1N4448W
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Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
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Models
Available
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
CIRCUIT CONFIGURATION
TYPE MARKING
REMARKS
1N4448W-E3-08 or 1N4448W-E3-18
1N4448W-HE3-08 or 1N4448W-HE3-18
Single
A3
Tape and reel
SYMBOL
VALUE
UNIT
VR
75
V
VRRM
100
V
f 50 Hz
IF(AV)
150
mA
t < 1 s and Tj = 25 °C
IFSM
500
mA
Ptot
500
mW
SYMBOL
VALUE
UNIT
RthJA
350
K/W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-65 to +150
°C
Operating temperature
Top
-55 to +150
°C
1N4448W
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Repetitive peak reverse voltage
Average rectified current half wave
rectification with resistive load (1)
Surge current
Power dissipation
(1)
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Thermal resistance junction to ambient air (1)
Note
(1) Valid provided that electrodes are kept at ambient temperature
Rev. 1.6, 23-Feb-18
Document Number: 85722
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4448W
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
IF = 100 mA
VF
IF = 5 mA
VF
VR = 20 V
IR
VR = 75 V
IR
5
μA
VR = 20 V, TJ = 150 °C
IR
50
μA
4
pF
4
ns
Forward voltage
Leakage current
Capacitance
MIN.
TYP.
MAX.
UNIT
1
V
0.62
VF = VR = 0 V
IF = 10 mA, iR = 1 mA,
VR = 6 V, RL = 100
Reverse recovery time
trr
0.72
V
25
nA
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
mW
1000
103
900
800
Tj = 100 °C
2
10
IF (mA)
700
Ptot
Tj = 25 °C
10
600
500
1
400
300
10- 1
200
10- 2
100
0
0
1
2
VF (V)
18105
0
100
17439
Fig. 1 - Forward Characteristics
200 °C
Tamb
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
104
Tj = 25 °C
5
2
10
Tj = 25 °C
1.1
f = 1 MHz
f = 1 kHz
3
1.0
CD (VR)
2
102
5
CD (0 V)
Rf (Ω)
5
0.9
0.8
2
10
5
0.7
2
10-2
17438
10-1
1
10
102
IF (mA)
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
0
17440
2
4
6
8
10
VR (V)
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Rev. 1.6, 23-Feb-18
Document Number: 85722
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4448W
www.vishay.com
Vishay Semiconductors
104
5
2
103
IR (nA)
5
2
102
5
2
10
5
VR = 20 V
2
1
0
100
17441
200
Tj (°C)
Fig. 5 - Leakage Current vs. Junction Temperature
A
100
IFRM
I
5
4
3
2
V = tp/T
IFRM
V=0
10
T = 1/fp
tp
t
0.1
5
4
3
2
T
0.2
1
0.5
5
4
3
2
0.1
18106
10-5
2
5
10-4
2
5
10-3
2
5
10-2
2
5
10-1
2
5
1
2
5
10 s
tp
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
Rev. 1.6, 23-Feb-18
Document Number: 85722
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4448W
www.vishay.com
Vishay Semiconductors
0.10 (0.004)
0.15 (0.006)
8°
0.45 (0.018)
0.25 (0.010)
0° to
0.2 (0.008)
1 (0.039)
1.35 (0.053)
0.1 (0.004) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
2.5 (0.098)
0.85 (0.033)
3.55 (0.140)
1.7 (0.067)
3.85 (0.152)
1.40 (0.055)
0.45 (0.018)
0.65 (0.026)
0.85 (0.033)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.6, 23-Feb-18
Document Number: 85722
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000