1N4151WS
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
1N4151WS
ORDERING CODE
CIRCUIT CONFIGURATION
TYPE MARKING
REMARKS
Single
A5
Tape and reel
1N4151WS-E3-08 or 1N4151WS-E3-18
1N4151WS-HE3-08 or 1N4151WS-HE3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
50
V
VRRM
75
V
f ≥ 50 Hz
IF(AV)
150
mA
t < 1 s and Tj = 25 °C
IFSM
500
mA
Ptot
200
mW
SYMBOL
VALUE
UNIT
RthJA
650
K/W
Tj
150
°C
Storage temperature range
Tstg
-65 to +150
°C
Operating temperature range
Top
-55 to +150
°C
Reverse voltage
Repetitive peak reverse voltage
Average rectified current half wave
rectification with resistive load (1)
Surge current
Power dissipation (1)
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Thermal resistance junction to ambient air (1)
Junction temperature
Note
(1) Valid provided that electrodes are kept at ambient temperature
Rev. 1.8, 06-Jul-17
Document Number: 85847
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4151WS
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Leakage current
Reverse breakdown voltage
Capacitance
TEST CONDITION
SYMBOL
IF = 50 mA
VF
1
V
VR = 50 V
IR
50
nA
50
μA
2
pF
VR = 20 V, Tj = 150 °C
IR
IR = 5 µA (pulsed)
V(BR)
MIN.
TYP.
MAX.
75
V
VF = VR = 0 V
Reverse recovery time
UNIT
IF = 10 mA, IR = 10 mA
iR = 1 mA
trr
4
ns
IF = 10 mA, iR = 1 mA,
VR = 6 V, RL = 100 Ω
trr
2
ns
T j = 100 ° C
100
10
25 ° C
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V F - Forward Voltage (V)
18742
Fig. 1 - Forward Current vs. Forward Voltage
rf - Dynamic Forward Resistance (Ω)
10000
T j = 25 ° C
f = 1 kHz
1000
100
18662
10
1
0.01
0.1
1
10
IF - Forward Current (mA)
1000
800
600
400
200
0
0 20 40 60 80 100 120 140 160180 200
Tamb - Ambient Temperature (°C)
18743
100
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
CD (VR)/CD (0 V) - Relative Capacitance (pF)
I F - Forward Current (mA)
1000
Ptot - Admissible Power Dissipation (mW)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
T j = 25 ° C
f = 1 MHz
1.1
1.0
0.9
0.8
0.7
0
18664
2
4
6
8
10
VR - Reverse Voltage (V)
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Rev. 1.8, 06-Jul-17
Document Number: 85847
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4151WS
www.vishay.com
Vishay Semiconductors
I R - Leakage Current (nA)
10000
1000
100
10
VR = 50 V
1
0 20
18744
40 60 80 100 120 140 160 180 200
Tj - Junction Temperature (°C)
Fig. 5 - Leakage Current vs. Junction Temperature
100
Peak Forward Current (A)
I FRM - Admissible Repetitive
I
18709
10
ν = t p /T
ν =0
tp
0. 1
T = 1/f p
I FRM
t
T
0. 2
1
10 -5
0. 5
10 -4
10 -3
10 -2
10 -1
1
10
tp - Pulse Length (s)
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
Rev. 1.8, 06-Jul-17
Document Number: 85847
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4151WS
www.vishay.com
Vishay Semiconductors
0.1 [0.004] max.
0.15 [0.006]
0.10 [0.004]
0.2 [0.008]
0.8 [0.031]
1.15 [0.045]
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0° - 8°
0.40 [0.016]
0.25 [0.010]
1.95 [0.077]
2.50 [0.098]
1.1 [0.043]
0.20 [0.008]
0.40 [0.016]
2.85 [0.112]
1.5 [0.059]
1.60 [0.063]
Cathode bar
Footprint recommendation:
1.6 [0.063]
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 6 - Date: 23.Sept.2016
17443
0.8 [0.031]
0.6 [0.024]
0.8 [0.031]
Rev. 1.8, 06-Jul-17
Document Number: 85847
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000