2N4416/2N4416A/SST4416
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS)
IDSS Min (mA)
2N4416
−v6
−30
4.5
5
2N4416A
−2.5 to −6
−35
4.5
5
SST4416
−v6
−30
4.5
5
FEATURES
BENEFITS
D Excellent High-Frequency Gain:
2N4416/A, Gps 13 dB (typ) @
400 MHz
D Very Low Noise: 3 dB (typ) @
400 MHz
D Very Low Distortion
D High AC/DC Switch Off-Isolation
D
D
D
D
D
APPLICATIONS
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
D
D
D
D
High-Frequency Amplifier/Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
DESCRIPTION
The 2N4416/2N4416A/SST4416 n-channel JFETs are
designed to provide high-performance amplification at high
frequencies.
The TO-206AF (TO-72) hermetically-sealed package is
available with full military processing (see Military
Information.) The TO-236 (SOT-23) package provides a
low-cost option and is available with tape-and-reel options
(see Packaging Information). For similar products in the
TO-226AA (TO-92) package, see the J304/305 data sheet.
TO-206AF
(TO-72)
TO-236
(SOT-23)
S
C
1
4
D
1
3
S
2
G
2
3
D
G
Top View
2N4416
2N4416A
Top View
SST4416 (H1)*
*Marking Code for TO-236
For applications information see AN104.
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
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2N4416/2N4416A/SST4416
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage :
(2N/SST4416) . . . . . . . . . . . . . . . . . . . . . −30 V
(2N4416A) . . . . . . . . . . . . . . . . . . . . . . . . . −35 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C
Storage Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . −65 to 200 _C
(SST Prefix) . . . . . . . . . . . . . . . . . −65 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150 _C
(2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW
(SST Prefix)b . . . . . . . . . . . . . . . . . . . . 350 mW
Power Dissipation :
Notes
a. Derate 2.4 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TA = 25_C UNLESS NOTED)
Limits
2N4416
Parameter
2N4416A
SST4416
Symbol
Test Conditions
Typa
Min
V(BR)GSS
IG = −1 mA , VDS = 0 V
−36
−30
VGS(off)
VDS = 15 V, ID = 1 nA
−3
VDS = 15 V, VGS = 0 V
10
VGS = −20 V, VDS = 0 V (2N)
−2
−100
−100
−4
−100
−100
Max
Min
−6
−2.5
15
5
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
IDSS
IGSS
TA = 150_C
VGS = −15 V, VDS = 0 V (SST)
TA = 125_C
Gate Operating Current
5
−35
−30
−6
V
−6
15
5
15
mA
pA
−0.002
−1
nA
−0.6
IG
VDG = 10 V, ID = 1 mA
−20
ID(off)
VDS = 10 V, VGS = −6 V
2
Drain-Source On-Resistancec
rDS(on)
VGS = 0 V, ID = 300 mA
150
W
Gate-Source
Forward Voltagec
VGS(F)
IG = 1 mA , VDS = 0 V
0.7
V
Drain Cutoff Currentc
pA
Dynamic
Common-Source
Forward Transconductanceb
gfs
Common-Source
Output Conductanceb
gos
Common-Source
Input Capacitance
Ciss
Common-Source
Reverse Transfer Capacitance
Crss
Common-Source
Output Capacitance
Coss
Equivalent Input
Noise Voltagec
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2
en
VDS = 15 V, VGS = 0 V
f = 1 kHz
VDS = 15 V, VGS = 0 V
f = 1 MHz
VDS = 10 V, VGS = 0 V
f = 1 kHz
6
4.5
7.5
4.5
7.5
15
50
50
2.2
4
4
0.7
0.8
0.8
1
2
2
6
4.5
7.5
mS
50
mS
pF
nV⁄
√Hz
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
2N4416/2N4416A/SST4416
Vishay Siliconix
HIGH-FREQUENCY SPECIFICATIONS FOR 2N4416/2N4416A (TA = 25_C UNLESS NOTED)
Limits
100 MHz
Parameter
Symbol
Min
Test Conditions
400 MHz
Max
Min
Max
Unit
Common Source Input Conductanced
giss
100
1,000
Common Source Input Susceptanced
biss
2,500
10,000
Common Source Output Conductanced
goss
Common Source Output Susceptanced
boss
Common Source Forward Transconductanced
gfs
Common-Source Power Gaind
Gps
Noise Figured
NF
VDS = 15 V, VGS = 0 V
75
100
1,000
4,000
mS
m
4,000
VDS = 15 V, ID = 5 mA
18
10
2
RG = 1 kW
dB
4
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. This parameter not registered with JEDEC.
d. Not a production test.
