1N914
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diodes
FEATURES
• Fast switching speed
• High reliability
• High conductance
• For general purpose switching applications
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
ADDITIONAL RESOURCES
3D 3D
3D Models
MECHANICAL DATA
Case: DO-35 (DO-204AH)
Weight: approx. 125 mg
Cathode band color: black
Packaging codes / options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE
PART
ORDERING CODE
TYPE MARKING
CIRCUIT CONFIGURATION
REMARKS
1N914
1N914TR or 1N914TAP
1N914
Single
Tape and reel / ammopack
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Repetitive peak reverse voltage
VRRM
100
V
Working peak reverse voltage
VRWM
75
V
V
DC blocking voltage
VR
75
VR(RMS)
53
V
IF
300
mA
Half wave rectification with
resistive load and f > 50 MHz
IF(AV)
200
mA
A
RMS Reverse voltage
Forward continuous current
Average rectified current
Non repetitive peak forward surge current
Power dissipation
UNIT
t=1s
IFSM
1
t = 1 μs
IFSM
4
A
l = 4 mm, TL = 25 °C
Ptot
500
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
SYMBOL
VALUE
UNIT
l = 4 mm, TL = constant
RthJA
300
K/W
Tj
175
°C
Tstg
-65 to +175
°C
Rev. 2.0, 24-Feb-2020
Document Number: 85622
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N914
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Forward voltage
IF = 10 mA
VF
Breakdown voltage
IR = 100 μA
V(BR)
VR = 75 V
Peak reverse current
MAX.
UNIT
1
V
IR
5
μA
VR = 20 V, Tj = 150 °C
IR
50
μA
VR = 20 V
IR
25
nA
VR = 0, f = 1 MHz
CD
4
pF
IF = 10 mA, iR = 1 mA,
VR = 6 V, RL = 100 Ω
trr
4
ns
Diode capacitance
Reverse recovery time
MIN.
TYP.
100
V
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
1000
IR- Reverse Current (nA)
I F - Forward Current (mA)
1N914
100
Scattering Limit
10
1
T j = 25 °C
0.4
0.8
1.2
1.6
1
2.0
94 9098
V F - Forward Voltage (V)
94 9170_1
Scattering Limit
10
1
0.1
0
Tj = 25 °C
100
Fig. 1 - Forward Current vs. Forward Voltage
10
100
VR- Reverse Voltage (V)
Fig. 2 - Reverse Current vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH)
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
1.3 [0.050]
26 min. [1.024]
1.7 [0.067]
Ø 0.4 min. [0.015]
Ø 0.6 max. [0.024]
Cathode Identification
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
Rev. 2.0, 24-Feb-2020
Document Number: 85622
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 01-Jan-2019
1
Document Number: 91000
