUM_X V0SQSUM_X V1SQSUM_X WSUM_ACCUM VSUM_ACCUM SUM3_ACCUM SUM4_ACCUM I0SQRES_X I1SQRES_X Data Sheet 71M6531D/F-71M6532D/F LSBI = 6.6952*10-13 IMAX2 / In_82 A2h The sum of squared voltage samples from each element. LSBV= 6.6952*10-13 VMAX2 V2h These registers contain roll-over accumulators for WPULSE and VPULSE respectively. These registers contain roll-over accumulators for pulse outputs XPULSE and YPULSE respectively. These registers hold residual current measurements with doubleprecision accuracy. The exact current ISQn is: ISQn = InSQSUM_X + 232 * InSQRES_X The RMS values can be computed by the MPU from the squared current and voltage samples as follows: Ix RMS = IxSQSUM ⋅ LSBI ⋅ 3600 ⋅ FS N ACC VxRMS = VxSQSUM ⋅ LSBV ⋅ 3600 ⋅ FS N ACC Other Measurement Parameters Table 63 describes the CE measurement parameters listed below: • • • • MAINEDGE_X: Useful for implementing a real-time clock based on the input AC signal. MAINEDGE_X is the number of half-cycles accounted for in the last accumulated interval for the AC signal. TEMP_RAW: May be used by the MPU to monitor the chip temperature or to implement temperature compensation. GAIN_ADJ: A scaling factor for measurements based on the temperature. GAIN_ADJ can be controlled by the MPU for temperature compensation. VBAT_SUM_X: This result can be used to calculate the measured battery voltage (VBAT). Table 63: Useful CE Measurement Parameters CE Address 0x83 0x81 0x9D Name MAINEDGE_X TEMP_RAW_X TEMP_X Default N/A N/A N/A Description The number of zero crossings of the voltage selected with FREQSELn in the previous accumulation interval. Zero crossings are either direction and are debounced. The filtered, un-scaled reading from the temperature sensor. This register contains the difference between the die temperature and the reference/calibration temperature as established in the TEMP_NOM register, measured in 0.1°C. Scales all voltage and current inputs. A value of 16384 provides unity gain. This register is used by the CE or by the MPU to implement temperature compensation. Output of the battery measurement. This value is equivalent to twice the measured ADC value. 0x40 0x84 GAIN_ADJ VBAT_SUM_X 16384 N/A 4.3.8 Pulse Generation Table 64 describes the CE pulse generation parameters WRATE, APULSEW, APULSER, APULSE2 and APULSE3. WRATE controls the number of pulses that are generated per measured Wh and VARh quantities. The lower WRATE is the slower the pulse rate for measured energy quantity. The metering constant Kh is derived from WRATE as the amount of energy measured for each pulse. That is, if Kh = 1 Wh/pulse, a power applied to the meter of 120 V and 30 A (3,600 W) results in one pulse per second. If the load is 240 V at 150 A (36,000 W), ten pulses per second will be generated. The maximum pulse rate is 7.5 kHz for APULSEW and APULSER and 1.2 kHz for APULSE2 and APULSE3. v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 93 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 The maximum time jitter is 67 µs and is independent of the number of pulses measured. Thus, if the pulse generator is monitored for one second, the peak jitter is 67 ppm. After 10 seconds, the peak jitter is 6.7 ppm. The average jitter is always zero. If it is attempted to drive either pulse generator faster than its maximum rate, it will simply output at its maximum rate without exhibiting any rollover characteristics. The actual pulse rate, using WSUM as an example, is: RATE = WRATE ⋅ WSUM ⋅ FS ⋅ X Hz , 2 46 where FS = sampling frequency (2520.6 Hz) and X = Pulse speed factor (as defined in the CECONFIG register with the PULSE_FAST and PULSE_SLOW bits). Table 64: CE Pulse Generation Parameters CE Address Name Default Description Kh = VMAX*IMAX*47.1132 / (In_8*WRATE*NACC*X) Wh/pulse. The default value results in a Kh of 1.0 Wh/pulse when 2520 samples are taken in each accumulation interval (and VMAX=600, IMAX = 442 [for 400µΩ shunt], In_8 = 1, X = 6). Maximum value = 215 -1. Watt pulse generator input (see DIO_PW bit). The output pulse rate is: APULSEW * FS * 2-32 * WRATE * X * 2-14. This input is buffered and can be loaded during a computation interval. The change will take effect at the beginning of the next interval. VAR pulse generator input (see DIO_PV bit). The output pulse rate is: APULSER * FS*2-32 * WRATE * X * 2-14. This input is buffered and can be loaded during a computation interval. The change will take effect at the beginning of the next interval. Third pulse generator input (see DIO_PV bit). The output pulse rate is: APULSE2 * FS*2-32 * WRATE * X * 2-14. This input is buffered and can be loaded during a computation interval. The change will take effect at the beginning of the next interval. Fourth pulse generator input (see DIO_PV bit). The output pulse rate is: APULSE3 * FS*2-32 * WRATE * X * 2-14. This input is buffered and can be loaded during a computation interval. The change will take effect at the beginning of the next interval. Register for pulse width control of XPULSE and YPULSE. The maximum pulse width is (2*PULSEWIDTH+1)*(1/FS). The default value will generate pulses of 10 ms width at FS = 2520.62 Hz. 0x21 WRATE 827 0x41 APULSEW 0 0x42 APULSER 0 0x43 APULSE2 0 0x44 APULSE3 0 0x38 PULSE WIDTH 12 4.3.9 CE Calibration Parameters Table 65: CE Calibration