1N5624, 1N5625, 1N5626, 1N5627
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Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
949588
DESIGN SUPPORT TOOLS
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• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Models
Available
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per
MIL-STD-750, method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
• Rectification diode, general purpose
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
1N5627-TR
1N5627-TAP
2500 per 10" tape and reel
2500 per ammopack
12 500
12 500
TYPE DIFFERENTIATION
PACKAGE
VR = 200 V; IF(AV) = 3 A
VR = 400 V; IF(AV) = 3 A
VR = 600 V; IF(AV) = 3 A
VR = 800 V; IF(AV) = 3 A
SOD-64
SOD-64
SOD-64
SOD-64
1N5627
1N5627
PARTS TABLE
PART
1N5624
1N5625
1N5626
1N5627
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode, non repetitive
(inductive load switch off)
i2*t-rating
Junction and storage temperature range
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
See electrical characteristics
1N5624
1N5625
1N5626
1N5627
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IFSM
IFRM
IF(AV)
200
400
600
800
100
18
3
V
V
V
V
A
A
A
tp = 20 μs, half sine wave,
Tj = 175 °C
PR
1000
W
I(BR)R = 1 A, Tj = 175 °C
ER
20
mJ
i2*t
40
-55 to +175
A2*s
°C
tp = 10 ms, half sine wave
Tj = Tstg
Rev. 1.6, 22-Feb-18
Document Number: 86063
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5624, 1N5625, 1N5626, 1N5627
www.vishay.com
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
UNIT
l = 10 mm, TL = constant
RthJA
25
K/W
On PC board with spacing 25 mm
RthJA
70
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
Reverse current
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 3 A
VF
-
-
1
V
VR = VRRM
IR
-
0.1
1
μA
VR = VRRM, Tj = 100 °C
IR
-
5
10
μA
IR = 100 A, tp/T = 0.01,
tp = 0.3 ms
V(BR)
-
-
1600
V
VR = 4 V, f = 1 MHz
CD
-
40
60
pF
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
3.5
5
μs
IF = 1 A, dI/dt = 5 A/μs, VR = 50 V
trr
-
4.5
7.5
μs
IF = 1 A, dI/dt = 5 A/μs
Qrr
-
8
12
C
Breakdown voltage
Diode capacitance
Reverse recovery time
PART
Reverse recovery charge
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
3.5
30
20
l
l
10
0
94 9563
2.5
2.0
1.5
1.0
5
10
15
20
25
RthJA = 70 K/W
PCB: d = 25 mm
0.5
TL = constant
0
VR = VRRM
half sinewave
RthJA = 25 K/W
l = 10 mm
3.0
IFAV - Average Forward Current (A)
RthJA - Therm. Resist.
Junction/Ambient (K/W)
40
0.0
30
I - Lead Length (mm)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
0
20
40
60
80
100 120 140 160 180
Tamb - Ambient Temperature (°C)
16393
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1000
100.000
I
F
– Forward Current ( A )
10.000
1.000
0.100
T j =175°C
T j =25°C
0.010
I R – R everse Current ( A )
V R = V RRM
0.001
16392
100
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V F – Forward Voltage ( V )
Fig. 2 - Forward Current vs. Forward Voltage
25
16394
50
75
100
125
150
T j – Junction Temperature ( °C )
175
Fig. 4 - Reverse Current vs. Junction Temperature
Rev. 1.6, 22-Feb-18
Document Number: 86063
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5624, 1N5625, 1N5626, 1N5627
www.vishay.com
Vishay Semiconductors
100
V R = V RRM
200
PR –L imit
@ 100%V R
150
PR –L imit
@ 80%V R
100
50
80
70
60
50
40
30
20
10
0
0
25
16395
f=1MHz
90
250
CD – Diode Capacitance ( pF )
PR – R everse Power Dissipation ( mW )
300
50
75
100
125
150
T j – Junction Temperature ( °C )
175
0.1
1.0
10.0
V R – R everse Voltage ( V )
16396
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
100.0
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Rev. 1.6, 22-Feb-18
Document Number: 86063
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay
Disclaimer
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2022
1
Document Number: 91000
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1N5624-TAP 1N5627-TAP 1N5625-TAP 1N5626-TAP 1N5625-TR 1N5626-TR 1N5624-TR 1N5624-E3/54
1N5627-E3/54 1N5626-E3/54 1N5627-TR 1N5625-E3/54 1N5624GP/1 1N5624GP-E3/1 1N5625GP/1 1N5625GPE3/1 1N5626GP/1 1N5626GP-E3/1 1N5627GP/1 1N5627GP-E3/1 1N5626 1N5624GP/4 1N5624GP/54
1N5624GP-E3/4 1N5624GP-E3/51 1N5624GP-E3/54 1N5624GPHE3/54 1N5625GP/4 1N5625GP/54 1N5625GPE3/4 1N5625GP-E3/51 1N5625GP-E3/54 1N5625GPHE3/54 1N5626GP/4 1N5626GP/54 1N5626GP-E3/4
1N5626GP-E3/51 1N5626GP-E3/54 1N5626GPHE3/54 1N5627GP/4 1N5627GP/54 1N5627GP-E3/4 1N5627GPE3/51 1N5627GP-E3/54 1N5627GPHE3/54 1N5624/4 1N5625/4 1N5626/4 1N5627/4 1N5627GP-E3/73
