26MB100A

VS-MB Series www.vishay.com Vishay Semiconductors Single Phase Bridge Rectifier, 25 A, 35 A FEATURES • Universal, 3 way terminals: push-on, wrap around, or solder • High thermal conductivity package, electrically insulated case • Center hole fixing • Excellent power/volume ratio • UL E300359 approved • Nickel plated terminals solderable using lead (Pb)-free solder; solder alloy Sn/Ag/Cu (SAC305); solder temperature 260 °C to 275 °C • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D-34 PRIMARY CHARACTERISTICS DESCRIPTION IO 25 A, 35 A VRRM 200 V to 1200 V Package D-34 Circuit configuration Single phase bridge A range of extremely compact, encapsulated single phase bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and instrumentation applications. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IO IFSM I2t VRRM CHARACTERISTICS VALUES 26MB..A VALUES 36MB..A UNITS 25 35 A TC 65 60 °C 50 Hz 400 475 60 Hz 420 500 50 Hz 790 1130 60 Hz 725 1030 Range TJ A A2s 200 to 1200 V -55 to +150 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER 26MB..A, 36MB..A VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 05 50 75 06 60 100 10 100 150 20 200 275 40 400 500 60 600 725 80 800 900 100 1000 1100 120 1200 1300 IRRM MAXIMUM AT TJ MAXIMUM 2 Revision: 15-Jan-2019 Document Number: 93563 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MB Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER VALUES 26MB..A VALUES 36MB..A Resistive or inductive load 25 35 Capacitive load 20 28 65 60 t = 10 ms 400 475 SYMBOL Maximum DC output current at case temperature IO Maximum peak, one-cycle non-repetitive forward current TEST CONDITIONS t = 8.3 ms IFSM t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing t = 8.3 ms I2t t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t No voltage reapplied 100 % VRRM reapplied No voltage reapplied Initial  TJ = TJ maximum 100 % VRRM reapplied 420 500 335 400 350 420 790 1130 725 1030 560 800 512 730 I2t for time tx = I2xx0.1  tx  10 ms, VRRM = 0 V 5.6 11.3 Low level value of threshold voltage VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum 0.76 0.79 High level value of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ maximum 0.92 0.96 Low level forward slope resistance rt1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum 6.8 5.8 High level forward slope resistance rt2 (I >  x IF(AV)), TJ maximum 5.0 4.5 1.11 1.14 Maximum forward voltage drop VFM TJ = 25 °C, tp = 400 μs, IFM = 40 Apk (26MB),  IFM = 55 Apk (36MB) Maximum DC reverse current IRRM TJ = 25 °C, per diode at VRRM RMS isolation voltage base plate VINS f = 50 Hz, t = 1 s UNITS A °C A A2s kA2s V m V 10 μA 2700 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction and storage temperature range VALUES 26MB-A TEST CONDITIONS TJ, TStg Maximum thermal resistance junction to case per bridge RthJC Maximum thermal resistance,  case to heatsink RthCS -55 to 150 1.7 UNITS °C 1.2 K/W Mounting surface, smooth, flat, and greased 0.2 20 g Bridge to heatsink 2.0 Nm Approximate weight Mounting torque ± 10 % 1000 150 Instantaneous Forward Current (A) Maximum Allowable Case temperature (°C) VALUES 36MB-A 26MB..A Series 130 110 180° (Rect) 90 180° (Sine) 70 50 0 5 10 15 20 25 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 30 Tj = 25 °C Tj = 150 °C 100 10 26MB..A Series 1 0.5 1 1.5 2 2.5 3 3.5 Instantaneous Forward Voltage (V) Fig. 2 - Forward Voltage Drop Characteristics Maximum Allowable Ambient Temperature Revision: 15-Jan-2019 Document Number: 93563 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MB Series Vishay Semiconductors 50 26MB..A Series TJ = 150 °C 180° (Sine) = 3K /W 4K /W 5K /W R 20 -Δ 180° (Rect) 30 K/ W W K/ 2 1 40 A hS Rt Maximum Average Forward Power Loss (W) www.vishay.com 7 K/W 10 10 K /W 0 0 5 10 15 20 Average Forward Current (A) 25 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) 400 At Any Rated Load Condition And With Rated VRRM Applied Following Surge Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 350 300 250 200 150 26MB..A Series 100 1 10 100 Maximum Allowable Case temperature (°C) Peak Half Sine Wave Forward Current (A) Fig. 3 - Total Power Loss Characteristics 150 36MB..A Series 130 110 180° (Rect) 90 180° (Sine) 70 50 0 Number of Equal Amplitude Half Cycle Current Pulses (N) 150 26MB..A Series 0.1 20 25 30 35 40 1000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 150 °C No Voltage Reapplied Rated VRRM Reapplied 250 50 0.01 15 Fig. 6 - Current Ratings Characteristics Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) 350 10 Average Forward Current (A) Fig. 4 - Maximum Non-Repetitive Surge Current 450 5 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current TJ = 25 °C TJ = 150 °C 100 10 36MB..A Series 1 0.5 1 1.5 2 2.5 3 3.5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Revision: 15-Jan-2019 Document Number: 93563 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MB Series Maximum Average Forward Power Loss (W) www.vishay.com Vishay Semiconductors 80 36MB..A Series TJ = 150 °C Rt hS A 180° (Sine) 60 180° (Rect) 40 = 1K /W 0. 7 K/ W 2K /W -D elt a R 3K /W 4 K/W 5 K/W 20 7 K/W 0 0 5 10 15 20 25 30 Average Forward Current (A) 35 25 50 75 100 125 15 0 Maximum Allowable Ambient Temperature (°C) 450 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 8 - Total Power Loss Characteristics At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 400 350 300 250 200 150 36MB..A Series 100 1 10 100 500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 150 °C No Voltage Reapplied Rated VRRM Reapplied 450 400 350 300 250 200 150 36MB..A Series 100 0.01 Number of Equal Amplitude Half Cycle Current Pulses (N) 0.1 1 Pulse Train Duration (s) Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current ORDERING INFORMATION TABLE Device code VS- 36 MB 120 A 1 2 3 4 5 1 - Vishay Semiconductors product 2 - Current rating code 3 - Circuit configuration: 26 = 25 A (average) 36 = 35 A (average) MB = Single phase european coding 4 - Voltage code x 10 = VRRM 5 - Diode bridge rectifier: A = 26 MB, 36 MB series Revision: 15-Jan-2019 Document Number: 93563 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MB Series www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION AC (+) AC (-) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95326 Revision: 15-Jan-2019 Document Number: 93563 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D-34 DIMENSIONS in millimeters (inches) 0.8 ± 0.05 (0.03 ± 0.002) 6.35 ± 0.1 (0.25 ± 0.004) 10.5 ± 0.15 (0.41 ± 0.006) 20.3 ± 0.15 (0.80 ± 0.006) - ~ 21.5 + 1.0 - 0.5 + 0.039 (0.85 ) - 0.020 28.5 ± 0.15 (1.12 ± 0.006) 9.5 ± 0.5 (0.37 ± 0.020) 12.7 ± 0.1 (0.5 ± 0.004) + ~ 5.25 ± 0.15 (0.21 ± 0.006) 12.7 ± 0.1 (0.5 ± 0.004) 28.5 ± 0.15 (1.12 ± 0.006) Not to scale Suggested plugging force: 200 N max; axially applied to fast-on terminals Document Number: 95326 Revision: 07-Jul-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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