Parameters Table 65 lists the parameters that are typically entered to effect calibration of meter accuracy. CE Address 0x10 0x11 0x12 0x13 0x18 Name CAL_IA CAL_VA CAL_IB CAL_VB Default 16384 16384 16384 16384 Description These constants control the gain of their respective channels. The nominal value for each parameter is 214 = 16384. The gain of each channel is directly proportional to its gain constant. Thus, if the gain of the IA channel is 1% slow, CAL_IA should be scaled by 1/(1 – 0.01) and the resulting value is 16549. These two constants control the CT phase compensation. No compensation occurs when PHADJ_X = 0. As PHADJ_X is increased, more compensation (lag) is introduced. Range: ± 215 – 1. If it is desired to delay the current by the angle Φ, the equations are: PHADJ_A 0 94 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 CE Address Name Default Data Sheet 71M6531D/F-71M6532D/F Description PHADJ _ X = 2 20 0x19 PHADJ_B 0 PHADJ _ X = 2 20 0.02229 ⋅ TANΦ at 60Hz 0.1487 − 0.0131 ⋅ TANΦ 0x1F TEMP_NOM 0 0x39 DEGSCALE 9174 0.0155 ⋅ TANΦ at 50Hz 0.1241 − 0.009695 ⋅ TANΦ This register contains the reference point for the temperature measurement. At calibration temperature, the value read at TEMP_RAW_X should be written to TEMP_NOM. The CE will calculate the chip temperature TEMP_X relative to the reference temperature. The scale factor for the temperature calculation. It is not necessary to use values other than the default value. 4.3.10 Other CE Parameters Table 66 shows the CE parameters used for suppression of noise due to scaling and truncation effects. The table also includes the parameter which indicates the CE Code version. Table 66: CE Parameters for Noise Suppression and Code Version CE Address 0x22 0x26 0x27 0x2A 0x2B 0x2E 0x2F 0x35 0x36 0x37 Name KVAR QUANT_A QUANT_B QUANT_VARA QUANT_VARB QUANT_IA QUANT_IB 0x63653331 0x61303463 0x00000000 Default 6448 0 0 0 0 0 0 Description This is the scale factor for the VAR calculation. No value other than the default value should be applied. These parameters are added to the Watt calculation for element 0 and 1 to compensate for input noise and truncation. LSB = (VMAX*IMAX / In_8) *7.4162*10-10 W These parameters are added to the VAR calculation for element A and B to compensate for input noise and truncation. LSB = (VMAX*IMAX / In_8) * 7.4162*10-10 W These parameters are added to compensate for input noise and truncation in their respective channels in the squaring calculations for I2 and V2. LSB = VMAX2*7.4162*10-10 V2 and LSB = (IMAX2/In_82)*7.4162*10-10 A2 Text strings holding the CE version information as supplied by the CE data associated with the CE code. For example, the words 0x63653331 and 0x61303463 form the text string “ce31a04c”. These locations are overwritten in operation. 4.3.11 CE Flow Diagrams Figure 41 through Figure 43 show the data flow through the CE in simplified form. Functions not shown include delay compensation, sample interpolation, scaling and processing of meter equations. v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 95 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 Figure 41: CE Data Flow: Multiplexer and ADC Figure 42: CE Data Flow: Scaling, Gain Control, Intermediate Variables 96 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F Figure 43: CE Data Flow: Squaring and Summation Stages v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 97 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 5 5.1 Electrical Specifications Absolute Maximum Ratings Table 67 shows the absolute maximum ranges for the device. Stresses beyond Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation at these or any other conditions beyond those indicated under recommended operating conditions (Section 5.3) is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages are with respect to GNDA. Table 67: Absolute Maximum Ratings Voltage and Current Supplies and Ground Pins V3P3SYS, V3P3A VBAT GNDD Analog Output Pins V3P3D VREF V2P5 Analog Input Pins IA, VA, IB, VB, V1 XIN, XOUT All Other Pins Configured as SEG or COM drivers Configured as Digital Inputs Configured as Digital Outputs All other pins Temperature and ESD Stress Operating junction temperature (peak, 100ms) Operating junction temperature (continuous) Storage temperature Solder temperature – 10 second duration ESD stress on all pins -1 mA to +1 mA, -0.5 to V3P3D+0.5 -10 mA to +10 mA, -0.5 to 6 V -15 mA to +15 mA, -0.5 V to V3P3D+0.5 V −0.5 V to V3P3D+0.5 V 140 °C 125 °C −45 °C to +165 °C 250 °C 4 kV -10 mA to +10 mA -0.5 V to V3P3A+0.5 V -10 mA to +10 mA -0.5 V to 3.0 V −0.5 V to 4.6 V -0.5 V to 4.6 V -0.5 V to +0.5 V -10 mA to 10 mA, -0.5 V to 4.6 V -10 mA to +10 mA, -0.5 V to V3P3A+0.5 V -10 mA to +10 mA, -0.5 V to 3.0 V 98 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 5.2 Recommended External Components Table 68: Recommended External Components From V3P3A V3P3D V3P3SYS V2P5 XIN XIN XOUT To Function Value Unit † Name C1 C2 CSYS C2P5 XTAL CXS CXL Notes: AGND GNDD GNDD GNDD XOUT AGND AGND Bypass capacitor for 3.3 V supply Bypass capacitor for 3.3 V output Bypass capacitor for V3P3SYS Bypass capacitor for V2P5 32.768 kHz crystal – electrically similar to ECS .327-12.5-17X or Vishay XT26T, load capacitance 12.5 pF Load capacitor for crystal (depends on crystal specs and board parasitics). Load capacitor for crystal (depends on crystal specs and board parasitics). ≥0.1 ±20% ≥0.1 ±20% † ≥1.0 ±30% 0.1 ±20% 32.768 33 ±10% 15 ±10% µF µF µF µF kHz pF pF 1. AGND and GNDD should be connected together. 