1N4148W-G
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode
• AEC-Q101 qualified available
• Base P/N-G3 - green, commercial grade
• Base P/N-HG3 - green, AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
MECHANICAL DATA
Case: SOD-123
Weight: approx. 9.4 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
TYPE MARKING
CIRCUIT CONFIGURATION
REMARKS
1N4148W-G
1N4148W-G3-08 or 1N4148W-G3-18
AH
Single
Tape and reel
1N4148W-G
1N4148W-HG3-08 or 1N4148W-HG3-18
AH
Single
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
75
V
VRRM
100
V
f ≥ 50 Hz
IF(AV)
150
mA
t < 1 s and Tj = 25 °C
IFSM
500
mA
Ptot
350
mW
SYMBOL
VALUE
UNIT
RthJA
357
K/W
Tj
150
°C
Storage temperature range
Tstg
-65 to +150
°C
Operating temperature range
Top
-55 to +150
°C
Reverse voltage
Repetitive peak reverse voltage
Average rectified current half wave rectification with
resistive load (1)
Surge forward current
Power dissipation (1)
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Thermal resistance junction to ambient air (1)
Junction temperature
Note
(1) Valid provided that electrodes are kept at ambient temperature.
Rev. 1.4, 27-Nov-2020
Document Number: 81139
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4148W-G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MAX.
UNIT
IF = 10 mA
VF
1
V
IF = 100 mA
VF
1.2
V
VR = 20 V
IR
25
nA
VR = 75 V
IR
5
μA
VR = 100 V
IR
100
μA
VR = 20 V, TJ = 150 °C
IR
50
μA
VF = VR = 0 V
CD
4
pF
Tested with 50 mA pulses,
tp = 0.1 μs, rise time < 30 ns,
fp = (5 to 100) kHz
Vfr
2.5
V
IF = 10 mA, IR = 1 mA,
VR = 6 V, RL = 100 Ω
trr
4
ns
Forward voltage
Leakage current
Diode capacitance
Voltage rise when switching ON
Reverse recovery time
MIN.
TYP.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
103
500
450
Tj = 100 °C
Tj = 25 °C
10
IF (mA)
400
Ptot - Power Dissipation (mW)
102
1
10-1
350
300
250
200
150
100
50
10-2
0
1
0
20809
VF (V)
17437
0
2
50
100
Tamb - Ambient Temperature (°C)
Fig. 3 - Admissible Power Dissipation vs.
Ambient Temperature
Fig. 1 - Forward Characteristics
104
Tj = 25 °C
5
Tj = 25 °C
1.1
f = 1 MHz
f = 1 kHz
2
150
103
1.0
CD (VR)
2
102
5
CD (0 V)
Rf (Ω)
5
0.9
0.8
2
10
5
0.7
2
10-2
17438
10-1
1
10
IF (mA)
Fig. 2 - Dynamic Forward Resistance vs.
Forward Current
0
102
17440
2
4
6
8
10
VR (V)
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Rev. 1.4, 27-Nov-2020
Document Number: 81139
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4148W-G
www.vishay.com
Vishay Semiconductors
104
5
2
103
IR (nA)
5
2
102
5
2
10
5
VR = 20 V
2
1
100
0
17441
200
Tj (°C)
Fig. 5 - Leakage Current vs. Junction Temperature
100
5
4
3
2
I
IFRM (A)
1
T = 1/fP
IFRM
10
5
4
3
2
n = tP/T
tP
n=0
t
T
0.1
0.2
0.5
5
4
3
2
0.1
10-5
17442
2
5
10-4
2
5
10-3
2
5
10-2
2
5
10-1
2
5
1
2
5
10
tP (s)
Fig. 6 - Admissible Repetitive Peak Forward Current vs.
Pulse Duration
Rev. 1.4, 27-Nov-2020
Document Number: 81139
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4148W-G
www.vishay.com
Vishay Semiconductors
0.10 (0.004)
0.15 (0.006)
8°
0.45 (0.018)
0.25 (0.010)
0° to
0.2 (0.008)
1 (0.039)
1.35 (0.053)
0.1 (0.004) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
2.5 (0.098)
0.85 (0.033)
3.55 (0.140)
1.7 (0.067)
3.85 (0.152)
1.40 (0.055)
0.45 (0.018)
0.65 (0.026)
0.85 (0.033)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.4, 27-Nov-2020
Document Number: 81139
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000
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1N4148W-G3-18 1N4148W-G3-08 1N4148W-HG3-18 1N4148W-HG3-08
