401CNQ045

VS-401CNQ...PbF Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 400 A FEATURES Lug terminal anode 1 • 175 °C TJ operation Lug terminal anode 2 • Center tap module • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability Base common cathode TO-244 • UL approved file E222165 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 400 A VR 40 V, 45 V DESCRIPTION / APPLICATIONS Package TO-244 Circuit configuration Two diodes common cathode The VS-401CNQ... center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, converters, freewheeling diodes, welding and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 400 A VRRM Range 40/45 V IFSM tp = 5 μs sine 25 000 A VF 200 Apk, TJ = 125 °C (per leg) TJ Range 0.56 V -55 to +175 °C VS-401CNQ040PbF VS-401CNQ045PbF UNITS 40 45 V VOLTAGE RATINGS PARAMETER SYMBOL VR Maximum DC reverse voltage VRWM Maximum working peak reverse voltage ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current (fig. 5) SYMBOL TEST CONDITIONS VALUES UNITS 200 per leg IF(AV) 50 % duty cycle at TC = 147 °C, rectangular waveform per device 400 A 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied 25 000 Maximum peak one cycle non-repetitive surge current per leg (fig. 7) IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 24 A, L = 1 mH 270 mJ Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 40 A 10 ms sine or 6 ms rect. pulse 3450 Revision: 11-May-17 Document Number: 94205 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-401CNQ...PbF Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS SYMBOL PARAMETER TEST CONDITIONS 200 A Maximum forward voltage drop per leg See fig. 1 VFM (1) 200 A IRM (1) 0.78 0.69 20 VR = Rated VR TJ = 125 °C mA 180 CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance per leg LS From top of terminal hole to mounting plane Maximum voltage rate of change dV/dt Maximum junction capacitance per leg V 0.56 TJ = TJ maximum TJ = 25 °C UNITS 0.67 TJ = 25 °C 400 A 400 A Maximum reverse leakage current per leg See fig. 2 VALUES 10 300 Rated VR pF 5.0 nH 10 000 V/μs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per leg SYMBOL MIN. TJ, TStg -55 - - 0.095 - 0.10 - - 68 - g - 2.4 - oz. RthJC Thermal resistance, junction to case per module RthCS Thermal resistance, case to heatsink Weight TYP. MAX. UNITS - 175 °C - 0.19 °C/W 35.4 (4) 53.1 (6) Mounting torque center hole 30 (3.4) 40 (4.6) Terminal torque 30 (3.4) - 44.2 (5) Vertical pull - - 80 2" lever pull - - 35 lbf ⋅ in (N ⋅ m) lbf ⋅ in 10 000 1000 TJ = 175 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) Mounting torque 100 TJ = 125 °C 10 TJ = 25 °C 1000 TJ = 175 °C TJ = 150 °C 100 TJ = 125 °C 10 TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 1 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 11-May-17 Document Number: 94205 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-401CNQ...PbF Series www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 0 10 20 30 40 50 60 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 0.1 PDM 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 t1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 175 180 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) DC 160 140 120 Square wave (D = 0.50) 80 % rated Vr applied 100 See note (1) 80 150 125 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 100 75 RMS limit DC 50 25 0 0 50 100 150 200 250 300 0 50 100 150 200 250 300 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 11-May-17 Document Number: 94205 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-401CNQ...PbF Series www.vishay.com IFSM - Non-Repetitive Surge Current (A) Vishay Semiconductors 100 000 At any rated load condition and with rated VRRM applied following surge 10 000 1000 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch IRFP460 D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR ORDERING INFORMATION TABLE Device code VS- 40 1 C N Q 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Average current rating (x 10) 3 - Product silicon identification 4 - C = circuit configuration 5 - N = not isolated 6 - Q = Schottky rectifier diode 7 - Voltage ratings 8 - Lead (Pb)-free 045 PbF 7 8 040 = 40 V 045 = 45 V LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95021 Revision: 11-May-17 Document Number: 94205 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-244 DIMENSIONS in millimeters (inches) 35 (1.37) REF. 13 (0.51) 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 40 (1.57) 80 (3.15) Ø 5.2 (Ø 0.20) 3 12.6 (0.5) Ø 7.2 (Ø 0.28) (2 places) 3 1 2 21 (0.82) 20 (0.78) ¼" - 20 UNC 9.6 (0.37) MIN. 93 (3.66) MAX. Revision: 24-Apr-15 Document Number: 95021 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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