NH
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
10
6
gfs
12
4
8
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
4
0
2
rDS(on) − Drain-Source On-Resistance ( Ω )
8
0
0
−2
−4
−6
−8
VGS(off) − Gate-Source Cutoff Voltage (V)
rDS @ ID = 300 mA, VGS = 0 V
60
gos
200
40
100
20
0
0
−2
−4
−6
−8
VGS(off) − Gate-Source Cutoff Voltage (V)
Output Characteristics
−10
Output Characteristics
10
15
VGS(off) = −2 V
VGS(off) = −3 V
8
12
VGS = 0 V
ID − Drain Current (mA)
ID − Drain Current (mA)
80
rDS
300
0
−10
gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz
400
gos − Output conductance (µS)
IDSS
100
500
gfs − Forward Transconductance (mS)
IDSS − Saturation Drain Current (mA)
20
16
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
−0.2 V
6
−0.4 V
4
−0.6 V
−0.8 V
−1.0 V
−1.2 V
2
VGS = 0 V
−0.3 V
9
−0.6 V
−0.9 V
6
−1.2 V
−1.5 V
3
−1.8 V
0
0
−1.4 V
2
4
6
8
VDS − Drain-Source Voltage (V)
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
10
0
0
2
4
6
8
VDS − Drain-Source Voltage (V)
10
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2N4416/2N4416A/SST4416
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
5
Output Characteristics
5
VGS(off) = −2 V
VGS = 0 V
4
−0.2 V
ID − Drain Current (mA)
ID − Drain Current (mA)
4
−0.4 V
3
−0.6 V
−0.8 V
2
−1.0 V
1
VGS = 0 V
VGS(off) = −3 V
−0.3 V
−0.6 V
3
−1.2 V
−0.9 V
−1.5 V
2
−1.8 V
1
−1.2 V
−2.1 V
−1.4 V
0
0
0
0.2
0.4
0.6
0.8
0
1.0
0.2
VDS − Drain-Source Voltage (V)
VDS = 10 V
VGS(off) = −3 V
8
1.0
VDS = 10 V
8
TA = −55_C
ID − Drain Current (mA)
ID − Drain Current (mA)
0.8
10
VGS(off) = −2 V
25_C
6
125_C
4
2
TA = −55_C
25_C
6
4
125_C
2
0
0
0
−0.4
−0.8
−1.2
−1.6
0
−2
−0.6
−1.2
−1.8
−2.4
−3
VGS − Gate-Source Voltage (V)
VGS − Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
Transconductance vs. Gate-Source Voltgage
10
10
VGS(off) = −2 V
VGS(off) = −3 V
VDS = 10 V
f = 1 kHz
8
gfs − Forward Transconductance (mS)
gfs − Forward Transconductance (mS)
0.6
Transfer Characteristics
Transfer Characteristics
10
TA = −55_C
6
25_C
4
125_C
2
0
VDS = 10 V
f = 1 kHz
8
TA = −55_C
6
25_C
4
125_C
2
0
0
−0.4
−0.8
−1.2
−1.6
VGS − Gate-Source Voltage (V)
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4
0.4
VDS − Drain-Source Voltage (V)
−2
0
−0.6
−1.2
−1.8
−2.4
−3
VGS − Gate-Source Voltage (V)
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
2N4416/2N4416A/SST4416
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance vs. Drain Current
Circuit Voltage Gain vs. Drain Current
100
g fs R L
AV + 1 ) R g
L os
TA = 25_C
240
80
VGS(off) = −2 V
AV − Voltage Gain
rDS(on) − Drain-Source On-Resistance ( Ω )
300
180
−3 V
120
60
Assume VDD = 15 V, VDS = 5 V
RL +
60
40
VGS(off) = −2 V
20
−3 V
0
0.1
ID − Drain Current
(mA)
1
0
10
ID − Drain Current
(mA)
1
0.1
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
3
5
Crss − Reverse Feedback Capacitance (pF)
f = 1 MHz
4
Ciss − Input Capacitance (pF)
10 V
ID
3
VDS = 0 V
2
10 V
1
0
0
100
−4
−8
−12
−16
VGS − Gate-Source Voltage (V)
f = 1 MHz
2.4
1.8
VDS = 0 V
1.2
10 V
0.6
0
0
−20
Input Admittance
100
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
−4
−8
−12
−16
VGS − Gate-Source Voltage (V)
−20
Forward Admittance
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
bis
10
10
gfs
(mS)
(mS)
gis
1
0.1
100
−bfs
1
200
500
f − Frequency (MHz)
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
1000
0.1
100
200
500
1000
f − Frequency (MHz)
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2N4416/2N4416A/SST4416
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Reverse Admittance
Output Admittance
10
10
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
bos
−brs
1
gos
(mS)
(mS)
1
−grs
0.1
0.1
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
0.01
100
0.01
1000
200
500
f − Frequency (MHz)
Gate Leakage Current
100 nA
VGS(off) = −3 V
gfs − Forward Transconductance (mS)
1 mA
0.1 mA
TA = 125_C
1 nA
IGSS
@
125_C
100 pA
5 mA
10 pA
1 mA
0.1 mA
TA = 25_C
1 pA
IGSS @ 25_C
0.1 pA
8
TA = −55_C
6
25_C
4
125_C
2
4
8
12
16
VDG − Drain-Gate Voltage (V)
0.1
20
Equivalent Input Noise Voltage vs. Frequency
VGS(off) = −3 V
gos − Output Conductance (µS)
Hz
16
12
8
ID = 5 mA
4
1
ID − Drain Current (mA)
10
Output Conductance vs. Drain Current
20
VDS = 10 V
en − Noise Voltage nV /
VDS = 10 V
f = 1 kHz
0
0
20
1000
200
500
f − Frequency (MHz)
Common-Source Forward
Transconductance vs. Drain Current
10
IG @ ID = 5 mA
10 nA
IG − Gate Leakage
100
VDS = 10 V
f = 1 kHz
16
TA = −55_C
12
25_C
8
125_C
4
VGS = 0 V
0
0
10
100
1k
f − Frequency (Hz)
10 k
100 k
0.1
1
ID − Drain Current (mA)
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70242.
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Document Number: 70242
S-50147—Rev. H, 24-Jan-05
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Document Number: 91000
Revision: 18-Jul-08
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