1.5KE170C-E3/73

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor TRANSZORB® Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in unidirectional and bidirectional • 1500 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance Case Style 1.5KE • AEC-Q101 qualified available • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS VBR unidirectional 6.8 V to 540 V VBR bidirectional 6.8 V to 220 V VWM unidirectional 5.8 V to 459 V VWM bidirectional 5.8 V to 185 V PPPM 1500 W PD 6.5 W IFSM (unidirectional only) 200 A TJ max. 175 °C Polarity Unidirectional, bidirectional Package 1.5KE DEVICES FOR BIDIRECTION APPLICATIONS For bidirectional types, use CA suffix (e.g. 1.5KE220CA) Electrical characteristics apply in both directions. Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. MECHANICAL DATA Case: molded epoxy body over passivated junction Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3_X - RoHS compliant, and AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Note • 1.5KE250A to 1.5KE540A are commercial grade only • Bidirectional is available from 1.5KE6.8CA to 1.5KE220CA only Polarity: for unidirectional types the color band denotes cathode end, no marking on bidirectional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1) PPPM 1500 W Peak pulse current with a 10/1000 μs waveform (1) IPPM See next table A PD 6.5 W IFSM 200 A VF 3.5/5.0 V TJ, TSTG -55 to +175 °C Power dissipation on infinite heatsink at TL = 75 °C (fig. 5) Peak forward surge current 8.3 ms single half sine-wave unidirectional only Maximum instantaneous forward voltage at 100 A for unidirectional only Operating junction and storage temperature range (3) (2) Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (3) V = 3.5 V for 1.5KE220A and below; V = 5.0 V for 1.5KE250A and above F F Revision: 09-Aug-2022 Document Number: 88301 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) JEDEC® TYPE NUMBER 1N6267A 1N6268A 1N6269A 1N6270A 1N6271A 1N6272A 1N6273A 1N6274A 1N6275A 1N6276A 1N6277A 1N6278A 1N6279A 1N6280A 1N6281A 1N6282A 1N6283A 1N6284A 1N6285A 1N6286A 1N6287A 1N6288A 1N6289A 1N6290A 1N6291A 1N6292A 1N6293A 1N6294A 1N6295A 1N6296A 1N6297A 1N6298A 1N6299A 1N6300A 1N6301A 1N6302A 1N6303A - GENERAL SEMICONDUCTOR PART NUMBER (+)1.5KE6.8A (+)1.5KE7.5A (+)1.5KE8.2A (+)1.5KE9.1A (+)1.5KE10A (+)1.5KE11A (+)1.5KE12A (+)1.5KE13A (+)1.5KE15A (+)1.5KE16A (+)1.5KE18A (+)1.5KE20A (+)1.5KE22A (+)1.5KE24A (+)1.5KE27A (+)1.5KE30A (+)1.5KE33A (+)1.5KE36A (+)1.5KE39A (+)1.5KE43A (+)1.5KE47A (+)1.5KE51A (+)1.5KE56A (+)1.5KE62A (+)1.5KE68A (+)1.5KE75A (+)1.5KE82A (+)1.5KE91A (+)1.5KE100A (+)1.5KE110A (+)1.5KE120A (+)1.5KE130A (+)1.5KE150A (+)1.5KE160A (+)1.5KE170A (+)1.5KE180A (+)1.5KE200A (+)1.5KE220A 1.5KE250A 1.5KE300A 1.5KE350A 1.5KE400A 1.5KE440A 1.5KE480A 1.5KE510A 1.5KE540A BREAKDOWN MAXIMUM VOLTAGE TEST STAND-OFF REVERSE VBR AT IT (1) CURRENT VOLTAGE LEAKAGE (V) IT VWM AT VWM (mA) (V) ID (4) MIN. MAX. (μA) 6.45 7.14 10 5.80 1000 7.13 7.88 10 6.40 500 7.79 8.61 10 7.02 200 8.65 9.55 1.0 7.78 50 9.50 10.5 1.0 8.55 10 10.5 11.6 1.0 9.40 5.0 11.4 12.6 1.0 10.2 