1N4448TR

1N4448 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES • Silicon epitaxial planar diodes • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Extreme fast switches ADDITIONAL RESOURCES 3D 3D 3D Models MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes / options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART 1N4448 ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS 1N4448TAP or 1N4448TR V4448 Single Tape and reel / ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp = 1 μs Repetitive peak forward current Forward continuous current Average forward current Power dissipation SYMBOL VALUE UNIT VRRM 100 V VR 75 V IFSM 2 A IFRM 500 mA mA IF 300 VR = 0 IF(AV) 150 mA l = 4 mm, TL = 45 °C Ptot 440 mW l = 4 mm, TL ≤ 25 °C Ptot 500 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air Junction temperature Storage temperature range TEST CONDITION SYMBOL VALUE UNIT l = 4 mm, TL = constant RthJA 350 K/W Tj 175 °C Tstg -65 to +150 °C Rev. 1.4, 24-Feb-2020 Document Number: 81858 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4448 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. IF = 5 mA VF 0.620 TYP. IF = 100 mA VR = 20 V MAX. UNIT 0.720 V VF 1 V IR 25 nA VR = 20 V, Tj = 150 °C IR 50 μA VR = 75 V IR 5 μA Breakdown voltage IR = 100 μA, tp/T = 0.01, tp = 0.3 ms V(BR) Diode capacitance VR = 0, f = 1 MHz, VHF = 50 mV CD VHF = 2 V, f = 100 MHz ηr IF = IR = 10 mA, iR = 1 mA IF = 10 mA, VR = 6 V, iR = 0.1 x IR, RL = 100 Ω Forward voltage Reverse current Rectification efficiency Reverse recovery time 100 V 4 pF trr 8 ns trr 4 ns 45 % TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 VF - Forward Voltage (V) 1.0 I F = 100 mA 0.8 10 mA 0.6 1 mA 0.4 0.1 mA 0.2 0 - 30 Tj = 25 °C 100 Scattering Limit 10 1 0 30 60 90 1 120 94 9098 Tj - Junction Temperature (°C) 94 9169 IR- Reverse Current (nA) 1.2 Fig. 1 - Forward Voltage vs. Junction Temperature 10 100 VR- Reverse Voltage (V) Fig. 3 - Reverse Current vs. Reverse Voltage 1000 I F - Forward Current (mA) 1N4448 100 Scattering Limit 10 1 Tj = 25 °C 0.1 0 94 9171 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.4, 24-Feb-2020 Document Number: 81858 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4448 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) 3.9 max. [0.154] 3.1 min. [0.120] 26 min. [1.024] 1.3 [0.050] 26 min. [1.024] 1.7 [0.067] Ø 0.4 min. [0.015] Ø 0.6 max. [0.024] Cathode Identification Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.4, 24-Feb-2020 Document Number: 81858 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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