2. V3P3SYS and V3P3A should be connected together. † For accuracy and EMI rejection, C1 + C2 should be 470 µF or higher. 5.3 Recommended Operating Conditions Table 69: Recommended Operating Conditions Condition Normal Operation Battery Backup No Battery Battery Backup: BRN and LCD modes SLEEP mode Min 3.0 0 Typ 3.3 Max 3.6 3.6 Unit V V Parameter V3P3SYS, V3P3A: 3.3 V Supply Voltage V3P3A and V3P3SYS must be at the same voltage VBAT Operating Temperature Externally Connect to V3P3SYS 3.0 2.0 -40 3.8 3.8 +85 V V ºC v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 99 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 5.4 5.4.1 Performance Specifications Input Logic Levels Table 70: Input Logic Levels Condition Min 2 Typ Max 0.8 VIN=0 V, ICE_E=1 10 10 -1 VIN = V3P3D 10 10 -1 -1 100 100 1 1 µA µA µA µA 100 100 1 µA µA µA Unit V V Parameter Digital high-level input voltagea, VIH Digital low-level input voltagea, VIL Input pull-up current, IIL E_RXTX, E_RST, CKTEST Other digital inputs Input pull down current, IIH ICE_E RESET PB Other digital inputs a 0 0 0 In battery powered modes, digital inputs should be below 0.3 V or above 2.5 V to minimize battery current. 5.4.2 Output Logic Levels Table 71: Output Logic Levels Condition ILOAD = 1 mA ILOAD = 15 mA ILOAD = 1 mA ILOAD = 15 mA ISOURCE=1 mA ISINK=20 mA Min V3P3D–0.4 V3P3D-0.6 0 Typ Max Unit V V V V V V Parameter Digital high-level output voltage VOH Digital low-level output voltage VOL OPT_TX VOH (V3P3D-OPT_TX) OPT_TX VOL 0.4 0.8 0.4 0.7 5.4.3 Power-Fault Comparator Table 72: Power-Fault Comparator Performance Specifications Condition Vin = VBIAS – 100 mV +100 mV overdrive Voltage at V1 rising Voltage at V1 falling Min -20 0.8 Typ Max +15 1.2 100 100 -10 Unit mV μA µs μs mV Parameter Offset Voltage: V1-VBIAS Hysteresis Current: V1 Response Time: V1 WDT Disable Threshold: V1-V3P3A 10 -400 8 37 5.4.4 Battery Monitor Table 73: Battery Monitor Performance Specifications (BME= 1) Condition [M40MHZ, M26MHZ] = [00], [10], or [11] FIR_LEN[1:0]=0 (L=138) FIR_LEN[1:0]=1 (L=288) FIR_LEN[1:0]=2 (L=384) FIR_LEN[1:0]=0 (L=186) FIR_LEN[1:0]=1 (L=384) FIR_LEN[1:0]=2 (L=588) Min 27 (-10%) Typ 45 -48.7 -5.35 -2.26 -19.8 -2.26 -0.63 0 Parameter Load Resistor Max 63 (+10%) LSB Value [M40MHZ, M26MHZ] = [01] Offset Error (-10%) (+10%) -200 +100 Unit kΩ μV μV μV μV μV μV mV 100 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 5.4.5 Supply Current Table 74: Supply Current Performance Specifications Condition Normal Operation, V3P3A = V3P3SYS = 3.3 V CKMPU = 614 kHz No Flash Memory write RTM_E=0, ECK_DIS=1, ADC_E=1, ICE_E=0 Normal Operation as above, except write Flash at maximum rate, CE_E = 0, ADC_ E = 0 VBAT=3.6V BROWNOUT mode 71M6531D/F 71M6532D/F LCD Mode LCD DAC off LCD DAC on SLEEP Mode Min Typ 4.2 8.4 3.3 -400 9.1 Max 6.35 9.6 3.8 +400 12 Unit mA mA mA nA mA Parameter V3P3SYS current (CE off) V3P3SYS current (CE on) V3P3A current VBAT current V3P3SYS current, Write Flash VBAT current 52 82 11 21 0.7 250 250 40 46 1.5 µA µA µA µA µA 5.4.6 V3P3D Switch Table 75: V3P3D Switch Performance Specifications Condition | IV3P3D | ≤ 1 mA | IV3P3D | ≤ 1 mA Min Typ 9 32 Max 15 50 Unit Ω Ω Parameter On resistance – V3P3SYS to V3P3D On resistance – VBAT to V3P3D 5.4.7 2.5 V Voltage Regulator Table 76: 2.5 V Voltage Regulator Performance Specifications Condition Iload = 0 Iload = 0 mA to 5 mA Iload = 5 mA, reduce V3P3 until V2P5 drops 200 mV RESET=0, iload=0 Min 2.3 Typ 2.5 Max 2.7 40 470 -2 +2 Unit V mV mV mV/V Parameter V2P5 V2P5 load regulation Voltage overhead V3P3-V2P5 PSSR ∆V2P5/∆V3P3 5.4.8 Low-Power Voltage Regulator Table 77: Low-Power Voltage Regulator Performance Specifications Unless otherwise specified, V3P3SYS = V3P3A = 0, PB=GND (BROWNOUT). Parameter V2P5 V2P5 load regulation VBAT voltage requirement PSRR ΔV2P5/ΔVBAT Condition ILOAD = 0 ILOAD = 0 mA to 1 mA ILOAD = 1 mA, reduce VBAT until REG_LP_OK = 0 ILOAD = 0 Min 2.3 Typ 2.5 Max 2.7 30 3.0 -50 50 Unit V mV V mV/V v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 101 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 5.4.9 Crystal Oscillator Table 78: Crystal Oscillator Performance Specifications Condition Crystal connected Min Typ Max 1 3 5 5 Unit μW pF pF pF Parameter Maximum Output Power to Crystal 4 XIN to XOUT Capacitance 1 Capacitance to GNDD 1 XIN XOUT RTCA_ADJ[6:0] = 0 5.4.10 LCD DAC Table 79: LCD DAC Performance Specifications Parameter Condition VLCD Voltage VLCD = V3P3 ⋅ (1 − 0.059 ⋅ LCD_DAC) − 0.019V 1 ≤ LCD_DAC[2:0] ≤ 7 Min -10 Typ Max +10 Unit % 5.4.11 LCD Drivers The information in Table 80 applies to all COM and SEG pins with LCD_DAC[2:0] = 000. Table 80: LCD Driver Performance Specifications Parameter VLC2 Voltage VLC1 Voltage†, ⅓ bias ½ bias ½ bias, minimum output level VLC0 Voltage, ⅓ bias VLC1 Impedance VLC0 Impedance 1 † Condition With respect to VLCD1 With respect to 2*VLC2/3 With respect to VLC2/2 Min -0.1 -3 -3 Typ Max +0.1 +2 +2 1.0 +1 15 15 15 15 Unit V % VLC2 % VLC2 V % kΩ kΩ With respect to VLC2/3 ∆ILOAD = 100 µA (Isink) ∆ILOAD = -100 µA (Isource) ∆ILOAD = 100 µA (Isink) ∆ILOAD = -100 µA (Isource) -4 9 9 9 9 VLCD is V3P3SYS in MISSION mode and VBAT in BROWNOUT and LCD modes. Specified as percentage of VLC2, the maximum LCD voltage. 