1N4934E-E3/54

1N4933, 1N4934, 1N4935, 1N4936, 1N4937 www.vishay.com Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability DO-41 (DO-204AL) • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS Related Documents Marking For use in fast switching rectification of power supply, inverters, converters and freewheeling diodes for consumer and telecommunication. PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 1.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V IFSM 30 A trr 200 ns IR 5.0 μA VF 1.2 V TJ max. 150 °C Package DO-41 (DO-204AL) Circuit configuration Single Case: DO-41 (DO-204AL), molded epoxy body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 3 suffix meets JESD 201 class 1A whisker test per Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL 1N4933 1N4934 1N4935 1N4936 1N4937 UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 V Maximum RMS voltage VRMS 35 70 145 280 420 V Maximum DC blocking voltage VDC 50 100 200 400 600 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA= 75 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Maximum reverse recovery current Operating junction and storage temperature range IRM 2.0 A TJ, TSTG -50 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage TEST CONDITIONS 1.0 A VF TA= 25 °C Maximum DC reverse current at rated DC blocking voltage SYMBOL TA= 100 °C IR 1N4933 1N4934 1N4935 1.2 5.0 100 1N4936 1N4937 UNIT V μA Maximum reverse recovery time IF = 1.0 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM trr 200 ns Typical junction capacitance 4.0 V, 1 MHz CJ 12 pF Revision: 01-Jul-2020 Document Number: 88508 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4933, 1N4934, 1N4935, 1N4936, 1N4937 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance 1N4933 1N4934 1N4935 RθJA (1) 55 RθJL (1) 25 1N4936 1N4937 UNIT °C/W Note (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 1N4933-E3/54 0.33 54 5500 13" diameter paper tape and reel 1N4933-E3/73 0.33 73 3000 Ammo pack packaging 1.0 30 Peak Forward Surge Current (A) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 0.8 0.375" (9.5 mm) Lead Length 0.6 Ipk =π IAV 0.4 Capacitive Loads Ipk 5.0 = IAV 10 20 0.2 0 0 25 50 100 75 150 125 1.0 Cycle 20 10 0 175 100 10 1 Ambient Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curves Fig. 3 - Maximum Non-repetitive Peak Forward Surge Current 10 D = 0.3 1.0 D = 0.8 D = 0.5 D = 0.2 D = 1.0 0.8 D = 0.1 0.6 T 0.4 0.2 D = tp/T tp 0.8 1.0 0 0 0.2 0.4 0.6 1.2 Instantaneous Forward Current (A) 1.2 Average Power Loss (W) TA = 75 °C 8.3 ms Single Half Sine-Wave 1 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 0.1 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Average Forward Current (A) Instantaneous Forward Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 4 - Typical Instantaneous Forward Characteristics Revision: 01-Jul-2020 Document Number: 88508 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4933, 1N4934, 1N4935, 1N4936, 1N4937 Vishay General Semiconductor 100 10 Typical Thermal Impedance (°C/W) Instantaneous Reverse Current (μA) www.vishay.com TJ = 100 °C 1 TJ = 25 °C 0.1 0.01 20 0 40 60 80 100 10 1 0.1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 5 - Typical Reverse Characteristics Fig. 7 - Typical Transient Thermal Impedance Junction Capacitance (pF) 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.1 1 10 100 Reverse Voltage (V) Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-41 (DO-204AL) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Note 0.026 ( 0.66 ) • Lead diameter is ---------------------------------- for suffix “E” part numbers 0.023 ( 0.58 ) Revision: 01-Jul-2020 Document Number: 88508 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000