1N4004GPE-E3/54

1N4001GP, 1N4002GP, 1N4003GP, 1N4004GP, 1N4005GP, 1N4006GP, 1N4007GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier application SUPERECTIFIER® structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-204AL (DO-41) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer applications. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM (8.3 ms sine-wave) 30 A IFSM (square wave tp = 1 ms) 45 A IR 5.0 μA MECHANICAL DATA Case: DO-204AL (DO-41), molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade VF 1.1 V TJ max. 175 °C Package DO-204AL (DO-41) Diode variations Single die Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage VRRM (1) 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT 50 100 200 400 600 800 1000 V 35 70 140 280 420 50 100 200 400 600 560 700 V 800 1000 V Maximum RMS voltage VRMS Maximum DC blocking voltage VDC (1) Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 75 °C IF(AV) (1) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM (1) 30 A (1) 35 Non-repetitive peak forward surge current  square waveform TA = 25 °C (fig. 3) tp = 1 ms tp = 2 ms 45 IFSM tp = 5 ms Maximum full load reverse current, full cycle average 0.375" (9.5 mm) lead length TA = 75 °C Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range A 30 IR(AV) (1) 30 μA I2t (2) 3.7 A2s TJ, TSTG (1) -65 to +175 °C Notes (1) JEDEC® registered values (2) For device using on bridge rectifier application Revision: 07-Nov-16 Document Number: 88504 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4001GP, 1N4002GP, 1N4003GP, 1N4004GP, 1N4005GP, 1N4006GP, 1N4007GP www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.0 A Maximum DC reverse current at rated DC blocking voltage SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT VF 1.1 TA = 25 °C V 5.0 IR (1) μA TA = 125 °C 50 Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.0 μs Typical junction capacitance 4.0 V, 1 MHz CJ 8.0 pF Note (3) JEDEC® registered values THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT Typical thermal resistance RJA (1) 55 (1) 25 RJL °C/ W Note (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, PCB mounted ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 1N4004GP-E3/54 0.335 54 5500 13" diameter paper tape and reel 1N4004GP-E3/73 0.335 73 3000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 30 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.0 0.8 0.6 0.4 60 Hz Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 0.2 0 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 25 20 15 10 5 0 25 50 75 100 125 150 175 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current Revision: 07-Nov-16 Document Number: 88504 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4001GP, 1N4002GP, 1N4003GP, 1N4004GP, 1N4005GP, 1N4006GP, 1N4007GP www.vishay.com Vishay General Semiconductor 100 45 tp = 1 ms Junction Capacitance (pF) Peak Forward Surge Current (A) 50 40 35 tp = 2 ms 30 tp = 5 ms 25 tp 20 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 15 Square Waveform 10 25 50 75 100 1 0.1 125 10 100 Reverse Voltage (V) Fig. 3 - Non-Repetitive Peak Forward Surge Current Fig. 6 - Typical Junction Capacitance 100 Transient Thermal Impedance (°C/W) 100 Instantaneous Forward Current (A) 1 Ambient Temperature (°C) 10 1 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 0.1 0.01 0.6 0.8 1.0 1.2 1.4 1.6 10 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 4 - Typical Instantaneous Forward Characteristics Fig. 7 - Typical Transient Thermal Impedance Instantaneous Reverse Current (μA) 10 TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Reverse Characteristics Revision: 07-Nov-16 Document Number: 88504 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4001GP, 1N4002GP, 1N4003GP, 1N4004GP, 1N4005GP, 1N4006GP, 1N4007GP www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Note 0.026 (0.66) • Lead diameter is for suffix “E” part numbers 0.023 (0.58) Revision: 07-Nov-16 Document Number: 88504 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000