16TTS08S

16TTS..S High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 16 A DESCRIPTION/FEATURES 2 Anode D2PAK 1 Cathode The 16TTS..S High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. 3 Gate PRODUCT SUMMARY VT at 10 A This product has been designed and qualified for industrial level. < 1.4 V ITSM 200 A VRRM 800/1200 V OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE NEMA FR-4 or G10 glass fabric-based epoxy with 4 oz. (140 µm) copper 2.5 3.5 Aluminum IMS, RthCA = 15 °C/W 6.3 9.5 Aluminum IMS with heatsink, RthCA = 5 °C/W 14.0 18.5 UNITS A Note • TA = 55 °C, TJ = 125 °C, footprint 300 mm2 MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform IRMS VALUES 10 16 VRRM/VDRM UNITS A 800/1200 V 200 A 1.4 V dV/dt 500 V/µs dI/dt 150 A/µs - 40 to 125 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM AT 125 °C mA 16TTS08S 800 800 16TTS12S 1200 1200 ITSM VT 10 A, TJ = 25 °C TJ VOLTAGE RATINGS PART NUMBER Document Number: 93698 Revision: 04-Jul-08 For technical questions, contact: diodes-tech@vishay.com 10 www.vishay.com 1 16TTS..S High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 16 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle, non-repetitive surge current ITSM TEST CONDITIONS TC = 98 °C, 180° conduction, half sine wave 10 ms sine pulse, rated VRRM applied 170 10 ms sine pulse, no voltage reapplied 200 144 10 ms sine pulse, no voltage reapplied 200 2000 Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied Maximum on-state voltage drop VTM 10 A, TJ = 25 °C rt Threshold voltage VT(TO) Maximum reverse and direct leakage current IRM/IDM A 10 ms sine pulse, rated VRRM applied I2 t TJ = 125 °C TJ = 25 °C TJ = 125 °C IH Anode supply = 6 V, resistive load, initial IT = 1 A Maximum latching current IL Anode supply = 6 V, resistive load A2s A2√s 1.4 V 24.0 mΩ 1.1 V 0.5 VR = Rated VRRM/VDRM Holding current UNITS 10 16 Maximum I2t for fusing On-state slope resistance VALUES TYP. MAX. 10 - 100 mA 200 Maximum rate of rise of off-state voltage dV/dt 500 V/µs Maximum rate of rise of turned-on current dI/dt 150 A/µs VALUES UNITS TRIGGERING PARAMETER SYMBOL TEST CONDITIONS PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum peak gate power Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Anode supply = 6 V, resistive load, TJ = - 10 °C 90 Anode supply = 6 V, resistive load, TJ = 25 °C 60 Anode supply = 6 V, resistive load, TJ = 125 °C 35 Anode supply = 6 V, resistive load, TJ = - 10 °C 3.0 Anode supply = 6 V, resistive load, TJ = 25 °C 2.0 Anode supply = 6 V, resistive load, TJ = 125 °C 1.0 TJ = 125 °C, VDRM = Rated value W mA V 0.25 2.0 mA SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq www.vishay.com 2 TEST CONDITIONS TJ = 25 °C TJ = 125 °C For technical questions, contact: diodes-tech@vishay.com VALUES UNITS 0.9 4 µs 110 Document Number: 93698 Revision: 04-Jul-08 16TTS..S High Voltage Series Surface Mountable Phase Control SCR, 16 A Vishay High Power Products THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Soldering temperature SYMBOL TEST CONDITIONS TJ, TStg TS VALUES - 40 to 125 For 10 s (1.6 mm from case) 240 Maximum thermal resistance, junction to case RthJC DC operation 1.3 Typical thermal resistance, junction to ambient RthJA PCB mount (1) 40 °C °C/W Approximate weight Marking device UNITS Case style D2PAK (SMD-220) 2 g 0.07 oz. 16TTS08S 16TTS12S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W. For recommended footprint and soldering techniques refer to application note #AN-994. Document Number: 93698 Revision: 04-Jul-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 16TTS..S High Voltage Series Vishay High Power Products Surface Mountable Phase Maximum Allowable Case Temperature (°C) 125 16TTS.. Series R thJC (DC) = 1.3 °C/W 120 115 Conduction Angle 110 105 100 30° 60° 95 90° 120° 180° 90 0 2 4 6 8 10 12 Max imum Average On-state Power Loss (W) Control SCR, 16 A 25 DC 180° 120° 90° 60° 30° 20 15 RMS Limit 10 Conduction Period 5 16TTS.. Series TJ = 125°C 0 0 2 Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (°C) 125 16TTS.. Series R thJC (DC) = 1.3 °C/W 115 Conduction Period 110 105 100 30° 60° 90° 120° 95 180° DC 90 0 2 4 6 8 10 12 14 180° 120° 90° 60° 30° RMS Limit 10 8 Conduction Angle 6 16TTS.. Series T J = 125°C 4 2 0 0 1 2 3 4 5 6 7 8 9 10 12 14 16 18 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 160 140 120 100 16TTS..Series 80 1 10 100 10 11 Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave Forward Current (A) Max imum Average On-state Power Loss (W) 18 12 8 Number Of Equal Amplitude Half C ycle Current Pulses (N) Fig. 2 - Current Rating Characteristics 14 180 16 Average On-state Current (A) 16 6 Fig. 4 - On-State Power Loss Characteristics Fig. 1 - Current Rating Characteristics 120 4 Average On-state Current (A) Average On-state Current (A) 200 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied 180 160 140 120 100 16TTS.. Series 80 0.01 0.1 1 Average On-state Current (A) Pulse Train Duration (s) Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 93698 Revision: 04-Jul-08 16TTS..S High Voltage Series Surface Mountable Phase Control SCR, 16 A Vishay High Power Products 1000 Instantaneous On-state Current (A) 16TTS.. Series 100 10 T J = 25°C TJ = 125°C 1 0 1 2 3 4 5 Instantaneous On-st ate Voltage (V) Transient Thermal Impedance Z thJC (°C/W) Fig. 7 - On-State Voltage Drop Characteristics 10 Steady State Value (DC Operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single Pulse 16TTS.. Series 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5µs, tp >= 6 µs b)Recommended load line for = 6 µs (1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) VGD IGD 0.1 0.001 TJ = -10 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) 16TTS.. Series 0.01 0.1 (3) (2) (1) Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics Document Number: 93698 Revision: 04-Jul-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 16TTS..S High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 16 A ORDERING INFORMATION TABLE Device code 16 T T S 12 S TRL - 1 2 3 4 5 6 7 8 1 - 2 - Current rating Circuit configuration: T = Single thyristor 3 - Package: T = TO-220AC 4 - Type of silicon: S = Standard recovery rectifier 5 - Voltage rating: Voltage code x 100 = VRRM 6 - S = TO-220 D2PAK (SMD-220) version 7 - 08 = 800 V 12 = 1200 V None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 8 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95046 Part marking information http://www.vishay.com/doc?95054 Packaging information http://www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 93698 Revision: 04-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1