1N4454-TAP

1N4454 Vishay Semiconductors formerly General Semiconductor Small-Signal Diode Reverse Voltage 100V Forward Current 150mA DO-204AH (DO-35 Glass) Features • Silicon Epitaxial Planar Diode • Fast switching diode Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: F2/10K per Ammo tape (52mm), 50K/box F3/10K per 13” reel (52mm tape), 50K/box Dimensions in inches and (millimeters) Maximum Ratings and Thermal Characteristics (T Parameter A = 25°C unless otherwise noted) Symbol Limit Unit VR 75 V Peak reverse voltage VRM 100 V Maximum average rectified current half wave rectification with resistive load at Tamb = 25°C and f ≥ 50Hz(1) IF(AV) 150 mA Surge forward current at t < 1s and Tj = 25°C IFSM 500 mA (1) Ptot 500 mW RθJA 350 °C/W Maximum junction temperature TJ 175 °C Storage temperature range TS –65 to +175 °C Reverse voltage Maximum power dissipation at Tamb = 25°C (1) Thermal resistance junction to ambient air Electrical Characteristics (T A = 25°C unless otherwise noted) Parameter Symbol Min. Max. Unit VF – 1.0 V IR – 100 5 nA µA V(BR)R 100 – V Ctot – 2 pF Reverse recovery time from IF = 10mA to IR = 1mA, VR = 6V, RL = 100Ω trr – 4 ns Rectification efficiency at f = 100MHz, VRF = 2V ηv 0.45 – – Maximum forward voltage drop at IF = 10mA Leakage current at VR = 50V at VR = 75V Reverse breakdown voltage tested with 100µA pulses Capacitance at VF = VR = 0V Note: (1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature Document Number 88110 13-May-02 www.vishay.com 1 1N4454 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Forward Characteristics mA 103 Dynamic Forward Resistance vs Forward Current Ω 10 4 TJ = 25°C f = 1.0 kHz TJ = 100°C 102 rF IF 10 3 TJ = 25°C 10 10 2 1 10 10–1 10–2 0 1 10 –2 2V 1 10 –1 1 VF IF Admissible Power Dissipation vs Ambient Temperature mW 1000 10 2 mA 10 Relative Capacitance vs Reverse Voltage 1.1 TJ = 25°C f = 1.0MHz 800 Ptot Ctot (VR) 1.0 Ctot (0V) 600 0.9 400 0.8 200 0.7 0 0 200°C 100 0 2 4 6 Tamb Leakage Current vs Junction Temperature nA 104 A 100 Admissible Repetitive Peak Forward Current vs Pulse Duration T = 1/fp I v = tp/T IR IFRM 103 10 IFRM n=0 tp t 0.1 VR = 20V 102 10V 8 VR T 0.2 1 0.5 10 1 0 200°C 100 Tj www.vishay.com 2 0.1 10 –5 10 –4 10 –3 10 –2 10 –1 1 10s tp Document Number 88110 13-May-02