2KBP08M-E4/72

2KBPxxM-E4, 3N25x-E4 www.vishay.com Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • UL recognition file number E54214 • Ideal for printed circuit board • High surge current capability • High case dielectric strength − • Solder dip 275 °C max. 10 s, per JESD 22-B106 ~ ~ + ~ ~ • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 − + Case Style KBPM TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances, office equipment, and telecommunication applications. PRIMARY CHARACTERISTICS Package KBPM IF(AV) 2.0 A VRRM 50 V to 1000 V IFSM 60 A IR 5 μA VF at IF = 3.14 A 1.1 V TJ max. 165 °C Diode variations In-line MECHANICAL DATA Case: KBPM Molding compound meets UL 94 V-0 flammability rating Base P/N-E4 - RoHS-compliant, commercial grade Terminals: Silver plated J-STD-002 and JESD22-B102 leads, solderable per Polarity: As marked on body MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL 2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M 3N253 3N254 3N255 3N256 3N257 3N258 3N259 UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward output rectified current at TA = 55 °C IF(AV) 2.0 A Peak forward surge current single half sine-wave superimposed on rated load IFSM 60 A I2t 15 A2s TJ, TSTG -55 to +165 °C Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum instantaneous forward voltage drop per diode VF Maximum DC reverse current at rated DC blocking voltage per diode IR Typical junction capacitance per diode TJ 2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M TEST UNIT CONDITIONS 3N253 3N254 3N255 3N256 3N257 3N258 3N259 3.14 A 1.1 TA = 25 °C 5.0 TA = 125 °C 500 4.0 V,  1 MHz 25 V μA pF Revision: 05-Aug-15 Document Number: 88532 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2KBPxxM-E4, 3N25x-E4 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance 2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M 3N253 3N254 3N255 3N256 3N257 3N258 3N259 RJA (1) 30 RJL (1) 11 UNIT °C/W Note (1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with, 0.47" x 0.47" (12 mm x 12 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 2KBP06M-E4/51 1.895 51 600 Anti-static PVC tray 3N257-E4/51 1.895 51 600 Anti-static PVC tray RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 60 Hz Resistive or Inductive Load 1.5 PCB Mounted with 0.47 x 0.47" (12 x 12 mm) Copper Pads 1.0 Capacitive Load 0.5 I(pk) = 5.0 10 I(AV) (Per Leg) 20 Instantaneous Forward Current (A) Average Forward Output Current (A) 2.0 0 20 40 60 100 80 120 140 10 1 0.01 160 170 0 Ambient Temperature (°C) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Instantaneous Forward Voltage (V) Fig. 3 - Typical Forward Characteristics Per Diode Fig. 1 - Derating Curve Output Rectified Current 60 100 TJ = 150 °C Single Sine-Wave Instantaneous Reverse Current (µA) Peak Forward Surge Current (A) TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 0.1 50 40 30 20 10 1.0 Cycle 0 TJ = 125 °C 10 TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 1 10 100 0 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward SurgeCurrent Per Diode Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Revision: 05-Aug-15 Document Number: 88532 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2KBPxxM-E4, 3N25x-E4 www.vishay.com Vishay General Semiconductor Junction Capacitance (pF) 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.1 1 100 10 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style KBPM 0.600 (15.24) 0.560 (14.22) 0.125 x 45° (3.2) 0.460 (11.68) 0.500 (12.70) 0.420 (10.67) 0.460 (11.68) 0.60 (15.2) MIN. 0.034 (0.86) 0.028 (0.76) DIA. 0.200 (5.08) 0.180 (4.57) 0.50 (12.7) MIN. 0.060 (1.52) 0.160 (4.1) 0.140 (3.6) 0.105 (2.67) 0.085 (2.16) Polarity shown on front side of case: positive lead by beveled corner Revision: 05-Aug-15 Document Number: 88532 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000