5.0 12.4 13.7 1.0 11.1 5.0 14.3 15.8 1.0 12.8 1.0 15.2 16.8 1.0 13.6 1.0 17.1 18.9 1.0 15.3 1.0 19.0 21.0 1.0 17.1 1.0 20.9 23.1 1.0 18.8 1.0 22.8 25.2 1.0 20.5 1.0 25.7 28.4 1.0 23.1 1.0 28.5 31.5 1.0 25.6 1.0 31.4 34.7 1.0 28.2 1.0 34.2 37.8 1.0 30.8 1.0 37.1 41.0 1.0 33.3 1.0 40.9 45.2 1.0 36.8 1.0 44.7 49.4 1.0 40.2 1.0 48.5 53.6 1.0 43.6 1.0 53.2 58.8 1.0 47.8 1.0 58.9 65.1 1.0 53.0 1.0 64.6 71.4 1.0 58.1 1.0 71.3 78.8 1.0 64.1 1.0 77.9 86.1 1.0 70.1 1.0 86.5 95.5 1.0 77.8 1.0 95.0 105 1.0 85.5 1.0 105 116 1.0 94.0 1.0 114 126 1.0 102 1.0 124 137 1.0 111 1.0 143 158 1.0 128 1.0 152 168 1.0 136 1.0 162 179 1.0 145 1.0 171 189 1.0 154 1.0 190 210 1.0 171 1.0 209 231 1.0 185 1.0 237 263 1.0 214 1.0 285 315 1.0 256 1.0 333 368 1.0 300 1.0 380 420 1.0 342 1.0 418 462 1.0 376 1.0 456 504 1.0 408 1.0 485 535 1.0 434 1.0 513 567 1.0 459 1.0 MAXIMUM MAXIMUM MAXIMUM PEAK CLAMPING TEMPERATURE PULSE VOLTAGE COEFFICIENT CURRENT AT IPPM OF VBR IPPM (2) VC (V) (%/°C) (A) 143 10.5 0.057 133 11.3 0.061 124 12.1 0.065 112 13.4 0.068 103 14.5 0.073 96.2 15.6 0.075 89.8 16.7 0.078 82.4 18.2 0.081 70.8 21.2 0.084 66.7 22.5 0.086 59.5 25.2 0.089 54.2 27.7 0.090 49.0 30.6 0.092 45.2 33.2 0.094 40.0 37.5 0.096 36.2 41.4 0.097 32.8 45.7 0.098 30.1 49.9 0.099 27.8 53.9 0.100 25.3 59.3 0.101 23.1 64.8 0.101 21.4 70.1 0.102 19.5 77.0 0.103 17.6 85.0 0.104 16.3 92.0 0.104 14.6 104 0.105 13.3 113 0.105 12.0 125 0.106 10.9 137 0.106 9.9 152 0.107 9.1 165 0.107 8.4 179 0.107 7.2 207 0.106 6.8 219 0.108 6.4 234 0.108 6.1 246 0.108 5.5 274 0.108 4.6 328 0.108 4.4 344 0.110 3.6 414 0.110 3.1 482 0.110 2.7 548 0.110 2.5 602 0.110 2.28 658 0.110 2.15 698 0.110 2.03 740 0.110 Notes (1) Pulse test: t  50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE CA62.35 (4) For bidirectional types with V 10 V and less the I limit is doubled R D (+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both unidirectional and bidirectional devices Revision: 09-Aug-2022 Document Number: 88301 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE Typical thermal resistance, junction to ambient RJA 75 Typical thermal resistance, junction to lead RJL 15.4 UNIT °C/ W ORDERING INFORMATION (Example) PREFERRED PIN UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.5KE6.8A-E3/54 0.968 54 1400 13" diameter paper tape and reel 1.5KE6.8AHE3_B/C (1)(2) 0.968 C 1400 13" diameter paper tape and reel Notes (1) AEC-Q101 qualified (2) Applied for 1.5KE6.8AHE3_B to 1.5KE220AHE3_B, and 1.5KE6.8CAHE3_B to 1.5KE220CAHE3_B RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 100 10 1 0.1 0.1 µs Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 1.0 µs 10 µs 100 µs 1.0 ms 10 ms 1.0 0 td - Pulse Width (s) 3.0 2.0 4.0 t - Time (ms) Fig. 1 - Peak Pulse Power Rating Curve Fig. 3 - Pulse Waveform 100 10 000 Uni-Directional Bi-Directional 75 CJ - Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs 50 25 VR = 0 1000 VR = Rated Stand-Off Voltage 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 0 0 25 50 75 100 125 150 175 200 TJ - Initial Temperature (°C) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature 