3N164

3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR)DSS Min (V) VGS(th) (V) rDS(on) Max (
) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18 Features Benefits Applications
Ultra-High Input Impedance Amplifier
Ultra-Low Input Leakage: 0.02 pA Typ.
High Input Impedance Isolation
High Gate Breakdown Voltage:
125 V
Minimize Handling ESD Problems
Smoke Detectors
High Off Isolation without Power
Electrometers
Normally Off
Analog Switching
Digital Switching Description The 3N163/164 are lateral p-channel MOSFETs designed for analog switch and preamplifier applications where high speed and low parasitic capacitances are required. The hermetic TO-206AF package is compatible with military processing per military standards (see Military information). TO-206AF (TO-72) D S 1 4 2 3 Case Substrate G Top View Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted)                           –40                                                            
  Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA Lead Temperature (1/16” from case for 10 seconds) . . . . . . . . . 300C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200C Operating Junction Temperature . . . . . . . . . . . . . . . . . . –55 to 150C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375 mW Notes: a. Derate 3 mW/C above 25C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70228. Siliconix P-37404—Rev. D, 04-Jul-94 1 3N163/3N164     3N163      3N164              Drain-Source Breakdown Voltage V(BR)DSS ID = –10 mA, VDS = 0 V –70 –40 –30 Source-Drain Breakdown Voltage V(BR)SDS IS = –10 mA, VGD = VBD = 0 V –70 –40 –30 VGS(th) ID = –10 mA, VGS = VDS –2.5 –2 –5 –2 –5 VGS ID = –0.5 mA, VDS = –15 V –3.5 –3 –6.5 –2.5 –6.5 VGS = –40 V, VDS = 0 V