1N4448W-G3-18

1N4448W-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade • Material categorization: for definitions of compliance www.vishay.com/doc?99912 please see DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-123 Weight: approx. 9.4 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART 1N4448W-G ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS 1N4448W-G3-08 or 1N4448W-G3-18 Single AJ Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 75 V VRRM 100 V f ≥ 50 Hz IF(AV) 150 mA t < 1 s and Tj = 25 °C IFSM 500 mA Ptot 500 mW SYMBOL VALUE UNIT RthJA 350 K/W Junction temperature Tj 150 °C Storage temperature Tstg -65 to +150 °C Operating temperature Top -55 to +150 °C Reverse voltage Repetitive peak reverse voltage Average rectified current half wave rectification with resistive load (1) Surge current Power dissipation (1) THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.1, 07-Jul-17 Document Number: 85409 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4448W-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 100 mA VF IF = 5 mA VF VR = 20 V IR VR = 75 V IR 5 μA VR = 20 V, TJ = 150 °C IR 50 μA 4 pF 4 ns Forward voltage Leakage current Capacitance MIN. TYP. MAX. UNIT 1 V 0.62 VF = VR = 0 V IF = 10 mA, iR = 1 mA, VR = 6 V, RL = 100 Ω Reverse recovery time trr 0.72 V 25 nA TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) mW 1000 103 900 800 Tj = 100 °C 2 10 IF (mA) 700 Ptot Tj = 25 °C 10 600 500 1 400 300 10- 1 200 10- 2 100 0 0 1 2 VF (V) 18105 0 100 17439 Fig. 1 - Forward Characteristics 200 °C Tamb Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 104 Tj = 25 °C 5 2 10 Tj = 25 °C 1.1 f = 1 MHz f = 1 kHz 3 1.0 CD (VR) 2 102 5 CD (0 V) Rf (Ω) 5 0.9 0.8 2 10 5 0.7 2 10-2 17438 10-1 1 10 102 IF (mA) Fig. 2 - Dynamic Forward Resistance vs. Forward Current 0 17440 2 4 6 8 10 VR (V) Fig. 4 - Relative Capacitance vs. Reverse Voltage Rev. 1.1, 07-Jul-17 Document Number: 85409 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4448W-G www.vishay.com Vishay Semiconductors 104 5 2 103 IR (nA) 5 2 102 5 2 10 5 VR = 20 V 2 1 0 100 17441 200 Tj (°C) Fig. 5 - Leakage Current vs. Junction Temperature A 100 IFRM I 5 4 3 2 V = tp/T IFRM V=0 10 T = 1/fp tp t 0.1 5 4 3 2 T 0.2 1 0.5 5 4 3 2 0.1 18106 10-5 2 5 10-4 2 5 10-3 2 5 10-2 2 5 10-1 2 5 1 2 5 10 s tp Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration Rev. 1.1, 07-Jul-17 Document Number: 85409 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4448W-G www.vishay.com Vishay Semiconductors 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.7 (0.067) 3.85 (0.152) 1.40 (0.055) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.1, 07-Jul-17 Document Number: 85409 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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