1N4148WS-G
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
• Fast switching diodes
• AEC-Q101 qualified available
• Base P/N-HG3 - green, AEC-Q101 qualfied
• Base P/N-G3 - green, commercial grade
• Material categorization: for definitions of
compliance please see
www.vishay.com/doc?99912
MARKING (example only)
XY
MECHANICAL DATA
Case: SOD-323
22610
Weight: approx. 4 mg
Bar = cathode marking
XY = type code
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
LINKS TO ADDITIONAL RESOURCES
08/3K per 7" reel (8 mm tape), 15K/box
3D 3D
3D Models
PARTS TABLE
PART
ORDERING CODE
1N4148WS-G
1N4148WS-HG
CIRCUIT CONFIGURATION
TYPE MARKING
REMARKS
Single
AH
Tape and reel
1N4148WS-G3-08 or 1N4148WS-G3-18
1N4148WS-HG3-08 or 1N4148WS-HG3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Surge forward current
VALUE
UNIT
VR
75
VRRM
100
f ≥ 50 Hz
IF(AV)
150
t < 1 s and Tj = 25 °C
IFSM
350
Ptot
200
mW
SYMBOL
VALUE
UNIT
RthJA
650
K/W
Repetitive peak reverse voltage
Average rectified current half wave rectification
with resistive load (1)
SYMBOL
Power dissipation (1)
V
mA
Note
(1) Valid provided that electrodes are kept at ambient temperature.
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Thermal resistance junction to ambient air (1)
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
-65 to +150
°C
Operating temperature range
Top
-55 to +150
°C
Note
(1) Valid provided that electrodes are kept at ambient temperature
Rev. 1.4, 31-Jan-18
Document Number: 85413
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4148WS-G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MAX.
UNIT
IF = 10 mA
VF
1
V
IF = 100 mA
VF
1.2
V
VR = 20 V
IR
25
nA
Forward voltage
VR = 75 V
IR
5
IR
100
VR = 20 V, Tj = 150 °C
IR
50
Diode capacitance
Reverse recovery time
TYP.
VR = 100 V
Leakage current
Voltage rise when switching ON
MIN.
μA
VF = VR = 0 V
CD
4
pF
Tested with 50 mA pulses,
tp = 0.1 μs, rise time < 30 ns,
fp = (5 to 100) kHz
Vfr
2.5
V
IF = 10 mA, iR = 1 mA, VR = 6 V,
RL = 100 Ω
trr
4
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
250
Ptot - Power Dissipation (mW)
103
102
Tj = 100 °C
Tj = 25 °C
IF (mA)
10
1
10-1
200
150
100
50
10-2
0
1
0
Fig. 1 - Forward Characteristics
50
100
150
200
Tamb - Ambient Temperature (°C)
20324
VF (V)
17437
0
2
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
104
Tj = 25 °C
5
2
10
f = 1 MHz
3
1.0
CD (VR)
2
102
5
CD (0 V)
5
Rf (Ω)
Tj = 25 °C
1.1
f = 1 kHz
2
0.9
0.8
10
5
0.7
2
10-2
17438
10-1
1
10
102
IF (mA)
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
0
17440
2
4
6
8
10
VR (V)
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Rev. 1.4, 31-Jan-18
Document Number: 85413
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4148WS-G
www.vishay.com
Vishay Semiconductors
104
5
2
103
IR (nA)
5
2
102
5
2
10
5
VR = 20 V
2
1
100
0
17441
200
Tj (°C)
Fig. 5 - Leakage Current vs. Junction Temperature
100
5
4
3
2
I
IFRM (A)
1
T = 1/fP
IFRM
10
5
4
3
2
n = tP/T
tP
n=0
t
T
0.1
0.2
0.5
5
4
3
2
0.1
10-5
17442
2
5
10-4
2
5
10-3
2
5
10-2
2
5
10-1
2
5
1
2
5
10
tP (s)
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
Rev. 1.4, 31-Jan-18
Document Number: 85413
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4148WS-G
www.vishay.com
Vishay Semiconductors
0.1 [0.004] max.
0.15 [0.006]
0.10 [0.004]
0.2 [0.008]
0.8 [0.031]
1.15 [0.045]
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0° - 8°
0.40 [0.016]
0.25 [0.010]
1.95 [0.077]
2.50 [0.098]
1.1 [0.043]
0.20 [0.008]
0.40 [0.016]
2.85 [0.112]
1.5 [0.059]
1.60 [0.063]
Cathode bar
Footprint recommendation:
1.6 [0.063]
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 6 - Date: 23.Sept.2016
17443
0.8 [0.031]
0.6 [0.024]
0.8 [0.031]
Rev. 1.4, 31-Jan-18
Document Number: 85413
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Jan-2024
