1N5818-E3/1

1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-204AL (DO-41) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 20 V, 30 V, 40 V IFSM 25 A VF 0.45 V, 0.55 V, 0.60 V TJ max. 125 °C MECHANICAL DATA Case: DO-204AL (DO-41) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL 1N5817 1N5818 1N5819 UNIT Maximum repetitive peak reverse voltage VRRM 20 30 40 V Maximum RMS voltage VRMS 14 21 28 V Maximum DC blocking voltage VDC 20 30 40 V Maximum non-repetitive peak reverse voltage VRSM 24 36 48 V Maximum average forward rectified current at 0.375" (9.5 mm) lead length at TL = 90 °C IF(AV) 1.0 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 25 A dV/dt 10 000 V/μs TJ, TSTG - 65 to + 125 °C Voltage rate of change (rated VR) Operating junction and storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL 1N5817 1N5818 1N5819 UNIT (1) 0.450 0.550 0.600 V 0.750 0.875 0.900 V Maximum instantaneous forward voltage 1.0 VF Maximum instantaneous forward voltage 3.1 VF (1) TA = 25 °C Maximum average reverse current at rated DC blocking voltage Typical junction capacitance TA = 100 °C 4.0 V, 1.0 MHz 1.0 IR (1) CJ mA 10 125 110 pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle Document Number: 88525 Revision: 20-Oct-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 1N5817 thru 1N5819 Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance 1N5817 1N5818 RθJA (1) 50 (1) 15 RθJL 1N5819 UNIT °C/W Note (1) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5 mm) lead length with 1.5" x 1.5" (38 mm x 38 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 1N5819-E3/54 0.332 54 5500 13" diameter paper tape and reel 1N5819-E3/73 0.332 73 3000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Forward Current (A) Average Forward Current (A) 1.0 0.75 Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 0.5 0.25 Pulse Width = 300 μs 1 % Duty Cycle 1 TJ = 25 °C 0.1 0.01 0 0 20 40 80 60 100 120 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Case Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 30 100 Instantaneous Reverse Current (mA) Peak Forward Surge Current (A) TJ = 125 °C 10 25 20 15 10 5 10 TJ = 125 °C 1 0.1 TJ = 75 °C 0.01 TJ = 25 °C 0.001 0 1 10 100 0 20 40 60 80 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 100 Document Number: 88525 Revision: 20-Oct-09 1N5817 thru 1N5819 Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 1N5817 1 10 1 0.1 0.01 10 0.1 10 100 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Fig. 7 - Typical Transient Thermal Impedance Junction Capacitance (pF) 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 1N5818 and 1N5819 10 0.1 1 10 100 Reverse Voltage (V) Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Document Number: 88525 Revision: 20-Oct-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000