1N4448WS-G3-08

1N4448WS-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diodes • AEC-Q101 qualified available (part number on request) • Base P/N-G3 - green, commercial grade • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-323 Weight: approx. 4 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART 1N4448WS-G ORDERING CODE 1N4448WS-G3-08 or 1N4448WS-G3-18 CIRCUIT CONFIGURATION Single TYPE MARKING AJ REMARKS Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Repetitive peak reverse voltage Average rectified current half wave rectification with resistive load (1) Surge forward current Power dissipation (1) TEST CONDITION SYMBOL VR VRRM VALUE 75 100 UNIT V V f ≥ 50 Hz IF(AV) 150 mA t < 1 s and Tj = 25 °C IFSM Ptot 350 200 mA mW VALUE 650 150 -65 to +150 -55 to +150 UNIT K/W °C °C °C THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air (1) Junction temperature Storage temperature range Operating temperature range TEST CONDITION SYMBOL RthJA Tj Tstg Top Note (1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Leakage current Diode capacitance Reverse recovery time TEST CONDITION IF = 100 mA IF = 5 mA VR = 20 V VR = 75 V VR = 20 V, Tj = 150 °C VF = VR = 0 V IF = 10 mA, iR = 1 mA, VR = 6 V, RL = 100 Ω SYMBOL VF VF IR IR IR CD trr MIN. 0.620 TYP. MAX. 1 0.720 25 5 50 4 UNIT V V nA μA μA pF 4 ns Rev. 1.3, 07-Jul-17 Document Number: 85414 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4448WS-G www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 250 Ptot - Power Dissipation (mW) 103 Tj = 100 °C 102 Tj = 25 °C IF (mA) 10 1 10- 1 200 150 100 50 0 10- 2 0 1 0 2 50 Fig. 1 - Forward Characteristics 100 150 Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 104 Tj = 25 °C 5 Tj = 25 °C 1.1 f = 1 MHz f = 1 kHz 2 200 Tamb - Ambient Temperature (°C) 20324 VF (V) 18105 103 1.0 CD (VR) 2 102 5 CD (0 V) Rf (Ω) 5 0.9 0.8 2 10 5 0.7 2 10-2 17438 10-1 1 0 102 10 2 Fig. 2 - Dynamic Forward Resistance vs. Forward Current 4 6 8 10 VR (V) 17440 IF (mA) Fig. 4 - Relative Capacitance vs. Reverse Voltage 104 5 2 103 IR (nA) 5 2 102 5 2 10 5 VR = 20 V 2 1 0 17441 100 200 Tj (°C) Fig. 5 - Leakage Current vs. Junction Temperature Rev. 1.3, 07-Jul-17 Document Number: 85414 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4448WS-G www.vishay.com Vishay Semiconductors 100 5 4 3 2 I T = 1/fP IFRM 10 IFRM (A) n = tP/T tP n=0 t T 5 4 3 2 0.1 0.2 1 0.5 5 4 3 2 0.1 10-5 2 5 10-4 2 5 10-3 2 5 17442 2 10-2 5 2 10-1 5 1 2 5 10 tP (s) Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration 0.1 [0.004] max. 0.15 [0.006] 0.10 [0.004] 0.2 [0.008] 0.8 [0.031] 1.15 [0.045] PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0° - 8° 0.40 [0.016] 0.25 [0.010] 1.95 [0.077] 2.50 [0.098] 1.1 [0.043] 0.20 [0.008] 0.40 [0.016] 2.85 [0.112] 1.5 [0.059] 1.60 [0.063] Cathode bar Footprint recommendation: 1.6 [0.063] Document no.: S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 6 - Date: 23.Sept.2016 17443 0.8 [0.031] 0.6 [0.024] 0.8 [0.031] Rev. 1.3, 07-Jul-17 Document Number: 85414 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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