25TTS08S

25TTS...S High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 16 A DESCRIPTION/FEATURES Anode 2 D2PAK The 25TTS...S High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. 1 3 Cathode Gate Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. PRODUCT SUMMARY VT at 16 A < 1.25 V ITSM 300 A VRRM 800 to 1600 V This product has been designed and qualified for industrial level. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE NEMA FR-4 or G10 glass fabric-based epoxy with 4 oz. (140 µm) copper 3.5 5.5 Aluminum IMS, RthCA = 15 °C/W 8.5 13.5 Aluminum IMS with heatsink, RthCA = 5 °C/W 16.5 25.0 UNITS A Note • TA = 55 °C, TJ = 125 °C, footprint 300 mm2 MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform IRMS VALUES 16 25 VRRM/VDRM ITSM UNITS A 800 to 1600 V 300 A 1.25 V dV/dt 500 V/µs dI/dt 150 A/µs - 40 to 125 °C VT 16 A, TJ = 25 °C TJ VOLTAGE RATINGS VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V 25TTS08S 800 800 25TTS12S 1200 1200 25TTS16S 1600 1600 PART NUMBER Document Number: 93704 Revision: 20-Jun-08 For technical questions, contact: diodes-tech@vishay.com IRRM/IDRM, AT 125 °C mA 10 www.vishay.com 1 25TTS...S High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 16 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle, non-repetitive surge current ITSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t Maximum on-state voltage drop VTM On-state slope resistance rt Threshold voltage VT(TO) Maximum reverse and direct leakage current Holding current IRM/IDM IH Maximum latching current IL VALUES TEST CONDITIONS TYP. MAX. TC = 93 °C, 180° conduction half sine wave UNITS 16 25 10 ms sine pulse, rated VRRM applied 300 A 10 ms sine pulse, no voltage reapplied 350 10 ms sine pulse, rated VRRM applied 450 10 ms sine pulse, no voltage reapplied 630 t = 0.1 to 10 ms, no voltage reapplied 6300 16 A, TJ = 25 °C 1.25 V 12.0 mΩ 1.0 V TJ = 125 °C TJ = 25 °C 25TTS08, 25TTS12 25TTS16 10 Anode supply = 6 V, resistive load, initial IT = 1 A Anode supply = 6 V, resistive load A2√s 0.5 VR = Rated VRRM/VDRM TJ = 125 °C A2 s - 100 100 150 mA 200 Maximum rate of rise of off-state voltage dV/dt 500 V/µs Maximum rate of rise of turned-on current dI/dt 150 A/µs VALUES UNITS TRIGGERING PARAMETER SYMBOL Maximum peak gate power TEST CONDITIONS PGM 8.0 PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum average gate power Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Anode supply = 6 V, resistive load, TJ = - 10 °C 60 Anode supply = 6 V, resistive load, TJ = 25 °C 45 Anode supply = 6 V, resistive load, TJ = 125 °C 20 Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5 Anode supply = 6 V, resistive load, TJ = 25 °C 2.0 Anode supply = 6 V, resistive load, TJ = 125 °C 1.0 TJ = 125 °C, VDRM = Rated value W mA V 0.25 2.0 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq www.vishay.com 2 TEST CONDITIONS TJ = 25 °C TJ = 125 °C For technical questions, contact: diodes-tech@vishay.com 0.9 4 µs 110 Document Number: 93704 Revision: 20-Jun-08 25TTS...S High Voltage Series Surface Mountable Phase Control SCR, 16 A Vishay High Power Products THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Soldering temperature Maximum thermal resistance, junction to case Typical thermal resistance, junction to ambient (PCB mount) SYMBOL TEST CONDITIONS TJ, TStg TS RthJC VALUES UNITS - 40 to 125 For 10 s (1.6 mm from case) 240 DC operation 1.1 °C °C/W RthJA (1) 40 Approximate weight 2 g 0.07 oz. 25TTS08S Marking device Case style D2PAK (SMD-220) 25TTS12S 25TTS16S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm] copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 