5.4.12 Optical Interface Table 81: Optical Interface Performance Specifications Parameter OPT_TX VOH (V3P3D-OPT_TX) OPT_TX VOL Condition ISOURCE =1 mA ISINK = 20 mA Min Typ Max 0.4 0.7 Unit V V 102 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 5.4.13 Temperature Sensor Table 82 shows the performance for the temperature sensor. The LSB values do not include the 8-bit left shift at CE input. Table 82: Temperature Sensor Performance Specifications Parameter Condition Nominal relationship: N(T) = Sn*(T-Tn) + Nn, Tn = 25ºC FIR_LEN[1:0]=0 Nominal Sensi(L=138) tivity (Sn)4 [M40MHZ, M26MH] = FIR_LEN[1:0]=1 3 L (L=288) S n = −0.00109 ⋅   [00], [10], or [11] 3 FIR_LEN[1:0]=2 (L=384) FIR_LEN[1:0]=0 (L=186) [M40MHZ, M26MHZ] = FIR_LEN[1:0]=1 [01] (L=384) FIR_LEN[1:0]=2 (L=588) FIR_LEN[1:0]=0 NominalOffset (L=138) (Nn) 4 FIR_LEN[1:0]=1 3 [M40MHZ, M26MHZ] =  L  [00], [10], or [11] (L=288) N n = 0.508 ⋅   FIR_LEN[1:0]=2 3  (L=384) FIR_LEN[1:0]=0 (L=186) [M40MHZ, M26MHZ] = FIR_LEN[1:0]=1 [01] (L=384) FIR_LEN[1:0]=2 (L=588) 1 Temperature Error Tn = 25°C,  ( N (T ) − N n )  ERR = T −  T = -40ºC to +85ºC   Sn  Min Typ Max Unit -106 -964 -2286 LSB/ºC -260 -2286 -8207 49447 449446 1065353 LSB 121071 1065353 3825004 -10 10 ºC Nn is measured at Tn during meter calibration and is stored in MPU or CE for use in temperature calculations. 5.4.14 VREF Table 83 shows the performance specifications for VREF. Unless otherwise specified, VREF_DIS = 0. Table 83: VREF Performance Specifications Parameter VREF output voltage, VREF(22) VREF chop step VREF power supply sensitivity ΔVREF / ΔV3P3A VREF input impedance VREF output impedance VNOM definitiona v1.3 Condition Ta = 22ºC V3P3A = 3.0 to 3.6 V VREF_DIS = 1, VREF = 1.3 to 1.7 V CAL =1, ILOAD = 10 µA, -10 µA Min 1.193 Typ 1.195 Max 1.197 40 1.5 Unit V mV mV/V kΩ 2.5 kΩ V -1.5 100 VNOM (T ) = VREF (22) + (T − 22)TC1 ⋅ 10 −6 + (T − 22) 2 TC 2 ⋅ 10 −6 © 2005-2010 TERIDIAN Semiconductor Corporation 103 Data Sheet 71M6531D/F-71M6532D/F Parameter VNOM temperature coefficients: TC1 TC2 VREF(T) deviation from VNOM(T) VREF (T ) − VNOM (T ) 10 6 VNOM (T ) max( T − 22 ,40) VREF aging a FDS 6531/6532 005 Condition Min Typ Max Unit µV/ºC µV/°C2 PPM/ºC PPM/ year 3.18·(52.46-TRIMT) -0.444 -40 ±25 +40 This relationship describes the nominal behavior of VREF at different temperatures. 5.4.15 ADC Converter, V3P3A Referenced Table 84 shows the performance specifications for the ADC converter, V3P3A referenced. For this data, FIR_LEN[1:0]=0, VREF_DIS=0 and LSB values do not include the 8-bit left shift at the CE input. Table 84: ADC Converter Performance Specifications Parameter Recommended Input Range (Vin-V3P3A) Voltage to Current Crosstalk 10 *Vcrosstalk cos(∠Vin − ∠Vcrosstalk ) Vin 6 Condition Min -250 -10 Typ Max 250 10 Unit mV peak μV/V THD (First 10 harmonics) 1: 250 mV-pk 20 mV-pk Input Impedance Temperature coefficient of Input Impedance LSB size [M40MHZ, 3 M26MHZ] = 1.25  3  VLSB = VREF ⋅ ⋅  4.75  L  [00], [10], or [11] L = FIR length [M40MHZ, M26MHZ] = [01] Digital Full Scale [M40MHZ, 3 M26MHZ] =  L  [00], [10], or [11]  3 L = FIR length [M40MHZ, M26MHZ] = [01] Vin = 200 mV peak, 65 Hz, on VA. Vcrosstalk = largest measurement on IA or IB Vin=65 Hz, 64 kpts FFT, BlackmanHarris window CKCE = 5 MHz Vin = 65 Hz Vin = 65 Hz FIR_LEN[1:0]=0 FIR_LEN[1:0]=1 FIR_LEN[1:0]=2 FIR_LEN[1:0]=0 FIR_LEN[1:0]=1 FIR_LEN[1:0]=2 FIR_LEN[1:0]=0 FIR_LEN[1:0]=1 FIR_LEN[1:0]=2 FIR_LEN[1:0]=0 FIR_LEN[1:0]=1 FIR_LEN[1:0]=2 -75 -90 40 1.7 3231 355 150 1319 150 42 ±97336 ±884736 ±2097152 ±238328 ±2097152 ±7529536 90 dB dB kΩ Ω/°C nV/ LSB nV/ LSB LSB LSB ADC Gain Error versus %Power Supply Variation 10 6 ∆Nout PK 357nV / VIN 100 ∆V 3P3 A / 3.3 Vin=200 mV pk, 65 Hz V3P3A=3.0 V, 3.6 V -10 50 ppm/% Input Offset (Vin-V3P3A) 10 mV 104 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 5.5 5.5.1 Timing Specifications Flash Memory Table 85: Flash Memory Timing Specifications Condition V3P3A = V3P3SYS = 0 (BROWNOUT Mode) -40°C to +85°C 25°C 85°C Min 30 20,000 100 10 2 42 20 200 Typ Max 100 Unit ns Cycles Years Years Cycles µs ms ms Parameter Flash Read Pulse Width Flash write cycles Flash data retention Flash data retention Flash byte write operations between page or mass erase operations Write Time per Byte Page Erase (1024 bytes) Mass Erase 5.5.2 EEPROM Interface Table 86: EEPROM Interface Timing Condition CKMPU = 4.9 MHz, Using interrupts CKMPU = 4.9 MHz, bit-banging DIO4/5 CKMPU=4.9 MHz Min Typ 78 150 500 Max Unit kHz kHz kHz Parameter Write Clock frequency (I2C) Write Clock frequency (3-wire) 5.5.3 RESET Table 87: RESET Timing Condition Min 5 Typ Max 1 Unit µs µs Parameter Reset pulse width Reset pulse fall time 5.5.4 RTC Condition Min 2000 Typ Max 2255 Unit year Parameter Range for date v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 105 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 5.5.5 SPI Slave Port (MISSION Mode) Table 88: SPI Slave Port (MISSION Mode) Timing Condition Min 1 15 0 40 40 2 0 15 10 5 Typ Max Unit µs ns ns ns ns ns ns ns ns ns Parameter tSPIcyc PCLK cycle time tSPILead Enable lead time tSPILag Enable lag time tSPIW PCLK pulse width: High Low tSPISCK PCSZ to first PCLK fall tSPIDIS tSPIEV tSPISU tSPIH Disable time PCLK to Data Out Data input setup time Data input hold time Ignore if PCLK is low when PCSZ falls. PCSZ tSPILead PCLK tSPISCK tSPIW MSB OUT tSPIH PSDI MSB IN LSB IN tSPIEV tSPIW LSB OUT tSPIDIS tSPIcyc tSPILag PSDO Figure 44: SPI Slave Port (MISSION Mode) Timing Electrical Specification Footnotes 1. This spec will be guaranteed and verified in production samples, but will not be measured in production. 