19MT050XF

Bulletin I27128 Rev.C 07/03 19MT050XF "FULL-BRIDGE" FREDFET MTP HEXFET® Power MOSFET Features • Low On-Resistance • High Performance Optimised Built-in Fast Recovery Diodes • Fully Characterized Capacitance and Avalanche Voltage and Current • Aluminum Nitride DBC • Very Low Stray Inductance Design for High Speed Operation 31 A VDSS = 500V Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Low Trr and Soft Diode Reverse Recovery • Optimized for Welding, UPS and SMPS Applications • Outstanding ZVS and High Frequency Operation • Direct Mounting to Heatsink • PCB Solderable Terminals • Very Low Junction-to-Case Thermal Resistance • UL Approved E78996 MMTP Absolute Maximum Ratings Parameters ID Continuos Drain Current @ VGS = 10V IDM Pulsed Drain Current PD Maximum Power Dissipation Max Units @ TC = 25°C 31 A @ TC = 100°C 19 @ TC = 25°C 1140 @ TC = 100°C 456 (1) 124 VGS Gate-to-Source Voltage ± 30 VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 dv/dt Peak Diode Recovery dv/dt www.irf.com (3) 15 W V V/ ns 1 19MT050XF Bulletin I27128 Rev.C 07/03 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions V(BR)DSS ∆V(BR)DSS/ ∆T J R DS(ON) Drain-to-Source Breakdown Voltage Temperature Coeff. of Breakdown Voltage Static Drain-to-Source On-Resistance 500 V GS(th) Gate Threshold Voltage 3.0 I DSS Drain-to-Source Leakage Current (6) I GSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage V V GS = 0V, I D = 250µA V/°C I D = 4mA, reference to T J = 25°C 0.48 0.19 0.21 0.22 0.25 Ω 6.0 V 50 2 150 - 150 µA mA nA V GS = 10V, I D = 19A V GS = 10V, I D = 31A (4) V DS = V GS , I D = 250µA V DS = V DS = V GS = V GS = 500V, V GS = 0V 400V, V GS = 0V, T J = 125°C 30V - 30V Dynamic Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions gfs Qg Qgs Qgd Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge 26 105 36 46 160 55 70 td(on) td(off) tr tf Ciss Coss Crss Turn-on Delay Time Turn-off Delay Time Rise Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 49 80 165 76 4808 1165 40 74 120 250 115 7210 1750 60 S nC V DS = 50V, ID = 19A I D = 31A VDS = 400V VGS = 10V ns I D = 31A VDS = 250V VGS = 10V RG = 4.3Ω VGS = 0V VDS = 25V f = 1.0 MHz pF (4) Diode Characteristics @ TJ = 25°C (unless otherwise specified) Parameters IS ISM Continuous Source Current (Body Diode) Pulsed Source Current VSD trr Qrr (Body Diode) (1) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 2 Min Typ Max Units Test Conditions 31 1.01 252 1619 A 124 MOSFET symbol showing the integral reverse 1.1 378 2428 p-n junction diode TJ = 25°C, IS = 31A, VGS = 0V TJ = 125°C, IF = 31A di/dt = 100A/µs V ns nC D G S (4) (4) www.irf.com 19MT050XF Bulletin I27128 Rev.C 07/03 Avalanche Characteristics Max Units EAS Parameters Single Pulse Avalanche Energy (2) Min Typ 493 mJ IAR Avalanche Current (1) 31 A EAR Repetitive Avalanche Energy (1) 114 mJ Thermal- Mechanical Specifications Parameters Min Max Units TJ Operating Junction Temperature Range - 40 Typ 150 °C TSTG Storage Temperature Range - 40 125 R thJC Junction-to-Case (per MOSFET) R thCS Case-to-Sink 0.44 °C/ W 0.06 (Heatsink Compound Thermal Conductivity = 1 W/mK) Clearance (5) (external shortest distance in air 5.5 mm between two terminals) Creepage (5) (shortest distance along external 8 surface of the insulating material between 2 terminals) Weight Notes: (1) Repetitive rating; pulse width limited by max. junction temperature (2) Starting TJ = 25°C, L = 1.0mH, RG = 25Ω IAS = 31A www.irf.com 66 g (3) ISD ≤ 31A, di/dt ≤ 340 A/µs, VDD≤ V(BR)DSS, TJ ≤ 150°C (4) Pulse width ≤ 400µs; duty cycle ≤ 2% (5) Standard version only i.e. without optional thermistor (6) ICES includes also opposite leg overall leakage 3 19MT050XF Bulletin I27128 Rev.C 07/03 1000 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 1 5.0V 0.1 10 5.0V 1 20µs PULSE WIDTH Tj = 25°C 20µs PULSE WIDTH Tj = 150°C 0.01 0.1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 2.5 100 T J = 150°C 10 1 T J = 25°C VDS = 50V 20µs PULSE WIDTH 0 ID = 31A VGS = 10V 2.0 (Normalized) R DS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current ( A) 10 Fig 2. Typical Output Characteristics 1000 1.5 1.0 0.5 4.0 5.0 6.0 7.0 8.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 1 VDS, Drain-to-Source Voltage (V) 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 19MT050XF Bulletin I27128 Rev.C 07/03 100000 VGS , Gate-to-Source Voltage (V) Coss = Cds + Cgd 10000 C, Capacitance (pF) 16 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Ciss 1000 Coss 100 Crss ID= 31A VDS= 400V VDS= 250V VDS= 100V 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 10 1 10 100 0 1000 40 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 120 160 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 1000.0 ISD, Reverse Drain Current (A) 80 Q G Total Gate Charge (nC) 100.0 T J = 150°C 10.0 1.0 T J = 25°C OPERATION IN THIS AREA LIMITED BY R DS(on) 100 1msec 1 VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 1.4 100µsec 10 Tc = 25°C Tj = 150°C Single Pulse 1 10 10msec 100 1000 10000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 19MT050XF Bulletin I27128 Rev.C 07/03 32 RD VDS 28 VGS ID, Drain Current (A) 24 D.U.T. RG + - VDD 20 10V 16 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 12 Fig 10a. Switching Time Test Circuit 8 VDS 4 90% 0 25 50 75 100 125 150 TC, Case Temperature 10% VGS tr td(on) Fig 9. Maximum Drain Current Vs. Case Temperature t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (ZZthJC (°C/W) ) Thermal Response thJC 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 τJ R1 R1 τJ τ1 R2 R2 τ2 τ1 τ3 τC τ τ3 Ri (°C/W) 0.1272 0.2697 0.0429 Ci= τi/Ri Ci= i/Ri 0.001 τ2 R3 R3 τi (sec) 0.00109 0.03739 3.749 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com 19MT050XF Bulletin I27128 Rev.C 07/03 EAS, Single Pulse Avalanche Energy (mJ) 1000 ID 14A 19A BOTTOM 31A TOP 800 15V 600 400 DRIVER L VDS D.U.T RG + V - DD IAS 20V tp 200 A 0.01Ω Fig 12b. Unclamped Inductive Test Circuit and vs Junction Temperature 0 25 50 75 100 125 150 V(BR)DSS Starting T J , Junction Temperature (°C) tp Fig 12a. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12c. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG .2µF 12V .3µF D.U.T. + V - DS VGS QGS QGD VG 3mA IG ID Current Sampling Resistors Fig 13a. Gate Charge Test Circuit www.irf.com VGS Charge Fig 13b. Basic Gate Charge Waveform 7 19MT050XF Bulletin I27128 Rev.C 07/03 Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D.U.T ƒ + ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive D= Period P.W. + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs 8 www.irf.com 19MT050XF Bulletin I27128 Rev.C 07/03 Outline Table Dimensions in millimeters www.irf.com 9 19MT050XF Bulletin I27128 Rev.C 07/03 Ordering Information Table Device Code 19 1 MT 050 2 3 X F 4 5 1 - Current rating 2 - Essential Part Number (19 = 19A) 3 - Voltage code (050 = 500V) 4 - Speed/ Type (X = HexFet) 5 - Circuit Configuration (F = Full Bridge) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 09/02 10 www.irf.com