4N38

4N35-X, 4N36-X, 4N37-X, 4N38 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES • Isolation test voltage 5000 VRMS • Interfaces with common logic families A 1 6 B C 2 5 C NC 3 4 E • Input-output coupling capacitance < 0.5 pF • Industry standard dual-in-line 6 pin package • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • AC mains detection • Reed relay driving i179004-14 DESCRIPTION • Switch mode power supply feedback This datasheet presents five families of Vishay industry standard single channel phototransistor couplers. These families include the 4N35, 4N36, 4N37, 4N38 couplers. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5000 VRMS isolation test voltage. This isolation performance is accomplished through Vishay double molding isolation manufacturing process. Comliance to DIN EN 60747-5-5 partial discharge isolation specification is available for these families by ordering option 1. These isolation processes and the Vishay ISO9001 quality program results in the highest isolation performance available for a commecial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. • Telephone ring detection • Logic ground isolation • Logic coupling with high frequency noise rejection AGENCY APPROVALS • UL file no. E52744 (pending) • cUL tested to CSA 22.2 bulletin 5A • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 (pending), available with option 1 • BSI: EN 60065, EN 60950-1 • FIMKO • CQC Note • For additional design information see application note 45 normalized curves ORDERING INFORMATION 4 N 3 PART NUMBER x - X 0 # # PACKAGE OPTION AGENCY CERTIFIED/PACKAGE UL, cUL, BSI, FIMKO DIP-6 4N35-X000 DIP-6, 400 mil, option 6 4N35-X006 SMD-6, option 7 4N35-X007T (1) SMD-6, option 9 4N35-X009T (1) VDE, UL, cUL, BSI, FIMKO DIP-6 4N35-X001 DIP-6, 400 mil, option 6 4N35-X016 SMD-6, option 7 4N35-X017T (1) SMD-6, option 9 4N35-X019T Notes • Additional options may be possible, please contact sales office. (1) Also available in tubes; do not put T on end. 10 mA ≥ 100 4N36-X000 4N36-X007 4N36-X009T (1) ≥ 100 - DIP-6 Option 6 7.62 mm 10.16 mm Option 7 Option 9 > 8 mm 8 mm typ. T TAPE AND REEL CTR (%) 4N37-X000 4N37-X006 4N37-X007 4N37-X009 4N37-X001 - 20 mA ≥ 20 4N38 4N38-X007T (1) 4N38-X009T ≥ 20 - Document Number: 83717 1 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.8, 16-Jan-12 4N35-X, 4N36-X, 4N37-X, 4N38 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Surge current t ≤ 10 μs IFSM 2.5 A Pdiss 70 mW Collector emitter breakdown voltage VCEO 70 V Emitter base breakdown voltage VEBO 7 V IC 50 mA Power dissipation OUTPUT Collector current Collector peak current tp/T = 0.5, tp ≤ 10 ms Output power dissipation ICM 100 mA Pdiss 150 mW VISO 5000 VRMS COUPLER Isolation test voltage t=1s Creepage distance ≥7 mm Clearance distance ≥7 mm ≥ 0.4 mm Isolation thickness between emitter and detector Comparative tracking index Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Tstg - 55 to + 150 °C Tamb - 55 to + 100 °C Tsld 260 °C Storage