Document Number: 93704 Revision: 20-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 25TTS...S High Voltage Series Vishay High Power Products Surface Mountable Phase 25TTS.. Series R thJC (DC) = 1.1 °C/ W 120 Conduc tion Angle 110 30° 60° 90° 100 120° 180° 90 0 Maximum Allowable Case Temperature (°C) Maximum Averag e On-state Power Loss (W) 130 5 10 15 25 20 RMS Limit 15 Conduction Period 10 25TTS.. Series T J = 125°C 5 0 0 110 Conduction Period 100 90 60° 90° 120° 30° 180° DC 80 5 10 15 20 25 30 350 25 30 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 300 250 200 25TTS.. Series 150 1 Peak Half Sine Wa ve On-state Current (A) 400 180° 120° 90° 60° 30° RMSLimit 10 Conduc tion Angle 25TTS.. Series TJ= 125°C 5 0 4 8 12 16 10 100 Fig. 5 - Maximum Non-Repetitive Surge Current 25 20 350 300 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Cond uc tion Ma y Not Be Ma inta ined. Initia l TJ = 125°C No Voltage Rea pp lied Rated VRRM Reapp lied 250 200 150 25TTS.. Series 100 0.01 0.1 1 Pulse Train Duration (s) Avera ge On-state Current (A) Fig. 3 - On-State Power Loss Characteristics www.vishay.com 4 20 Number Of Equal Amplitude Half Cyc le Current Pulses (N) Average On-sta te Current (A) 0 15 Avera ge On-sta te Current (A) 120 15 10 Fig. 4 - On-State Power Loss Characteristics 25TTS.. Series R thJC (DC) = 1.1 °C/ W 20 5 Average On-sta te Current (A) Fig. 2 - Current Rating Characteristics Maximum Averag e On-state Power Loss (W) DC 180° 120° 90° 60° 30° 30 Fig. 1 - Current Rating Characteristics 130 0 35 20 Pea k Half Sine Wave On-sta te Current (A) Maximum Allowable Case Tempera ture (°C) Control SCR, 16 A Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: diodes-tech@vishay.com Document Number: 93704 Revision: 20-Jun-08 25TTS...S High Voltage Series Surface Mountable Phase Control SCR, 16 A Vishay High Power Products Instantaneous On-state Current (A) 1000 100 TJ= 25°C TJ= 125°C 10 25TTS.. Series 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Transient Thermal Imped anc e Z thJC (°C/W) Fig. 7 - On-State Voltage Drop Characteristics 10 Steady State Value (DC Opera tion) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single Pulse 25TTS.. Series 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Gate Characteristics Rec tangular gate pulse a)Rec ommended load line for rated di/ dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Rec ommended load line for = 6 µs (1) (2) (3) (4) PGM = 40 W, tp = 1 ms PGM = 20 W, tp = 2 ms PGM = 8 W, tp = 5 ms PGM = 4 W, tp = 10 ms (a ) (b) VGD IGD 0.1 0.001 TJ = -10 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous Gate Voltage (V) 100 0.1 (2) (1) Frequency Limited by PG(AV) 25TTS.. Series 0.01 (3) (4) 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Thermal Impedance ZthJC Characteristics Document Number: 93704 Revision: 20-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 25TTS...S High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 16 A ORDERING INFORMATION TABLE Device code 25 T T S 16 S TRL - 1 2 3 4 5 6 7 8 1 - Current rating (25 = 25 A) 2 - Circuit configuration: 3 - T = Single thyristor Package: T = TO-220AC 4 - Type of silicon: 5 - Voltage code x 100 = VRRM 6 - S = TO-220 D2PAK (SMD-220) version 7 - Standard recovery rectifier 08 = 800 V 12 = 1200 V 16 = 1600 V None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 8 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95046 Part marking information http://www.vishay.com/doc?95054 Packaging information http://www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 93704 Revision: 20-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1