10 5 10 100 500 VBR - Breakdown Voltage (V) Fig. 4 - Typical Junction Capacitance Revision: 09-Aug-2022 Document Number: 88301 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor 8.0 ΔVC - Incremental Clamping Voltage 100 PD - Power Dissipation (W) 7.0 6.0 5.0 4.0 3.0 L = 0.375" (9.5 mm) Lead Lengths 2.0 1.0 1.5KE200 1.5KE130 20 1.5KE75 10 1.5KE39 2.0 1.5KE33 1.5KE6.8 1.5KE9.1 1.0 0.2 0.1 0 0 25 50 75 100 125 150 175 0.5 200 1 10 2 50 TL - Lead Temperature (°C) IPP - Peak Pulse Current (A) Fig. 5 - Power Derating Curve Fig. 8 - Incremental Clamping Voltage Curve (Unidirectional) 100 200 VC - Incremental Clamping Voltage TJ = TJ max. 8.3 ms Single Half Sine-Wave Peak Forward Surge Current (A) Waveform: 10/1000 µs Impulse ΔVC = VC - VBR 100 10 100 1.5KE200C 20 10 1.5KE75C 1.5KE39C 1.5KE30C 1.5KE15C 11C 1.5KE7.5C 2.0 1.0 0.2 0.1 0.5 10 1 Waveform: 8/20 µs Impulse VC = VC - VBR 2 1 10 20 50 Number of Cycles at 60 Hz IPP - Peak Pulse Current (A) Fig. 6 - Maximum Non-Repetitive Forward Surge Current Unidirectional only Fig. 9 - Incremental Clamping Voltage Curve (Bidirectional) 100 Waveform: 8/20 µs Impulse ΔVC = VC - VBR 1.5KE200 1.5KE130 20 1.5KE100 10 1.5KE75 2.0 1.5KE39 1.5KE33 1.5KE6.8 1.5KE9.1 1.5KE18 1.5KE12 1.0 0.2 VC - Incremental Clamping Voltage ΔVC - Incremental Clamping Voltage 100 20 Waveform: 10/1000 µs Impulse VC = VC - VBR 1.5KE200C 1.5KE75C 10 1.5KE39C 1.5KE30C 1.5KE15C 2 1.5KE11C 1 1.5KE7.5C 0.2 0.1 0.1 0.5 1 2 10 20 50 0.5 1 2.0 10 20 50 IPP - Peak Pulse Current (A) IPP - Peak Pulse Current (A) Fig. 7 - Incremental Clamping Voltage Curve (Unidirectional) Fig. 10 - Incremental Clamping Voltage Curve (Bidirectional) Revision: 09-Aug-2022 Document Number: 88301 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 10 1 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 10 1 0.1 0 0.4 0.8 1.2 1.6 0.1 0.001 2.0 0.01 0.1 1 10 100 1000 Instantaneous Forward Voltage (V) tp - Pulse Duration (s) Fig. 11 - Instantaneous Forward Voltage Characteristics Curve Fig. 12 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style 1.5KE 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.042 (1.07) 0.038 (0.96) DIA. APPLICATION NOTES • This series of Silicon Transient Suppressors is used in applications where large voltage transients can permanently damage voltage-sensitive components. • The TVS diode can be used in applications where induced lightning on rural or remote transmission lines presents a hazard to electronic circuitry (ref: R.E.A. specification P.E. 60). • This Transient Voltage Suppressor diode has a pulse power rating of 1500 W for 1 ms. The response time of TVS diode clamping action is effectively instantaneous (1 x 10-9 s bi-directional); therefore, they can protect integrated circuits, MOS devices, hybrids, and other voltage sensitive semiconductors and components. TVS diodes can also be used in series or parallel to increase the peak power ratings. Revision: 09-Aug-2022 Document Number: 88301 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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