2N7002K-T1-E3

2N7002K www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES SOT-23 (TO-236) • • • • • • • • D 3 2 S 1 G Top View Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details Marking code: 7K PRODUCT SUMMARY BENEFITS VDS (V) 60 RDS(on) max. () at VGS = 10 V 2 Qg typ. (nC) ID (A) Configuration Low on-resistance: 2  Low threshold: 2 V (typ.) Available Low input capacitance: 25 pF Available Fast switching speed: 25 ns Low input and output leakage Available TrenchFET® power MOSFET 2000 V ESD protection Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 0.4 0.3 Single • • • • • Low offset voltage Low voltage operation Easily driven without buffer High speed circuits Low error voltage APPLICATIONS D • Direct logic-level interface: TTL/CMOS • Drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc. G • Battery operated systems • Solid state relays S N-Channel MOSFET ORDERING INFORMATION Package SOT-23 Lead (Pb)-free 2N7002K-T1-E3 Lead (Pb)-free and halogen-free 2N7002K-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 60 Gate-source voltage VGS ± 20 Continuous drain current (TJ = 150 °C) b TA = 25 °C TA = 100 °C Pulsed drain current a Power dissipation b Maximum junction-to-ambient b Operating junction and storage temperature range ID IDM TA = 25 °C TA = 100 °C PD UNIT V 0.3 0.19 A 0.8 0.35 0.14 W RthJA 350 °C/W TJ, Tstg -55 to +150 °C Notes a. Pulse width limited by maximum junction temperature b. Surface mounted on FR4 board S17-1299-Rev. F, 21-Aug-17 Document Number: 71333 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2N7002K www.vishay.com Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) PARAMETER TEST CONDITIONS MIN. TYP. a VDS VGS = 0 V, ID = 10 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 1 - 2.5 SYMBOL MAX. UNIT Static Drain-source breakdown voltage Gate-threshold voltage Gate-body leakage IGSS Zero gate voltage drain current IDSS On-state drain current b ID(on) Drain-source on-resistance b RDS(on) VDS = 0 V, VGS = ± 20 V - - ± 10 VDS = 0 V, VGS = ± 15 V - - 1 VDS = 0 V, VGS = ± 10 V - - ± 150 VDS = 0 V, VGS = ± 10 V, TJ = 85 °C - - ± 1000 VDS = 0 V, VGS = ± 5 V - - ± 100 VDS = 60 V, VGS = 0 V - - 1 VDS = 60 V, VGS = 0 V, TJ = 125 °C - - 500 VGS = 10 V, VDS = 7.5 V 800 - - VGS = 4.5 V, VDS = 10 V 500 - - VGS = 10 V, ID = 500 mA - - 2 VGS = 4.5 V, ID = 200 mA - - 4 V μA nA μA mA  Forward transconductance b gfs VDS = 10 V, ID = 200 mA 100 - - mS Diode forward voltage VSD IS = 200 mA, VGS = 0 V - - 1.3 V Total gate charge Qg VDS = 10 V, VGS = 4.5 V ID  250 mA - 0.4 0.6 nC Input capacitance Ciss - 30 - Dynamic a, b Output capacitance Coss Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V f = 1 MHz - 6 - - 2.5 - - - 25 - - 35 pF Switching a, c Turn-on time td(on) Turn-off time td(off) VDD = 30 V, RL = 150  ID  200 mA, VGEN = 10 V, Rg = 10  ns Notes a. For DESIGN AID ONLY, not subject to production testing b. Pulse test: pulse width  300 μs duty cycle  2 % c. Switching time is essentially independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1299-Rev. F, 21-Aug-17 Document Number: 71333 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2N7002K www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 TJ = - 55 °C 0.8 5V I D - Drain Current (mA) I D - Drain Current (A) 1200 7V 6V VGS = 10 V 0.6 4V 0.4 900 25 °C 125 °C 600 300 0.2 3V 0.0 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 5 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Output Characteristics 4.0 40 VGS = 0 V 32 3.0 C - Capacitance (pF) R DS(on) - On-Resistance () 3.5 2.5 VGS = 4.5 V 2.0 1.5 VGS = 10 V Ciss 24 16 Coss 1.0 8 Crss 0.5 0.0 0 0 200 400 600 800 1000 0 5 ID - Drain Current (mA) 10 25 2.0 R DS(on) - On-Resistance (Normalized) VDS = 10 V ID = 250 mA 5 4 3 2 1 0 0.0 20 Capacitance 7 6 15 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 6 0.1 0.2 0.3 0.4 0.5 0.6 VGS = 10 V at 500 mA 1.6 1.2 VGS = 4.5 V at 200 mA 0.8 0.4 0.0 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S17-1299-Rev. F, 21-Aug-17 Document Number: 71333 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2N7002K www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 5 R DS(on) - On-Resistance () I S - Source Current (A) VGS = 0 V 100 TJ = 125 °C 10 TJ = 25 °C 4 3 ID = 200 mA ID = 500 mA 2 1 TJ = - 55 °C 1 0.0 0 0.3 0.6 0.9 1.2 1.5 0 2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-Source Voltage 0.4 3 2.5 0.2 2 0.0 Power (W) VGS(th) Variance (V) ID = 250 µA - 0.2 - 0.4 1 - 0.6 - 0.8 - 50 1.5 TA = 25 °C 0.5 0 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature S17-1299-Rev. F, 21-Aug-17 0.01 0.1 10 1 100 600 Time (s) Single Pulse Power, Junction-to-Ambient Document Number: 71333 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2N7002K www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 350 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71333. S17-1299-Rev. F, 21-Aug-17 Document Number: 71333 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000