2N7002-E3

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 60 VQ1000J FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Low On-Resistance: 2.5 W Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-226AA (TO-92) S TO-236 (SOT-23) 1 G G 1 3 2 S D D 2 3 Top View Top View Marking Code: 72wll 2N7000 72 = Part Number Code for 2N7002 w = Week Code ll = Lot Traceability Dual-In-Line N D1 1 14 D4 S1 2 13 S4 G1 3 12 G4 4 11 G2 5 10 G3 S2 6 9 S3 D2 7 8 D3 NC N Top View Plastic: VQ1000J Sidebraze: VQ1000P Document Number: 70226 S-04279—Rev. F, 16-Jul-01 N NC TO-92-18RM (TO-18 Lead Form) D 1 G 2 N S 3 Top View BS170 www.vishay.com 11-1 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Single Parameter Drain-Source Voltage Gate-Source Voltage—Non-Repetitive Gate-Source Voltage—Continuous Continuous Drain Current (TJ = 150_C) TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation Symbol 2N7000 2N7002 VQ1000J VQ1000P VDS 60 60 60 60 VGSM "40 "40 "30 VGS "20 "20 "20 "20 ID IDM TA= 25_C TA= 100_C Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Total Quad PD RthJA VQ1000J/P BS170 "25 V "20 0.2 0.115 0.225 0.225 0.5 0.13 0.073 0.14 0.14 0.175 0.5 0.8 1 1 0.4 0.2 1.3 1.3 2 0.16 0.08 0.52 0.52 0.8 312.5 625 96 96 62.5 TJ, Tstg Unit 60 A 0.83 W 156 _C/W _C –55 to 150 Notes a. Pulse width limited by maximum junction temperature. b. tp v 50 ms. SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N7000 Parameter Symbol Test Conditions Typa Min Max 2N7002 Min Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 10 mA 70 60 VDS = VGS, ID = 1 mA 2.1 0.8 VDS = VGS, ID = 0.25 mA 2.0 IDSS V 1 VDS = 0 V, VGS = "15 V "100 Drain-Source On-Resistanceb ID(on) rDS(on) VDS = 60 V, VGS = 0 V 1 0.35 VDS = 7.5 V, VGS = 10 V 1 VGS = 4.5 V, ID = 0.075 A 4.5 VGS = 5 V, ID = 0.05 A 3.2 7.5 5.8 13.5 VGS = 10 V, ID = 0.5 A TJ = 125_C Forward Transconductanceb gfs VDS = 10 V, ID = 0.2 A Common Source Output Conductanceb gos VDS = 5 V, ID = 0.05 A m mA 500 VDS = 10 V, VGS = 4.5 V TC = 125_C nA 1 1000 TC = 125_C TC = 125_C On-State Drain Currentb 2.5 "10 VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V Zero Gate Voltage Drain Current 60 3 0.075 A 0.5 5.3 2.4 5 4.4 9 100 W 7.5 13.5 80 mS 0.5 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss www.vishay.com 11-2 VDS = 25 V, VGS = 0 V f = 1 MHz 22 60 50 11 25 25 2 5 5 pF Document Number: 70226 S-04279—Rev. F, 16-Jul-01 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N7000 2N7002 Symbol Test Conditions Typa Turn-On Time tON 10 tOFF VDD = 15 V, RL = 25 W ID ^0.5 A, VGEN = 10 V, RG = 25 W 7 Turn-Off Time 7 10 Turn-On Time tON 7 20 Turn-Off Time tOFF VDD = 30 V, RL = 150 W ID ^ 0.2 A, VGEN = 10 V, RG = 25 W 11 20 Parameter Min Max Min Max Unit Switchingd ns SPECIFICATIONSĊVQ1000J/P AND BS170 (TA = 25_C UNLESS OTHERWISE NOTED) Limits VQ1000J/P Parameter Typa Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = 100 mA 70 60 VGS(th) VDS = VGS, ID = 1 mA 2.1 0.8 BS170 Max Min 2.5 0.8 Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage VDS = 0 V, VGS = "10 V Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-Resistanceb IDSS VDS = 25 V, VGS = 0 V 0.5 500 10 VDS = 10 V, VGS = 10 V 1 VGS = 5 V, ID = 0.2 A 4 VGS = 10 V, ID = 0.2 A 2.3 VGS = 10 V, ID = 0.3 A 2.3 5.5 4.2 7.6 TJ = 125_C gfs Common Source Output Conductanceb gos mA m 0.5 A 7.5 5 VDS = 10 