End of Life January-2018 - Alternative Device: CNY17
4N32, 4N33
www.vishay.com
Vishay Semiconductors
Optocoupler, Photodarlington Output, High Gain,
With Base Connection
FEATURES
A
1
6 B
C
2
5 C
NC
3
4 E
• Very high current transfer ratio, 500 % min.
• High isolation resistance, 1011 Ω typical
• Standard plastic DIP package
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
i179005_1
V
D E
i179005
AGENCY APPROVALS
• UL1577, file no. E52744 system code H
DESCRIPTION
• DIN EN 60747-5-2 (VDE 0884) / DIN EN 60747-5-5
(pending), available with option 1
The 4N32 and 4N33 are optically coupled isolators with a
gallium arsenide infrared LED and a solicon photodarlington
sensor.
• BSI IEC 60950; IEC 60065
• FIMKO
Switching can be achieved while maintaining a high degree
of isolation between driving and load circuits.
These optocouplers can be used to replace reed and
mercury relays with advantages of long life, high speed
switching and elimination of magnetic fields.
ORDERING INFORMATION
4
N
3
#
PART NUMBER
-
X
0
#
PACKAGE OPTION
#
DIP
Option 6
7.62 mm
10.16 mm
Option 7
Option 9
T
TAPE AND
REEL
> 0.1 mm
> 0.7 mm
AGENCY CERTIFIED/PACKAGE
CTR (%)
UL, BSI, FIMKO
≥ 500
≥ 500
DIP-6
4N32
4N33
DIP-6, 400 mil, option 6
4N32-X006
-
SMD-6, option 7
4N32-X007T (1)
4N33-X007T (1)
SMD-6, option 9
4N32-X009T (1)
4N33-X009T (1)
≥ 500
≥ 500
DIP-6
4N32-X001
4N33-X001
SMD-6, option 7
4N32-X017T
4N33-X017T (1)
VDE, UL, BSI, FIMKO
Notes
• Additional options may be possible, please contact sales office
(1) Also available in tubes, do not put T on the end
Rev. 1.2, 15-Feb-11
Document Number: 81865
1
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life January-2018 - Alternative Device: CNY17
4N32, 4N33
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
3
V
Forward current
IF
60
mA
Power dissipation
Derate linearly
Pdiss
From 55 °C
100
mW
1.33
mW/°C
OUTPUT
Collector emitter breakdown voltage
BVCEO
30
V
Emitter base breakdown voltage
BVEBO
8
V
Collector base breakdown voltage
BVCBO
50
V
Emitter collector breakdown voltage
BVECO
5
V
IC
100
mA
Pdiss
150
mW
2
mW/°C
Collector (load) current
Power dissipation
Derate linearly
COUPLER
Total dissipation
Ptot
250
mW
3.3
mW/°C
Derate linearly
Isolation test voltage (between emitter
1s
VISO
5300
VRMS
7
mm min.
Leakage path
Air path
7
mm min.
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature
Tstg
-55 to +150
°C
Operating temperature
Tamb
-55 to +100
°C
Isolation resistance
Lead soldering time (1)
at 260 °C
10
s
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
-
1.25
1.5
V
Reverse current
VR = 3 V
IR
-
0.1
100
μA
Capacitance
VR = 0 V
CO
-
25
pF
OUTPUT
Collector emitter breakdown voltage (1)
IC = 100 μA, IF = 0
BVCEO
30
-
-
V
Collector base breakdown voltage (1)
IC = 100 μA, IF = 0
BVCBO
50
-
-
V
Emitter base breakdown voltage (1)
IC = 100 μA, IF = 0
BVEBO
8
-
-
V
Emitter collector breakdown voltage (1)
IC = 100 μA, IF = 0
BVECO
5
10
-
V
VCE = 10 V, IF = 0
ICEO
-
1
100
nA
IC = 0.5 mA, VCE = 5 V
hFE
13
-
-
VCEsat
-
1
-
Collector emitter leakage current
COUPLER
Collector emitter saturation voltage
V
Coupling capacitance
1.5
pF
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements
(1) Indicates JEDEC® registered values
Rev. 1.2, 15-Feb-11
Document Number: 81865
2
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life January-2018 - Alternative Device: CNY17
4N32, 4N33
www.vishay.com
Vishay Semiconductors
CURRENT TRANSFER RATIO
PARAMETER
Current transfer ratio
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
VCE = 10 V, IF = 10 mA
CTR
500
-
-
%
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Turn-on time
VCC = 10 V, IC = 50 mA
ton
-
-
5
μs
Turn-off time
IF = 200 mA, RL = 180 Ω
toff
-
-
100
μs
SYMBOL
MIN.
TYP.
MAX.
