1N4148W
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
• Fast switching diodes
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
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Models
Available
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
1N4148W
ORDERING CODE
TYPE MARKING
CIRCUIT CONFIGURATION
REMARKS
A2
Single
Tape and reel
1N4148W-E3-08 or 1N4148W-E3-18
1N4148W-HE3-08 or 1N4148W-HE3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
75
V
VRRM
100
V
f 50 Hz
IF(AV)
150
mA
tp < 1 s
IFSM
500
mA
tp = 1 μs
IFSM
2
A
Ptot
350
mW
SYMBOL
VALUE
UNIT
RthJA
357
K/W
Tj
150
°C
Storage temperature range
Tstg
-65 to +150
°C
Operating temperature range
Top
-55 to +150
°C
Reverse voltage
Repetitive peak reverse voltage
Average rectified current half wave rectification with
resistive load (1)
Surge forward current
Power dissipation
(1)
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Thermal resistance junction to ambient air (1)
Junction temperature
Note
(1) Valid provided that electrodes are kept at ambient temperature.
Rev. 1.8, 23-Feb-18
Document Number: 85748
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4148W
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MAX.
UNIT
IF = 10 mA
VF
1
V
IF = 100 mA
VF
1.2
V
VR = 20 V
IR
25
nA
VR = 75 V
IR
5
μA
VR = 100 V
IR
100
μA
VR = 20 V, TJ = 150 °C
IR
50
μA
VF = VR = 0 V
CD
4
pF
Tested with 50 mA pulses,
tp = 0.1 μs, rise time < 30 ns,
fp = (5 to 100) kHz
Vfr
2.5
V
IF = 10 mA, iR = 1 mA, VR = 6 V,
RL = 100
trr
4
ns
Forward voltage
Leakage current
Diode capacitance
Voltage rise when switching ON
Reverse recovery time
MIN.
TYP.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
103
500
450
Tj = 100 °C
Ptot - Power Dissipation (mW)
102
Tj = 25 °C
IF (mA)
10
1
10-1
400
350
300
250
200
150
100
10-2
50
0
1
0
20809
VF (V)
17437
0
2
Fig. 1 - Forward Characteristics
50
100
Tamb - Ambient Temperature (°C)
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
104
Tj = 25 °C
5
10
Tj = 25 °C
1.1
f = 1 MHz
f = 1 kHz
2
150
3
1.0
CD (VR)
2
102
5
CD (0 V)
Rf (Ω)
5
0.9
0.8
2
10
5
0.7
2
10-2
17438
10-1
1
10
0
102
IF (mA)
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
17440
2
4
6
8
10
VR (V)
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Rev. 1.8, 23-Feb-18
Document Number: 85748
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4148W
www.vishay.com
Vishay Semiconductors
104
5
2
103
IR (nA)
5
2
102
5
2
10
5
VR = 20 V
2
1
0
100
17441
200
Tj (°C)
Fig. 5 - Leakage Current vs. Junction Temperature
100
5
4
3
2
I
IFRM (A)
1
T = 1/fP
IFRM
10
5
4
3
2
n = tP/T
tP
n=0
t
T
0.1
0.2
0.5
5
4
3
2
0.1
10-5
17442
2
5
10-4
2
5
10-3
2
5
10-2
2
5
10-1
2
5
1
2
5
10
tP (s)
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
Rev. 1.8, 23-Feb-18
Document Number: 85748
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4148W
www.vishay.com
Vishay Semiconductors
0.10 (0.004)
0.15 (0.006)
8°
0.45 (0.018)
0.25 (0.010)
0° to
0.2 (0.008)
1 (0.039)
1.35 (0.053)
0.1 (0.004) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
2.5 (0.098)
0.85 (0.033)
3.55 (0.140)
1.7 (0.067)
3.85 (0.152)
1.40 (0.055)
0.45 (0.018)
0.65 (0.026)
0.85 (0.033)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.8, 23-Feb-18
Document Number: 85748
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000