2. This spec will be guaranteed and verified in production samples, but will be measured in production only at DC. 3. This spec will be measured in production at the limits of the specified operating temperature. 4. This spec defines a nominal relationship rather than a measured parameter. Correct circuit operation will be verified with other specs that use this nominal relationship as a reference. 106 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 5.6 5.6.1 Typical Performance Data Accuracy over Current Figure 45 shows accuracy over current for various load angles at room temperature. 6531 Wh, All Phases, 50 Hz, 240 V 1 0.75 0.5 0.25 0 Degree 60 Degree % Error 0 300 Degree 180 Degree -0.25 -0.5 -0.75 -1 0.1 1 10 I (A rms) 100 1000 Figure 45: Wh Accuracy, 0.1 A to 200 A at 240 V/50 Hz and Room Temperature 5.6.2 Accuracy over Temperature With digital temperature compensation enabled, the temperature characteristics of the reference voltage (VREF) are compensated to within ±40 PPM/°C (see section 3.4 for details). v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 107 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 5.7 5.7.1 71M6531D/F Package Package Outline 68 1 2 PIN #1 DOT BY MARKING 8.000 ±0.050 8.000 ±0.050 TOP VIEW 0.850 ±0.050 0.000 ±0.050 SIDE VIEW 0.203 REF Figure 46: QFN-68 Package Outline, Top and Side View 6.300 ±0.100 Exp. pad 0.400 ±0.050 0.400 BSC 0.200 ±0.050 2 1 PIN #1 ID R0.20, or CHAMFER 0.500 x 45° 68 6.400 REF. BOTTOM VIEW 6.300 ±0.100 Exp. pad Figure 47: QFN-68 Package Outline, Bottom View * Pin length is nominally 0.4 mm (min = 0.3 mm, max = 0.4 mm). Exposed pad is internally connected to GNDD. *** Pin 1 is marked on bottom with notch or chamfered corner in the exposed pad next to pin 1. ** 108 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 5.7.2 71M6531D/F Pinout (QFN-68) 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 SEG32/DIO12 SEG10/E_TCLK SEG11/E_RST PB XOUT TEST XIN GNDD DIO1/OPT_RX V1 VREF IA IB VB VA V3P3A GNDA GNDD SEG9/E_RXTX DIO2/OPT_TX TMUXOUT SEG66/DIO46 TX SEG3/PCLK V3P3D SEG19/CKTEST V3P3SYS SEG4/PSDO SEG5/PCSZ SEG37/DIO17 COM0 COM1 COM2 COM3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 TERIDIAN 71M6531D-IM 71M6531F-IM 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 RESET V2P5 VBAT RX SEG48/DIO28 SEG31/DIO11 SEG30/DIO10 SEG29/DIO9/YPULSE SEG28/DIO8/XPULSE SEG27/DIO7/RPULSE SEG26/DIO6/WPULSE SEG25/DIO5/SDATA SEG24/DIO4/SDCK ICE_E SEG18 SEG17 SEG16 v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation SEG0 SEG1 SEG2 SEG34/DIO14 SEG35/DIO15 SEG64/DIO44 SEG49/DIO29 SEG6/PSDI SEG7/MUX_SYNC SEG8 SEG65/DIO45 SEG63/DIO43 SEG33/DIO13 SEG12 SEG13 SEG14 SEG15 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Figure 48: Pinout for QFN-68 Package 109 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 5.7.3 Recommended PCB Land Pattern for the QFN-68 Package Figure 49: PCB Land Pattern for QFN 68 Package Table 89: Recommended PCB Land Pattern Dimensions Symbol e x y d A G Notes: 1. Do not place unmasked vias in the region denoted by dimension d. 2. Soldering of bottom internal pad is not required for proper operation. 3. The y dimension has been elongated to allow for hand soldering and reworking. Production assembly may allow this dimension to be reduced as long as the G dimension is maintained. Description Lead pitch Pad width Pad length, see note 3 See note 1 Typical Dimension 0.4mm 0.23mm 0.8mm 6.3mm 6.63mm 7.2mm 110 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 5.8 5.8.1 71M6532D/F Package 71M6532D/F Pinout (LQFP-100) SEG32/DIO12 SEG10/E_TCLK SEG62/DIO42 SEG61/DIO41 SEG60/DIO40 SEG11/E_RST SEG42/DIO22/MRX PB NC XOUT TEST XIN GNDD DIO1/OPT_RX V1 VREF IAP IAN IBP IBN VB VA VX V3P3A GNDA 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 GNDD SEG9/E_RXTX DIO2/OPT_TX TMUXOUT TX SEG3/PCLK V3P3D SEG19/CKTEST V3P3SYS SEG4/PSDO SEG5/PCSZ SEG37/DIO17 SEG38/DIO18/MTX DIO56 DIO57 DIO58 DIO3 COM0 COM1 COM2 COM3 SEG67/DIO47 SEG68/DIO48 SEG69/DIO49 SEG70/DIO50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Teridian 71M6532D 71M6532F 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 GNDD RESET V2P5 VBAT RX SEG31/DIO11 SEG30/DIO10 SEG29/DIO9/YPULSE SEG28/DIO8/XPULSE SEG41/DIO21 SEG40/DIO20 SEG39/DIO19 SEG27/DIO7/RPULSE SEG26/DIO6/WPULSE SEG25/DIO5/SDATA SEG24/DIO4/SDCK SEG23 SEG22 SEG21 SEG20 ICE_E SEG43/DIO23 SEG18 SEG17 SEG16 v1.3 SEG0/TEST0 SEG1/TEST1 SEG2/TEST2 SEG34/DIO14 SEG35/DIO15 SEG64/DIO44 SEG49/DIO29 SEG36/DIO16 SEG6/PSDI SEG50/DIO30 SEG7/MUX_SYNC SEG8 SEG65/DIO45 GNDD SEG63/DIO43 SEG47/DIO27 SEG46/DIO26 SEG45/DIO25 SEG33/DIO13 SEG12 SEG44/DIO24 SEG13 SEG14 SEG15 SEG71/DIO51 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Figure 50: PCB Land Pattern for LQFP-100 Package © 2005-2010 TERIDIAN Semiconductor Corporation 111 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 5.8.2 LQFP-100 Mechanical Drawing 15.7(0.618) 16.3(0.641) 1 15.7(0.618) 16.3(0.641) Top View 14.000 +/- 0.200 MAX. 1.600 1.50 +/- 0.10 0.225 +/- 0.045 0.50 TYP. 0.10 +/- 0.10 0.60 TYP> Side View Figure 51: LQFP-100 Package, Mechanical Drawing (Dimensions are in mm.) 112 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 5.9 Pin Descriptions Pin types: P = Power, O = Output, I = Input, I/O = Input/Output The circuit number denotes the equivalent circuit, as specified under Section 5.9.4 I/O Equivalent Circuits. 