temperature Operating temperature Soldering temperature (1) ≥ 175 DIN IEC 112/VDE 0303, part 1 2 mm from case, ≤ 10 s Ω Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT 1.2 1.5 V 0.9 1.3 1.7 V 10 μA INPUT Forward voltage (1) Reverse current (1) Capacitance IF = 10 mA VF IF = 10 mA, Tamb = - 55 °C VF VR = 6 V IR 0.1 VR = 0 V, f = 1 MHz CO 25 pF OUTPUT Collector emitter breakdown voltage (1) Emitter collector breakdown voltage (1) Collector base breakdown voltage (1) IC = 1 mA 4N35 BVCEO 30 V 4N36 BVCEO 30 V 4N37 BVCEO 30 V 4N38 BVCEO 80 V BVECO 7 V 4N35 BVCBO 70 V 4N36 BVCBO 70 V 4N37 BVCBO 70 V 4N38 BVCBO 80 V IE = 100 μA IC = 100 μA, IB = 1 μA Document Number: 83717 2 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.8, 16-Jan-12 4N35-X, 4N36-X, 4N37-X, 4N38 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VCE = 10 V, IF = 0 4N35 4N36 VCE = 10 V, IF = 0 4N37 ICEO VCE = 60 V, IF = 0 4N38 MIN. TYP. MAX. UNIT ICEO 5 50 nA ICEO 5 50 nA 5 50 nA ICEO 50 nA OUTPUT Collector emitter leakage current (1) 4N35 ICEO 500 μA VCE = 30 V, IF = 0, Tamb = 100 °C 4N36 ICEO 500 μA 4N37 ICEO 500 μA VCE = 60 V, IF = 0, Tamb = 100 °C 4N38 ICEO 6 μA VCE = 0 CCE 6 pF Resistance, input output (1) VIO = 500 V RIO Capacitance, input output f = 1 MHz CIO 0.5 pF Collector emitter capacitance coupler Ω 1011 Notes • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (1) Indicates JEDEC registered value. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION VCE = 10 V, IF = 10 mA VCE = 10 V, IF = 20 mA IC/IF (1) VCE = 10 V, IF = 10 mA, TA = - 55 °C to + 100 °C PART SYMBOL MIN. 4N35 CTRDC 100 TYP. MAX. UNIT % 4N36 CTRDC 100 % 4N37 CTRDC 100 % 4N38 CTRDC 20 4N35 CTRDC 40 50 % 4N36 CTRDC 40 50 % 4N37 CTRDC 40 50 % 4N38 CTRDC 30 % % Note (1) Indicates JEDEC registered values. SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Turn-on time (1) VCC = 5 V, IC = 2 mA, RL = 100 Ω ton MIN. TYP. 10 MAX. UNIT μs Turn-off time (1) VCC = 5 V, IC = 2 mA, RL = 100 Ω toff 10 μs Note (1) Indicates JEDEC registered values. IF +5V IF IF 0 0 tp IC t 100 % 90 % R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L = 1 MΩ C L = 20 pF RL 95 10804-3 Fig. 1 - Test Circuit, Non-Saturated Operation 10 % 0 tr td t on tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time ts tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 2 - Switching Times Document Number: 83717 3 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.8, 16-Jan-12 4N35-X, 4N36-X, 4N37-X, 4N38 www.vishay.com Vishay Semiconductors 1.8 1.7 Tamb = 0 °C 1.6 Tamb = - 25 °C 1.5 1.4 Tamb = - 40 °C 1.3 T = - 55 °C amb 1.2 1.1 Tamb = 25 °C 1.0 Tamb = 50 °C 0.9 Tamb = 75 °C 0.8 0.7 Tamb = 100 °C 0.6 0.1 1 10 100 10 000 IF = 0 mA ICE0 - Leakage Current (nA) VF - Forward Voltage (V) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 VCE = 40 V 100 1 VCE = 12 V 0.1 0.01 0.001 - 60 - 40 - 20 0 20 40 60 80 100 IF - Forward Current (mA) Tamb - Ambient Temperature (°C) Fig. 3 - Forward Voltage vs. Forward Current Fig. 6 - Leakage