V, ID = 0.2 A W 100 VDS = 10 V, ID = 0.5 A VDS =5 V, ID = 0.05 A V nA "10 VDS = 60 V, VGS = 0 V rDS(on) Forward Transconductanceb "500 VDS = 0 V, VGS = "15 V VDS = 48 V, VGS = 0 V, TJ = 125_C ID(on) 3 "100 TJ = 125_C IGSS 60 100 mS 0.5 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 22 60 11 25 2 5 VDD = 15 V, RL = 23 W ID ^ 0.6 A, VGEN = 10 V, RG = 25 W 7 10 7 10 VDD = 25 V, RL = 125 W ID ^ 0.2 A, VGEN = 10 V, RG = 25 W 7 10 7 10 VDS =25 V, VGS = 0 V f = 1 MHz 60 pF Switchingd Turn-On Time tON Turn-Off Time tOFF Turn-On Time tON Turn-Off Time tOFF Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v80 ms duty cycle v1%. c. This parameter not registered with JEDEC. d. Switching time is essentially independent of operating temperature. Document Number: 70226 S-04279—Rev. F, 16-Jul-01 ns VNBF06 www.vishay.com 11-3 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Transfer Characteristics 1.0 1.0 6.5 V VGS = 10, 9, 8, 7 V 0.8 0.8 6V ID – Drain Current (A) ID – Drain Current (A) TJ = –55_C 5.5 V 0.6 5V 0.4 4.5 V 4V 0.2 3.5 V 3V 0 1 2 3 4 5 125_C 0.4 0.2 2.5 V 2, 1 V 0.0 25_C 0.6 0.0 6 0 1 2 VDS – Drain-to-Source Voltage (V) 3 5 6 7 8 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 7 60 VGS = 0 V f = 1 MHz 6 50 rDS @ 5 V = VGS 5 C – Capacitance (pF) rDS(on) – On-Resistance ( Ω ) 4 4 3 rDS @ 10 V = VGS 2 40 30 Ciss 20 Coss 10 1 Crss 0 0.0 0 0.2 0.4 0.6 0.8 0 1.0 5 ID – Drain Current (A) 15 20 25 30 35 VDS – Drain-to-Source Voltage (V) Gate Charge 20 10 2.0 On-Resistance vs. Junction Temperature 12 VDS = 30 V 8 4 0 0 400 800 1200 1600 Qg – Total Gate Charge (pC) www.vishay.com 11-4 VGS = 10 V, rDS @ 0.5 A 16 rDS(on) – On-Resistance ( Ω ) (Normalized) VGS – Gate-to-Source Voltage (V) ID = 0.5 A 2000 2400 1.5 1.0 VGS = 5 V, rDS @ 0.05 A 0.5 0.0 –55 –30 –5 20 45 70 95 120 145 TJ – Junction Temperature (_C) Document Number: 70226 S-04279—Rev. F, 16-Jul-01 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.000 rDS(on) – On-Resistance ( Ω ) 6 IS – Source Current (A) TJ = 125_C 0.100 TJ = 25_C 0.010 5 ID = 50 mA 4 500 mA 3 2 1 0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 VSD – Source-to-Drain Voltage (V) 4 6 8 10 12 14 16 18 20 VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.50 ID = 250 mA VGS(th) – Variance (V) 0.25 –0.00 –0.25 –0.50 –0.75 –50 –25 0 25 50 75 100 125 150 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = 0.01 t1 t2 2. Per Unit Base = RthJA = 156_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) Document Number: 70226 S-04279—Rev. F, 16-Jul-01 www.vishay.com 11-5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. 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Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PADs for PowerPAK® 8 x 8L Single 8.00 (0.31) 0.50 (0.02) 4.05 (0.16) 3.55 (0.14) Y 3.99 (0.16) 4.59 (0.18) 6.90 (0.27) (0, 0) 0.44 (0.02) X 0.54 (0.02) 0.85 (0.03) 6.11 (0.24) 1.29 (0.05) 1.94 (0.08) 8.25 (0.32) 3.23 (0.13) 0.82 (0.03) 2.47 (0.10) 3.62 (0.14) 4.05 (0.16) 2.03 (0.08) 1.15 (0.05) 0.88 (0.03) Dimensions in millimeters (inches) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 08-Apr-15 1 Document Number: 67477 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2024 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Document Number: 91000 1 For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Jan-2024