5.9.1 Name GNDA GNDD Power and Ground Pins Table 90: Power and Ground Pins Type P P P P Circuit – – – – Description Analog ground: This pin should be connected directly to the ground plane. Digital ground: This pin should be connected directly to the ground plane. Analog power supply: A 3.3 V power supply should be connected to this pin, must be the same voltage as V3P3SYS. System 3.3 V supply. This pin should be connected to a 3.3 V power supply. Auxiliary voltage output of the chip, controlled by the internal 3.3 V selection switch. In mission mode, this pin is internally connected to V3P3SYS. In BROWNOUT mode, it is internally connected to VBAT. This pin is floating in LCD and sleep mode. A bypass capacitor to ground should not exceed 0.1 µF. Battery backup and oscillator power supply. A battery or super-capacitor is to be connected between VBAT and GNDD. If no battery is used, connect VBAT to V3P3SYS. Output of the internal 2.5 V regulator. A 0.1 µF capacitor to GNDA should be connected to this pin. V3P3A V3P3SYS V3P3D O 13 VBAT V2P5 P O 12 10 5.9.2 Analog Pins Table 91: Analog Pins Type Circuit Description Line Current Sense Inputs: These pins are voltage inputs to the internal A/D converter. Typically, they are connected to the outputs of current I 6 sensors. Unused pins must be tied to V3P3A. Line Voltage Sense Inputs: These pins are voltage inputs to the internal A/D converter. Typically, they are connected to the outputs of resistor VA, VB, I 6 dividers. Unused pins must be tied to V3P3A. VX 1) The VX pin is not supported by standard CE code. Comparator Input: This pin is a voltage input to the internal comparator. The voltage applied to the pin is compared to the internal BIAS voltage (1.6 V). If the input voltage is above VBIAS, the comparator output will V1 I 7 be high (1). If the comparator output is low, a voltage fault will occur. A series resistor should be connected from V1 to the resistor divider to provide hysteresis. Voltage Reference for the ADC. Normally disabled and left unconnected. VREF O 9 If enabled, a 0.1 µF capacitor to V3P3A should be connected to this pin. Crystal Inputs: A 32 kHz crystal should be connected across these pins. Typically, a 33 pF capacitor is also connected from XIN to GNDA and a 15 pF capacitor is connected from XOUT to GNDA. It is important to XIN I 8 minimize the capacitance between these pins. See the crystal manufacturer XOUT datasheet for details. If an external clock is used, a 150 mV (p-p) clock signal should be applied to XIN, and XOUT should be left unconnected. 1) Differential pin pairs IAP/IAN and IBP/IBN, as well as single-ended VX pin used on 71M6532D/F only. Name IA, IB IAP/IAN, IBP/IBN 1) v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 113 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 5.9.3 Digital Pins Table 92: Digital Pins Type Circuit O O O 5 5 5 Description LCD Common Outputs: These 4 pins provide the select signals for the LCD display. Dedicated LCD Segment Output pins. Dedicated LCD Segment Output pins (71M6532D/F only). 1, 4, 5 Multi-use pins, configurable as either emulator port pins (when ICE_E 1, 4, 5 pulled high) or LCD SEG drivers (when ICE_E tied to GND). 4, 5 ICE enable. When zero, E_RST, E_TCLK and E_RXTX become SEG32, SEG33 and SEG38 respectively. For production units, this ICE_E I 2 pin should be pulled to GND to disable the emulator port. Multi-use pins, configurable as either multiplexer/clock output or LCD CKTEST/SEG19, segment driver using the I/O RAM registers CKOUT_E or O 4, 5 MUXSYNC/SEG7 MUX_SYNC_E. Digital output test multiplexer. Controlled by TMUX[3:0]. TMUXOUT O 4 Multi-use pin, configurable as Optical Receive Input or general DIO. When configured as OPT_RX, this pin receives a signal from an external OPT_RX/DIO1 I/O 3, 4, 7 photo-detector used in an IR serial interface. If this pin is unused it must be configured as an output or terminated to V3P3D or GNDD. Multi-use pin, configurable as either optical LED transmit output, WPULSE, RPULSE, or general DIO. When configured as OPT_TX, OPT_TX/DIO2 I/O 3, 4 this pin is capable of directly driving an LED for transmitting data in an IR serial interface. Chip reset: This input pin is used to reset the chip into a known state. For normal operation, this pin is pulled low. To reset the chip, this pin RESET I 2 should be pulled high. This pin has an internal 30 μA (nominal) current source pull-down. No external reset circuitry is necessary. UART input. If this pin is unused it must be configured as an RX I 3 output or terminated to V3P3D or GNDD. UART output. TX O 4 Enables Production Test. This pin must be grounded in normal TEST I 7 operation. Push button