10ETF06

10ETF.. Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES/DESCRIPTION Base cathode The 10ETF.. fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. 2 The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. 1 Cathode TO-220AC 3 Anode This product series has been designed and qualified for industrial level. APPLICATIONS PRODUCT SUMMARY VRRM 200 to 600 V VF at 10 A < 1.2 V trr 50 ns • Output rectification and choppers and converters freewheeling in inverters, • Input rectifications where severe restrictions on conducted EMI should be met MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) VALUES UNITS 200 to 600 V Sinusoidal waveform 10 IFSM A 150 trr 1 A, 100 A/µs 50 ns VF 10 A, TJ = 25 °C 1.2 V - 40 to 150 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA 10ETF02 200 300 10ETF04 400 500 10ETF06 600 700 TJ VOLTAGE RATINGS PART NUMBER 2 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current SYMBOL TEST CONDITIONS IF(AV) TC = 128 °C, 180° conduction half sine wave 10 10 ms sine pulse, rated VRRM applied 150 IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t Document Number: 93132 Revision: 04-Jun-08 VALUES 10 ms sine pulse, no voltage reapplied 160 10 ms sine pulse, rated VRRM applied 112.5 10 ms sine pulse, no voltage reapplied 160 t = 0.1 to 10 ms, no voltage reapplied 1600 For technical questions, contact: diodes-tech@vishay.com UNITS A A2 s A2√s www.vishay.com 1 10ETF.. Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS VALUES 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C 1.2 V 23.5 mΩ 0.85 V 0.1 VR = Rated VRRM TJ = 150 °C UNITS mA 3.0 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor TEST CONDITIONS IF at 10 Apk 25 A/µs 25 °C S VALUES UNITS 145 ns 2.75 A 0.32 µC IFM trr t dir dt Qrr IRM(REC) 0.6 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance junction to case RthJC Maximum thermal resistance junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation UNITS - 40 to 150 °C 1.5 62 Mounting surface, smooth and greased °C/W 0.5 2 Approximate weight Mounting torque VALUES g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) 10ETF02 Marking device Case style TO-220AC (JEDEC) 10ETF04 10ETF06 www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 93132 Revision: 04-Jun-08 10ETF.. Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A 20 10ETF.. Series RthJC (DC) = 1.5 °C/W 145 140 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 Ø Conduction angle 135 130 125 30° 60° 90° 120° 10ETF.. Series TJ = 150 °C 16 120° 180° DC 30° RMS limit 12 8 Ø 4 Conduction period 0 0 2 4 10 8 6 12 4 0 8 12 16 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 160 150 10ETF.. Series RthJC (DC) = 1.5 °C/W 140 Ø Conduction period 135 130 Peak Half Sine Wave Forward Current (A) 145 120° 125 0 4 2 100 80 10ETF.. Series DC 90° 6 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 120 60 60° 30° At any rated load condition and with rated VRRM applied following surge. 140 180° 40 120 8 10 14 12 1 16 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Average Forward Current (A) Fig. 2 - Current Rating Characteristics 180 16 120° 14 90° 60° 12 180° 30° 10 RMS limit 8 6 Ø 4 Conduction angle 2 10ETF.. Series TJ = 150 °C 2 4 6 8 10 Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 140 120 100 80 60 0 0 Maximum non-repetitive surge current versus pulse train duration. 160 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 90° 60° 180° 120 Maximum Allowable Case Temperature (°C) Vishay High Power Products 10ETF.. Series 40 0.01 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Document Number: 93132 Revision: 04-Jun-08 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 10ETF.. Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A 100 1.4 10ETF.. Series TJ = 25 °C 10ETF.. Series 1.2 Qrr - Maximum Reverse Recovery Charge (µC) Instantaneous Forward Current (A) Vishay High Power Products TJ = 150 °C TJ = 25 °C 10 IFM = 20 A 1.0 IFM = 10 A 0.8 0.6 IFM = 5 A 0.4 IFM = 2 A 0.2 IFM = 1 A 1 0.5 0 1.0 1.5 2.0 2.5 3.0 0 40 80 200 Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 0.20 2.5 0.15 Qrr - Maximum Reverse Recovery Charge (µC) 10ETF.. Series TJ = 150 °C trr - Maximum Reverse Recovery Time (µs) 160 dI/dt - Rate of Fall of Forward Current (A/µs) Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics IFM = 20 A IFM = 10 A 0.10 IFM = 5 A IFM = 2 A 0.05 10ETF.. Series TJ = 25 °C IFM = 20 A 2.0 IFM = 10 A 1.5 IFM = 5 A 1.0 IFM = 2 A 0.5 IFM = 1 A IFM = 1 A 0 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 0.4 15 10ETF.. Series TJ = 25 °C Irr - Maximum Reverse Recovery Current (A) 10ETF.. Series TJ = 150 °C trr - Maximum Reverse Recovery Time (µs) 120 0.3 IFM = 20 A 0.2 IFM = 10 A IFM = 5 A 0.1 IFM = 2 A IFM = 20 A 12 IFM = 10 A IFM = 5 A 9 IFM = 2 A 6 IFM = 1 A 3 IFM = 1 A 0 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 93132 Revision: 04-Jun-08 10ETF.. Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A Vishay High Power Products 20 Irr - Maximum Reverse Recovery Current (A) 10ETF.. Series TJ = 150 °C IFM = 20 A 16 IFM = 10 A IFM = 5 A 12 IFM = 2 A 8 IFM = 1 A 4 0 0 40 80 120 160 200 ZthJC - Transient Thermal Impedance (°C/W) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 10 Steady state value (DC operation) 1 0.1 0.01 Single pulse 0.001 0.001 Document Number: 93132 Revision: 04-Jun-08 0.01 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 10ETF.. Series 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 10ETF.. Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A Vishay High Power Products ORDERING INFORMATION TABLE Device code 10 E T F 06 - 1 2 3 4 5 6 1 - Current rating (10 = 10 A) 2 - Circuit configuration: 3 - E = Single diode Package: T = TO-220AC 4 - 5 - 6 - Type of silicon: F = Fast soft recovery rectifier Voltage code x 100 = VRRM None = Standard production 02 = 200 V 04 = 400 V 06 = 600 V PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95221 Part marking information http://www.vishay.com/doc?95224 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 93132 Revision: 04-Jun-08 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN® are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners. Document Number: 99901 Revision: 12-Mar-07 www.vishay.com 1