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16TTS08FP

16TTS08FP

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO-220-3

  • 描述:

    SCR PHASE CONT 800V 16A TO-220FP

  • 数据手册
  • 价格&库存
16TTS08FP 数据手册
16TTS..FP High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 (A) TO-220AB FULL-PAK The 16TTS..FP High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. Fully isolated package (VINS = 2500 VRMS) is UL E78996 approved 1 (K) (G) 3 PRODUCT SUMMARY VT at 10 A 1.4 V ITSM 200 A VRRM 800/1200 V This product has been designed and qualified for industrial level. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 13.5 17 A Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform VALUES UNITS 10 A IRMS 16 VDRM/VRRM 800/1200 V 200 A 1.4 V dV/dt 500 V/µs dI/dt 150 A/µs - 40 to 125 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM AT 125 °C mA 16TTS08FP 800 800 16TTS12FP 1200 1200 ITSM VT TJ 10 A, TJ = 25 °C Range VOLTAGE RATINGS PART NUMBER 10 Document Number: 93697 Revision: 19-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 16TTS..FP High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle, non-repetitive surge current ITSM TEST CONDITIONS Tc = 95 °C, 180° conduction, half sine wave 10 ms sine pulse, rated VRRM applied 170 10 ms sine pulse, no voltage reapplied 200 144 10 ms sine pulse, no voltage reapplied 200 2000 Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied Maximum on-state voltage drop VTM 10 A, TJ = 25 °C rt Threshold voltage VT(TO) Maximum reverse and direct leakage current IRM/IDM A 10 ms sine pulse, rated VRRM applied I2 t TJ = 125 °C TJ = 25 °C TJ = 125 °C Holding current IH Maximum latching current IL Anode supply = 6 V, resistive load A2s A2√s 1.4 V 24.0 mΩ 1.1 V 0.5 VR = Rated VRRM/VDRM Anode supply = 6 V, resistive load, initial IT = 1 A 16TTS08FP, 16TTS12FP UNITS 10 16 Maximum I2t for fusing On-state slope resistance VALUES TYP. MAX. 10 - 100 mA 200 Maximum rate of rise of off-state voltage dV/dt 500 V/µs Maximum rate of rise of turned-on current dI/dt 150 A/µs VALUES UNITS TRIGGERING PARAMETER SYMBOL Maximum peak gate power TEST CONDITIONS PGM 8.0 PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum average gate power Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Anode supply = 6 V, resistive load, TJ = - 10 °C 90 Anode supply = 6 V, resistive load, TJ = 25 °C 60 Anode supply = 6 V, resistive load, TJ = 125 °C 35 Anode supply = 6 V, resistive load, TJ = - 10 °C 3.0 Anode supply = 6 V, resistive load, TJ = 25 °C 2.0 Anode supply = 6 V, resistive load, TJ = 125 °C 1.0 TJ = 125 °C, VDRM = Rated value W mA V 0.2 2.0 mA SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq www.vishay.com 2 TEST CONDITIONS TJ = 25 °C TJ = 125 °C For technical questions, contact: diodes-tech@vishay.com VALUES UNITS 0.9 4 µs 110 Document Number: 93697 Revision: 19-Jun-08 16TTS..FP High Voltage Series Phase Control SCR Vishay High Power Products TO-220AB FULL-PAK, 16 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS TEST CONDITIONS DC operation Marking device Document Number: 93697 Revision: 19-Jun-08 UNITS - 40 to 125 °C 1.5 62 Mounting surface, smooth and greased °C/W 1.5 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES Case style TO-220AB FULL-PAK (94/V0) For technical questions, contact: diodes-tech@vishay.com 16TTS08FP 16TTS12FP www.vishay.com 3 16TTS..FP High Voltage Series 130 Phase Control SCR TO-220AB FULL-PAK, 16 A 16TTS..FP Series RthJC (DC) = 1.5 °C/ W 120 110 Conduction Angle 100 30° 60° 90° 90 120° 180° 80 0 2 4 6 8 10 12 Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Vishay High Power Products 25 DC 180° 120° 90° 60° 30° 20 15 10 RMSLimit Conduction Period 5 16TTS..FP Series TJ = 125°C 0 0 4 Conduction Period 100 90 60° 90° 120° 180° DC 80 0 2 4 6 8 10 12 Peak Half Sine Wa ve On-state Current (A) Maximum Allowable Case Temperature (°C) 120 30° 10 RMSLimit 8 6 Conduction Angle 4 16TTS..FP Series TJ= 125°C 2 0 0 2 4 6 8 140 120 100 16TTS..FP Series 80 1 Peak Half Sine Wave Forward Current (A) Maximum Average On-state Power Loss (W) 12 10 Initia l TJ= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 160 10 12 200 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ= 125°C No Vo ltag e Reapp lied Rated VRRM Reapp lied 180 160 140 120 100 16TTS..FP Series 80 0.01 Fig. 3 - On-State Power Loss Characteristics 0.1 1 Pulse Train Duration (s) Average On-state Current (A) www.vishay.com 4 100 Fig. 5 - Maximum Non-Repetitive Surge Current 18 14 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Number Of Equal Amplitude Half Cycle Current Pulses (N) Average On-state Current (A) 16 180 14 16 18 Fig. 2 - Current Rating Characteristics 180° 120° 90° 60° 30° 16 Fig. 4 - On-State Power Loss Characteristics 16TTS..FP Series RthJC (DC) = 1.5 °C/ W 110 12 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Rating Characteristics 130 8 Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: diodes-tech@vishay.com Document Number: 93697 Revision: 19-Jun-08 16TTS..FP High Voltage Series Phase Control SCR Vishay High Power Products TO-220AB FULL-PAK, 16 A 1000 Instantaneous On-state Current (A) 16TTS..FP Series 100 10 TJ= 25°C TJ= 125°C 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (°C/ W) Fig. 7 - On-State Voltage Drop Characteristics 10 Steady State Value (DC Operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single Pulse 0.01 0.0001 16TTS..FP Series 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal impedance ZthJC Characteristics Recta ngula r ga te p ulse a)Recommend ed loa d line for ra ted d i/ dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b )Recommend ed load line for = 6 µs (1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) VGD IGD 0.1 0.001 TJ = -10 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) (3) 0.1 (1) Frequency Limited by PG(AV) 16TTS..FP Series 0.01 (2) 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics Document Number: 93697 Revision: 19-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 16TTS..FP High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A ORDERING INFORMATION TABLE Device code 16 T T S 12 FP - 1 2 3 4 5 6 7 1 - Current rating, RMS value 2 - Circuit configuration: 3 - T = Single thyristor Package: T = TO-220AB 4 - Type of silicon: 5 - Voltage code x 100 = VRRM 6 - FULL-PAK 7 - S = Converter grade 08 = 800 V 12 = 1200 V None = Standard production PbF = Lead (Pb)-free Note: For higher voltage up to 1600 V contact factory LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95072 Part marking information http://www.vishay.com/doc?95069 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 93697 Revision: 19-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
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