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25TTS12FP

25TTS12FP

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO-220-3

  • 描述:

    SCR PHASE CONT 1200V 25A TO220FP

  • 数据手册
  • 价格&库存
25TTS12FP 数据手册
25TTS...FP High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 25 A DESCRIPTION/FEATURES The 25TTS...FP High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. 2 (A) TO-220AB FULL-PAK Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. 1 (K) (G) 3 The fully isolated package (VINS = 2500 VRMS) is UL E78996 approved. Plastic material 94VRo. PRODUCT SUMMARY VT at 16 A < 1.25 V ITSM 300 A VRRM 800/1200 V This product has been designed and qualified for industrial level. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 18 22 A Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform IRMS VALUES 16 25 VRRM/VDRM 800/1200 ITSM UNITS A V 300 A 1.25 V dV/dt 500 V/µs dI/dt 150 A/µs - 40 to 125 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM AT 125 °C mA 25TTS08FP 800 800 25TTS12FP 1200 1200 VT 16 A, TJ = 25 °C TJ VOLTAGE RATINGS PART NUMBER Document Number: 93703 Revision: 20-Jun-08 For technical questions, contact: diodes-tech@vishay.com 10 www.vishay.com 1 25TTS...FP High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 25 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle, non-repetitive surge current ITSM TEST CONDITIONS VALUES TYP. MAX. TC = 85 °C, 180° conduction half sine wave UNITS 16 25 10 ms sine pulse, rated VRRM applied 300 10 ms sine pulse, no voltage reapplied 350 10 ms sine pulse, rated VRRM applied 450 10 ms sine pulse, no voltage reapplied 630 A Maximum I2t for fusing I2 t Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 6300 Maximum on-state voltage drop VTM 16 A, TJ = 25 °C 1.25 V 12.0 mΩ 1.0 V On-state slope resistance rt Threshold voltage VT(TO) Maximum reverse and direct leakage current IRM/IDM TJ = 125 °C TJ = 25 °C TJ = 125 °C IH Anode supply = 6 V, resistive load, initial IT = 1 A Maximum latching current IL Anode supply = 6 V, resistive load A2√s 0.5 VR = Rated VRRM/VDRM Holding current A2s 10 - 100 mA 200 Maximum rate of rise of off-state voltage dV/dt 500 V/µs Maximum rate of rise of turned-on current dI/dt 150 A/µs VALUES UNITS TRIGGERING PARAMETER SYMBOL Maximum peak gate power TEST CONDITIONS PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Anode supply = 6 V, resistive load, TJ = - 10 °C 60 Anode supply = 6 V, resistive load, TJ = 25 °C 45 Anode supply = 6 V, resistive load, TJ = 125 °C 20 Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5 Anode supply = 6 V, resistive load, TJ = 25 °C 2.0 Anode supply = 6 V, resistive load, TJ = 125 °C 1.0 TJ = 125 °C, VDRM = Rated value W mA V 0.25 2.0 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq www.vishay.com 2 TEST CONDITIONS TJ = 25 °C TJ = 125 °C For technical questions, contact: diodes-tech@vishay.com 0.9 4 µs 110 Document Number: 93703 Revision: 20-Jun-08 25TTS...FP High Voltage Series Phase Control SCR Vishay High Power Products TO-220AB FULL-PAK, 25 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS TEST CONDITIONS DC operation Marking device Document Number: 93703 Revision: 20-Jun-08 UNITS - 40 to 125 °C 1.5 °C/W 62 Mounting surface, smooth and greased Approximate weight Mounting torque VALUES 1.5 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Case style TO-220AB FULL-PAK (94/V0) For technical questions, contact: diodes-tech@vishay.com 25TTS08FP 25TTS12FP www.vishay.com 3 25TTS...FP High Voltage Series Phase Control SCR TO-220AB FULL-PAK, 25 A Maximum Averag e On-state Power Loss (W) 130 25TTS.. Series RthJC (DC) = 1.5 °C/ W 120 110 Conduc tion Angle 100 30° 90 60° 90° 120° 180° 80 70 0 5 10 15 DC 180° 120° 90° 60° 30° 30 25 20 RMSLimit 15 Conduc tion Period 10 25TTS.. Series T J = 125°C 5 0 0 20 25 30 Fig. 4 - On-State Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 110 Conduc tion Period 100 90 30° 80 60° 90° 120° 180° DC 70 5 10 15 20 25 30 350 At Any Rated Load Cond ition And With Rated V RRM App lied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 300 250 200 25TTS.. Series 150 1 10 100 Average On-state Current (A) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 25 400 180° 120° 90° 60° 30° RMSLimit 10 Conduction Angle 25TTS.. Series TJ= 125°C 5 0 0 15 Avera ge On-sta te Current (A) 120 15 10 Average On-state Current (A) 25TTS.. Series R thJC (DC) = 1.5 °C/ W 20 5 Fig. 1 - Current Rating Characteristics 130 0 35 20 Peak Half Sine Wa ve On-state Current (A) Maximum Average On-sta te Power Loss (W) Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Vishay High Power Products 4 8 12 16 20 350 300 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduc tion Ma y Not Be Mainta ined. Initia l TJ = 125°C No Voltage Rea pp lied Rated VRRM Reapp lied 250 200 150 25TTS.. Series 100 0.01 0.1 1 Avera ge On-state Current (A) Pulse Train Duration (s) Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 93703 Revision: 20-Jun-08 25TTS...FP High Voltage Series Phase Control SCR Vishay High Power Products TO-220AB FULL-PAK, 25 A Insta ntaneous On-state Current (A) 1000 100 TJ= 25°C TJ= 125°C 10 25TTS.. Series 1 0 1 2 3 4 5 Instanta neous On-state Voltage (V) Transient Thermal Impedance Z thJC (°C/W) Fig. 7 - On-State Voltage Drop Characteristics 10 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 1 Steady State Value (DC Operation) 0.1 Single Pulse 25TTS.. Series 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a)Recommended load line for rated di/ dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Rec ommended load line for = 6 µs (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) VGD IGD 0.1 0.001 TJ = -10 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) 25TTS.. Series 0.01 0.1 (3) (2) (1) Frequenc y Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics Document Number: 93703 Revision: 20-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 25TTS...FP High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 25 A ORDERING INFORMATION TABLE Device code 25 T T S 12 FP - 1 2 3 4 5 6 7 1 - Current rating (25 = 25 A) 2 - Circuit configuration: 3 - Package: T = Single thyristor T = TO-220AB 4 - Type of silicon: Standard recovery rectifier 5 - Voltage code x 100 = VRRM 6 - FULL-PAK 7 08 = 800 V 12 = 1200 V - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95072 Part marking information http://www.vishay.com/doc?95069 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 93703 Revision: 20-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
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