1N4150W
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Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
• For general purpose and switching
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
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Models
Available
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
1N4150W
ORDERING CODE
TYPE MARKING
CIRCUIT CONFIGURATION
REMARKS
A4
Single
Tape and reel
1N4150W-E3-08 or 1N4150W-E3-18
1N4150W-HE3-08 or 1N4150W-HE3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Repetitive peak reverse voltage
TEST CONDITION
VRRM
50
UNIT
V
Maximum average forward rectified current
IF(AV)
200
mA
Maximum power dissipation (1)
Ptot
410
mW
SYMBOL
VALUE
UNIT
RthJA
375
K/W
Tj
150
°C
Storage temperature range
Tstg
-65 to +150
°C
Operating temperature range
Top
-55 to +150
°C
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
TEST CONDITION
(1)
Maximum junction temperature
Note
(1) Valid provided that electrodes are kept at ambient temperature
Rev. 1.5, 23-Feb-18
Document Number: 85720
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4150W
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
MAX.
UNIT
IF = 1 mA
VF
0.540
0.620
V
IF = 10 mA
VF
0.660
0.740
V
IF = 50 mA
VF
0.760
0.860
V
IF = 100 mA
VF
0.820
0.920
V
IF = 200 mA
VF
0.870
1
V
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
TYP.
VR = 50 V
IR
100
nA
VR = 50 V, Tj = 150 °C
IR
100
μA
VR = 0, f = 1 MHz, VHF = 50 mV
CD
2.5
pF
IF = IR = (10 to 100) mA
iR = 0.1 x IR, RL = 100
trr
4
ns
0.10 (0.004)
0.15 (0.006)
8°
0.45 (0.018)
0.25 (0.010)
0° to
0.2 (0.008)
1 (0.039)
1.35 (0.053)
0.1 (0.004) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
2.5 (0.098)
0.85 (0.033)
3.55 (0.140)
1.7 (0.067)
3.85 (0.152)
1.40 (0.055)
0.45 (0.018)
0.65 (0.026)
0.85 (0.033)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.5, 23-Feb-18
Document Number: 85720
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
1
Document Number: 91000