UNIT
-
55 / 100 / 21
399
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
Climatic classification
(according to IEC 68 part 1)
Comparative tracking index
175
-
VIOTM
CTI
8000
-
-
V
VIORM
890
-
-
V
PSO
-
-
700
mW
ISI
-
-
400
mA
TSI
-
-
175
°C
Creepage distance
Standard DIP-6
7
-
-
mm
Clearance distance
Standard DIP-6
7
-
-
mm
Creepage distance
400 mil DIP-6
8
-
-
mm
Clearance distance
400 mil DIP-6
8
-
-
mm
Insulation thickness,
reinforced rated
per IEC 60950 2.10.5.1
0.4
-
-
mm
Note
• As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.0
10
Normalized to:
VCE = 5 V
IF = 10 mA
0.8
TA = 25 °C
VCE = 5 V
0.6
0.4
0.2
NICE - Normalized ICE
NCTRCE - Normalized CTRCE
1.2
Normalized to:
VCE = 5 V
1 IF = 10 mA
VCE = 5 V
TA = 25 °C
VCE = 1 V
0.1
0.01
VCE = 1 V
0.0
0.1
i4n32-33_02
1
10
100
1000
IF - LED Current (mA)
Fig. 1 - Normalized Non-Saturated and Saturated CTRCE vs.
LED Current
Rev. 1.2, 15-Feb-11
0.001
0.1
i4n32-33_03
1
10
100
IF - LED Current (mA)
Fig. 2 - Normalized Non-Saturated and Saturated Collector Emitter
Current vs. LED Current
Document Number: 81865
3
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life January-2018 - Alternative Device: CNY17
4N32, 4N33
www.vishay.com
Vishay Semiconductors
20
Normalized to:
VCB = 3.5 V
1
IF = 10 mA
tpHL - High/Low Propagation
Delay (µs)
NICB - Normalized ICB
10
TA = 25 °C
0.1
0.01
1 kΩ
10
1
10
0
100
0
IF = LED Current (mA)
i4n32-33_04
100 Ω
5
0.001
0.1
TA = 25 °C
VCC = 5 V
VTH = 1.5 V
15
10
5
15
20
IF - LED Current (mA)
i4n32-33_07
Fig. 6 - High to Low Propagation Delay vs.
Collector Load Resistance and LED Current
Fig. 3 - Normalized Collector Base Photocurrent vs.
LED Current
10 000
hFE - Forward Transfer Gain
TA = 25 °C
VCE = 5 V
IF
8000
VCC
RL
6000
VO
4000
tD
tR
VO
tPLH
IF
VCE = 1 V
2000
VTH = 1.5 V
tPHL
0
0.01
0.1
1
10
100
tS
tF
i4n32-33_08
Ib - Base Current (µA)
i4n32-33_05
Fig. 4 - Non-Saturated and Saturated hFE vs.
Base Current
Fig. 7 - Switching Waveform and Switching Schematic
tpLH - Low/High Propagation
Delay (µs)
80
TA = 25 °C, VCC = 5 V
VTH = 1.5 V
1 kΩ
60
220 Ω
40
470 Ω
20
100 Ω
0
0
i4n32-33_06
5
10
15
20
IF - LED Current (mA)
Fig. 5 - Low to High Propagation Delay vs.
Collector Load Resistance and LED Current
Rev. 1.2, 15-Feb-11
Document Number: 81865
4
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life January-2018 - Alternative Device: CNY17
4N32, 4N33
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
DIP-6 Package Dimensions
Pin one ID
3
2
1
4
5
6
6.4 ± 0.1
ISO method A
8.6 ± 0.1
7.62 typ.
1.2 ± 0.1
1 min.
3.555 ± 0.255
18°
4° typ.
2.95 ± 0.5
0.8 min.
0.85 ± 0.05
0.25 typ.
3° to 9°
0.5 ± 0.05
7.62 to 8.81
i178004
2.54 typ.
Option 6
Option 7
Option 9
7.62 typ.
7.62 typ.
10.3 max.
7.62 typ.
0.7 min.
3.5 ± 0.3
4.3 ± 0.3
0.1 ± 0.1
3.6 ± 0.3
0.1 min.
8 min.
2.55 ± 0.25
0.6 min.
10.3 max.
0.6 min.
8 min.
10.16 typ.
0.76
R 0.25
2.54
0.76
2.54
R 0.25
1.78
8 min.
11.05
20802-24
1.52
1.78
8 min.
11.05
1.52
PACKAGE MARKING
4N32
-X017
V YWW H 68
21764-18
Notes
• Example marking for 4N32-X017T
• Only options 1, and 7 reflected in the package marking
• The VDE logo is only marked on option 1 parts
• Tape and reel suffix (T) is not part of the package marking
Rev. 1.2, 15-Feb-11
Document Number: 81865
5
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16
1
Document Number: 91000