1N5059, 1N5060, 1N5061, 1N5062
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Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically
envelope
sealed
axial-leaded
glass
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
949539
DESIGN SUPPORT TOOLS
APPLICATIONS
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• Rectification diode, general purpose
Models
Available
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
1N5062
1N5062TR
5000 per 10" tape and reel
25 000
1N5062
1N5062TAP
5000 per ammopack
25 000
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
1N5059
VR = 200 V; IF(AV) = 2 A
SOD-57
1N5060
VR = 400 V; IF(AV) = 2 A
SOD-57
1N5061
VR = 600 V; IF(AV) = 2 A
SOD-57
1N5062
VR = 800 V; IF(AV) = 2 A
SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse voltage
Peak forward surge current
Average forward current
Pulse energy in avalanche mode, non repetitive
(inductive load switch off)
Junction and storage temperature range
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
1N5059
VR = VRRM
200
V
1N5060
VR = VRRM
400
V
1N5061
VR = VRRM
600
V
1N5062
VR = VRRM
800
V
tp = 10 ms, half sine wave
IFSM
50
A
TthJA = 45 K/W, Tamb = 50 °C
IF(AV)
2
A
TthJA = 100 K/W, Tamb = 75 °C
IF(AV)
0.8
A
I(BR)R = 1 A, inductive load
ER
20
mJ
Tj = Tstg
-55 to +175
°C
See electrical characteristics
Rev. 1.7, 20-Feb-18
Document Number: 86000
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5059, 1N5060, 1N5061, 1N5062
www.vishay.com
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
RthJA
45
K/W
On PC board with spacing 25 mm
RthJA
100
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX
UNIT
IF = 1 A
VF
-
-
1
V
IF = 2.5 A
VF
-
-
1.15
V
VR = VRRM
IR
-
-
1
μA
VR = VRRM, Tj = 100 °C
IR
-
-
10
μA
VR = VRRM, Tj = 150 °C
IR
-
-
100
μA
1N5059
V(BR)R
225
-
1600
V
1N5060
V(BR)R
450
-
1600
V
1N5061
V(BR)R
650
-
1600
V
1N5062
V(BR)R
900
-
1600
V
VR = 0 V, f = 1 MHz
CD
-
40
-
pF
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
-
4
μs
Forward voltage
Reverse current
IR = 100 μA
Breakdown voltage
Diode capacitance
Reverse recovery time
PART
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
3.0
I FAV - Average Forward Current (A)
PR - Reverse Power Dissipation ( mW )
200
V R = VRRM
R thJA =
160
1N5062
45 K/W
120
100 K/W
1N5061
160 K/W
80
1N5060
1N5059
40
0
25
75
100
125
150
1.5
1.0
100
IF - Forward Current ( A )
V R = VRRM
100
10
1
0.1
25
20 40 60 80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1000
I R - Reverse Current ( µA )
0
15763_1
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
15765
RthJA = 100 K/W
PCB: d = 25 mm
0.5
175
Tj - Junction Temperature ( °C )
15764
R thJA = 45 K/W
l =10 mm
2.0
0.0
50
V R = VRRM
half sinewave
2.5
50
75
100
125
150
175
Tj - Junction Temperature ( °C )
Fig. 2 - Max. Reverse Current vs. Junction Temperature
10
1
Tj = 175 °C
Tj = 25°C
0.1
0.01
0.001
0
15762
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
V F - Forward Voltage ( V )
Fig. 4 - Max. Forward Current vs. Forward Voltage
Rev. 1.7, 20-Feb-18
Document Number: 86000
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5059, 1N5060, 1N5061, 1N5062
www.vishay.com
Vishay Semiconductors
C D - Diode Capacitance ( pF )
50
f =1 MHz
40
30
20
10
0
0.1
1
10
100
V R - Reverse Voltage ( V )
15766
Fig. 5 - Diode Capacitance vs. Reverse Voltage
3.6 (0.142) max.
0.82 (0.032) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
20543
Rev. 1.7, 20-Feb-18
Document Number: 86000
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Jan-2024