5KASMC10A thru 5KASMC43A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction
passivation
optimized
design
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high reliability
and automotive requirement
• Available in unidirectional polarity only
• 5000 W peak pulse power capability with a
10/1000 μs waveform
SMC (DO-214AB)
Cathode
Anode
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VWM
10 V to 43 V
VBR
11.1 V to 52.8
PPPM (10 x 1000 μs)
5000 W
PD
6.5 W
TJ max.
185 °C
Polarity
Unidirectional
Package
SMC (DO-214AB)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case: SMC (DO-214AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,
.....)
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HM3 suffix meets JESD 201 class 2 whisker test
per
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
PPPM (1)
5000
W
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 3)
Peak power pulse current with a 10/1000 μs waveform (fig. 1)
IPPM
(1)
See next table
A
Power dissipation on infinite heatsink, TM = 50 °C
PD
6.5
W
Operating junction and storage temperature range
TJ, TSTG
-65 to +185
°C
Note
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
Revision: 19-Apr-2021
Document Number: 89432
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5KASMC10A thru 5KASMC43A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
MIN.
NOM.
STAND-OFF
TEST
CURRENT VOLTAGE
VWM
IT
(mA)
(V)
MAX.
MAXIMUM
MAXIMUM
REVERSE
REVERSE
LEAKAGE
LEAKAGE
AT VWM
AT VWM
TJ = 150 °C
IR (μA)
ID (μA)
MAXIMUM
PEAK
PULSE
SURGE
CURRENT
IPPM (2)
(A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
TYPICAL
TEMP.
COEFFICIENT
OF VBR (3)
αT
(%/°C)
5KASMC10A
5AX
11.1
11.7
12.3
1.0
10
20.0
500
294.1
17.0
0.069
5KASMC12A
5BE
13.3
14.0
14.7
1.0
12
10.0
300
251.3
19.9
0.074
5KASMC13A
5BG
14.4
15.2
15.9
1.0
13
10.0
300
232.6
21.5
0.076
5KASMC16A
5BP
17.8
18.8
19.7
1.0
16
2.0
50
192.3
26.0
0.081
5KASMC17A
5BR
18.9
19.9
20.9
1.0
17
2.0
50
181.2
27.6
0.082
5KASMC18A
5BT
20.0
21.1
22.1
1.0
18
2.0
50
171.2
29.2
0.083
5KASMC20A
5BV
22.2
23.4
24.5
1.0
20
2.0
50
154.3
32.4
0.085
5KASMC22A
5BX
24.4
25.7
26.9
1.0
22
2.0
50
140.8
35.5
0.086
5KASMC24A
5BZ
26.7
28.1
29.5
1.0
24
2.0
50
128.5
38.9
0.087
5KASMC26A
5CE
28.9
30.4
31.9
1.0
26
2.0
50
118.8
42.1
0.088
5KASMC28A
5CG
31.1
32.8
34.4
1.0
28
2.0
50
110.1
45.4
0.089
5KASMC30A
5CK
33.3
35.1
36.8
1.0
30
2.0
50
103.3
48.4
0.090
5KASMC33A
5CM
36.7
38.7
40.6
1.0
33
2.0
50
93.8
53.3
0.091
5KASMC36A
5CP
40.0
42.1
44.2
1.0
36
2.0
50
86.1
58.1
0.091
5KASMC40A
5CR
44.4
46.8
49.1
1.0
40
2.0
50
77.5
64.5
0.092
5KASMC43A
5CT
47.8
50.3
52.8
1.0
43
2.0
50
72.0
69.4
0.093
Notes
(1) Pulse test: t ≤ 50 ms
p
(2) Surge current waveform per fig. 3 and derated per fig. 2
(3) To calculate V
BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25))
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to ambient
RθJA (1)
100
°C/W
Typical thermal resistance, junction to mount
RθJM (2)
20.8
°C/W
Notes
(1) Mounted on minimum recommended pad layout
(2) Mounted on infinite heat sink
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
5KASMC10AHM3_A/H (1)
0.257
H
850
7" diameter plastic tape and reel
5KASMC10AHM3_A/I (1)
0.257
I
3500
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
Revision: 19-Apr-2021
Document Number: 89432
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5KASMC10A thru 5KASMC43A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1 000 000
CJ - Junction Capacitance (pF)
PPPM - Peak Pulse Power (kW)
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100 000
10
Measured at
Zero Bias
10 000
1000
1
100
1
10
100
10
1000
20
30
40
Reverse Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
100
6.5
6.0
75
50
25
5.5
5.0
TM, Mounted on
Infinite Heatsink
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
TA, Mounted on Minimum
Recommended Pad Layout
0.5
0
0
50
0
100
150
0
200
25
50
75
100
125
150
TJ - Initial Temperature (°C)
Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Power Derating Curve
150
Peak Value
IPPM
100
Half Value - IPP
IPPM
2
50
td = 1000 µs
td = 20 µs
td
0
0
1.0
2.0
3.0
175
200
100
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
tr = 8 µs
Transient Thermal Impedance (°C/W)
IPPM - Peak Pulse Current (% IRSM)
50
td - Pulse Width (µs)
PD - Power Dissipation (W)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage (%)
Measured at
Stand-Off Voltage VWM
4.0
10
1
0.01
0.1
1
10
100
1000
t - Time (ms)
tp - Pulse Duration (s)
Fig. 3 - Pulse Waveform
Fig. 6 - Typical Transient Thermal Impedance
Revision: 19-Apr-2021
Document Number: 89432
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5KASMC10A thru 5KASMC43A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMC (DO-214AB)
Mounting Pad Layout
Cathode Band
0.185 (4.69)
MAX.
0.126 (3.20)
0.246 (6.22)
0.220 (5.59)
0.114 (2.90)
0.126 (3.20)
MIN.
0.280 (7.11)
0.060 (1.52)
MIN.
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.320 REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 19-Apr-2021
Document Number: 89432
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000