Current vs. Ambient Temperature 60 1.2 CTRNorm - Normalized CTR (NS) IC - Collector Current (mA) VCE = 24 V 10 IF = 30 mA 50 40 IF = 20 mA 30 IF = 15 mA 20 IF = 10 mA 10 IF = 5 mA 0 0 1 2 3 4 5 7 6 0.8 IF = 5 mA 0.6 0.4 IF = 1 mA 0.2 0 - 60 - 40 - 20 8 VCE = 5 V IF = 10 mA 1.0 0 20 40 60 80 100 VCE - Collector Emitter Voltage (NS) (V) Tamb - Ambient Temperature (°C) Fig. 4 - Collector Current vs. Collector Emitter Voltage (NS) Fig. 7 - Normalized CTR (NS) vs. Ambient Temperature 25 IC - Collector Current (mA) 20 15 IF = 10 mA 10 IF = 5 mA 5 IF = 1 mA IF = 2 mA 0 0.1 0 0.2 0.3 0.4 CTRNorm - Normalized CTR (sat) 1.2 IF = 25 mA VCE = 0.4 V IF = 10 mA 1.0 0.8 IF = 5 mA 0.6 IF = 1 mA 0.4 0.2 0 - 60 - 40 - 20 0 20 40 60 80 100 VCE - Collector Emitter Voltage (sat) (V) Tamb - Ambient Temperature (°C) Fig. 5 - Collector Current vs. Collector Emitter Voltage (sat) Fig. 8 - Normalized CTR (sat) vs. Ambient Temperature Document Number: 83717 4 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.8, 16-Jan-12 4N35-X, 4N36-X, 4N37-X, 4N38 www.vishay.com Vishay Semiconductors 1000 VCE = 5 V VCC = 5 V fCTR - CTR Frequency (kHz) CTRNorm - Normalized CTR (NS) 1.2 Tamb = 25 °C 1.0 Tamb = 0 °C 0.8 Tamb = - 40 °C Tamb = - 55 °C 0.6 Tamb = 50 °C 0.4 Tamb = 75 °C 0.2 100 10 Tamb = 100 °C 0 0.1 1 1 0.1 100 10 1 10 100 IF - Forward Current (mA) IC - Collector Current (mA) Fig. 9 - Normalized CTR (NS) vs. Forward Current Fig. 12 - CTR Frequency vs. Collector Current 1000 VCE = 5 V, IF = 10 mA VCE = 0.4 V ton, toff - Switching Time (μs) CTRNorm - Normalized CTR (sat) 1.2 Tamb = 25 °C 1.0 Tamb = 0 °C Tamb = - 40 °C 0.8 Tamb = - 55 °C 0.6 0.4 Tamb = 50 °C Tamb = 75 °C 0.2 toff 100 10 ton 1 Tamb = 100 °C 0 0.1 1 100 10 0.1 0.1 1 10 100 IF - Forward Current (mA) RL - Load Resistance (kΩ) Fig. 10 - Normalized CTR (sat) vs. Forward Current Fig. 13 - Switching Time vs. Load Resistance 0 VCE = 5 V - 20 Phase (deg) - 40 - 60 - 80 - 100 - 120 - 140 - 160 1 10 100 1000 f - Frequency (kHz) Fig. 11 - CTR Frequency vs. Phase Angle Document Number: 83717 5 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.8, 16-Jan-12 4N35-X, 4N36-X, 4N37-X, 4N38 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 6.5 ± 0.5 7.3 ± 0.5 7.62 ± 0.3 1.1 ± 0.1 3.5 ± 0.3 0.5 typ. 3.3 ± 0.5 2.8 ± 0.5 0.26 0.5 ± 0.1 2.54 ± 0.25 7.62 to 9.98 22530 Option 6 Option 7 7.62 typ. 7.62 typ. 3.5 ± 0.3 7.62 typ. 3.5 ± 0.3 0.35 ± 0.25 0.1 min. Option 9 0.6 min. 8 min. 2.7 min. 10.16 typ. 0.1 ± 0.1 0.6 min. 3.5 ± 0.3 8.16 ± 0.8 10.16 ± 0.3 10.3 max. 0.76 R 0.25 2.54 0.76 2.54 R 0.25 1.78 20802-34 8 min. 11.05 1.52 1.78 8 min. 11.05 1.52 PACKAGE MARKING 4N36 V YWW 25 Notes • VDE logo is only marked on option 1 parts. Option information is not marked on the part. • Tape and reel suffix (T) is not part of the package marking. Document Number: 83717 6 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.8, 16-Jan-12 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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