input. This pin must be at GNDD when not active. A rising edge sets the IE_PB flag. It also causes the part to wake up if it PB I 3 is in SLEEP or LCD mode. PB does not have an internal pull-up or pull-down. 1) Not all pins available on the 71M6531D/F or 71M6532D/F. Name COM3,COM2, COM1,COM0 SEG0…SEG2, SEG7, SEG8 SEG12…SEG18 SEG20…SEG23 SEG24/DIO4… SEG35/DIO15, SEG37/DIO17, SEG48/DIO28, SEG49/DIO29, SEG63/DIO43… SEG66/DIO46 SEG3/PCLK SEG4/PSDO SEG5/PCSZ SEG6/PSDI E_RXTX/SEG9 E_RST/SEG11 E_TCLK/SEG10 I/O Multi-use pins, configurable as either LCD SEG driver or DIO. (DIO4 = SCK, DIO5 = SDA when configured as EEPROM interface; 3, 4, 5 WPULSE = DIO6, VARPULSE = DIO7 when configured as pulse outputs). Unused pins must be configured as outputs or terminated to V3P3/GNDD.1) I/O I/O I/O O 3, 4, 5 Multi-use pins, configurable as either LCD SEG driver or SPI PORT. 114 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F 5.9.4 I/O Equivalent Circuits V3P3D V3P3D 110K LCD SEG Output Pin GNDD GNDD LCD Output Equivalent Circuit Type 5: LCD SEG or pin configured as LCD SEG V3P3A V3P3D VREF Equivalent Circuit Type 9: VREF from internal reference GNDA VREF Pin V3P3A Digital Input Pin CMOS Input LCD Driver Digital Input Equivalent Circuit Type 1: Standard Digital Input or pin configured as DIO Input with Internal Pull-Up V3P3D Digital Input Pin 110K GNDD GNDD CMOS Input Analog Input Pin GNDA To MUX from internal reference V2P5 Pin GNDD V2P5 Equivalent Circuit Type 10: V2P5 Analog Input Equivalent Circuit Type 6: ADC Input V3P3A Digital Input Type 2: Pin configured as DIO Input with Internal Pull-Down V3P3D Comparator Input Pin To Comparator GNDA VLCD Pin GNDD LCD Drivers Digital Input Pin GNDD CMOS Input Comparator Input Equivalent Circuit Type 7: Comparator Input VLCD Equivalent Circuit Type 11: VLCD Power Digital Input Type 3: Standard Digital Input or pin configured as DIO Input Oscillator Pin GNDD To Oscillator VBAT Pin Power Down Circuits GNDD V3P3D V3P3D Oscillator Equivalent Circuit Type 8: Oscillator I/O 10 CMOS Output Digital Output Pin GNDD GNDD Digital Output Equivalent Circuit Type 4: Standard Digital Output or pin configured as DIO Output from VBAT V3P3D Equivalent Circuit Type 13: V3P3D from V3P3SYS V3P3D Pin 40 VBAT Equivalent Circuit Type 12: VBAT Power Figure 52: I/O Equivalent Circuits v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 115 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 6 Ordering Information Part Part Description (Package) 68-pin QFN, lead free Flash Size 128 KB 128 KB 256 KB 256 KB 128 KB 128 KB 256 KB 256 KB Packaging Bulk Tape and reel Bulk Tape and reel Bulk Tape and reel Bulk Tape and reel Order Number 71M6531D-IM/F 71M6531D-IMR/F 71M6531F-IM/F 71M6531F-IMR/F 71M6532D-IGT/F 71M6532D-IGTR/F 71M6532F-IGT/F 71M6532F-IGTR/F Package Marking 71M6531D-IM 71M6531D-IM 71M6531F-IM 71M6531F-IM 71M6532D-IGT 71M6532D-IGT 71M6532F-IGT 71M6532F-IGT 71M6531D 71M6531D 71M6531F 71M6531F 71M6532D 71M6532D 71M6532F 71M6532F 100-pin LQFP, lead free 7 Related Information The following documents applicable to the 71M6531D/F and 71M6532D/F are available from Teridian Semiconductor Corporation: • • • 71M653X Software User’s Guide (SUG_653X) Demo Board User’s Guide (DBUM_6531) Application Note on Migration from the 6521 to the 6531 (AN_6531_001) 8 Contact Information For more information about Teridian Semiconductor products or to check the availability of the 71M6531D/F or 71M6532D/F, contact us at: 6440 Oak Canyon Road Suite 100 Irvine, CA 92618-5201 Telephone: (714) 508-8800 FAX: (714) 508-8878 Email: meter.support@teridian.com For a complete list of worldwide sales offices, go to http://www.teridian.com. 116 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3 FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F Appendix A: Acronyms AFE AMR ANSI CE DIO DSP FIR I2C ICE IEC MPU PLL RMS SFR SOC SPI TOU UART Analog Front End Automatic Meter Reading American National Standards Institute Compute Engine Digital I /O Digital Signal Processor Finite Impulse Response Inter-IC Bus In-Circuit Emulator International Electrotechnical Commission Microprocessor Unit (CPU) Phase-locked loop Root Mean Square Special Function Register System on Chip Serial Peripheral Interface Time of Use Universal Asynchronous Receiver/Transmitter v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 117 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 Appendix B: Revision History Revision 1.3 Date June 9, 2010 Description 1) Throughout document: Added bit ranges to all register fields where missing (e.g. MPU_DIV[2:0]). 2) Figure 1, Figure 2: corrected name for PSDI and PSDO signals. 3) 1.4 80515 MPU Core  Added SFR register addresses where needed.  (Page 19) Table 6: Change approximate frequencies to exact frequencies.  (Page 19) Changed providing Library to providing demonstration source code.  (Page 20) Added note about MUX_DIV=0 disables ADC output.  (Page 21) See restrictions on INTBITS register.  (Page 22) Added P1-P3 to Table 10.  (Page 23) Updated Data Pointer description.  (Page 24) Table 14: Updated description for FWCOL0, FWCOL1.  (Page 26) 1.4.6 UARTs: Clarified SOBUF, S1BUF as Tx and Rx buffers.  (Page 27) Added caution on proper way to clear flag bits.  (Page 30) 1.4.9 Interrupts: Clarified External vs Internal interrupts.  (Page 31) Table 25: Added Interrupt sources for Ext. Interrupts 2-6. 4) 1.5.2 Internal Clocks  (Page 36) Table 37: Changed frequencies to exact frequencies.  (Page 38) Added caution concerning frequency relationship to specific CE code. 5) 1.5.3 Real-Time Clock (RTC): (Page 39) Added description for observing RTC timing on TMUXOUT pin, corrected values for RTCA_ADJ, and achievable frequency step. 6) 1.5.9 Digital IO – Common Characteristics for 71M6531D/F and 71M6532D/F (Page 45):  Added caution about not sourcing current in or out of DIO pins.  Updated Figure 10 : Connecting an External Load to DIO Pins. 7) 1.5.13 Battery Monitor (Page 46): Corrected RAM address for ADC data. 8) 1.5.15 SPI Slave Port (page 49): Clarified description of I/O RAM access via the SPI interface. Added Table 50. 9) 2.3 Battery Modes (page 56, 57): Added details on software precautions for switching between modes and factory programming of the first 6 flash addresses. 10) 3.1 Connection of Sensors (page 63): Added note concerning analog input pins requiring sensors with low source impedance. 11) 3.15 MPU Firmware (page 70): Modified to indicate demonstration source code provided. 12) 3.16 Crystal Oscillator (page 70): Updated caution concerning rejecting electromagnetic interference. 13) Table 54: I/O RAM Map in Functional Order (page 72): Updated Unused and NVRAM locations. 14) 4.3.4 Environment: Added comment concerning importance of parameter dependence on CE code environment. 15) 4.3.6 CE Status and Control (page 89):  Updated description of F0 in Table 57.  Updated descriptions in Table 58 (page 91). 16) 4.3.7 CE Transfer Variables: Updated description of VBAT_SUM_X in Table 63 (page 93). 17) Corrected values for EXT_PULSE in description of internal pulse v1.3 118 © 2005-2010 TERIDIAN Semiconductor Corporation FDS 6531/6532 005 Data Sheet 71M6531D/F-71M6532D/F generation (page 89). Updated pin-out for QFN-68 package (Figure 48). Added explanation for InSQRES_X. Added explanation of delay compensation in CE (1.3.5). Added explanation on temperature coefficients for VERF in Application Section (3.4.1). 22) Corrected Figure 30 (right side). Updated number range for RTC_ADJ to 0 – 0x7F and tolerance for exposed pad in Figure 46 to 0.1 mm. Corrected bit range for CE_LCTN to [7:0] and functional description for TMOD[7] and TMOD[3] in Table 22. Added maximum value for WRATE and text stating that registers RTC_SEC to RTC_YR do not change at reset. Added V LSB entry for sag detection in CE Interface Description, text regarding hysteresis at section 3.10, note that VX pin is not supported by standard CE code, and description of STOP and IDLE bits in PCON register. Changed value for Wh accuracy percentage on title page (value stated for room temperature). Updated mechanical drawing for QFN-68 package. Replaced Figure 19 with single-phase example. Corrected LQFP-100 package drawing (Figure 50). Applied minor corrections and enhancements to diagrams. Initial release. Changes with respect to PDS v1.3: 1) Corrected Timer/Counter 0/1 label in Table 22. 2) Corrected entries for DIO29 and DIO43 in Table 39. 3) Updated unused/reserved bits in I/O RAM tables, added description for WE register. 4) Documented blink capability for both SEG18 and SEG19. 5) Changed package for 71M6532D/F to LQFP-100, updated all pin tables and I/O RAM tables accordingly. 6) Replaced graph showing system performance specification over temperature with specification on accuracy of VREF compensation. 7) Added explanation for hysteresis at the V1 pin in Applications Section. 8) Added note on recommended bypass capacitors C1 and C2 in Electrical Specification. 9) Removed access to I/O RAM from SPI Port description. 10) Updated numerous parameters in Electrical Specification (temperature sensor, supply current for mission and battery modes). 11) Corrected number of pre-boot cycles in Flash Memory Section. 12) Updated entries in I/O RAM table under “Wake” column. 18) 19) 20) 21) 1.2 October 21, 2009 1.1 July 27, 2009 1.0 February 27, 2009 v1.3 © 2005-2010 TERIDIAN Semiconductor Corporation 119 Data Sheet 71M6531D/F-71M6532D/F FDS 6531/6532 005 © 2008-2010 Teridian Semiconductor Corporation. All rights Reserved. Teridian Semiconductor Corporation is a registered trademark of Teridian Semiconductor Corporation. Single Converter Technology is a registered trademark of Teridian Semiconductor Corporation. Simplifying System Integration is a trademark of Teridian Semiconductor Corporation. Intel is a registered trademark of Intel Corporation. All other trademarks are the property of their respective owners. Teridian Semiconductor Corporation makes no warranty for the use of its products, other than expressly contained in the Company’s warranty detailed in the Teridian Semiconductor Corporation standard Terms and Conditions. The company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice and does not make any commitment to update the information contained herein. Accordingly, the reader is cautioned to verify that this document is current by comparing it to the latest version on http://www.teridian.com or by checking with your sales representative. 120 © 2005-2010 TERIDIAN Semiconductor Corporation v1.3
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