VS-10BQ060-M3
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Vishay Semiconductors
High Performance Schottky Rectifier, 1.0 A
FEATURES
• Low forward voltage drop
Cathode
Anode
• Guard ring for enhanced ruggedness and
long term reliability
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMB (DO-214AA)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
DESCRIPTION
VR
60 V
VF at IF
0.42 V
IRM
8 mA at 125 °C
TJ max.
150 °C
EAS
2.0 mJ
Package
SMB (DO-214AA)
Circuit configuration
Single
The VS-10BQ060-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
VALUES
UNITS
Rectangular waveform
1.0
A
60
V
IFSM
tp = 5 μs sine
700
A
VF
1.0 Apk, TJ = 125 °C
TJ
Range
IF(AV)
CHARACTERISTICS
VRRM
0.42
V
-55 to +150
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-10BQ060-M3
UNITS
60
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
SYMBOL
TEST CONDITIONS
VALUES
UNITS
IF(AV)
50 % duty cycle at TL = 116 °C, rectangular waveform
1.0
A
5 μs sine or 3 μs rect. pulse
700
Following any rated
load condition and with
rated VRRM applied
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 1 A, L = 4 mH
2.0
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.0
A
Repetitive avalanche current
10 ms sine or 6 ms rect. pulse
42
A
Revision: 12-Apr-2018
Document Number: 93357
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ060-M3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
1A
Maximum forward voltage drop
See fig. 1
VFM (1)
TJ = 25 °C
2A
1A
TJ = 125 °C
2A
TJ = 25 °C
VALUES
UNITS
0.49
0.60
V
0.42
0.56
0.1
Maximum reverse leakage current
See fig. 2
IRM
Typical junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
80
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
2.0
nH
10 000
V/μs
VALUES
UNITS
-55 to +150
°C
Maximum voltage rate of charge
dV/dt
VR = Rated VR
TJ = 125 °C
Rated VR
mA
8.0
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
RthJL (2)
Maximum thermal resistance,
junction to ambient
RthJA
TEST CONDITIONS
DC operation
°C/W
80
Approximate weight
Marking device
36
Case style SMB (DO-214AA)
0.10
g
0.003
oz.
1H
Notes
(1)
(2)
dP tot
1
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT J R thJA
Mounted 1" square PCB
Revision: 12-Apr-2018
Document Number: 93357
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ060-M3
Vishay Semiconductors
100
10
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
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TJ = 150 °C
1
TJ = 125 °C
TJ = 25 °C
0.1
0.1
150 °C
125 °C
10
1.0
100 °C
75 °C
0.10
50 °C
0.010
25 °C
0.0010
0.00010
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
1.0
10
20
30
40
50
60
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
100
10
0
10
20
30
40
50
60
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1 00
10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t1
t2
1
Notes:
1. Duty factor D = t1/ t2
Single pulse
(thermal resistance)
0.1
0.00001
0.0001
0.001
.
2. Peak TJ = Pdm x ZthJC + Tc
0.01
0.1
1
10
.
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 12-Apr-2018
Document Number: 93357
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ060-M3
Vishay Semiconductors
0.8
160
150
140
DC
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
130
120
110
Average Power Loss (W)
Allowable Case Temperature (°C)
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100
90
80
70
Square wave (D = 0.50)
80 % rated VR applied
60
see note (1)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.6
Limit RMS
0.4
0.2
DC
0
50
0.0
0.3
0.6
0.9
1.2
0
1.5
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
100
At any rated load condition and
with rated VRRM applied
following surge
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 12-Apr-2018
Document Number: 93357
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ060-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
B
Q
060
-M3
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating
3
-
B = SMB
4
-
Q = Schottky “Q” series
5
-
Voltage rating (060 = 60 V)
6
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
PREFERRED PACKAGE CODE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
5BT
3200
13" diameter plastic tape and reel
VS-10BQ060-M3/5BT
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95401
Part marking information
www.vishay.com/doc?95403
Packaging information
www.vishay.com/doc?95404
SPICE model
www.vishay.com/doc?95638
Revision: 12-Apr-2018
Document Number: 93357
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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Revision: 01-Jan-2022
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Document Number: 91000