3KASMC33AHE3_B/I

3KASMC10A thru 3KASMC43A www.vishay.com Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology Available • TJ = 185 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • 3000 W peak pulse power capability with a 10/1000 μs waveform SMC (DO-214AB) Cathode Anode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Available • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS VWM 10 V to 43 V VBR 11.1 V to 52.8 V PPPM 3000 W PD 6.0 W IFSM 200 A TJ max. 185 °C Polarity Unidirectional Package SMC (DO-214AB) TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. MECHANICAL DATA Case: SMC (DO-214AB) Molding compound meets UL 94 V-0 flammability rating Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 and HM3 suffix meet JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 3) PARAMETER PPPM 3000 W Peak power pulse current with a 10/1000 μs waveform (1) (fig. 1) IPPM See next table A Peak forward surge current 8.3 ms single half sine-wave (2) IFSM 200 A Power dissipation on infinite heatsink, TL = 75 °C (fig. 6) PD 6.0 W Maximum instantaneous forward voltage at 100 A (2) VF 3.5 V TJ, TSTG -65 to +185 °C Operating junction and storage temperature range Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2. A (2) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum Revision: 19-Apr-2021 Document Number: 88480 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 3KASMC10A thru 3KASMC43A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (1) (V) MIN. NOM. MAX. STAND-OFF TEST CURRENT VOLTAGE VWM IT (mA) (V) MAXIMUM REVERSE LEAKAGE AT VWM IR (μA) MAXIMUM MAXIMUM MAXIMUM REVERSE PEAK CLAMPING LEAKAGE PULSE VOLTAGE AT VWM SURGE AT IPPM CURRENT ID (μA) VC (V) TJ = 150 °C IPPM (A) (2) TYPICAL TEMP. COEFFICIENT OF VBR (3) αT (%/°C) 3KASMC10A 3AX 11.1 11.7 12.3 1.0 10 5.0 50 177 17.0 0.069 3KASMC11A 3AZ 12.2 12.9 13.5 1.0 11 5.0 50 165 18.2 0.072 3KASMC12A 3BE 13.3 14.0 14.7 1.0 12 2.0 20 151 19.9 0.074 3KASMC13A 3BG 14.4 15.2 15.9 1.0 13 2.0 20 140 21.5 0.076 3KASMC14A 3BK 15.6 16.4 17.2 1.0 14 1.0 10 129 23.2 0.078 3KASMC15A 3BM 16.7 17.6 18.5 1.0 15 1.0 10 123 24.4 0.080 3KASMC16A 3BP 17.8 18.8 19.7 1.0 16 1.0 10 115 26.0 0.081 3KASMC17A 3BR 18.9 19.9 20.9 1.0 17 1.0 10 109 27.6 0.082 3KASMC18A 3BT 20.0 21.1 22.1 1.0 18 1.0 10 103 29.2 0.083 3KASMC20A 3BV 22.2 23.4 24.5 1.0 20 1.0 10 92.6 32.4 0.085 3KASMC22A 3BX 24.4 25.7 26.9 1.0 22 1.0 10 84.5 35.5 0.086 3KASMC24A 3BZ 26.7 28.1 29.5 1.0 24 1.0 10 77.1 38.9 0.087 3KASMC26A 3CE 28.9 30.4 31.9 1.0 26 1.0 10 71.3 42.1 0.088 3KASMC28A 3CG 31.1 32.8 34.4 1.0 28 1.0 10 66.1 45.4 0.089 3KASMC30A 3CK 33.3 35.1 36.8 1.0 30 1.0 15 62.0 48.4 0.090 3KASMC33A 3CM 36.7 38.7 40.6 1.0 33 1.0 15 56.3 53.3 0.091 3KASMC36A 3CP 40.0 42.1 44.2 1.0 36 1.0 20 51.6 58.1 0.091 3KASMC40A 3CR 44.4 46.8 49.1 1.0 40 1.0 20 46.5 64.5 0.092 3KASMC43A 3CT 47.8 50.3 52.8 1.0 43 1.0 20 43.2 69.4 0.093 Notes (1) Pulse test: t ≤ 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) To calculate V BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25)) (4) All terms and symbols are consistent with ANSI/IEEE C62.35 THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to ambient air (1) Typical thermal resistance, junction to leads SYMBOL VALUE RθJA 77.5 RθJL 18.3 UNIT °C/ W Note Mounted on minimum recommended pad layout (1) ORDERING INFORMATION (Example) PREFERRED P/N 3KASMC10AHE3_B/H (1) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.211 H 850 7" diameter plastic tape and reel 3KASMC10AHE3_B/I (1) 0.211 I 3500 13" diameter plastic tape and reel 3KASMC10AHM3_B/H (1) 0.211 H 850 7" diameter plastic tape and reel 0.211 I 3500 13" diameter plastic tape and reel 3KASMC10AHM3_B/I (1) Note AEC-Q101 qualified (1) Revision: 19-Apr-2021 Document Number: 88480 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 3KASMC10A thru 3KASMC43A www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 000 CJ - Junction Capacitance (pF) PPPM - Peak Power (kW) 100 10 1 1000 Measured at Stand-Off Voltage TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 1 10 100 1000 10 10 000 20 30 40 50 td - Pulse Width (µs) VWM - Reverse Stand-off Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance 200 100 Peak Forward Surge Current (A) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 0.1 0.1 Measured at Zero Bias 75 50 25 TJ = TJ max. 8.3 ms Single Half Sine-Wave 100 50 10 0 50 0 100 150 1 200 5 10 50 100 TJ - Initial Temperature (°C) Number of Cycles at 60 Hz Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Maximum Non-Repetitive/Peak Forward Surge Current Peak Value IPPM 100 6 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs PD - Power Dissipation (W) IPPM - Peak Pulse Current, % IRSM 150 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. 60 Hz Resistive or Inductive Load 5 4 3 2 1 td 0 0 0 1.0 2.0 3.0 4.0 0 25 50 75 100 125 150 t - Time (ms) TL - Lead Temperature (°C) Fig. 3 - Pulse Waveform Fig. 6 - Power Derating Curve 175 200 Revision: 19-Apr-2021 Document Number: 88480 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 3KASMC10A thru 3KASMC43A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMC (DO-214AB) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 19-Apr-2021 Document Number: 88480 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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