Not for New Designs
1N4383GP, 1N4384GP, 1N4385GP, 1N4585GP, 1N4586GP
www.vishay.com
Vishay General Semiconductor
Glass Passivated Junction Plastic Rectifier
FEATURES
SUPERECTIFIER
• Superectifier
application
®
structure
for
high
reliability
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
DO-15 (DO-204AC)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes application.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
200 V, 400 V, 600 V, 800 V, 1000 V
IFSM
50 A
IR
5.0 μA
MECHANICAL DATA
Case: DO-15 (DO-204AC), molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
VF
1.0 V
TJ max.
175 °C
Package
DO-15 (DO-204AC)
Circuit configuration
Single
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) (1)
PARAMETER
SYMBOL 1N4383GP 1N4384GP 1N4385GP 1N4585GP 1N4586GP
UNIT
Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
200
400
600
800
1000
V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 100 °C
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
50
A
Maximum full load reverse current, full cycle average
0.375"(9.5 mm) lead length at TA = 100 °C
IR(AV)
Operating junction and storage temperature range
TJ, TSTG
275
250
225
-65 to +175
200
200
μA
°C
Note
(1) JEDEC® registered values
Revision: 05-Oct-2021
Document Number: 88507
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Not for New Designs
1N4383GP, 1N4384GP, 1N4385GP, 1N4585GP, 1N4586GP
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous
forward voltage
1.0 A
Maximum DC reverse
current at rated DC
blocking voltage
SYMBOL
1N4383GP
1N4384GP
1N4385GP
TA = 150 °C
Typical reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
Typical junction
capacitance
4.0 V, 1 MHz
1N4586GP
1.0
VF
TA = 25 °C
1N4585GP
UNIT
V
5.0
IR
μA
250
trr (1)
2.0
μs
CJ
15
pF
Note
(1) JEDEC registered values
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
RθJA
1N4383GP
1N4384GP
1N4385GP
(1)
1N4585GP
1N4586GP
45
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, PCB mounted
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1N4385GP-E3/54
0.425
54
4000
13" diameter paper tape and reel
1N4385GP-E3/73
0.425
73
2000
Ammo pack packaging
Revision: 05-Oct-2021
Document Number: 88507
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Not for New Designs
1N4383GP, 1N4384GP, 1N4385GP, 1N4585GP, 1N4586GP
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10
Instantaneous Reverse Leakage
Current (μA)
Average Forward Rectified Current (A)
1.0
0.8
0.6
0.4
60 Hz
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0.2
0
1
TJ = 75 °C
0.1
TJ = 25 °C
0.01
25
50
75
100
125
150
175
0
200
20
40
60
80
Ambient Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
50
40
30
20
10
0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
1
10
1
100
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
Transient Thermal Impedance (°C/W)
100
Instantaneous Forward Current (A)
100
100
TA = 100 °C
8.3 ms Single Half Sine-Wave
Junction Capacitance (pF)
Peak Forward Surge Current (A)
TJ = 125 °C
10
1
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
1
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 05-Oct-2021
Document Number: 88507
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Not for New Designs
1N4383GP, 1N4384GP, 1N4385GP, 1N4585GP, 1N4586GP
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-15 (DO-204AC)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
DIA.
1.0 (25.4)
MIN.
Revision: 05-Oct-2021
Document Number: 88507
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000