1N4728A to 1N4761A
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Vishay Semiconductors
Zener Diodes
FEATURES
• Silicon planar power Zener diodes
• For use in stabilizing and clipping circuits with
high power rating
• Standard Zener voltage tolerance is ± 5 %
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
LINKS TO ADDITIONAL RESOURCES
• Voltage stabilization
3D 3D
3D Models
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
3.3 to 75
V
Test current IZT
3.3 to 76
mA
VZ specification
Thermal equilibrium
Circuit configuration
UNIT
Single
ORDERING INFORMATION
DEVICE NAME
1N4728A to 1N4761A
1N4728A to 1N4761A
ORDERING CODE
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
1N4728A to 1N4761A -series-TR
5000 per 13" reel
25 000/box
1N4728A to 1N4761A-series-TAP
5000 per ammopack
(52 mm tape)
25 000/box
PACKAGE
PACKAGE NAME
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING CONDITIONS
DO-41 (DO-204AL)
310 mg
UL 94 V-0
MSL level 1
(according J-STD-020)
Peak temperature max. 260 °C
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
TEST CONDITION
SYMBOL
VALUE
UNIT
Valid provided that leads at a distance of 4 mm
from case are kept at ambient temperature
Ptot
1300
mW
IZ
PV/VZ
mA
RthJA
110
K/W
Zener current
Valid provided that leads at a distance of 4 mm
Thermal resistance junction to ambient air
from case are kept at ambient temperature
Junction temperature
Storage temperature range
Forward voltage (max.)
IF = 200 mA
Tj
175
°C
Tstg
-65 to +175
°C
VF
1.2
V
Rev. 2.5. 25-Nov -2021
Document Number: 85816
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4728A to 1N4761A
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE (1)
PART
NUMBER
TEST
CURRENT
VZ at IZT1
IZT1
IZT2
V
mA
mA
NOM.
REVERSE LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
f = 1 kHz
IR at VR
ZZT at IZT1 ZZK at IZT2
IR
IZM
Ω
mA
mA
μA
V
MAX.
TYP.
MAX.
SURGE
CURRENT (3)
REGULATOR
CURRENT (2)
MAX.
1N4728A
3.3
76
1
100
1
10
400
1380
276
1N4729A
3.6
69
1
100
1
10
400
1260
252
1N4730A
3.9
64
1
50
1
9
400
1190
234
1N4731A
4.3
58
1
10
1
9
400
1070
217
1N4732A
4.7
53
1
10
1
8
500
970
193
1N4733A
5.1
49
1
10
1
7
550
890
178
1N4734A
5.6
45
1
10
2
5
600
810
162
1N4735A
6.2
41
1
10
3
2
700
730
146
1N4736A
6.8
37
1
10
4
3.5
700
660
133
1N4737A
7.5
34
0.5
10
5
4
700
605
121
1N4738A
8.2
31
0.5
10
6
4.5
700
550
110
1N4739A
9.1
28
0.5
10
7
5
700
500
100
1N4740A
10
25
0.25
10
7.6
7
700
454
91
1N4741A
11
23
0.25
5
8.4
8
700
414
83
1N4742A
12
21
0.25
5
9.1
9
700
380
76
1N4743A
13
19
0.25
5
9.9
10
700
344
69
1N4744A
15
17
0.25
5
11.4
14
700
304
61
1N4745A
16
15.5
0.25
5
12.2
16
700
285
57
1N4746A
18
14
0.25
5
13.7
20
750
250
50
1N4747A
20
12.5
0.25
5
15.2
22
750
225
45
1N4748A
22
11.5
0.25
5
16.7
23
750
205
41
1N4749A
24
10.5
0.25
5
18.2
25
750
190
38
1N4750A
27
9.5
0.25
5
20.6
35
750
170
34
1N4751A
30
8.5
0.25
5
22.8
40
1000
150
30
1N4752A
33
7.5
0.25
5
25.1
45
1000
135
27
1N4753A
36
7
0.25
5
27.4
50
1000
125
25
1N4754A
39
6.5
0.25
5
29.7
60
1000
115
23
1N4755A
43
6
0.25
5
32.7
70
1500
110
22
1N4756A
47
5.5
0.25
5
35.8
80
1500
95
19
1N4757A
51
5
0.25
5
38.8
95
1500
90
18
1N4758A
56
4.5
0.25
5
42.6
110
2000
80
16
1N4759A
62
4
0.25
5
47.1
125
2000
70
14
1N4760A
68
3.7
0.25
5
51.7
150
2000
65
13
1N4761A
75
3.3
0.25
5
56
175
2000
60
12
Notes
(1) Based on DC measurement at thermal equilibrium while maintaining the lead temperature (T ) at 30 °C + 1 °C, 9.5 mm (3/8") from the
L
diode body
(2) Valid provided that electrodes at a distance of 4 mm from case are kept at ambient temperature
(3) t = 10 ms.
p
Rev. 2.5. 25-Nov -2021
Document Number: 85816
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4728A to 1N4761A
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Ptot - Power Dissipation (mW)
1400
1200
1000
800
600
400
200
0
0
50
100
150
200
Tamb- Ambient Temperature (°C)
Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature
Ptot = f (Tamb)
PACKAGE DIMENSIONS in millimeters (inches): DO-41 (DO-204AL)_1N47xx
4.1 max. [0.161]
3.3 min. [0.128]
26 min. [1.024]
Ø 2.1 min. [0.081]
26 min. [1.024]
Ø 2.6 max. [0.102]
Ø 0.86 max. [0.034]
Ø 0.7 min. [0.027]
Cathode Identification
Document no. S8-V-3901.04-001(4)
Rev. 1 - Date: 30. Nov. 2011
22624
Rev. 2.5. 25-Nov -2021
Document Number: 85816
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Jan-2024