2N7002E-T1-E3

2N7002E Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage • Compliant to RoHS Directive 2002/95/EC BENEFITS TO-236 (SOT-23) G 1 S 2 Marking Code: 7E 3 • • • • • Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage D APPLICATIONS Top View Ordering Information: 2N7002E-T1-E3 (Lead (Pb)-free) 2N7002E-T1-GE3 (Lead (Pb)-free and Halogen-free) • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. • Battery Operated Systems • Solid-State Relays ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) Pulsed Drain TA = 25 °C TA = 70 °C Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range ID IDM TA = 25 °C TA = 70 °C PD Unit V 240 190 mA 1300 0.35 0.22 W RthJA 357 °C/W TJ, Tstg - 55 to 150 °C Notes: a. Pulse width limited by maximum junction temperature. Document Number: 70860 S11-0183-Rev. F, 07-Feb-11 www.vishay.com 1 2N7002E Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Limits Symbol Test Conditions Min. Typ.a VDS VGS = 0 V, ID = 10 µA 60 68 VGS(th) VDS = VGS, ID = 250 µA 1 2 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 15 V Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Parameter Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistanceb Forward Transconductanceb Diode Forward Voltage 2.5 ± 10 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V , TJ = 125 °C 500 VGS = 10 V, VDS = 7.5 V 800 1300 VGS = 4.5 V, VDS = 10 V 500 700 nA µA mA VGS = 10 V, ID = 250 mA 1.2 3 VGS = 4.5 V, ID = 200 mA 1.8 4 gfs VDS = 15 V, ID = 200 mA 600 VSD IS = 200 mA, VGS = 0 V 0.85 1.2 0.4 0.6 VDS = 10 V, VGS = 4.5 V ID  250 mA 0.06 RDS(on) V  mS V a Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss nC 0.06 21 VDS = 5 V, VGS = 0 V, f = 1 MHz pF 7 2.5 Switchinga, c Turn-On Time td(on) Turn-Off Time td(off) VDD = 10 V, RL = 40  ID  250 mA, VGEN = 10 V, Rg = 10  13 20 18 25 ns Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: pulse width  300 µs duty cycle  2 %. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70860 S11-0183-Rev. F, 07-Feb-11 2N7002E Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.2 1.0 VGS = 10 V, 9 V, 8 V, 7 V, 6 V 0.8 TJ = - 55 °C 5V 0.6 ID - Drain Current (A) ID - Drain Current (A) 0.9 4V 0.4 25 °C 125 °C 0.6 0.3 0.2 3V 0.0 0.0 0 1 2 3 4 0 5 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 7 3.5 4 3 RDS(on) - On-Resistance (Ω) RDS(on) - On-Resistance (Ω) 3.0 ID at 250 mA 2 ID at 75 mA 1 2.5 VGS = 4.5 V 2.0 VGS = 10 V 1.5 1.0 0.5 0.0 0 0 2 4 6 8 0.0 10 0.2 0.4 VGS - Gate-to-Source Voltage (V) 0.4 VGS = 10 V at 250 mA 0.2 1.6 ID = 250 µA 1.2 VGS(th) - Variance (V) (Normalized) 1.0 On-Resistance vs. Drain Current 2.0 RDS(on) - On-Resistance 0.8 ID - Drain Current (A) On-Resistance vs. Gate-Source Voltage VGS = 4.5 V at 200 mA 0.8 0.4 0.0 - 50 0.6 0 - 0.2 - 0.4 - 0.6 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 70860 S11-0183-Rev. F, 07-Feb-11 - 0.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature www.vishay.com 3 2N7002E Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 VGS - Gate-to-Source Voltage (V) 40 C - Capacitance (pF) 32 Ciss 24 16 Coss 8 VDS = 30 V ID = 0.25 A 0.8 0.6 0.4 0.2 Crss 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 Qg - Total Gate Charge (nC) Capacitance Gate Charge 2 IS - Source Current (A) 1 TJ = 85 °C 25 °C - 55 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70860. www.vishay.com 4 Document Number: 70860 S11-0183-Rev. F, 07-Feb-11 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000