1N4154
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diodes
FEATURES
• Silicon epitaxial planar diode
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Extreme fast switches
ADDITIONAL RESOURCES
3D 3D
3D Models
MECHANICAL DATA
Case: DO-35 (DO-204AH)
Weight: approx. 125 mg
Cathode band color: black
Packaging codes / options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE
PART
1N4154
ORDERING CODE
TYPE MARKING
CIRCUIT CONFIGURATION
REMARKS
1N4154TR or 1N4154TAP
1N4154
Single
Tape and reel / ammopack
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VRRM
35
V
VR
25
V
IFSM
2
A
IFRM
500
mA
IF
300
mA
VR = 0
IF(AV)
150
mA
l = 4 mm, TL = 45 °C
Ptot
440
mW
l = 4 mm, TL ≤ 25 °C
Ptot
500
mW
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
tp = 1 μs
Repetitive peak forward current
Forward continuous current
Average forward current
Power dissipation
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
SYMBOL
VALUE
UNIT
l = 4 mm, TL = constant
RthJA
350
K/W
Tj
175
°C
Tstg
-65 to +175
°C
Rev. 2.1, 24-Feb-2020
Document Number: 85524
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4154
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
TYP.
MAX.
IF = 30 mA
VF
0.88
1
V
VR = 25 V
IR
9
100
nA
VR = 25 V, Tj = 150 °C
IR
100
μA
Breakdown voltage
IR = 5 μA, tp/T = 0.01,
tp = 0.3 ms
V(BR)
Diode capacitance
VR = 0 V, f = 1 MHz,
VHF = 50 mV
CD
Forward voltage
Reverse current
IF = IR = 10 mA,
iR = 1 mA
Reverse recovery time
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
MIN.
UNIT
35
V
4
pF
4
ns
trr
2
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
3.0
100
C D - Diode Capacitance (pF)
I R - Reverse Current (µA)
Scattering Limit
10
1
0.1
VR = 25 V
0.01
0
40
80
120
160
f = 1 MHz
Tj = 25 °C
2.0
1.5
1.0
0.5
0
200
Tj - Junction Temperature (°C)
94 9154
2.5
0.1
94 9156
Fig. 1 - Reverse Current vs. Junction Temperature
1
10
100
V R - Reverse Voltage (V)
Fig. 3 - Diode Capacitance vs. Reverse Voltage
I F - Forward Current (mA)
1000
Tj = 100 °C
100
10
Tj = 25 °C
1
0.1
0
94 9152
0.4
0.8
1.2
1.6
2.0
V F - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 2.1, 24-Feb-2020
Document Number: 85524
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4154
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH)
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
1.3 [0.050]
26 min. [1.024]
1.7 [0.067]
Ø 0.4 min. [0.015]
Ø 0.6 max. [0.024]
Cathode Identification
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
Rev. 2.1, 24-Feb-2020
Document Number: 85524
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2022
1
Document Number: 91000
